JP2014189442A5 - - Google Patents
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- Publication number
- JP2014189442A5 JP2014189442A5 JP2013066491A JP2013066491A JP2014189442A5 JP 2014189442 A5 JP2014189442 A5 JP 2014189442A5 JP 2013066491 A JP2013066491 A JP 2013066491A JP 2013066491 A JP2013066491 A JP 2013066491A JP 2014189442 A5 JP2014189442 A5 JP 2014189442A5
- Authority
- JP
- Japan
- Prior art keywords
- seed substrate
- gas
- etching
- temperature
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 5
- 239000012071 phase Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013066491A JP2014189442A (ja) | 2013-03-27 | 2013-03-27 | 炭化珪素半導体基板の製造方法 |
| CN201480009899.1A CN105705684A (zh) | 2013-03-27 | 2014-03-26 | 制造碳化硅半导体衬底的方法 |
| US14/647,774 US9269572B2 (en) | 2013-03-27 | 2014-03-26 | Method for manufacturing silicon carbide semiconductor substrate |
| PCT/JP2014/058524 WO2014157332A1 (ja) | 2013-03-27 | 2014-03-26 | 炭化珪素半導体基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013066491A JP2014189442A (ja) | 2013-03-27 | 2013-03-27 | 炭化珪素半導体基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014189442A JP2014189442A (ja) | 2014-10-06 |
| JP2014189442A5 true JP2014189442A5 (cg-RX-API-DMAC7.html) | 2016-02-25 |
Family
ID=51624295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013066491A Pending JP2014189442A (ja) | 2013-03-27 | 2013-03-27 | 炭化珪素半導体基板の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9269572B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2014189442A (cg-RX-API-DMAC7.html) |
| CN (1) | CN105705684A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2014157332A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102265623B1 (ko) * | 2018-12-26 | 2021-06-22 | 한국세라믹기술원 | 증착공정에서 발생되는 탄화규소 부산물의 재생 방법 |
| WO2021025077A1 (ja) * | 2019-08-06 | 2021-02-11 | 株式会社デンソー | ＳｉＣ基板の製造方法 |
| WO2022205480A1 (zh) * | 2021-04-02 | 2022-10-06 | 眉山博雅新材料有限公司 | 一种组合晶体制备方法和系统 |
| JP2024085223A (ja) * | 2022-12-14 | 2024-06-26 | 株式会社デンソー | 半導体装置の製造方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4238357B2 (ja) | 2003-08-19 | 2009-03-18 | 独立行政法人産業技術総合研究所 | 炭化珪素エピタキシャルウエハ、同ウエハの製造方法及び同ウエハ上に作製された半導体装置 |
| US20070290211A1 (en) * | 2004-03-26 | 2007-12-20 | The Kansai Electric Power Co., Inc. | Bipolar Semiconductor Device and Process for Producing the Same |
| JP2007182330A (ja) * | 2004-08-24 | 2007-07-19 | Bridgestone Corp | 炭化ケイ素単結晶ウェハ及びその製造方法 |
| US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7235492B2 (en) * | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
| JP2006321696A (ja) * | 2005-05-20 | 2006-11-30 | Hitachi Cable Ltd | 炭化珪素単結晶の製造方法 |
| US7501349B2 (en) * | 2006-03-31 | 2009-03-10 | Tokyo Electron Limited | Sequential oxide removal using fluorine and hydrogen |
| JP5131675B2 (ja) * | 2006-08-25 | 2013-01-30 | 国立大学法人京都大学 | 炭化ケイ素基板の製造方法 |
| JP5125095B2 (ja) | 2006-12-22 | 2013-01-23 | パナソニック株式会社 | ＳｉＣエピタキシャル膜付き基板の製造方法及びＳｉＣエピタキシャル膜付き基板の製造装置 |
| JP2008222509A (ja) * | 2007-03-14 | 2008-09-25 | Matsushita Electric Ind Co Ltd | ＳｉＣエピタキシャル膜付き単結晶基板の製造方法 |
| JP4916479B2 (ja) * | 2008-05-13 | 2012-04-11 | トヨタ自動車株式会社 | 炭化珪素エピタキシャル用基板の製造方法 |
| JP2010095431A (ja) * | 2008-10-20 | 2010-04-30 | Toyota Motor Corp | ＳｉＣ薄膜形成装置 |
| CN100578737C (zh) * | 2008-11-07 | 2010-01-06 | 中国电子科技集团公司第五十五研究所 | 一种制作基本上没有台阶形貌的碳化硅外延层的方法 |
| US20110278596A1 (en) | 2009-01-30 | 2011-11-17 | Takashi Aigo | Epitaxial silicon carbide monocrystalline substrate and method of production of same |
| JP4959763B2 (ja) | 2009-08-28 | 2012-06-27 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| JP4887418B2 (ja) | 2009-12-14 | 2012-02-29 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法 |
| SE1051137A1 (sv) * | 2010-10-29 | 2012-04-30 | Fairchild Semiconductor | Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav |
| US8927396B2 (en) | 2010-11-17 | 2015-01-06 | Nippon Steel & Sumitomo Metal Corporation | Production process of epitaxial silicon carbide single crystal substrate |
| CN102534808B (zh) * | 2010-12-14 | 2014-11-05 | 北京天科合达蓝光半导体有限公司 | 高质量碳化硅表面的获得方法 |
| US9006747B2 (en) * | 2011-08-26 | 2015-04-14 | National University Corporation NARA Institute of Science and Technology | SiC semiconductor element and manufacturing method thereof |
| CN102592976B (zh) * | 2012-03-22 | 2014-04-02 | 西安电子科技大学 | P型重掺杂碳化硅薄膜外延制备方法 |
| US10541306B2 (en) * | 2012-09-12 | 2020-01-21 | Cree, Inc. | Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device |
| US8940614B2 (en) * | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
| CN103614779B (zh) * | 2013-11-28 | 2016-03-16 | 中国电子科技集团公司第五十五研究所 | 一种提高碳化硅外延片片内n型掺杂浓度均匀性的方法 |
-
2013
- 2013-03-27 JP JP2013066491A patent/JP2014189442A/ja active Pending
-
2014
- 2014-03-26 US US14/647,774 patent/US9269572B2/en active Active
- 2014-03-26 CN CN201480009899.1A patent/CN105705684A/zh active Pending
- 2014-03-26 WO PCT/JP2014/058524 patent/WO2014157332A1/ja not_active Ceased