JP2013534542A - 自己組織化可能な重合体及びリソグラフィにおける使用方法 - Google Patents

自己組織化可能な重合体及びリソグラフィにおける使用方法 Download PDF

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JP2013534542A
JP2013534542A JP2013512801A JP2013512801A JP2013534542A JP 2013534542 A JP2013534542 A JP 2013534542A JP 2013512801 A JP2013512801 A JP 2013512801A JP 2013512801 A JP2013512801 A JP 2013512801A JP 2013534542 A JP2013534542 A JP 2013534542A
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polymer
molecular structure
molecular
monomer
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JP2013534542A5 (enExample
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ピータース，エミール
ウイスター，サンダー
コール，ロエロフ
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エーエスエムエル ネザーランズ ビー．ブイ．
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
    • C08F297/04—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type polymerising vinyl aromatic monomers and conjugated dienes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Graft Or Block Polymers (AREA)
JP2013512801A 2010-06-04 2011-04-20 自己組織化可能な重合体及びリソグラフィにおける使用方法 Pending JP2013534542A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35169310P 2010-06-04 2010-06-04
US61/351,693 2010-06-04
PCT/EP2011/056308 WO2011151109A1 (en) 2010-06-04 2011-04-20 Self-assemblable polymer and method for use in lithography

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JP2013534542A true JP2013534542A (ja) 2013-09-05
JP2013534542A5 JP2013534542A5 (enExample) 2014-06-05

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US (1) US8921032B2 (enExample)
JP (1) JP2013534542A (enExample)
KR (1) KR101826774B1 (enExample)
CN (1) CN102933628A (enExample)
NL (1) NL2006639A (enExample)
WO (1) WO2011151109A1 (enExample)

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JP2016107206A (ja) * 2014-12-05 2016-06-20 東京応化工業株式会社 下地剤及び相分離構造を含む構造体の製造方法
JP2018509759A (ja) * 2015-02-19 2018-04-05 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ ブロック・コポリマの誘導自己組織化のためのハイブリッド形態学的化学的プレパターン

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US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US7989307B2 (en) 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US9330934B2 (en) * 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9177794B2 (en) * 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US9169383B2 (en) 2012-02-10 2015-10-27 E I Du Pont De Nemours And Company Preparation, purification and use of high-X diblock copolymers
WO2013120052A1 (en) 2012-02-10 2013-08-15 E. I. Du Pont De Nemours And Company Preparation, purification and use of high-x diblock copolymers
JP2015507065A (ja) * 2012-02-10 2015-03-05 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 高度ｘジブロックコポリマーの製造、精製及び使用
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
JP6112314B2 (ja) 2012-07-10 2017-04-12 株式会社ニコン マーク形成方法及びデバイス製造方法
JP5881565B2 (ja) * 2012-09-07 2016-03-09 東京エレクトロン株式会社 基板処理方法、プログラム及びコンピュータ記憶媒体
WO2014124795A1 (en) * 2013-02-14 2014-08-21 Asml Netherlands B.V. Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers
JP6263378B2 (ja) * 2013-02-20 2018-01-17 東京応化工業株式会社 下地剤及びパターン形成方法
TWI672788B (zh) * 2013-03-27 2019-09-21 日商尼康股份有限公司 標記形成方法、標記檢測方法、及元件製造方法
US9385026B2 (en) 2014-05-08 2016-07-05 GlobalFoundries, Inc. Sublithographic Kelvin structure patterned with DSA
US9815947B2 (en) 2015-10-30 2017-11-14 E I Du Pont De Nemours And Company Substantially symmetrical 3-arm star block copolymers

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JPH05165142A (ja) * 1991-12-19 1993-06-29 Seiko Epson Corp 感光体
JP2003176285A (ja) * 2001-09-21 2003-06-24 Korea Res Inst Of Chem Technol ビニル基含有ジアリールエテン単量体及びこれを利用して製造したフォトクロミック高分子
JP2006110434A (ja) * 2004-10-13 2006-04-27 Toshiba Corp パターン形成方法およびそれを用いた構造体の加工方法
WO2007055371A1 (ja) * 2005-11-14 2007-05-18 Tokyo Institute Of Technology ナノポーラス基板の製造方法
JP2007208255A (ja) * 2006-02-02 2007-08-16 Internatl Business Mach Corp <Ibm> ブロック・コポリマーの改良型自己組織化パターン形成方法
JP2007242188A (ja) * 2006-03-10 2007-09-20 Ricoh Co Ltd 構造体とそれを用いた光記録媒体
JP2008055579A (ja) * 2006-09-01 2008-03-13 Lintec Corp ミクロ相分離構造物の製造方法
JP2009260330A (ja) * 2008-03-26 2009-11-05 Dainippon Printing Co Ltd パターン形成方法

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JPH05165142A (ja) * 1991-12-19 1993-06-29 Seiko Epson Corp 感光体
JP2003176285A (ja) * 2001-09-21 2003-06-24 Korea Res Inst Of Chem Technol ビニル基含有ジアリールエテン単量体及びこれを利用して製造したフォトクロミック高分子
JP2006110434A (ja) * 2004-10-13 2006-04-27 Toshiba Corp パターン形成方法およびそれを用いた構造体の加工方法
WO2007055371A1 (ja) * 2005-11-14 2007-05-18 Tokyo Institute Of Technology ナノポーラス基板の製造方法
JP2007208255A (ja) * 2006-02-02 2007-08-16 Internatl Business Mach Corp <Ibm> ブロック・コポリマーの改良型自己組織化パターン形成方法
JP2007242188A (ja) * 2006-03-10 2007-09-20 Ricoh Co Ltd 構造体とそれを用いた光記録媒体
JP2008055579A (ja) * 2006-09-01 2008-03-13 Lintec Corp ミクロ相分離構造物の製造方法
JP2009260330A (ja) * 2008-03-26 2009-11-05 Dainippon Printing Co Ltd パターン形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016107206A (ja) * 2014-12-05 2016-06-20 東京応化工業株式会社 下地剤及び相分離構造を含む構造体の製造方法
JP2018509759A (ja) * 2015-02-19 2018-04-05 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ ブロック・コポリマの誘導自己組織化のためのハイブリッド形態学的化学的プレパターン

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Publication number Publication date
US8921032B2 (en) 2014-12-30
WO2011151109A1 (en) 2011-12-08
KR101826774B1 (ko) 2018-02-07
CN102933628A (zh) 2013-02-13
NL2006639A (en) 2011-12-06
US20130078574A1 (en) 2013-03-28
KR20130110145A (ko) 2013-10-08

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