JP2014160063A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2014160063A
JP2014160063A JP2014011105A JP2014011105A JP2014160063A JP 2014160063 A JP2014160063 A JP 2014160063A JP 2014011105 A JP2014011105 A JP 2014011105A JP 2014011105 A JP2014011105 A JP 2014011105A JP 2014160063 A JP2014160063 A JP 2014160063A
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Japan
Prior art keywords
circuit
signal
supplied
memory circuit
selection
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Japanese (ja)
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JP2014160063A5 (enExample
Inventor
Takuo Oumaru
拓郎 王丸
Naoaki Tsutsui
直昭 筒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014011105A priority Critical patent/JP2014160063A/ja
Publication of JP2014160063A publication Critical patent/JP2014160063A/ja
Publication of JP2014160063A5 publication Critical patent/JP2014160063A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318533—Reconfiguring for testing, e.g. LSSD, partitioning using scanning techniques, e.g. LSSD, Boundary Scan, JTAG
    • G01R31/318597—JTAG or boundary scan test of memory devices

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2014011105A 2013-01-24 2014-01-24 半導体装置 Withdrawn JP2014160063A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014011105A JP2014160063A (ja) 2013-01-24 2014-01-24 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013010792 2013-01-24
JP2013010792 2013-01-24
JP2014011105A JP2014160063A (ja) 2013-01-24 2014-01-24 半導体装置

Related Child Applications (1)

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JP2018134772A Division JP6587718B2 (ja) 2013-01-24 2018-07-18 半導体装置

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JP2014160063A true JP2014160063A (ja) 2014-09-04
JP2014160063A5 JP2014160063A5 (enExample) 2017-02-16

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JP2014011105A Withdrawn JP2014160063A (ja) 2013-01-24 2014-01-24 半導体装置
JP2018134772A Expired - Fee Related JP6587718B2 (ja) 2013-01-24 2018-07-18 半導体装置
JP2019164312A Withdrawn JP2019212929A (ja) 2013-01-24 2019-09-10 半導体装置

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JP2018134772A Expired - Fee Related JP6587718B2 (ja) 2013-01-24 2018-07-18 半導体装置
JP2019164312A Withdrawn JP2019212929A (ja) 2013-01-24 2019-09-10 半導体装置

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US (1) US9190172B2 (enExample)
JP (3) JP2014160063A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018025774A (ja) * 2016-07-27 2018-02-15 株式会社半導体エネルギー研究所 半導体装置及び電子機器

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TWI646782B (zh) 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
CN112671388B (zh) 2014-10-10 2024-07-05 株式会社半导体能源研究所 逻辑电路、处理单元、电子构件以及电子设备
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JP2012134961A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 回路、回路の駆動方法、及び半導体装置

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JP2018025774A (ja) * 2016-07-27 2018-02-15 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP7044495B2 (ja) 2016-07-27 2022-03-30 株式会社半導体エネルギー研究所 半導体装置

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