JP2013540676A - 同位体濃縮ホウ素含有化合物、およびその製造方法と使用方法 - Google Patents
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 222
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 213
- 150000001875 compounds Chemical class 0.000 title claims abstract description 162
- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000000126 substance Substances 0.000 claims abstract description 19
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 8
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 7
- -1 boron ions Chemical class 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 abstract description 49
- 238000003860 storage Methods 0.000 abstract description 18
- 238000009826 distribution Methods 0.000 abstract description 11
- 230000002194 synthesizing effect Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 55
- 241000894007 species Species 0.000 description 48
- 239000002019 doping agent Substances 0.000 description 39
- 239000002243 precursor Substances 0.000 description 39
- 239000007789 gas Substances 0.000 description 35
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 29
- 239000000203 mixture Substances 0.000 description 25
- 229910015900 BF3 Inorganic materials 0.000 description 15
- 238000002513 implantation Methods 0.000 description 9
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- 238000001308 synthesis method Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000002351 wastewater Substances 0.000 description 4
- 238000004065 wastewater treatment Methods 0.000 description 4
- 239000003463 adsorbent Substances 0.000 description 3
- 150000001639 boron compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 238000011049 filling Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002608 ionic liquid Substances 0.000 description 2
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- 239000011733 molybdenum Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
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- 239000013626 chemical specie Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- WUWOPJNIAKTBSJ-UHFFFAOYSA-N diboron tetrafluoride Chemical compound FB(F)B(F)F WUWOPJNIAKTBSJ-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 239000011737 fluorine Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
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- 230000003449 preventive effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
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- 238000001179 sorption measurement Methods 0.000 description 1
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- 238000002207 thermal evaporation Methods 0.000 description 1
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- 238000009834 vaporization Methods 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/06—Boron halogen compounds
- C01B35/061—Halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/88—Isotope composition differing from the natural occurrence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/133—Renewable energy sources, e.g. sunlight
Abstract
Description
本出願は、ロバート・ケイム(Robert Kaim)らの名義で「同位体濃縮ホウ素含有化合物、およびその製造方法と使用方法」として2011年3月15日に提出された米国特許出願第13/048,367号の優先権を主張する。該出願は、米国特許法第120条において、ロバート・ケイムらの名義で「同位体濃縮ホウ素含有化合物、およびその製造方法と使用方法」として2010年10月27日に提出された米国特許出願第12/913,721号の一部継続出願であり、米国特許法第119条(e)において、以下の米国特許仮出願の優先権の利益を主張している。該仮出願は、オレッグ・ビル(Oleg Byl)らの名義で「同位体濃縮ホウ素含有化合物、およびその製造方法と使用方法」として2010年8月30日に提出された米国特許仮出願第61/378,353号、オレッグ・ビルらの名義で「同位体濃縮ホウ素含有化合物、およびその製造方法と使用方法」として2010年8月18日に提出された米国特許仮出願第61/375,031号、エドワード・ジョーンズ(Edward Jones)らの名義で「イオン注入ガス運搬システムのための能動的冷却」として2010年6月25日に提出された米国特許仮出願第61/358,514号、エドワード・ジョーンズらの名義で「イオン注入ガス運搬システムのための能動的な冷却」として2010年5月27日に提出された米国特許仮出願第61/349,202号、およびロバート・ケイムらの名義で「ホウ素イオン注入装置および注入方法」として2009年10月27日に提出された米国特許仮出願第61/255,097号である。前述の米国特許出願第12/913,721号、米国特許仮出願第61/378,353号、および米国特許仮出願第61/375,031号の優先権も本願で主張されている。前述の全ての米国特許出願第13/048,367号、第12/913,721号および米国特許仮出願第61/378,353号、第61/375,031号、第61/358,514号、第61/349,202号、および第61/255,097号の全内容を、全ての目的のために本願に援用する。
本開示は、同位体濃縮ホウ素含有化合物、組成、並びにその製造方法及び使用方法に関する。
