JP2014011224A - 半導体装置の製造方法 - Google Patents
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】半導体装置100の製造方法は以下の工程を有している。互いに対向する第1の主面16Aおよび第2の主面16Bを有する半導体基板16が準備される。半導体基板16が第1の主面16Aにおいて粘着テープ1に固定される。粘着テープ1に固定された半導体基板16が収容室31内に配置される。粘着テープ1の温度を100℃以上に保持しながら収容室31が排気される。収容室31を排気する工程の後に半導体基板16の温度が低減される。半導体基板16の温度を低減する工程の後に半導体基板16の第2の主面16B上に電極15が形成される。
【選択図】図1
Description
本実施の形態に係るMOSFET100の製造方法において、粘着テープ1に固定された中間半導体基板16が収容室31内に配置され、粘着テープ1の温度を100℃以上に保持しながら収容室31が排気される。言い換えれば、収容室31内の圧力が1気圧よりも小さくなる。これにより、粘着テープ1に含有または付着している水分が蒸発して水蒸気になり、当該水蒸気が収容室31から排気されることにより、中間半導体基板16周辺の水蒸気は除去される。そのため、当該水蒸気により中間半導体基板16上に形成されるドレイン電極15が酸化されることを抑制することができる。結果として、中間半導体基板16とドレイン電極15との接触抵抗を低減することができる。また、ドレイン電極15と裏面保護電極17との密着性を向上させることができる。
Claims (10)
- 互いに対向する第1の主面および第2の主面を有する半導体基板を準備する工程と、
前記半導体基板を前記第1の主面において粘着テープに固定する工程と、
前記粘着テープに固定された前記半導体基板を収容室内に配置する工程と、
前記粘着テープの温度を100℃以上に保持しながら前記収容室を排気する工程と、
前記収容室を排気する工程の後に前記半導体基板の温度を低減する工程と、
前記半導体基板の温度を低減する工程の後に前記半導体基板の前記第2の主面上に電極を形成する工程とを含む、半導体装置の製造方法。 - 前記収容室を排気する工程において、前記収容室のH2O分圧は5×10-4Pa以下まで低減される、請求項1に記載の半導体装置の製造方法。
- 前記収容室を排気する工程において、前記粘着テープの温度は120℃以上200℃以下に保持される、請求項1または2に記載の半導体装置の製造方法。
- 前記半導体装置は炭化珪素半導体装置である、請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- 前記電極を形成する工程は、前記半導体基板上に金属層を形成する工程と、前記金属層をアニールする工程とを含む、請求項1〜4のいずれか1項に記載の半導体装置の製造方法。
- 前記金属層を形成する工程において、前記収容室のH2O分圧は1×10-4Pa以下まで低減される、請求項5に記載の半導体装置の製造方法。
- 前記金属層を形成する工程は、スパッタリング法により行われる、請求項5または6に記載の半導体装置の製造方法。
- 前記金属層を形成する工程では、前記半導体基板を冷却しながら前記電極が形成される、請求項5〜7のいずれか1項に記載の半導体装置の製造方法。
- 前記金属層を形成する工程は、前記半導体基板が前記収容室と連結して設けられている成膜室へ搬送される工程と、前記成膜室において前記半導体基板上に前記金属層が形成される工程とを含む、請求項5〜8のいずれか1項に記載の半導体装置の製造方法。
- 前記金属層を形成する工程では、面内膜厚分布が6%未満である前記金属層が形成される、請求項5〜9のいずれか1項に記載の半導体装置の製造方法。
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JP2012145080A JP6011066B2 (ja) | 2012-06-28 | 2012-06-28 | 半導体装置の製造方法 |
CN201380028417.2A CN104350579A (zh) | 2012-06-28 | 2013-04-25 | 制造半导体器件的方法 |
PCT/JP2013/062215 WO2014002603A1 (ja) | 2012-06-28 | 2013-04-25 | 半導体装置の製造方法 |
EP13808514.7A EP2869330A4 (en) | 2012-06-28 | 2013-04-25 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
US13/890,893 US9543154B2 (en) | 2012-06-28 | 2013-05-09 | Method for manufacturing semiconductor device |
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Cited By (3)
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DE102015208967A1 (de) | 2014-06-23 | 2015-12-24 | Sumitomo Electric Industries, Ltd. | Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung |
KR20180022555A (ko) * | 2016-08-24 | 2018-03-06 | 가부시키가이샤 무라타 세이사쿠쇼 | 성막 장치 |
JPWO2018070263A1 (ja) * | 2016-10-13 | 2019-04-11 | 三菱電機株式会社 | 半導体装置の製造方法 |
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JP6799960B2 (ja) | 2016-07-25 | 2020-12-16 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
DE102016015475B3 (de) * | 2016-12-28 | 2018-01-11 | 3-5 Power Electronics GmbH | IGBT Halbleiterstruktur |
JP7296835B2 (ja) | 2019-09-19 | 2023-06-23 | 株式会社ディスコ | ウェーハの処理方法、及び、チップ測定装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003347260A (ja) * | 2002-05-22 | 2003-12-05 | Tokyo Electron Ltd | 処理装置及び基板処理方法 |
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JP2003347260A (ja) * | 2002-05-22 | 2003-12-05 | Tokyo Electron Ltd | 処理装置及び基板処理方法 |
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DE102015208967A1 (de) | 2014-06-23 | 2015-12-24 | Sumitomo Electric Industries, Ltd. | Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung |
JP2016009713A (ja) * | 2014-06-23 | 2016-01-18 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US9330916B2 (en) | 2014-06-23 | 2016-05-03 | Sumitomo Electric Industries, Ltd. | Method of manufacturing silicon carbide semiconductor device |
KR20180022555A (ko) * | 2016-08-24 | 2018-03-06 | 가부시키가이샤 무라타 세이사쿠쇼 | 성막 장치 |
KR102006174B1 (ko) * | 2016-08-24 | 2019-08-01 | 가부시키가이샤 무라타 세이사쿠쇼 | 성막 장치 |
JPWO2018070263A1 (ja) * | 2016-10-13 | 2019-04-11 | 三菱電機株式会社 | 半導体装置の製造方法 |
CN109791880A (zh) * | 2016-10-13 | 2019-05-21 | 三菱电机株式会社 | 半导体装置的制造方法 |
US10665459B2 (en) | 2016-10-13 | 2020-05-26 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
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US20140004696A1 (en) | 2014-01-02 |
CN104350579A (zh) | 2015-02-11 |
EP2869330A4 (en) | 2015-12-30 |
US9543154B2 (en) | 2017-01-10 |
JP6011066B2 (ja) | 2016-10-19 |
EP2869330A1 (en) | 2015-05-06 |
WO2014002603A1 (ja) | 2014-01-03 |
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