JP2014120755A - 単層コアレス基板 - Google Patents
単層コアレス基板 Download PDFInfo
- Publication number
- JP2014120755A JP2014120755A JP2013072392A JP2013072392A JP2014120755A JP 2014120755 A JP2014120755 A JP 2014120755A JP 2013072392 A JP2013072392 A JP 2013072392A JP 2013072392 A JP2013072392 A JP 2013072392A JP 2014120755 A JP2014120755 A JP 2014120755A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- copper
- dielectric material
- routing
- chip package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 239000002356 single layer Substances 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 71
- 239000003989 dielectric material Substances 0.000 claims abstract description 55
- 239000003365 glass fiber Substances 0.000 claims abstract description 24
- 239000011159 matrix material Substances 0.000 claims abstract description 12
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 82
- 229910052802 copper Inorganic materials 0.000 claims description 73
- 239000010949 copper Substances 0.000 claims description 73
- 230000004888 barrier function Effects 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 238000007747 plating Methods 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 34
- 239000011133 lead Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 24
- 229920001955 polyphenylene ether Polymers 0.000 claims description 24
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 23
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000835 fiber Substances 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 239000011135 tin Substances 0.000 claims description 17
- 239000002952 polymeric resin Substances 0.000 claims description 16
- 229920003002 synthetic resin Polymers 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229920001721 polyimide Polymers 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 13
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 13
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000004809 Teflon Substances 0.000 claims description 10
- 229920006362 Teflon® Polymers 0.000 claims description 10
- 239000012778 molding material Substances 0.000 claims description 10
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 9
- 229910001080 W alloy Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 8
