JP2015517745A - ワイヤボンド相互接続を用いた基板レス積層可能パッケージ - Google Patents
ワイヤボンド相互接続を用いた基板レス積層可能パッケージ Download PDFInfo
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- JP2015517745A JP2015517745A JP2015514105A JP2015514105A JP2015517745A JP 2015517745 A JP2015517745 A JP 2015517745A JP 2015514105 A JP2015514105 A JP 2015514105A JP 2015514105 A JP2015514105 A JP 2015514105A JP 2015517745 A JP2015517745 A JP 2015517745A
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- Prior art keywords
- microelectronic
- conductive
- wire bond
- package
- sealing layer
- Prior art date
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- Pending
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- 238000004377 microelectronic Methods 0.000 claims abstract description 327
- 238000007789 sealing Methods 0.000 claims abstract description 129
- 238000000034 method Methods 0.000 claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 25
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- 230000008569 process Effects 0.000 description 27
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- 239000000463 material Substances 0.000 description 16
- 239000011295 pitch Substances 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000003989 dielectric material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
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- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
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- 238000005538 encapsulation Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
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Classifications
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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Abstract
Description
Claims (30)
- パターニング可能な金属要素を備えた構造体の導電性ボンディング面である第1の面に複数のワイヤボンドを形成するステップであって、前記ワイヤボンドは、前記第1の面に接合されたベース部と、該ベース部と前記第1の面とから離れた位置にある端面と、前記ベース部と前記端面との間に広がるエッジ面とを有している、ステップと、
導電性層の前記第1の面の少なくとも一部分と前記ワイヤボンドの一部分とを覆うように誘電性封止層を形成するステップであって、前記ワイヤボンドの封止されていない部分が、前記端面と、前記封止層により覆われていない前記ワイヤボンドのエッジ面の一部分とのいずれか又は両方である、ステップと、
前記金属要素を選択的にパターニングし、前記封止層の少なくとも一部分により互いに間隔を置いて配置された第1の導電性要素を形成するステップであって、該第1の導電性要素の上に前記ワイヤボンドの少なくともいくつかが位置している、ステップと
を含む、超小型電子ユニットを製造する方法。 - 前記構造体に超小型電子素子が設けられており、前記導電性層の一部分を除去する際に前記超小型電子素子が前記導電性層と電気的に接続される、請求項1に記載の方法。
- 前記誘電性封止層の形成は、前記超小型電子素子が前記導電性層と電気的に接続された状態で、該封止層が前記導電性層の少なくとも1つの面を少なくとも部分的に覆うものとなるように行われる、請求項2に記載の方法。
- 前記第1の導電性要素の少なくともいくつかは、前記ワイヤボンドの各々と前記超小型電子素子との間で電気的に接続される、請求項2に記載の方法。
- 前記封止層の第2の面に、前記ワイヤボンドの露出していない部分から少なくとも1つの横の方向に変位した導電性コンタクトを有する再分配層を形成するステップを更に含む請求項1に記載の方法。
- 前記ワイヤボンドの少なくともいくつかは、前記ワイヤボンドの端面が前記ワイヤボンドのベース部から1以上の横の方向に変位したものとなるように形成される、請求項1に記載の方法。
- 前記ベース部は第1の最小ピッチを有する第1のパターンで配置され、
前記ワイヤボンドの封止されていない部分は、前記第1の最小ピッチよりも大きい第2の最小ピッチを有するパターンで配置される、請求項1に記載の方法。 - 前記ベース部は第1の最小ピッチを有する第1のパターンで配置され、
