JP2014236080A5 - - Google Patents

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Publication number
JP2014236080A5
JP2014236080A5 JP2013116030A JP2013116030A JP2014236080A5 JP 2014236080 A5 JP2014236080 A5 JP 2014236080A5 JP 2013116030 A JP2013116030 A JP 2013116030A JP 2013116030 A JP2013116030 A JP 2013116030A JP 2014236080 A5 JP2014236080 A5 JP 2014236080A5
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JP
Japan
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JP2013116030A
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English (en)
Japanese (ja)
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JP6029538B2 (ja
JP2014236080A (ja
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Priority claimed from JP2013116030A external-priority patent/JP6029538B2/ja
Priority to JP2013116030A priority Critical patent/JP6029538B2/ja
Priority to CN201480031054.2A priority patent/CN105247665B/zh
Priority to US14/891,942 priority patent/US9401420B2/en
Priority to PCT/JP2014/002407 priority patent/WO2014192229A1/ja
Priority to TW103116866A priority patent/TWI574310B/zh
Publication of JP2014236080A publication Critical patent/JP2014236080A/ja
Publication of JP2014236080A5 publication Critical patent/JP2014236080A5/ja
Publication of JP6029538B2 publication Critical patent/JP6029538B2/ja
Application granted granted Critical
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JP2013116030A 2013-05-31 2013-05-31 半導体装置 Active JP6029538B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013116030A JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置
CN201480031054.2A CN105247665B (zh) 2013-05-31 2014-05-02 半导体装置
US14/891,942 US9401420B2 (en) 2013-05-31 2014-05-02 Semiconductor device
PCT/JP2014/002407 WO2014192229A1 (ja) 2013-05-31 2014-05-02 半導体装置
TW103116866A TWI574310B (zh) 2013-05-31 2014-05-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013116030A JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2014236080A JP2014236080A (ja) 2014-12-15
JP2014236080A5 true JP2014236080A5 (cg-RX-API-DMAC7.html) 2015-12-24
JP6029538B2 JP6029538B2 (ja) 2016-11-24

Family

ID=51988284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013116030A Active JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置

Country Status (5)

Country Link
US (1) US9401420B2 (cg-RX-API-DMAC7.html)
JP (1) JP6029538B2 (cg-RX-API-DMAC7.html)
CN (1) CN105247665B (cg-RX-API-DMAC7.html)
TW (1) TWI574310B (cg-RX-API-DMAC7.html)
WO (1) WO2014192229A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6615075B2 (ja) 2016-09-15 2019-12-04 サンケン電気株式会社 半導体デバイス用基板、半導体デバイス、及び、半導体デバイス用基板の製造方法
CN112820773B (zh) * 2019-11-18 2024-05-07 联华电子股份有限公司 一种高电子迁移率晶体管
JP7491942B2 (ja) * 2019-11-21 2024-05-28 日本碍子株式会社 １３族元素窒化物結晶層、自立基板および機能素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998047170A1 (fr) * 1997-04-11 1998-10-22 Nichia Chemical Industries, Ltd. Procede assurant la croissance de semi-conducteurs de nitrure, substrat semi-conducteur de nitrure et dispositif semi-conducteur au nitrure.
EP0852416B1 (en) * 1995-09-18 2002-07-10 Hitachi, Ltd. Semiconductor material, method of producing the semiconductor material, and semiconductor device
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
JP3986887B2 (ja) * 2002-05-17 2007-10-03 松下電器産業株式会社 半導体装置
US7052942B1 (en) * 2003-09-19 2006-05-30 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
US7326971B2 (en) * 2005-06-08 2008-02-05 Cree, Inc. Gallium nitride based high-electron mobility devices
JP5309451B2 (ja) * 2007-02-19 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
US8067787B2 (en) * 2008-02-07 2011-11-29 The Furukawa Electric Co., Ltd Semiconductor electronic device
JP2010219176A (ja) * 2009-03-16 2010-09-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5477685B2 (ja) * 2009-03-19 2014-04-23 サンケン電気株式会社 半導体ウェーハ及び半導体素子及びその製造方法
JP5572976B2 (ja) * 2009-03-26 2014-08-20 サンケン電気株式会社 半導体装置
JP5564842B2 (ja) * 2009-07-10 2014-08-06 サンケン電気株式会社 半導体装置

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