- 229910000978 Pb alloy Inorganic materials 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000011889 copper foil Substances 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000009719 polyimide resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- VSSLEOGOUUKTNN-UHFFFAOYSA-N tantalum titanium Chemical compound [Ti].[Ta] VSSLEOGOUUKTNN-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229920002430 Fibre-reinforced plastic Polymers 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000000788 chromium alloy Substances 0.000 claims description 2
- 238000002845 discoloration Methods 0.000 claims description 2
- 239000011256 inorganic filler Substances 0.000 claims description 2
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 163
- 238000004806 packaging method and process Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 229910000497 Amalgam Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012783 reinforcing fiber Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
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- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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Abstract
【解決手段】ルーティング層114を備えるインターポーザ124のルーティング層114に接合される少なくとも1個のチップ110およびポリマーマトリクス内にガラスファイバを備える誘電材料116によって取り囲まれるビア柱層112を備える電子チップパッケージ100であって、この少なくとも1個のチップ110、ルーティング層114およびワイヤ118を封入する誘電材料の第2層を更に備える電子チップパッケージ100、ならびにこの種の電子チップパッケージ100を製作する方法である。
【選択図】図1
Description
(a)犠牲基板を選択するステップ;
(b)前記犠牲基板上へ耐エッチング液バリア層を堆積するステップ;
(c)ビア柱の層をメッキするステップ;
(d)誘電材料によってビア柱の層を積層するステップ;
(e)誘電層を薄くして平坦化するステップ;
(f)ビア層の上にルーティングフィーチャの層をメッキするステップ;
(g)少なくとも1個のチップを取り付けるステップ、および
(h)第2の誘電材料によってこの少なくとも1個のチップおよびルーティングフィーチャを封入するステップ。
(i)犠牲基板を除去するステップ、および
(j)バリア層を除去するステップ。
・タンタル、タングステン、チタン、チタンタンタル合金、チタンタングステン合金、ニッケル、スズ、鉛およびスズ鉛合金のリストから選択される金属を備え、および、前記堆積するステップがスパッタリングを含むか、または
・ニッケル、スズ、鉛およびスズ/鉛合金のリストから選択される金属を備え、および、前記堆積するステップが電気メッキおよび無電解メッキのリストから選択されるプロセスによるものであるか、のどちらかである。
・フォトレジストの層を置くステップ;
・前記フォトレジストの層内にビアのパターンを現像するステップ;
・前記パターンに銅をメッキするステップ、および
・フォトレジストを剥離して前記ビアを直立したままにするステップ。
・銅の連続層をパネルメッキするステップ;
・前記銅の連続層の上にフォトレジストの層を堆積するステップ;
・前記フォトレジストの層内にビアのパターンを現像するステップ;
・前記パターンを残すために余剰銅をエッチング除去するステップ、および
・現像されたフォトレジストを剥離して前記ビアを直立したままにするステップ。
(a)0.5ミクロンと30ミクロンの間の平均粒子径および15重量%と30重量%の間の微粒子を有する無機粒状フィラー;
(b)直交積層配置、編マットおよびランダムな向きに切り刻まれたファイバのリストから選択される配置で配置される有機ファイバおよびガラスファイバのリストから選択されるファイバ。
(a)0.5ミクロンと30ミクロンの間の平均粒子径および15重量%と30重量%の間の微粒子を有する無機粒状フィラー;
(b)直交積層配置、編マットおよびランダムな向きに切り刻まれたファイバのリストから選択される配置で配置される有機ファイバおよびガラスファイバのリストから選択されるファイバ。
(i)誘電層の上に銅をパネルメッキして、その上にフォトレジストの層を置き、ルーティングフィーチャのポジパターンを現像し、余分な銅を選択的にエッチング除去してルーティングフィーチャを残し、かつフォトレジストを剥離するステップか、または
