NL2006639A - Self-assemblable polymer and method for use in lithography. - Google Patents
Self-assemblable polymer and method for use in lithography. Download PDFInfo
- Publication number
- NL2006639A NL2006639A NL2006639A NL2006639A NL2006639A NL 2006639 A NL2006639 A NL 2006639A NL 2006639 A NL2006639 A NL 2006639A NL 2006639 A NL2006639 A NL 2006639A NL 2006639 A NL2006639 A NL 2006639A
- Authority
- NL
- Netherlands
- Prior art keywords
- self
- polymer
- molecular configuration
- molecular
- assemblable
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title claims description 18
- 229920000642 polymer Polymers 0.000 title abstract description 214
- 238000000034 method Methods 0.000 title abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 230000005855 radiation Effects 0.000 claims description 18
- 238000000059 patterning Methods 0.000 claims description 16
- 230000007547 defect Effects 0.000 abstract description 40
- 230000007704 transition Effects 0.000 abstract description 23
- 238000000137 annealing Methods 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 103
- 229920001400 block copolymer Polymers 0.000 description 88
- 239000000178 monomer Substances 0.000 description 74
- 239000000126 substance Substances 0.000 description 53
- 230000009477 glass transition Effects 0.000 description 24
- 238000001338 self-assembly Methods 0.000 description 23
- 230000002688 persistence Effects 0.000 description 18
- 239000013626 chemical specie Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 238000001816 cooling Methods 0.000 description 10
- 229920001577 copolymer Polymers 0.000 description 9
- 230000009467 reduction Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- -1 polyoxyethylene Polymers 0.000 description 4
- 229920001451 polypropylene glycol Polymers 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- 229920000390 Poly(styrene-block-methyl methacrylate) Polymers 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000000113 differential scanning calorimetry Methods 0.000 description 3
- 230000036571 hydration Effects 0.000 description 3
- 238000006703 hydration reaction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 229920005604 random copolymer Polymers 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- DYLIWHYUXAJDOJ-OWOJBTEDSA-N (e)-4-(6-aminopurin-9-yl)but-2-en-1-ol Chemical compound NC1=NC=NC2=C1N=CN2C\C=C\CO DYLIWHYUXAJDOJ-OWOJBTEDSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002408 directed self-assembly Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- DMLAVOWQYNRWNQ-UHFFFAOYSA-N azobenzene Chemical group C1=CC=CC=C1N=NC1=CC=CC=C1 DMLAVOWQYNRWNQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- ZDZHCHYQNPQSGG-UHFFFAOYSA-N binaphthyl group Chemical group C1(=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12 ZDZHCHYQNPQSGG-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000011557 critical solution Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 150000001988 diarylethenes Chemical class 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005290 field theory Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005553 polystyrene-acrylate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
- C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
- C08F297/04—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type polymerising vinyl aromatic monomers and conjugated dienes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/165—Monolayers, e.g. Langmuir-Blodgett
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Graft Or Block Polymers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35169310P | 2010-06-04 | 2010-06-04 | |
| US35169310 | 2010-06-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2006639A true NL2006639A (en) | 2011-12-06 |
Family
ID=45066197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2006639A NL2006639A (en) | 2010-06-04 | 2011-04-20 | Self-assemblable polymer and method for use in lithography. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8921032B2 (enExample) |
| JP (1) | JP2013534542A (enExample) |
| KR (1) | KR101826774B1 (enExample) |
| CN (1) | CN102933628A (enExample) |
| NL (1) | NL2006639A (enExample) |
| WO (1) | WO2011151109A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US7989307B2 (en) | 2008-05-05 | 2011-08-02 | Micron Technology, Inc. | Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same |
| US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
| US8796155B2 (en) | 2008-12-04 | 2014-08-05 | Micron Technology, Inc. | Methods of fabricating substrates |
| US9330934B2 (en) * | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
| US8575032B2 (en) | 2011-05-05 | 2013-11-05 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
| US9177794B2 (en) * | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
| CN104105729B (zh) | 2012-02-10 | 2016-10-26 | 纳幕尔杜邦公司 | 高-x两嵌段共聚物的制备、纯化和使用 |
| EP2812383A1 (en) | 2012-02-10 | 2014-12-17 | E. I. Du Pont de Nemours and Company | Preparation, purification and use of high-x diblock copolymers |
