EP3314667A4 - Low damage self-aligned amphoteric finfet tip doping - Google Patents
Low damage self-aligned amphoteric finfet tip doping Download PDFInfo
- Publication number
- EP3314667A4 EP3314667A4 EP15897305.7A EP15897305A EP3314667A4 EP 3314667 A4 EP3314667 A4 EP 3314667A4 EP 15897305 A EP15897305 A EP 15897305A EP 3314667 A4 EP3314667 A4 EP 3314667A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- finfet
- amphoteric
- aligned
- low damage
- damage self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2258—Diffusion into or out of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2015/038197 WO2017003414A1 (en) | 2015-06-27 | 2015-06-27 | Low damage self-aligned amphoteric finfet tip doping |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3314667A1 EP3314667A1 (en) | 2018-05-02 |
EP3314667A4 true EP3314667A4 (en) | 2019-02-27 |
Family
ID=57608917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP15897305.7A Withdrawn EP3314667A4 (en) | 2015-06-27 | 2015-06-27 | Low damage self-aligned amphoteric finfet tip doping |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP3314667A4 (en) |
KR (1) | KR102352659B1 (en) |
CN (1) | CN107636838B (en) |
TW (1) | TWI706567B (en) |
WO (1) | WO2017003414A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019089050A1 (en) * | 2017-11-06 | 2019-05-09 | Intel Corporation | Reducing band-to-band tunneling in semiconductor devices |
WO2019125361A1 (en) * | 2017-12-18 | 2019-06-27 | Intel Corporation | Switching device with pocket having high mobility carriers |
CN110970300B (en) * | 2018-09-29 | 2023-09-22 | 中芯国际集成电路制造(上海)有限公司 | Stacked gate-all-around fin field effect transistor and forming method thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4035205A (en) * | 1974-12-24 | 1977-07-12 | U.S. Philips Corporation | Amphoteric heterojunction |
EP0565054A2 (en) * | 1992-04-09 | 1993-10-13 | Hughes Aircraft Company | N-type antimony-based strained layer superlattice and fabrication method |
US20100163926A1 (en) * | 2008-12-29 | 2010-07-01 | Hudait Mantu K | Modulation-doped multi-gate devices |
US20140264446A1 (en) * | 2013-03-13 | 2014-09-18 | International Business Machines Corporation | Iii-v finfets on silicon substrate |
US20140332900A1 (en) * | 2013-05-08 | 2014-11-13 | International Business Machines Corporation | Low extension resistance iii-v compound fin field effect transistor |
US20140353574A1 (en) * | 2012-05-17 | 2014-12-04 | The Board Of Trustees Of The University Of Illinois | Field effect transistor structure comprising a stack of vertically separated channel nanowires |
WO2014209390A1 (en) * | 2013-06-28 | 2014-12-31 | Intel Corporation | Selective epitaxially grown iii-v materials based devices |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8264032B2 (en) * | 2009-09-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
US20120161105A1 (en) * | 2010-12-22 | 2012-06-28 | Willy Rachmady | Uniaxially strained quantum well device and method of making same |
US8900973B2 (en) * | 2011-08-30 | 2014-12-02 | International Business Machines Corporation | Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion |
US8896066B2 (en) * | 2011-12-20 | 2014-11-25 | Intel Corporation | Tin doped III-V material contacts |
KR101891458B1 (en) * | 2011-12-20 | 2018-08-24 | 인텔 코포레이션 | Semiconductor device having iii-v semiconductor material layer |
US8629038B2 (en) * | 2012-01-05 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs with vertical fins and methods for forming the same |
US8889541B1 (en) * | 2013-05-07 | 2014-11-18 | International Business Machines Corporation | Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer |
US9178045B2 (en) * | 2013-09-27 | 2015-11-03 | Samsung Electronics Co., Ltd. | Integrated circuit devices including FinFETS and methods of forming the same |
-
2015
- 2015-06-27 WO PCT/US2015/038197 patent/WO2017003414A1/en active Application Filing
- 2015-06-27 KR KR1020187002563A patent/KR102352659B1/en active IP Right Grant
- 2015-06-27 EP EP15897305.7A patent/EP3314667A4/en not_active Withdrawn
- 2015-06-27 CN CN201580080418.0A patent/CN107636838B/en active Active
-
2016
- 2016-05-25 TW TW105116289A patent/TWI706567B/en active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4035205A (en) * | 1974-12-24 | 1977-07-12 | U.S. Philips Corporation | Amphoteric heterojunction |
EP0565054A2 (en) * | 1992-04-09 | 1993-10-13 | Hughes Aircraft Company | N-type antimony-based strained layer superlattice and fabrication method |
US20100163926A1 (en) * | 2008-12-29 | 2010-07-01 | Hudait Mantu K | Modulation-doped multi-gate devices |
US20140353574A1 (en) * | 2012-05-17 | 2014-12-04 | The Board Of Trustees Of The University Of Illinois | Field effect transistor structure comprising a stack of vertically separated channel nanowires |
US20140264446A1 (en) * | 2013-03-13 | 2014-09-18 | International Business Machines Corporation | Iii-v finfets on silicon substrate |
US20140332900A1 (en) * | 2013-05-08 | 2014-11-13 | International Business Machines Corporation | Low extension resistance iii-v compound fin field effect transistor |
WO2014209390A1 (en) * | 2013-06-28 | 2014-12-31 | Intel Corporation | Selective epitaxially grown iii-v materials based devices |
Non-Patent Citations (1)
Title |
---|
SCHUBERT, E. FRED: "Doping in III-V semiconductors", 1993, CAMBRIDGE UNIVERSITY PRESS, ISBN: 0 521 41919 0, pages: 181 - 207, XP002787962 * |
Also Published As
Publication number | Publication date |
---|---|
TW201711204A (en) | 2017-03-16 |
KR20180021157A (en) | 2018-02-28 |
CN107636838B (en) | 2022-01-14 |
WO2017003414A1 (en) | 2017-01-05 |
KR102352659B1 (en) | 2022-01-18 |
TWI706567B (en) | 2020-10-01 |
EP3314667A1 (en) | 2018-05-02 |
CN107636838A (en) | 2018-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3273267A4 (en) | Lidar device | |
EP2940110B8 (en) | Low speed pre-ignition | |
EP3337502A4 (en) | Stable anti-ifnar1 formulation | |
EP3198651A4 (en) | Scaled tfet transistor formed using nanowire with surface termination | |
EP3076994A4 (en) | Targeted adaptive vaccines | |
EP3309860A4 (en) | Power storage device | |
EP2974768A4 (en) | Micro-needle patch | |
EP3352242A4 (en) | Power storage device | |
EP3369144A4 (en) | Power connector | |
EP3297374A4 (en) | Terminal device | |
EP3200312A4 (en) | Battery device | |
EP3306762A4 (en) | Sparkplug | |
EP3258527A4 (en) | Power storage device | |
EP3378133A4 (en) | Device connectors | |
EP3145549A4 (en) | Topical formulations and uses thereof | |
EP3065729A4 (en) | Novel formulations | |
EP3431722A4 (en) | Cogeneration device | |
EP3272001A4 (en) | Inductive power harvester with power limiting capability | |
EP3080844A4 (en) | Forming silicide and contact at embedded epitaxial facet | |
EP3236520A4 (en) | Negative-electrode active material for electrical device, and electrical device using same | |
EP3314667A4 (en) | Low damage self-aligned amphoteric finfet tip doping | |
EP3185618A4 (en) | Wireless terminal | |
EP3213618A4 (en) | Inversely positionable mower structure | |
EP3119392A4 (en) | Ocular formulations | |
EP3383912A4 (en) | Topical formulations |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20171122 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20190130 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/78 20060101AFI20190118BHEP Ipc: H01L 21/8238 20060101ALI20190118BHEP Ipc: H01L 21/336 20060101ALI20190118BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20210129 |