(ii)フォトレジストの層を置き、溝のパターンを現像し、前記溝の中にルーティングフィーチャをパターンメッキし、かつフォトレジストを剥離するステップ。
(i)フォトレジストの層を置くステップ;
(ii)前記フォトレジストの層内にビア112のパターンを現像するステップ;
(iii)前記パターンに銅ビア112をメッキするステップ、および
(iv)フォトレジストを剥離してビア柱112を直立したままにするステップ。
・銅の連続層をパネルメッキするステップ;
・前記銅の連続層の上にフォトレジストの層を堆積するステップ;
・前記フォトレジストの層内にビアのパターンを現像するステップ;
・直立ビア柱112を残すために余剰銅をエッチング除去するステップ、および
・現像されたフォトレジストを剥離してビア柱112を直立したままにするステップ。
(a)0.5ミクロンと30ミクロンの間の平均粒子径および15重量%と30重量%の間の微粒子を有する無機粒状フィラー;
(b)直交積層配置、編マットおよびランダムな向きに切り刻まれたファイバのリストから選択される配置で配置される有機ファイバおよびガラスファイバのリストから選択されるファイバ。
(i)前記誘電層の上に銅をパネルメッキして、その上にフォトレジストの層を置き、ルーティンフィーチャのポジパターンを現像し、余分な銅を選択的にエッチング除去してルーティングフィーチャ114を残し、かつフォトレジストを剥離するステップか、または
(ii)フォトレジストの層を置き、溝のパターンを現像し、この溝の中にルーティングフィーチャ114をパターンメッキし、かつフォトレジストを剥離するステップ。
110 チップ
112 銅ビア柱
114 銅ルーティングフィーチャ
116 誘電材料
118 ワイヤボンド
120 モールディング材料
122 犠牲基板
124 インターポーザ
126 エッチングバリア層
128 終端材料
222 犠牲基板
300 変形支持構造体
310 チップ
314 ルーティング層
318 ボールグリッドアレイ
320 ポリマープリプレグ ファイバ強化誘電体
324 インターポーザ
412 ビア柱
414 ルーティング層
418 銅ワイヤ
424 インターポーザ
Claims (45)
- ルーティング層およびビア柱層を備えるインターポーザのルーティング層に接合される少なくとも1個のチップを備える電子チップパッケージであって、前記ビア柱層が、ポリマー樹脂内にガラスファイバを備える誘電材料によって取り囲まれ、ならびに、前記チップおよびルーティング層が前記チップおよび前記ルーティング層を封入する誘電材料の第2層内に埋め込まれることを特徴とする電子チップパッケージ。
- 前記ルーティング層から前記ビア柱層の反対側の側面上に金属犠牲ベースを更に備える請求項1に記載の電子チップパッケージ。
- 前記ビア柱層内の少なくとも1本のビア柱が、XY平面内の短い寸法の長さの少なくとも3倍のXY平面内の長い寸法を有することによって特徴づけられる非円柱形の形状を有することを特徴とする請求項1に記載の電子チップパッケージ。
- 前記インターポーザの下側が、前記ビア柱の銅端部が前記誘電材料と同一平面上であるように前記誘電材料によって取り囲まれる前記ビア柱の前記銅端部を備えることを特徴とする請求項1に記載の電子チップパッケージ。
- 前記インターポーザの下側が、前記ビア柱の銅端部が前記誘電材料に対して5ミクロンまでだけへこむように前記誘電材料によって取り囲まれる前記ビア柱の前記銅端部を備えることを特徴とする請求項1に記載の電子チップパッケージ。
- 前記ビア層が、銅ビアおよび、ビア柱のバリアメタル端部が前記誘電材料と同一平面上にあるように前記誘電材料によって取り囲まれる前記バリアメタルを備える前記ビア柱の端部を前記インターポーザの下側が備えるように前記ルーティング層から遠ざけられる端部を覆う前記バリアメタル層を備えることを特徴とする請求項1に記載の電子チップパッケージ。
- 前記ビアバリアメタル層が、ニッケル、金、スズ、鉛、パラジウム、銀およびそれらの組合せからなる群から選択されることを特徴とする請求項6に記載の電子チップパッケージ。
- 前記ビアバリアメタル層が、1ミクロンから10ミクロンの範囲の厚さを有することを特徴とする請求項7に記載の電子チップパッケージ。
- 前記少なくとも1個のチップが前記ルーティング層にバンプの配列によって接合されるフリップチップとして構成されることを特徴とする請求項1に記載の電子チップパッケージ。
- 前記誘電体の第2層が、ガラスファイバ強化ポリマーであることを特徴とする請求項9に記載の電子チップパッケージ。
- 前記少なくとも1個のチップがワイヤボンドによって前記ルーティング層に接合され、および、前記誘電体の第2層がモールドコンパウンドであることを特徴とする請求項9に記載の電子チップパッケージ。
- 前記ビア柱を取り囲む前記誘電体の第1層が、第1のポリマー樹脂を備え、ならびに、前記ルーティング層および前記少なくとも1個のチップを取り囲む前記誘電材料の第2層が、第2のポリマー樹脂を備え、前記第1のポリマー樹脂が、前記第2のポリマー樹脂と異なることを特徴とする請求項1に記載の電子チップパッケージ。
- 前記ビア柱を取り囲む前記誘電体の第1層が、無機フィラーを備えることを特徴とする請求項1に記載の電子チップパッケージ。