イオンの注入は、制御された量のドーパント不純物を正確に半導体ウェハに導入するために集積回路の製造において用いられ、マイクロ電子回路/半導体の製造において極めて重要な工程である。
〔発明の概要〕
Claims (20)
- 2つ以上のホウ素原子と、少なくとも1つのフッ素原子とを含むホウ素含有化合物であって、該化合物は、ホウ素同位体をその天然存在濃度あるいは天然存在割合よりも大きな濃度あるいは割合で含んでいることを特徴とする化合物。
- (i)原子量10のホウ素を19.9%よりも高い濃度で、あるいは(ii)原子量11のホウ素を80.1%よりも高い濃度で含んでいることを特徴とする、請求項1に記載の化合物。
- 原子量10のホウ素同位体の前記濃度が、19.9%,20%,25%,30%,35%,40%,45%,50%,55%,60%,65%,70%,80%,85%,90%,95%,96%,97%,98%,99%,99.9%および99.99%からなる群から選択された値よりも大きいことを特徴とする、請求項2に記載の化合物。
- 原子量10のホウ素同位体の前記濃度が、20〜25%,25〜30%,30〜35%,35〜40%,40〜45%,45〜50%,50〜55%,55〜60%,60〜65%,65〜70%,70〜75%,75〜80%,80〜85%,85〜90%,90〜95%,95〜99%および95〜99.9%からなる群から選択された範囲内であることを特徴とする、請求項2に記載の化合物。
- 原子量11のホウ素同位体の前記濃度が、80.1%,85%,90%,95%,96%,97%,98%,99%,99.9%および99.99%からなる群から選択された値よりも大きいことを特徴とする、請求項2に記載の化合物。
- 原子量11のホウ素同位体の前記濃度が、81〜85%,85〜90%,90〜95%,95〜99%,および95〜99.9%からなる群から選択された範囲内であることを特徴とする、請求項2に記載の化合物。
- 前記化合物が、2つのホウ素原子を含んでいることを特徴とする、請求項1に記載の化合物。
- 前記化合物が、化学式B2F4を有することを特徴とする、請求項1に記載の化合物。
- 11Bの10Bに対する割合が、4.1〜10,000の範囲となっていることを特徴とする、請求項1に記載の化合物。
- 2つ以上のホウ素原子と、少なくとも1つのフッ素原子とを含むホウ素含有化合物であって、ホウ素同位体をホウ素同位体の天然依存濃度あるいは天然存在割合より大きな濃度あるいは割合で含んでいる化合物をイオン化し、ホウ素イオンを生成するステップと、該ホウ素イオンを基板に注入するステップとを含むことを特徴とするホウ素を基板に注入する方法。
- 前記ホウ素含有化合物は、(i)原子量10のホウ素を19.9%よりも高い濃度で、あるいは(ii)原子量11のホウ素を80.1%よりも高い濃度で含んでいることを特徴とする、請求項10に記載の方法。
- 前記ホウ素含有化合物における原子量10のホウ素同位体の前記濃度は、19.9%,20%,25%,30%,35%,40%,45%,50%,55%,60%,65%,70%,80%,85%,90%,95%,96%,97%,98%,99%,99.9%,および99.99%からなる群から選択された値よりも大きいことを特徴とする、請求項11に記載の方法。
- 前記ホウ素含有化合物における原子量10のホウ素同位体の前記濃度は、20〜25%,25〜30%,30〜35%,35〜40%,40〜45%,45〜50%,50〜55%,55〜60%,60〜65%,65〜70%,70〜75%,75〜80%,80〜85%,85〜90%,90〜95%,95〜99%および95〜99.9%からなる群から選択された範囲内にあることを特徴とする、請求項11に記載の方法。
- 前記ホウ素含有化合物における原子量11のホウ素同位体の前記濃度は、80.1%,85%,90%,95%,96%,97%,98%,99%,99.9%および99.99%からなる群から選択された値よりも大きいことを特徴とする、請求項11に記載の方法。
- 前記ホウ素含有化合物における原子量11のホウ素同位体の前記濃度は、81〜85%,85〜90%,90〜95%,95〜99%,および95〜99.9%からなる群から選択された範囲内であることを特徴とする、請求項11に記載の方法。
- 前記ホウ素含有化合物が、2つのホウ素原子を含んでいることを特徴とする、請求項10に記載の方法。
- 前記ホウ素含有化合物が、化学式B2F4を有することを特徴とする、請求項10に記載の方法。
- 前記ホウ素含有化合物における、11Bの10Bに対する割合が4.1〜10,000の範囲となっていることを特徴とする、請求項10に記載の方法。
- 前記イオン化は、イオン化チャンバにおいて行われ、前記ホウ素含有化合物は導管を介して前記イオン化のためのイオン化チャンバに運搬され、該導管は導管の詰まりおよび/あるいは該導管における前記化合物の堆積を抑制するのに適した温度で維持されることを特徴とする、請求項10に記載の方法。
- 前記導管と前記イオン化チャンバとの少なくとも一方を、能動的に冷却するステップを更に含むことを特徴とする、請求項19に記載の方法。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61/375,031 | 2010-06-21 | ||
US37503110P | 2010-08-18 | 2010-08-18 | |
US37835310P | 2010-08-30 | 2010-08-30 | |
US61/378,353 | 2010-08-30 | ||
US12/913,721 | 2010-10-27 | ||
US12/913,721 US8138071B2 (en) | 2009-10-27 | 2010-10-27 | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US13/048,367 | 2011-03-15 | ||
US13/048,367 US8062965B2 (en) | 2009-10-27 | 2011-03-15 | Isotopically-enriched boron-containing compounds, and methods of making and using same |
PCT/US2011/047942 WO2012024310A2 (en) | 2010-08-18 | 2011-08-16 | Isotopically-enriched boron-containing compounds, and methods of making and using same |
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WO2016104684A1 (ja) * | 2014-12-26 | 2016-06-30 | 国立大学法人北海道大学 | ダイヤモンド半導体デバイス |
JP2016127088A (ja) * | 2014-12-26 | 2016-07-11 | 国立大学法人北海道大学 | ダイヤモンド半導体デバイス |
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CN103153858A (zh) | 2013-06-12 |
KR101747196B1 (ko) | 2017-06-14 |
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JP2016103629A (ja) | 2016-06-02 |
TWI513657B (zh) | 2015-12-21 |
CN103153858B (zh) | 2016-01-20 |
SG2014006068A (en) | 2014-03-28 |
KR101536832B1 (ko) | 2015-07-14 |
SG188215A1 (en) | 2013-04-30 |
WO2012024310A3 (en) | 2012-05-31 |
TW201609542A (zh) | 2016-03-16 |
TWI558664B (zh) | 2016-11-21 |
TW201219305A (en) | 2012-05-16 |
KR20130097758A (ko) | 2013-09-03 |
EP2606004A2 (en) | 2013-06-26 |
TW201442958A (zh) | 2014-11-16 |
EP2606004B1 (en) | 2015-09-23 |
US20110159671A1 (en) | 2011-06-30 |
EP2937314A1 (en) | 2015-10-28 |
US8062965B2 (en) | 2011-11-22 |
EP2606004A4 (en) | 2014-02-19 |
CN105645423A (zh) | 2016-06-08 |
WO2012024310A2 (en) | 2012-02-23 |
JP6204438B2 (ja) | 2017-09-27 |
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