JP2014138146A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2014138146A JP2014138146A JP2013007153A JP2013007153A JP2014138146A JP 2014138146 A JP2014138146 A JP 2014138146A JP 2013007153 A JP2013007153 A JP 2013007153A JP 2013007153 A JP2013007153 A JP 2013007153A JP 2014138146 A JP2014138146 A JP 2014138146A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
- H01L27/0277—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】複数のソース配線22は、同一形状の金属膜でそれぞれ構成され、複数のソース12を接地電圧配線22aにそれぞれ電気的に接続する。複数のドレイン配線23は、同一形状の金属膜でそれぞれ構成され、複数のドレイン12を入力電圧配線23aにそれぞれ電気的に接続する。複数のゲート配線21は、同一形状の金属膜でそれぞれ構成され、複数のゲート11を接地電圧配線22aにそれぞれ電気的に接続する。バックゲート配線24は、金属膜で構成され、バックゲート14を接地電圧配線22aに電気的に接続する。また、バックゲート配線24は、ソース12の上のソース配線22から分離される。
【選択図】図1
Description
ESDから内部回路を保護するESD保護回路には、通常NMOSトランジスタが使用される。このNMOSトランジスタのパターンは、例えば、図2に示すようにレイアウトされる。
まず、半導体装置の構成について説明する。図1は、半導体装置を示す平面図である。
半導体装置は、ESD保護回路用のNMOSトランジスタ10、接地電圧配線22a、及び、入力電圧配線23aを備える。
ソース12とゲート11とバックゲート14との電圧は、接地電圧であり、ドレイン13の電圧は、入力電圧である。よって、通常時では、NMOSトランジスタ10は、オフし、ドレイン13の入力電圧に影響を与えない。
ESDによるサージ電流が、入力電圧パッドから接地電圧パッドに流れる。この時、NMOSトランジスタ10の寄生ダイオードは、ブレイクダウン動作により、このサージ電流を逆方向に流している。すると、入力電圧パッドは半導体装置の内部回路に電気的に接続されているが、入力電圧パッドからのサージ電流は内部回路に流れない。よって、内部回路がサージ電流から保護される。
また、各ゲート11は、接地電圧配線22aでなくて各ソース配線22に、それぞれ接続しても良い。
また、各ゲート11において、ゲート11と接地電圧配線22aとの間に、抵抗成分が存在しても良い。
また、ソース12とドレイン13とバックゲート14とは、P型の半導体基板ではなくてP型のウェルの表面に設けても良い。
11 ゲート
12 ソース
13 ドレイン
14 バックゲート
19 コンタクト
21 ゲート配線
22 ソース配線
22a 接地電圧配線
23 ドレイン配線
23a 入力電圧配線
24 バックゲート配線
Claims (2)
- ESD保護回路用のNMOSトランジスタを備える半導体装置であって、
交互に配置された複数のソース及び複数のドレイン、前記ソースと前記ドレインとの間に形成された複数で偶数のチャネル、前記複数で偶数のチャネルの上に設けられた複数のゲート、及び、前記複数のソースの中で最も端の前記複数のソースの近傍に配置されたバックゲートを備える前記NMOSトランジスタと、
外部接続用の接地電圧パッドに電気的に接続された接地電圧配線と、
外部接続用の入力電圧パッドに電気的に接続された入力電圧配線と、
同一形状の金属膜でそれぞれ構成され、前記複数のソースを前記接地電圧配線にそれぞれ電気的に接続する複数のソース配線と、
同一形状の金属膜でそれぞれ構成され、前記複数のドレインを前記入力電圧配線にそれぞれ電気的に接続する複数のドレイン配線と、
金属膜でそれぞれ構成され、前記複数のゲートを前記接地電圧配線にそれぞれ電気的に接続する複数のゲート配線と、
金属膜で構成され、前記複数のソース配線から分離され、前記バックゲートを前記接地電圧配線に電気的に接続するバックゲート配線と、
を有する半導体装置。 - 複数の前記ゲート配線は、同一形状の金属膜でそれぞれ構成されていることを特徴とする請求項1記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013007153A JP6099986B2 (ja) | 2013-01-18 | 2013-01-18 | 半導体装置 |
EP13871991.9A EP2947681A4 (en) | 2013-01-18 | 2013-12-20 | SEMICONDUCTOR COMPONENT |
CN201380070544.9A CN104919577B (zh) | 2013-01-18 | 2013-12-20 | 半导体装置 |
PCT/JP2013/084288 WO2014112293A1 (ja) | 2013-01-18 | 2013-12-20 | 半導体装置 |
US14/761,670 US9397088B2 (en) | 2013-01-18 | 2013-12-20 | Semiconductor device |
KR1020157018944A KR102082643B1 (ko) | 2013-01-18 | 2013-12-20 | 반도체 장치 |
TW102148939A TWI575698B (zh) | 2013-01-18 | 2013-12-30 | 半導體裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013007153A JP6099986B2 (ja) | 2013-01-18 | 2013-01-18 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014138146A true JP2014138146A (ja) | 2014-07-28 |
JP6099986B2 JP6099986B2 (ja) | 2017-03-22 |
Family
