JP2014067958A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 229920005591 polysilicon Polymers 0.000 description 20
- 239000007772 electrode material Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 15
- 239000007769 metal material Substances 0.000 description 13
- 230000005684 electric field Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
Abstract
【解決手段】本実施形態によれば、半導体装置は、基板上にゲート絶縁膜を介して形成されたゲート電極と、前記基板内に前記ゲート電極を挟むように形成された、第1導電型のソース領域、及び前記第1導電型とは逆導電型の第2導電型のドレイン領域と、を備える。前記ゲート電極内の前記ソース領域側の第1領域の仕事関数が、前記ゲート電極内の前記ドレイン領域側の第2領域の仕事関数よりも前記第1導電型の方向へシフトしている。
【選択図】図1
Description
102 ゲート絶縁膜
102A 高誘電率ゲート絶縁膜
104 ソース領域
104a ソースエクステンション領域
106 ドレイン領域
110 ゲート電極
120 第1側壁絶縁膜
122 第2側壁絶縁膜
130 素子分離領域
Claims (10)
- 基板上にゲート絶縁膜を介して形成されたゲート電極と、
前記基板内に前記ゲート電極を挟むように形成された、第1導電型のソース領域、及び前記第1導電型とは逆導電型の第2導電型のドレイン領域と、
を備え、
前記ゲート電極内の前記ソース領域側の第1領域の仕事関数が、前記ゲート電極内の前記ドレイン領域側の第2領域の仕事関数よりも前記第1導電型の方向へシフトしており、
前記ゲート絶縁膜は高誘電率ゲート絶縁膜であり、
前記第1領域側の前記ゲート絶縁膜の酸素濃度が、前記第2領域側の前記ゲート絶縁膜の酸素濃度より高く、
前記ゲート電極の下方に位置する前記基板の表面部は、シリコンと比較して、価電子帯上端が高エネルギー側にシフトしていることを特徴とする半導体装置。 - 基板上にゲート絶縁膜を介して形成されたゲート電極と、
前記基板内に前記ゲート電極を挟むように形成された、第1導電型のソース領域、及び前記第1導電型とは逆導電型の第2導電型のドレイン領域と、
を備え、
前記ゲート電極内の前記ソース領域側の第1領域の仕事関数が、前記ゲート電極内の前記ドレイン領域側の第2領域の仕事関数よりも前記第1導電型の方向へシフトしていることを特徴とする半導体装置。 - 前記ゲート絶縁膜は高誘電率ゲート絶縁膜であり、
前記第1領域側の前記ゲート絶縁膜の酸素濃度が、前記第2領域側の前記ゲート絶縁膜の酸素濃度より高いことを特徴とする請求項2に記載の半導体装置。 - 前記第1領域は、前記ゲート絶縁膜と接触する第1金属膜を有し、
前記第2領域は、前記ゲート絶縁膜と接触する、前記第1金属膜とは異なる第2金属膜を有することを特徴とする請求項2に記載の半導体装置。 - 前記ゲート電極の前記第1領域は前記第1導電型の不純物を含み、
前記ゲート電極の前記第2領域は前記第2導電型の不純物を含むことを特徴とする請求項2に記載の半導体装置。 - 前記ゲート電極の下方に位置する前記基板の表面部は、シリコンと比較して、価電子帯上端が高エネルギー側にシフトしていることを特徴とする請求項2乃至5のいずれかに記載の半導体装置。
- 基板上にゲート絶縁膜を介して形成されたゲート電極と、
前記基板内に前記ゲート電極を挟むように形成されたN型のソース領域及びP型のドレイン領域と、
を備え、
前記ゲート電極の仕事関数は5.0eV以下であることを特徴とする半導体装置。 - 基板上にゲート絶縁膜を介してゲート電極を形成する工程と、
前記基板内に前記ゲート電極を挟むように、第1導電型のソース領域、及び前記第1導電型とは逆導電型の第2導電型のドレイン領域を形成する工程と、
前記ゲート電極内の前記ソース領域側の第1領域の仕事関数を、前記ゲート電極内の前記ドレイン領域側の第2領域の仕事関数よりも前記第1導電型の方向へシフトさせる工程と、
を備える半導体装置の製造方法。 - 前記ゲート絶縁膜は高誘電率ゲート絶縁膜であり、
前記第2領域側の前記ゲート電極及び前記ゲート絶縁膜をマスク材で覆いつつ、前記第1領域側から前記ゲート絶縁膜へ酸素を導入することで、前記第1領域の仕事関数を前記第2領域の仕事関数よりも前記第1導電型の方向へシフトさせることを特徴とする請求項8に記載の半導体装置の製造方法。 - 前記第1導電型の不純物を前記基板内に注入して前記ソース領域を形成する際に、前記第1導電型の不純物を前記ゲート電極の前記第1領域に注入し、前記第2導電型の不純物を前記基板内に注入して前記ドレイン領域を形成する際に、前記第2導電型の不純物を前記ゲート電極の前記第2領域に注入することで、前記第1領域の仕事関数を前記第2領域の仕事関数よりも前記第1導電型の方向へシフトさせることを特徴とする請求項8に記載の半導体装置の製造方法。
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EP3185301A1 (en) * | 2015-12-22 | 2017-06-28 | IMEC vzw | Multi-gate tunnel field-effect transistor (tfet) |
CN108140671A (zh) * | 2016-06-27 | 2018-06-08 | 华为技术有限公司 | 一种隧穿场效应晶体管及其制作方法 |
CN110034067B (zh) * | 2018-01-12 | 2021-01-05 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
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US20120139057A1 (en) * | 2010-12-07 | 2012-06-07 | Toshiba America Electronic Components, Inc. | Semiconductor device and method of fabricating the same |
JP2012211642A (ja) * | 2011-03-31 | 2012-11-01 | Keihin Corp | 弁装置のロック機構 |
JP2013069977A (ja) * | 2011-09-26 | 2013-04-18 | Toshiba Corp | 半導体装置の製造方法 |
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JPH0541520A (ja) * | 1991-08-06 | 1993-02-19 | Nec Corp | 半導体装置 |
JPH11220122A (ja) * | 1998-01-29 | 1999-08-10 | Sony Corp | 半導体装置の製造方法 |
JP2011100967A (ja) * | 2009-07-21 | 2011-05-19 | Rohm Co Ltd | 半導体装置 |
US20120223387A1 (en) * | 2011-03-01 | 2012-09-06 | Tsinghua University | Tunneling device and method for forming the same |
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