JP2014078645A5 - - Google Patents

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Publication number
JP2014078645A5
JP2014078645A5 JP2012226439A JP2012226439A JP2014078645A5 JP 2014078645 A5 JP2014078645 A5 JP 2014078645A5 JP 2012226439 A JP2012226439 A JP 2012226439A JP 2012226439 A JP2012226439 A JP 2012226439A JP 2014078645 A5 JP2014078645 A5 JP 2014078645A5
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JP
Japan
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tft element
confirmed
operating characteristics
vsec
examining
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JP2012226439A
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English (en)
Japanese (ja)
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JP5966840B2 (ja
JP2014078645A (ja
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Priority claimed from JP2012226439A external-priority patent/JP5966840B2/ja
Priority to JP2012226439A priority Critical patent/JP5966840B2/ja
Priority to PCT/JP2013/077610 priority patent/WO2014058019A1/ja
Priority to US14/434,939 priority patent/US9299791B2/en
Priority to KR1020157007278A priority patent/KR102062280B1/ko
Priority to CN201380049309.3A priority patent/CN104685634B/zh
Priority to TW102136713A priority patent/TWI595668B/zh
Publication of JP2014078645A publication Critical patent/JP2014078645A/ja
Publication of JP2014078645A5 publication Critical patent/JP2014078645A5/ja
Publication of JP5966840B2 publication Critical patent/JP5966840B2/ja
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Expired - Fee Related legal-status Critical Current
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JP2012226439A 2012-10-11 2012-10-11 酸化物半導体薄膜および薄膜トランジスタ Expired - Fee Related JP5966840B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012226439A JP5966840B2 (ja) 2012-10-11 2012-10-11 酸化物半導体薄膜および薄膜トランジスタ
CN201380049309.3A CN104685634B (zh) 2012-10-11 2013-10-10 氧化物半导体薄膜以及薄膜晶体管
US14/434,939 US9299791B2 (en) 2012-10-11 2013-10-10 Oxide semiconductor thin film and thin film transistor
KR1020157007278A KR102062280B1 (ko) 2012-10-11 2013-10-10 산화물 반도체 박막 및 박막 트랜지스터
PCT/JP2013/077610 WO2014058019A1 (ja) 2012-10-11 2013-10-10 酸化物半導体薄膜および薄膜トランジスタ
TW102136713A TWI595668B (zh) 2012-10-11 2013-10-11 氧化物半導體薄膜及薄膜電晶體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012226439A JP5966840B2 (ja) 2012-10-11 2012-10-11 酸化物半導体薄膜および薄膜トランジスタ

Publications (3)

Publication Number Publication Date
JP2014078645A JP2014078645A (ja) 2014-05-01
JP2014078645A5 true JP2014078645A5 (https=) 2015-10-08
JP5966840B2 JP5966840B2 (ja) 2016-08-10

Family

ID=50477485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012226439A Expired - Fee Related JP5966840B2 (ja) 2012-10-11 2012-10-11 酸化物半導体薄膜および薄膜トランジスタ

Country Status (6)

Country Link
US (1) US9299791B2 (https=)
JP (1) JP5966840B2 (https=)
KR (1) KR102062280B1 (https=)
CN (1) CN104685634B (https=)
TW (1) TWI595668B (https=)
WO (1) WO2014058019A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6119773B2 (ja) 2014-03-25 2017-04-26 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
US20160251264A1 (en) * 2014-08-12 2016-09-01 Sumitomo Electric Industries, Ltd. Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device
JP6357664B2 (ja) * 2014-09-22 2018-07-18 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
JP6501385B2 (ja) * 2014-10-22 2019-04-17 日本放送協会 薄膜トランジスタおよびその製造方法
US10087517B2 (en) 2014-10-22 2018-10-02 Sumitomo Electric Industries, Ltd. Oxide sintered body and semiconductor device
JP2016111125A (ja) * 2014-12-04 2016-06-20 日本放送協会 薄膜トランジスタおよびその製造方法
EP3101692A1 (en) * 2015-01-26 2016-12-07 Sumitomo Electric Industries, Ltd. Oxide semiconductor film and semiconductor device
KR101853575B1 (ko) 2015-02-13 2018-04-30 스미토모덴키고교가부시키가이샤 산화물 소결체와 그 제조 방법, 스퍼터 타겟, 및 반도체 디바이스
JP6394518B2 (ja) * 2015-07-02 2018-09-26 住友電気工業株式会社 半導体デバイスおよびその製造方法
CN107924822B (zh) * 2015-07-30 2022-10-28 出光兴产株式会社 晶体氧化物半导体薄膜、晶体氧化物半导体薄膜的制造方法以及薄膜晶体管
JP6308191B2 (ja) * 2015-09-16 2018-04-11 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
JP6350466B2 (ja) * 2015-09-16 2018-07-04 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
JP6593257B2 (ja) * 2016-06-13 2019-10-23 住友電気工業株式会社 半導体デバイスおよびその製造方法
WO2018211724A1 (ja) * 2017-05-16 2018-11-22 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、酸化物半導体膜、ならびに半導体デバイスの製造方法
JP6493601B2 (ja) * 2018-05-31 2019-04-03 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
US11569250B2 (en) 2020-06-29 2023-01-31 Taiwan Semiconductor Manufacturing Company Limited Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
JPWO2023063348A1 (https=) * 2021-10-14 2023-04-20
CN119498029A (zh) * 2022-08-25 2025-02-21 株式会社日本显示器 氧化物半导体膜、薄膜晶体管及电子设备
US20250253150A1 (en) * 2024-02-06 2025-08-07 POSTECH Research and Business Development Foundation Method of preparing tellurium oxide thin film and thin film transistor using sputtering

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Publication number Priority date Publication date Assignee Title
TWI254080B (en) * 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
KR20070116888A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP4662075B2 (ja) 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
JP5466939B2 (ja) * 2007-03-23 2014-04-09 出光興産株式会社 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2010045263A (ja) * 2008-08-15 2010-02-25 Idemitsu Kosan Co Ltd 酸化物半導体、スパッタリングターゲット、及び薄膜トランジスタ
US8445903B2 (en) 2008-10-23 2013-05-21 Idemitsu Kosan Co., Ltd. Thin film transistor having a crystalline semiconductor film including indium oxide which contains a hydrogen element and method for manufacturing same
JP2010106291A (ja) * 2008-10-28 2010-05-13 Idemitsu Kosan Co Ltd 酸化物半導体及びその製造方法
JP5553997B2 (ja) 2009-02-06 2014-07-23 古河電気工業株式会社 トランジスタおよびその製造方法
EP2421048A4 (en) 2009-04-17 2012-08-29 Bridgestone Corp THIN-LAYER TRANSISTOR AND METHOD FOR PRODUCING A THIN-LAYER TRANSISTOR
JP2010251604A (ja) 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタの製造方法
JP2010251606A (ja) * 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタ
KR101035357B1 (ko) * 2009-12-15 2011-05-20 삼성모바일디스플레이주식회사 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자
JP5437825B2 (ja) 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
WO2012105323A1 (ja) * 2011-02-04 2012-08-09 住友金属鉱山株式会社 酸化物焼結体およびそれを加工したタブレット

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