JP2014017292A5 - - Google Patents
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- Publication number
- JP2014017292A5 JP2014017292A5 JP2012152005A JP2012152005A JP2014017292A5 JP 2014017292 A5 JP2014017292 A5 JP 2014017292A5 JP 2012152005 A JP2012152005 A JP 2012152005A JP 2012152005 A JP2012152005 A JP 2012152005A JP 2014017292 A5 JP2014017292 A5 JP 2014017292A5
- Authority
- JP
- Japan
- Prior art keywords
- sample
- plasma
- ring
- wafer
- shaped member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims description 18
- 238000003672 processing method Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 239000003989 dielectric material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012152005A JP5970268B2 (ja) | 2012-07-06 | 2012-07-06 | プラズマ処理装置および処理方法 |
| KR1020120081226A KR101343967B1 (ko) | 2012-07-06 | 2012-07-25 | 플라즈마 처리 장치 및 처리 방법 |
| TW101128230A TWI553691B (zh) | 2012-07-06 | 2012-08-06 | 電漿處理裝置及電漿處理方法 |
| US13/590,242 US20140011365A1 (en) | 2012-07-06 | 2012-08-21 | Plasma processing apparatus and method |
| US16/218,703 US11152192B2 (en) | 2012-07-06 | 2018-12-13 | Plasma processing apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012152005A JP5970268B2 (ja) | 2012-07-06 | 2012-07-06 | プラズマ処理装置および処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014017292A JP2014017292A (ja) | 2014-01-30 |
| JP2014017292A5 true JP2014017292A5 (enExample) | 2015-09-17 |
| JP5970268B2 JP5970268B2 (ja) | 2016-08-17 |
Family
ID=49878837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012152005A Active JP5970268B2 (ja) | 2012-07-06 | 2012-07-06 | プラズマ処理装置および処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20140011365A1 (enExample) |
| JP (1) | JP5970268B2 (enExample) |
| KR (1) | KR101343967B1 (enExample) |
| TW (1) | TWI553691B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10237144B2 (en) * | 2012-10-29 | 2019-03-19 | T-Mobile Usa, Inc. | Quality of user experience analysis |
| US10854492B2 (en) * | 2015-08-18 | 2020-12-01 | Lam Research Corporation | Edge ring assembly for improving feature profile tilting at extreme edge of wafer |
| CN106558522B (zh) * | 2015-09-25 | 2021-01-29 | 北京北方华创微电子装备有限公司 | 卡盘及承载装置 |
| KR102421625B1 (ko) * | 2017-06-27 | 2022-07-19 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
| JP7033441B2 (ja) * | 2017-12-01 | 2022-03-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7140610B2 (ja) * | 2018-09-06 | 2022-09-21 | 株式会社日立ハイテク | プラズマ処理装置 |
| WO2020100357A1 (ja) * | 2019-08-05 | 2020-05-22 | 株式会社日立ハイテク | プラズマ処理装置 |
| US20210249232A1 (en) * | 2020-02-10 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for etching |
| CN115668438A (zh) * | 2020-03-27 | 2023-01-31 | 朗姆研究公司 | 用于处理具有缺口的晶片的等离子体排除区域环 |
| US11404250B2 (en) * | 2020-07-08 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma etcher edge ring with a chamfer geometry and impedance design |
| CN114695041B (zh) * | 2020-12-25 | 2025-04-08 | 中微半导体设备(上海)股份有限公司 | 一种等离子体反应器 |
| WO2022185453A1 (ja) * | 2021-03-03 | 2022-09-09 | 三菱電機株式会社 | 炭化ケイ素エピタキシャル成長装置および炭化ケイ素エピタキシャル基板の製造方法 |
| KR20250126086A (ko) * | 2022-12-20 | 2025-08-22 | 램 리써치 코포레이션 | 기판 노치 근방의 플라즈마 증착 또는 에칭을 제어하기 위한 하부 플라즈마 배제 구역 (plasma exclusion zone) 링 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942039A (en) * | 1997-05-01 | 1999-08-24 | Applied Materials, Inc. | Self-cleaning focus ring |
| US5900064A (en) * | 1997-05-01 | 1999-05-04 | Applied Materials, Inc. | Plasma process chamber |
| TW506234B (en) * | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
| JP3599670B2 (ja) * | 2001-01-12 | 2004-12-08 | 株式会社日立製作所 | プラズマ処理方法および装置 |
| JP3881290B2 (ja) * | 2002-08-20 | 2007-02-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| TW554465B (en) * | 2002-08-27 | 2003-09-21 | Winbond Electronics Corp | Apparatus for supporting wafer in semiconductor process |
| US20040040663A1 (en) * | 2002-08-29 | 2004-03-04 | Ryujiro Udo | Plasma processing apparatus |
| JP2005026001A (ja) * | 2003-06-30 | 2005-01-27 | Toshiba Lighting & Technology Corp | 埋込形標識灯装置 |
| TWI488236B (zh) * | 2003-09-05 | 2015-06-11 | Tokyo Electron Ltd | Focusing ring and plasma processing device |
| JP4640922B2 (ja) * | 2003-09-05 | 2011-03-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7658816B2 (en) * | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
| JP4584572B2 (ja) | 2003-12-22 | 2010-11-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および処理方法 |
| JP2005260011A (ja) | 2004-03-12 | 2005-09-22 | Hitachi High-Technologies Corp | ウエハ処理装置およびウエハ処理方法 |
| JP2005303099A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP5080810B2 (ja) * | 2004-11-02 | 2012-11-21 | パナソニック株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| JP4566789B2 (ja) * | 2005-03-07 | 2010-10-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
| KR20080029609A (ko) * | 2006-09-29 | 2008-04-03 | 주식회사 하이닉스반도체 | 식각프로파일 휘어짐 방지를 위한 플라즈마 식각 장치 |
| JP4988402B2 (ja) * | 2007-03-30 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US7837827B2 (en) * | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| US7758764B2 (en) * | 2007-06-28 | 2010-07-20 | Lam Research Corporation | Methods and apparatus for substrate processing |
| JP4594358B2 (ja) | 2007-08-13 | 2010-12-08 | 株式会社エフオーアイ | プラズマ処理装置 |
| KR101645043B1 (ko) * | 2007-10-31 | 2016-08-02 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법 |
| US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
| JP5371466B2 (ja) * | 2009-02-12 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP5227264B2 (ja) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置,プラズマ処理方法,プログラム |
| JP2011035026A (ja) * | 2009-07-30 | 2011-02-17 | Seiko Epson Corp | ドライエッチング装置、半導体装置の製造方法、制御リング |
| JP5450187B2 (ja) * | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP5654297B2 (ja) * | 2010-09-14 | 2015-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2012
- 2012-07-06 JP JP2012152005A patent/JP5970268B2/ja active Active
- 2012-07-25 KR KR1020120081226A patent/KR101343967B1/ko active Active
- 2012-08-06 TW TW101128230A patent/TWI553691B/zh active
- 2012-08-21 US US13/590,242 patent/US20140011365A1/en not_active Abandoned
-
2018
- 2018-12-13 US US16/218,703 patent/US11152192B2/en active Active
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