| US20150004379A1 (en) | 2012-02-10 | 2015-01-01 | E I Du Pont Nemours And Company | Preparation, purification and use of high-x diblock copolymers |
| US8629048B1 (en) | 2012-07-06 | 2014-01-14 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
| KR102156005B1 (ko) * | 2012-07-10 | 2020-09-15 | 가부시키가이샤 니콘 | 마크 형성 방법 및 디바이스 제조 방법 |
| JP5881565B2 (ja) * | 2012-09-07 | 2016-03-09 | 東京エレクトロン株式会社 | 基板処理方法、プログラム及びコンピュータ記憶媒体 |
| US9368366B2 (en) * | 2013-02-14 | 2016-06-14 | Asml Netherlands B.V. | Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers |
| JP6263378B2 (ja) * | 2013-02-20 | 2018-01-17 | 東京応化工業株式会社 | 下地剤及びパターン形成方法 |
| TWI672788B (zh) * | 2013-03-27 | 2019-09-21 | 日商尼康股份有限公司 | 標記形成方法、標記檢測方法、及元件製造方法 |
| US9385026B2 (en) | 2014-05-08 | 2016-07-05 | GlobalFoundries, Inc. | Sublithographic Kelvin structure patterned with DSA |
| JP6530907B2 (ja) * | 2014-12-05 | 2019-06-12 | 東京応化工業株式会社 | 下地剤及び相分離構造を含む構造体の製造方法 |
| US9738765B2 (en) * | 2015-02-19 | 2017-08-22 | International Business Machines Corporation | Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers |
| US9815947B2 (en) | 2015-10-30 | 2017-11-14 | E I Du Pont De Nemours And Company | Substantially symmetrical 3-arm star block copolymers |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05165142A (ja) * | 1991-12-19 | 1993-06-29 | Seiko Epson Corp | 感光体 |
| WO2009151834A2 (en) * | 2008-05-08 | 2009-12-17 | The Regents Of The University Of California | Supramolecular block copolymer compositions for sub-micron lithography |
| KR20030025622A (ko) * | 2001-09-21 | 2003-03-29 | 한국화학연구원 | 비닐기 함유 디아릴에텐 단량체 및 이를 이용하여 제조한광활성 고분자 |
| CA2515213A1 (en) | 2003-02-11 | 2004-08-26 | University Of Washington | Stimuli-responsive polymer conjugates and related methods |
| US20060013956A1 (en) * | 2004-04-20 | 2006-01-19 | Angelescu Dan E | Method and apparatus for providing shear-induced alignment of nanostructure in thin films |
| JP3926360B2 (ja) * | 2004-10-13 | 2007-06-06 | 株式会社東芝 | パターン形成方法およびそれを用いた構造体の加工方法 |
| US8168284B2 (en) | 2005-10-06 | 2012-05-01 | Wisconsin Alumni Research Foundation | Fabrication of complex three-dimensional structures based on directed assembly of self-assembling materials on activated two-dimensional templates |
| EP1950799B1 (en) * | 2005-11-14 | 2012-04-18 | Tokyo Institute Of Technology | Method for production of nano-porous substrate |
| US20090220614A1 (en) | 2005-12-19 | 2009-09-03 | The Trustees Of The University Of Pennsylvania | Thermo-Responsive Block Co-Polymers, and Use Thereof |
| US7347953B2 (en) * | 2006-02-02 | 2008-03-25 | International Business Machines Corporation | Methods for forming improved self-assembled patterns of block copolymers |
| JP2007242188A (ja) * | 2006-03-10 | 2007-09-20 | Ricoh Co Ltd | 構造体とそれを用いた光記録媒体 |
| US7723009B2 (en) * | 2006-06-02 | 2010-05-25 | Micron Technology, Inc. | Topography based patterning |
| JP5340530B2 (ja) * | 2006-09-01 | 2013-11-13 | リンテック株式会社 | ミクロ相分離構造物の製造方法 |
| US7863376B2 (en) | 2007-03-13 | 2011-01-04 | The United States Of America As Represented By The Secretary Of The Army | Thermally controlled particulate core migration within polymer matrix |
| KR101291223B1 (ko) * | 2007-08-09 | 2013-07-31 | 한국과학기술원 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
| WO2009042207A2 (en) | 2007-09-27 | 2009-04-02 | Massachusetts Institute Of Technology | Broad wavelength range chemically-tunable photonic materials |
| JP5125385B2 (ja) * | 2007-10-10 | 2013-01-23 | 富士通株式会社 | 検証シナリオ作成プログラム、該プログラムを記録した記録媒体、検証シナリオ作成装置、および検証シナリオ作成方法 |
| KR101355167B1 (ko) * | 2007-12-14 | 2014-01-28 | 삼성전자주식회사 | 적어도 세 개의 고분자 블록을 구비하는 블록 공중합체를이용한 미세 패턴 형성 방법 |
| US7993816B2 (en) * | 2008-03-17 | 2011-08-09 | International Business Machines Corporation | Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom |
| US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
| JP5233789B2 (ja) * | 2008-03-26 | 2013-07-10 | 大日本印刷株式会社 | パターン形成方法 |
| US8450043B2 (en) * | 2010-09-30 | 2013-05-28 | International Business Machines Corporation | Patterning nano-scale patterns on a film comprising unzipping copolymers |
| US8323870B2 (en) * | 2010-11-01 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and photoresist with zipper mechanism |
-
2011
- 2011-04-20 JP JP2013512801A patent/JP2013534542A/ja active Pending
- 2011-04-20 NL NL2006639A patent/NL2006639A/en not_active Application Discontinuation
- 2011-04-20 CN CN2011800270397A patent/CN102933628A/zh active Pending
- 2011-04-20 US US13/700,703 patent/US8921032B2/en active Active
- 2011-04-20 WO PCT/EP2011/056308 patent/WO2011151109A1/en not_active Ceased
- 2011-04-20 KR KR1020137000322A patent/KR101826774B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8921032B2 (en) | 2014-12-30 |
| WO2011151109A1 (en) | 2011-12-08 |
| JP2013534542A (ja) | 2013-09-05 |
| US20130078574A1 (en) | 2013-03-28 |
| CN102933628A (zh) | 2013-02-13 |
| KR101826774B1 (ko) | 2018-02-07 |
| KR20130110145A (ko) | 2013-10-08 |
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