- 前記ビア柱を取り囲む前記誘電体の第1層の前記ポリマー樹脂が、ポリイミド、エポキシ、BT(ビスマレイミド/トリアジン)、ポリフェニレンエーテル(PPE)、ポリフェニレンオキシド(PPO)およびそれらの混和物からなる群から選択されることを特徴とする請求項1に記載の電子チップパッケージ。
- 電子チップパッケージを製作する方法であって以下のステップ、すなわち:
(a)犠牲基板を選択するステップ;
(b)前記犠牲基板上へ耐エッチング液バリア層を堆積するステップ;
(c)ビア柱の層をメッキするステップ;
(d)誘電材料によって前記ビア柱の層を積層するステップ;
(e)前記誘電層を薄くしてかつ平坦化するステップ;
(f)前記ビア層の上にルーティングフィーチャの層をメッキするステップ;
(g)少なくとも1個のチップを取り付けるステップ、および
(h)第2の誘電材料によって前記少なくとも1個のチップおよびルーティングフィーチャを封入するステップ
(i)前記犠牲基板を除去するステップ、および
(j)バリア層を除去するステップを含む方法。 - ステップ(g)が前記ルーティングフィーチャに前記少なくとも1個のチップをワイヤボンディングするステップを含み、および、ステップ(h)がモールディング材料によって封入するステップを含むことを特徴とする請求項15に記載の方法。
- ステップ(g)がバンプの配列によって前記ルーティングフィーチャに前記少なくとも1個のチップをフリップチップボンディングするステップを含むことを特徴とする請求項15に記載の方法。
- ステップ(h)がポリマープリプレグ内にガラスファイバによって封入するステップを含むことを特徴とする請求項17に記載の方法。
- 前記犠牲基板が剥離可能な銅基板、剥離層および超微細銅箔を備え、および、前記犠牲基板の除去のステップ(i)が前記剥離可能な銅基板を剥離してかつ残りの銅箔をエッチング除去するステップを含むことを特徴とする請求項15に記載の方法。
- 前記スタックの外面上にビアの端部を露出するために前記耐エッチング液バリア層を除去してかつ前記ビアの端部に終端部を付加することによって前記基板を終端するステップ(k)を更に含む請求項15に記載の方法。
- 請求項15に記載の方法であって、ステップ(b)の前記バリア層が0.1ミクロンから数10ミクロンの範囲内の厚さに堆積され、かつ:
タンタル、タングステン、チタン、チタンタンタル合金、チタンタングステン合金、ニッケル、スズ、鉛およびスズ鉛合金のリストから選択される金属を備え、および、前記堆積するステップがスパッタリングを含むか、
またはニッケル、スズ、鉛およびスズ−鉛合金のリストから選択される金属を備え、および、前記堆積するステップが電気メッキおよび無電解メッキのリストから選択されるプロセスによるものである、のどちらかであることを特徴とする方法。 - 請求項21に記載の方法であって、ビア柱の層をメッキするステップ(c)が、以下のサブステップ、すなわち:
フォトレジストの層を置くステップ;
前記フォトレジストの層内にビアのパターンを現像するステップ;
前記パターンに銅をメッキし、かつ前記フォトレジストを剥離して前記ビアを直立したままにするステップ、によって前記ビア柱の層をパターンメッキするステップを含むことを特徴とする方法。 - ビア柱の層をメッキするステップ(c)が、終端材料を堆積してかつ前記終端部材料上にビア柱を構築するステップを含むことを特徴とする請求項21に記載の方法。
- 前記終端金属がスズ、スズ−鉛合金、金、銀およびパラジウムから成る群の少なくとも1つを備えることを特徴とする請求項23に記載の方法。
- 請求項15に記載の方法であって、ビア柱の層をメッキするステップ(c)が、以下のサブステップ、すなわち:
銅の連続層をパネルメッキするステップ;
前記銅の連続層の上にフォトレジストの層を堆積するステップ;
前記フォトレジストの層内にビアのパターンを現像するステップ;
前記パターンを残すために余剰銅をエッチング除去し、かつ前記現像されたフォトレジストを剥離して前記ビアを直立したままにするステップ、によって前記ビア柱の層をパネルメッキするステップを含むことを特徴とする方法。 - 前記第1の誘電材料がテフロン、テフロンの誘導体、ビスマレイミドトリアジン樹脂、エポキシ樹脂、ポリイミド樹脂、ポリフェニレンエーテル(PPE)、ポリフェニレンオキシド(PPO)およびそれらの混合物からなる群から選択されるポリマー樹脂を備えることを特徴とする請求項15に記載の方法。
- 請求項26に記載の方法であって、前記第1の誘電材料が以下、すなわち:
(a)0.5ミクロンと30ミクロンの間の平均粒子径および15重量%と30重量%の間の微粒子を有する無機粒状フィラー;
(b)直交積層配置、編マットおよびランダムな向きに切り刻まれたファイバのリストから選択される配置で配置される有機ファイバおよびガラスファイバのリストから選択されるファイバ、のうち少なくとも1つを更に備えることを特徴とする方法。 - 誘電材料によって前記ビア柱の層を積層するステップ(d)が、ポリイミド、エポキシまたはBT(ビスマレイミド/トリアジン)、ポリフェニレンエーテル(PPE)、ポリフェニレンオキシド(PPO)またはそれらの混和物からなる群から選択されるマトリクス内のガラスファイバを備えるプリプレグを塗布し、かつ前記ビアの上に前記プリプレグをホットプレス積層することによって硬化するステップを含むことを特徴とする請求項15に記載の方法。
- 前記第2の誘電材料がテフロン、テフロンの誘導体、ビスマレイミドトリアジン樹脂、エポキシ樹脂、ポリイミド樹脂、およびそれらの混合物からなる群から選択されるポリマー樹脂を備えることを特徴とする請求項15に記載の方法。
