JP2014229709A - 薄膜トランジスタの製造方法及び薄膜トランジスタ - Google Patents
薄膜トランジスタの製造方法及び薄膜トランジスタ Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000010408 film Substances 0.000 claims abstract description 134
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000077 silane Inorganic materials 0.000 claims abstract description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000007789 gas Substances 0.000 claims description 42
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 238000004381 surface treatment Methods 0.000 claims description 9
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 230000009467 reduction Effects 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 53
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000003371 toe Anatomy 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
【解決手段】酸化物半導体をチャネルとして用いた薄膜トランジスタの製造方法であって、基板10上の一部に酸化物半導体層20を形成する工程と、シラン系の原料ガス用いたCVD法で、酸化物半導体層20上及び基板10上にシリコン酸化膜からなる第1のゲート絶縁膜31を形成する工程と、TEOSを原料ガスに用いたCVD法で、第1のゲート絶縁膜31上にシリコン酸化膜からなる第2のゲート絶縁膜32を形成する工程と、第2のゲート絶縁膜32上にゲート電極40を形成する工程と、を含む。
【選択図】 図4
Description
図1乃至図3は、第1の実施形態に係わる薄膜トランジスタ、特にIGZOをチャネルに用いたコプラナ型TFTの概略構造を説明するためのもので、図1は平面図、図2は図1の矢視I−I’断面図、図3は図1の矢視II−II’断面図である。このTFTは、例えば液晶表示装置の画素スイッチングに用いるものである。
図6は、第2の実施形態に係わる薄膜トランジスタの製造工程を示す断面図である。なお、図4と同一部分には同一符号を付して、その詳しい説明は省略する。
図7は、第3の実施形態に係わる薄膜トランジスタの製造工程を示す断面図である。なお、図4と同一部分には同一符号を付して、その詳しい説明は省略する。
なお、本発明は上述した各実施形態に限定されるものではない。
20…酸化物半導体層
30…ゲート絶縁膜
31…第1のシリコン酸化膜(第1のゲート絶縁膜)
32…第2のシリコン酸化膜(第2のゲート絶縁膜)
40…ゲート電極
50…層間絶縁膜
60…ソース/ドレイン電極
70…配線層
Claims (7)
- 基板上の一部に酸化物半導体層を形成する工程と、
シラン系の原料ガスを用いたCVD法で、前記酸化物半導体層上及び前記基板上にシリコン酸化膜からなる第1のゲート絶縁膜を形成する工程と、
TEOSを原料ガスに用いたCVD法で、前記第1のゲート絶縁膜上にシリコン酸化膜からなる第2のゲート絶縁膜を形成する工程と、
前記第2のゲート絶縁膜上にゲート電極を形成する工程と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記シラン系の原料ガスとして、SiH4 とN2Oを主成分とするガスを用いたことを特徴とする、請求項2記載の薄膜トランジスタの製造方法。
- 基板上の一部に酸化物半導体層を形成する工程と、
前記酸化物半導体層に対して酸素プラズマによる表面処理を行う工程と、
前記表面処理の後、TEOSを原料ガスに用いたCVD法により、前記酸化物半導体層上及び前記基板上にシリコン酸化膜からなるゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 基板上の一部に酸化物半導体層を形成する工程と、
前記酸化物半導体層に対して酸素プラズマによる表面処理を行いながら、TEOSを原料ガスに用いたCVD法により、前記酸化物半導体層上及び前記基板上にシリコン酸化膜からなるゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記酸化物半導体層として、インジウム−ガリウムー亜鉛合金の酸化物(IGZO)を用いたことを特徴とする請求項1乃至4の何れかに記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体層を形成する工程として、前記基板上の全面に前記酸化物半導体層を形成した後に、ウェットエッチングにより前記酸化物半導体層を島状に加工することを特徴とする請求項1乃至5の何れかに記載の薄膜トランジスタの製造方法。
- 基板上の一部に形成された酸化物半導体層と、
前記酸化物半導体層上及び前記基板上に、シラン系の原料ガスを用いたCVD法で形成されたシリコン酸化膜からなる第1のゲート絶縁膜と、
前記第1のゲート絶縁膜上に、TEOSを原料ガスに用いたCVD法で形成されたシリコン酸化膜からなる第2のゲート絶縁膜と、
前記第2のゲート絶縁膜上に形成されたゲート電極と、
を具備したことを特徴とする薄膜トランジスタ。
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JP2013107376A JP6106024B2 (ja) | 2013-05-21 | 2013-05-21 | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
US14/256,267 US20140346497A1 (en) | 2013-05-21 | 2014-04-18 | Thin-film transitor and method for manufacturing the same |
US14/729,117 US9337322B2 (en) | 2013-05-21 | 2015-06-03 | Thin-film transistor and method for manufacturing the same |
US15/051,786 US9647134B2 (en) | 2013-05-21 | 2016-02-24 | Thin-film transistor and method for manufacturing the same |
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KR102110226B1 (ko) * | 2013-09-11 | 2020-05-14 | 삼성디스플레이 주식회사 | 표시패널 및 그 제조방법 |
CN106469750A (zh) * | 2015-08-19 | 2017-03-01 | 昆山工研院新型平板显示技术中心有限公司 | 薄膜晶体管及其制造方法 |
US9899387B2 (en) * | 2015-11-16 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-gate device and method of fabrication thereof |
TWI588971B (zh) * | 2016-04-15 | 2017-06-21 | 友達光電股份有限公司 | 主動元件 |
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US20160172503A1 (en) | 2016-06-16 |
US20150263142A1 (en) | 2015-09-17 |
US9337322B2 (en) | 2016-05-10 |
US20140346497A1 (en) | 2014-11-27 |
US9647134B2 (en) | 2017-05-09 |
JP6106024B2 (ja) | 2017-03-29 |
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