JP2014166957A5 - - Google Patents
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- Publication number
- JP2014166957A5 JP2014166957A5 JP2014089900A JP2014089900A JP2014166957A5 JP 2014166957 A5 JP2014166957 A5 JP 2014166957A5 JP 2014089900 A JP2014089900 A JP 2014089900A JP 2014089900 A JP2014089900 A JP 2014089900A JP 2014166957 A5 JP2014166957 A5 JP 2014166957A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon carbide
- nitrogen
- substrate
- carbide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 91
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 91
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 45
- 229910052757 nitrogen Inorganic materials 0.000 claims description 39
- 239000007789 gas Substances 0.000 description 61
- 238000000034 method Methods 0.000 description 45
- 238000004519 manufacturing process Methods 0.000 description 31
- 239000013078 crystal Substances 0.000 description 29
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 26
- 229910017464 nitrogen compound Inorganic materials 0.000 description 25
- 150000002830 nitrogen compounds Chemical class 0.000 description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 14
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 12
- 229910021529 ammonia Inorganic materials 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000001294 propane Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- 230000005587 bubbling Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014089900A JP2014166957A (ja) | 2014-04-24 | 2014-04-24 | 炭化珪素半導体およびその製造方法と製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014089900A JP2014166957A (ja) | 2014-04-24 | 2014-04-24 | 炭化珪素半導体およびその製造方法と製造装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010262775A Division JP5648442B2 (ja) | 2010-11-25 | 2010-11-25 | 炭化珪素半導体 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015051636A Division JP5896346B2 (ja) | 2015-03-16 | 2015-03-16 | 炭化珪素半導体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014166957A JP2014166957A (ja) | 2014-09-11 |
| JP2014166957A5 true JP2014166957A5 (enExample) | 2015-01-29 |
Family
ID=51616869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014089900A Pending JP2014166957A (ja) | 2014-04-24 | 2014-04-24 | 炭化珪素半導体およびその製造方法と製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2014166957A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106715767A (zh) * | 2014-10-01 | 2017-05-24 | 住友电气工业株式会社 | 碳化硅外延基板 |
| JP6362266B2 (ja) * | 2014-12-19 | 2018-07-25 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャル成長装置 |
| US9711353B2 (en) * | 2015-02-13 | 2017-07-18 | Panasonic Corporation | Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas |
| CN108431052B (zh) * | 2016-03-11 | 2021-02-09 | Jsr株式会社 | 聚合催化剂、共聚物、聚合物组合物和交联聚合物 |
| CN118064871B (zh) * | 2023-12-29 | 2025-05-09 | 苏州精材半导体科技有限公司 | 一种电阻率均匀的碳化硅膜及其制备方法 |
| CN119041030B (zh) * | 2024-11-01 | 2025-04-18 | 山东天岳先进科技股份有限公司 | 一种大尺寸、低电阻4h碳化硅晶棒、低电阻4h碳化硅晶片及制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2749898B2 (ja) * | 1989-08-21 | 1998-05-13 | 昭和電工株式会社 | 半導体ＳｉＣ単結晶の製造法 |
| JPH0629228A (ja) * | 1992-07-10 | 1994-02-04 | Nec Corp | 結晶成長方法 |
| JPH07131067A (ja) * | 1993-11-08 | 1995-05-19 | Sanyo Electric Co Ltd | 炭化ケイ素ウエハの製造方法及び炭化ケイ素発光ダイオード素子の製造方法 |
| JP3671532B2 (ja) * | 1996-07-19 | 2005-07-13 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
| JPH11162850A (ja) * | 1997-08-27 | 1999-06-18 | Matsushita Electric Ind Co Ltd | 炭化珪素基板およびその製造方法、並びに炭化珪素基板を用いた半導体素子 |
| TW411486B (en) * | 1998-01-17 | 2000-11-11 | Hanbekku Corp | Horizontal reaction furnace for manufacturing compound semiconductor |
| JP3650727B2 (ja) * | 2000-08-10 | 2005-05-25 | Ｈｏｙａ株式会社 | 炭化珪素製造方法 |
| KR101027485B1 (ko) * | 2001-02-12 | 2011-04-06 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 박막 증착을 위한 개선된 공정 |
| JP3999941B2 (ja) * | 2001-02-19 | 2007-10-31 | 株式会社荏原製作所 | Ｎｈ３を含むガスの処理方法及び処理装置 |
| JP4374786B2 (ja) * | 2001-02-23 | 2009-12-02 | 住友電気工業株式会社 | Ｃｖｄ装置および薄膜製造方法 |
-
2014
- 2014-04-24 JP JP2014089900A patent/JP2014166957A/ja active Pending
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