- 請求項29に記載の方法であって、前記第2の誘電材料が以下、すなわち:
(a)0.5ミクロンと30ミクロンの間の平均粒子径および15重量%と30重量%の間の微粒子を有する無機粒状フィラー;
(b)直交積層配置、編マットおよびランダムな向きに切り刻まれたファイバのリストから選択される配置で配置される有機ファイバおよびガラスファイバのリストから選択されるファイバ、のうち少なくとも1つを更に備えることを特徴とする方法。 - 誘電材料によって前記ビア柱の層を積層するステップ(h)が、ポリイミド、エポキシまたはBT(ビスマレイミド/トリアジン)、ポリフェニレンエーテル(PPE)、ポリフェニレンオキシド(PPO)またはそれらの混和物からなる群から選択されるマトリクス内のガラスファイバを備えるプリプレグを塗布し、かつ前記チップおよびルーティング層の上に前記プリプレグをホットプレス積層することによって硬化するステップを含むことを特徴とする請求項15に記載の方法。
- 前記誘電層を薄くしてかつ平坦化するステップ(e)が、ドライエッチング、機械研削、化学機械研摩CMP、それらの組合せおよび2ステージプロセスからなる群から選択されることを特徴とする請求項15に記載の方法。
- 請求項15に記載の方法であって、前記ビア層の上にルーティングフィーチャの層をメッキするステップ(f)が、次のステップ、すなわち:
(i)前記誘電層の上に銅をパネルメッキして、その上にフォトレジストの層を置き、ルーティンフィーチャのポジパターンを現像し、余分な銅を選択的にエッチング除去して前記ルーティングフィーチャを残し、かつ前記フォトレジストを剥離するステップか、または
(ii)フォトレジストの層を置き、溝のパターンを現像し、前記溝の中にルーティンフィーチャをパターンメッキし、かつ前記フォトレジストを剥離するステップ、のどちらかを含むことを特徴とする方法。 - 前記ステップ(f)が前記薄くされた誘電材料上へ接着金属層を堆積する予備ステップを更に含むことを特徴とする請求項33に記載の方法。
- 前記接着金属層がチタン、クロム、およびニッケル/クロム合金からなる群から選択されることを特徴とする請求項34に記載の方法。
- 前記チップを取り付ける前記ステップ(g)が、はんだを塗布するステップを含むことを特徴とする請求項15に記載の方法。
- 前記チップを前記ルーティングフィーチャに取り付ける前記ステップ(g)が、前記チップから前記ルーティングフィーチャまで及ぶ金、アルミニウムまたは銅のワイヤを備えることを特徴とする請求項15に記載の方法。
- 前記犠牲基板を除去する前記ステップ(i)が、前記銅をエッチング除去するステップを含むことを特徴とする請求項15に記載の方法。
- 前記犠牲基板を除去する前記ステップ(i)が、第1の銅層を剥がしてかつ残りの銅をエッチング除去するステップを含むことを特徴とする請求項15に記載の方法。
- 前記犠牲基板をエッチング除去するステップ(i)がウエットエッチングプロセスを使用し、および、ステップ(b)で作られる前記耐エッチング液バリア層がエッチストップ層として作用することを特徴とする請求項39に記載の方法。
- ステップ(b)で作られる前記バリア層がタンタルを備え、および、前記犠牲基板をエッチング除去するステップ(i)用の前記エッチングプロセスが前記犠牲基板を高い温度で水酸化アンモニウムの溶液にさらすステップを含むことを特徴とする請求項40に記載の方法。
- 前記犠牲基板が、銅張り積層板を備えることを特徴とする請求項15に記載の方法。
- ステップ(b)で作られる前記耐エッチング液バリア層がタンタル、チタンおよびタングステンおよびチタンタングステン合金からなる群から選択され、ならびに、耐エッチング液バリア層を除去するステップ(j)がCF4およびアルゴンの混合物を使用するプラズマエッチングを含むことを特徴とする請求項15に記載の方法。
- ステップ(b)で作られる前記耐エッチング液バリア層がタンタル、チタン、タングステンおよびチタンタングステン合金からなる群から選択され、ならびに、耐エッチング液バリア層を除去するステップ(j)がCF4および酸素の混合物を使用するプラズマエッチングを含むことを特徴とする請求項15に記載の方法。
- ニッケル、金、スズ、鉛、銀、パラジウムおよびそれらの合金からなる群から選択される前記ビアの露出端部に対する最終コーティングおよび有機反変色仕上げを塗布するステップを更に含む請求項15に記載の方法。
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CN103871998A (zh) | 2014-06-18 |
JP6393878B2 (ja) | 2018-09-26 |
US8866286B2 (en) | 2014-10-21 |
US20140377914A1 (en) | 2014-12-25 |
TWI670814B (zh) | 2019-09-01 |
KR101486722B1 (ko) | 2015-01-28 |
KR20140077090A (ko) | 2014-06-23 |
US8945994B2 (en) | 2015-02-03 |
CN103871998B (zh) | 2017-06-06 |
TW201423926A (zh) | 2014-06-16 |
US20140167234A1 (en) | 2014-06-19 |
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