ID=51209395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013007153A Expired - Fee Related JP6099986B2 (ja) | 2013-01-18 | 2013-01-18 | 半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9397088B2 (ja) |
EP (1) | EP2947681A4 (ja) |
JP (1) | JP6099986B2 (ja) |
KR (1) | KR102082643B1 (ja) |
CN (1) | CN104919577B (ja) |
TW (1) | TWI575698B (ja) |
WO (1) | WO2014112293A1 (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013008715A (ja) * | 2011-06-22 | 2013-01-10 | Semiconductor Components Industries Llc | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61216477A (ja) * | 1985-03-22 | 1986-09-26 | Nec Corp | 半導体装置 |
JP3237110B2 (ja) * | 1998-03-24 | 2001-12-10 | 日本電気株式会社 | 半導体装置 |
US6310379B1 (en) * | 1999-06-03 | 2001-10-30 | Texas Instruments Incorporated | NMOS triggered NMOS ESD protection circuit using low voltage NMOS transistors |
JP4620282B2 (ja) * | 2001-04-24 | 2011-01-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2007096211A (ja) * | 2005-09-30 | 2007-04-12 | Ricoh Co Ltd | 半導体装置 |
JP5586819B2 (ja) * | 2006-04-06 | 2014-09-10 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
US7847904B2 (en) * | 2006-06-02 | 2010-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
JP2008193019A (ja) | 2007-02-08 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
US8178908B2 (en) * | 2008-05-07 | 2012-05-15 | International Business Machines Corporation | Electrical contact structure having multiple metal interconnect levels staggering one another |
JP5694020B2 (ja) * | 2011-03-18 | 2015-04-01 | トランスフォーム・ジャパン株式会社 | トランジスタ回路 |
TWI456900B (zh) * | 2011-11-17 | 2014-10-11 | Global Unichip Corp | 訊號延遲電路和訊號延遲方法 |
-
2013
- 2013-01-18 JP JP2013007153A patent/JP6099986B2/ja not_active Expired - Fee Related
- 2013-12-20 KR KR1020157018944A patent/KR102082643B1/ko active IP Right Grant
- 2013-12-20 US US14/761,670 patent/US9397088B2/en active Active
- 2013-12-20 WO PCT/JP2013/084288 patent/WO2014112293A1/ja active Application Filing
- 2013-12-20 EP EP13871991.9A patent/EP2947681A4/en not_active Ceased
- 2013-12-20 CN CN201380070544.9A patent/CN104919577B/zh not_active Expired - Fee Related
- 2013-12-30 TW TW102148939A patent/TWI575698B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013008715A (ja) * | 2011-06-22 | 2013-01-10 | Semiconductor Components Industries Llc | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6099986B2 (ja) | 2017-03-22 |
CN104919577A (zh) | 2015-09-16 |
KR102082643B1 (ko) | 2020-02-28 |
EP2947681A4 (en) | 2016-08-17 |
KR20150109360A (ko) | 2015-10-01 |
WO2014112293A1 (ja) | 2014-07-24 |
CN104919577B (zh) | 2017-11-21 |
TW201444050A (zh) | 2014-11-16 |
US20150364464A1 (en) | 2015-12-17 |
US9397088B2 (en) | 2016-07-19 |
EP2947681A1 (en) | 2015-11-25 |
TWI575698B (zh) | 2017-03-21 |
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