前記ワイヤボンドの封止されていない部分は、前記第1の最小ピッチよりも小さい第2の最小ピッチを有するパターンで配置される、請求項1に記載の方法。 - 前記ワイヤボンドのベース部がボールボンディング形式である、請求項1に記載の方法。
- 前記ベース部と前記端面との間に広がる前記ワイヤボンドのエッジ面が第1のエッジ面部分であり、
前記ワイヤボンドのベース部が、前記第1の導電性要素に沿って広がるエッジ面の第2の部分である、請求項1に記載の方法。 - 前記誘電性層の第2の面に第2の導電性要素を形成するステップであって、該第2の導電性要素の少なくともいくつかは、前記ワイヤボンドの封止されていない部分の少なくともいくつかの各々と接続される、ステップを更に含む請求項1に記載の方法。
- 前記導電性層の一部分を選択的に除去することは、少なくともいくつかの第1の導電性要素をコンタクトパッドとして形成することを含み、該コンタクトパッドには、前記ユニットの他の要素と電気的に接続されていない前記ワイヤボンドのベース部が電気的に接続される、請求項1に記載の方法。
- グラインド又は研磨により前記ユニットを薄くするステップを更に含む請求項1に記載の方法。
- 前記封止層は、前記ワイヤボンドの前記端面が実質的に覆われるような当初の厚さを有するものとして形成され、
前記ユニットを薄くするステップは、前記端面が前記封止層により封止されていない状態となるように前記封止層の一部分を除去するステップを含むものである、請求項13に記載の方法。 - 前記封止層を形成するステップは、前記導電性層の前記第1の面と前記ワイヤボンドの少なくともエッジ面とに封止材を分注するステップを含むものである、請求項1に記載の方法。
- 前記封止層を形成するステップは、前記導電性層と、前記ワイヤボンドの少なくともエッジ面と、少なくとも前記超小型電子素子の面とに封止材を接触させて形作るステップを含むものである、請求項2に記載の方法。
- 前記導電性層の一部分を選択的に除去する前に、前記導電性層の、前記ワイヤボンドと反対側の面から担体を除去するステップを更に含む請求項1に記載の方法。
- 前記導電性層の厚さが20ミクロン未満である、請求項17に記載の方法。
- 製造過程にあるユニットの導電性層の第1の面に複数のワイヤボンドを形成するステップであって、前記製造過程にあるユニットは、該ユニットに接合されているとともに該ユニットの一部分と電気的に接続されている少なくとも1つの超小型電子素子を有するものであり、前記ワイヤボンドは、前記第1の面に接合されているベース部と、該ベース部と前記第1の面とから離れた位置にある端面と、前記ベース部と前記端面との間に広がるエッジ面とを有するものである、ステップと、
前記導電性層の前記第1の面の少なくとも一部分と、少なくとも1つの前記超小型電子素子の少なくとも一部分と、前記ワイヤボンドの一部分とを覆うように誘電性封止層を形成するステップであって、前記ワイヤボンドの封止されていない部分が、前記端面と、前記封止層により覆われていない前記ワイヤボンドのエッジ面の一部分とのいずれか又は両方である、ステップと、
前記導電性層の一部分を選択的に除去し、第1の導電性要素を形成するステップであって、前記第1の導電性要素の少なくともいくつかは、前記ワイヤボンドの少なくともいくつかと電気的に接続されており、前記第1の導電性要素の少なくともいくつかは、前記超小型電子素子が電気的に接続される前記導電性層の一部分のうちの少なくともいくつかを有するものである、ステップと
を含む、超小型電子パッケージを製造する方法。 - パターニング可能な金属要素を備えた構造体の導電性ボンディング面である第1の面に複数のワイヤボンドを形成するステップであって、前記ワイヤボンドは、前記第1の面に接合されているベース部と、該ベース部と前記第1の面とから離れた位置にある端面と、前記ベース部と前記端面との間に広がるエッジ面とを有するものであり、前記ワイヤボンドの形成の際に、前記導電性層は、その少なくともいくつかのエッジ部において互いに接着した複数の領域を有している、ステップと、
前記導電性層の第1の面の少なくとも一部分と前記ワイヤボンドの一部分とを覆うように誘電性封止層を形成するステップであって、前記ワイヤボンドの封止されていない部分が、前記端面と、前記封止層により覆われていない前記ワイヤボンドのエッジ面の一部分とのいずれか又は両方であり、前記封止層の一部分を選択的に除去する際に、複数の超小型電子素子が、前記導電性層の前記領域の少なくともいくつかの各々に電気的に接続された少なくとも1つの超小型電子素子を有する、製造過程にあるユニットの形態で前記導電性層に接合されている、ステップと、
前記金属要素を選択的にパターニングし、前記封止層の少なくとも一部分により互いに間隔を置いて配置された第1の導電性要素を形成するステップであって、前記ワイヤボンドの少なくともいくつかは前記第1の導電性要素の上に位置している、ステップと、
前記製造過程にあるユニットを、前記導電性層の領域にある前記第1の導電性要素と、該第1の導電性要素に電気的に接続された少なくとも1つの前記超小型電子素子とを各々が有する複数の超小型電子ユニットに分けるステップと
を含む、超小型電子ユニットを製造する方法。 - 製造過程にあるユニットの導電性層の第1の面に複数のワイヤボンドを形成するサブステップであって、前記製造過程にあるユニットは、該ユニットに接合されているとともに該ユニットの一部分と電気的に接続された少なくとも1つの超小型電子素子を有するものであり、前記ワイヤボンドは、前記第1の面に接合されているベース部と、該ベース部と前記第1の面とから離れた位置にある端面と、前記ベース部と前記端面との間に広がるエッジ面とを有するものである、サブステップと、
前記導電性層の前記第1の面の少なくとも一部分と、少なくとも1つの前記超小型電子素子の少なくとも一部分と、前記ワイヤボンドの一部分とを覆うように誘電性封止層を形成するサブステップであって、前記ワイヤボンドの封止されていない部分が、前記端面と、前記封止層により覆われていない前記ワイヤボンドのエッジ面の一部分とのいずれか又は両方である、サブステップと、
前記導電性層の一部分を選択的に除去し、第1の導電性要素を形成するサブステップであって、前記第1の導電性要素の少なくともいくつかは前記ワイヤボンドの少なくともいくつかと電気的に接続され、前記第1の導電性要素の少なくともいくつかは、前記超小型電子素子が電気的に接続されている前記導電性層の一部分のうちの少なくともいくつかを有するものである、サブステップと
を含む、第1の超小型電子パッケージを段階的に製造するステップと、
前記第1の超小型電子パッケージを、該第1のパッケージの前記封止層の第2の面上に設けた第2の超小型電子パッケージと接合するステップであって、前記第2の超小型電子パッケージは該第2の超小型電子パッケージの第1の面において露出した複数のコンタクトを有するものである、ステップと
を含み、
前記第1の超小型電子パッケージを前記第2の超小型電子パッケージと接合する前記ステップは、前記第1の超小型電子パッケージのワイヤボンドの封止されていない部分を、前記第2の超小型電子パッケージの前記コンタクトと電気的に接続するステップを含むものである、超小型電子アセンブリを製造する方法。 - 少なくとも1つの超小型電子素子と、
パッケージの取付面において露出している端子を備えた第1の導電性要素であって、前記第1の導電性要素の少なくともいくつかは、前記第1の導電性要素と一体に形成されたビアにより少なくとも1つの前記超小型電子素子に電気的に接続されている、第1の導電性要素と、
前記導電性要素の各々に接合され、誘電性封止層の第1の面の近傍にあるベース部と、該ベース部から離れた位置にある端面とを有するワイヤボンドであって、各ワイヤボンドには、該ワイヤボンドの前記ベース部と前記端面との間に広がるエッジ面が形成されている、ワイヤボンドと、
第1の面と、該第1の面から離れた位置にある第2の面とを有する誘電性封止層であって、前記第1の面の少なくとも一部分は前記パッケージの取付面において露出しており、該誘電性封止層は、該封止層により前記ワイヤボンドが互いに間隔を置いて配置されたものとなるように前記ワイヤボンド間の空間を満たしており、前記ワイヤボンドの封止されていない部分は、前記封止層の第2の面において該封止層により覆われていない、前記ワイヤボンドの前記端面の少なくとも一部分である、誘電性封止層と
を備えた超小型電子パッケージ。 - 前記ワイヤボンドの封止されていない部分のうちの少なくともいくつかは、前記ワイヤボンドの各々のベース部から少なくとも1つの横の方向に変位したものである、請求項22に記載の超小型電子パッケージ。
- 第2の超小型電子素子を更に備え、
前記第1の超小型電子素子は、前記誘電性層の前記第1の面を向くように位置する、該第1の超小型電子素子の前面において露出したコンタクトを有するものであり、
前記第2の超小型電子素子は、前記誘電性層の前記第2の面を向くように位置する、該第2の超小型電子素子の前面において露出したコンタクトを有するものである、請求項22に記載の超小型電子パッケージ。 - 前記封止層の前記第2の面において露出した第2の導電性要素を更に備え、
前記第2の導電性要素の少なくともいくつかは、前記第2の超小型電子素子の前記コンタクトの各々と、前記ワイヤボンドの封止されていない部分の各々との間で接続されている、請求項22に記載の超小型電子パッケージ。 - 前記第1の超小型電子素子と前記第2の超小型電子素子とは、少なくとも1つのワイヤボンドにより電気的に接続されており、
該ワイヤボンドは、前記第1の超小型電子素子の少なくとも1つのコンタクトと、前記第2の超小型電子素子の少なくとも1つのコンタクトとに電気的に接続されている、請求項25に記載の超小型電子パッケージ。 - 前記第2の超小型電子素子は、該第2の超小型電子素子の前記コンタクトのうちの1つと、該第2の超小型電子素子の各々との間で接合されたワイヤボンドにより、前記第2の導電性要素のうちの1つと接続されている、請求項25に記載の超小型電子パッケージ。
- 前記第1の超小型電子素子と前記第2の超小型電子素子とは、前記第2の超小型電子素子のコンタクトと、前記封止層の前記第1の面において露出した前記導電性要素の各々とに接合されたワイヤボンドにより電気的に接続されている、請求項22に記載の超小型電子パッケージ。
- 請求項20に記載の第1の超小型電子パッケージと、
超小型電子素子と、第2の超小型電子パッケージの面において露出し、前記超小型電子素子と電気的に接続された端子とを有する第2の超小型電子パッケージと
を備え、
前記第2の超小型電子パッケージは、前記第1の超小型電子パッケージの上に設けられており、
前記第2の超小型電子パッケージは、前記第1の超小型電子パッケージのワイヤボンドの封止されていない部分のうちの少なくともいくつかに電気的に接続された、前記第1の超小型電子パッケージの端子により前記第1の超小型電子パッケージとボンディングされている、超小型電子アセンブリ。 - 請求項22に記載の超小型電子パッケージと、1以上の電子的構成要素とを備えたシステム。
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US20130313716A1 (en) | 2013-11-28 |
US20160163639A1 (en) | 2016-06-09 |
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CN104520987B (zh) | 2017-08-11 |
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TWI560788B (en) | 2016-12-01 |
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EP2852974A1 (en) | 2015-04-01 |
WO2013177134A1 (en) | 2013-11-28 |
US8835228B2 (en) | 2014-09-16 |
US20190096803A1 (en) | 2019-03-28 |
US10170412B2 (en) | 2019-01-01 |
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