JP2013527325A - レベリング剤を含有する金属電解めっき用組成物 - Google Patents
レベリング剤を含有する金属電解めっき用組成物 Download PDFInfo
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- JP2013527325A JP2013527325A JP2013513029A JP2013513029A JP2013527325A JP 2013527325 A JP2013527325 A JP 2013527325A JP 2013513029 A JP2013513029 A JP 2013513029A JP 2013513029 A JP2013513029 A JP 2013513029A JP 2013527325 A JP2013527325 A JP 2013527325A
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- 239000002184 metal Substances 0.000 title claims abstract description 57
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- -1 imidazolium compound Chemical class 0.000 claims abstract description 61
- 239000000654 additive Substances 0.000 claims abstract description 31
- 230000000996 additive effect Effects 0.000 claims abstract description 23
- 229920000642 polymer Polymers 0.000 claims abstract description 21
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 10
- 125000000962 organic group Chemical group 0.000 claims abstract description 9
- 125000002883 imidazolyl group Chemical group 0.000 claims abstract description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 5
- 125000004429 atom Chemical group 0.000 claims abstract description 3
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- 238000000034 method Methods 0.000 claims description 26
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- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 4
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Images
Classifications
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/0605—Polycondensates containing five-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
- C08G73/0616—Polycondensates containing five-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with only two nitrogen atoms in the ring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
- C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
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- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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Abstract
Description
R1とR2とR3は、それぞれ独立して、H原子及び1〜20個の炭素原子をもつ有機基から選ばれ、
R4は、イミダゾール環の窒素原子のαまたはβ位にヒドロキシル基を含まない二価、三価または多価の有機基であり、
nは整数である。
−α−ジカルボニル化合物R1−CO−CO−R2、
−アルデヒドR3−CHO、
−少なくとも一種のアミノ化合物(NH2−)mR4
−プロトン酸(H+)oYo−、
式中、R1、R2、R3、R4、Y及びoは、上記の意味を持つ。
α−ジカルボニル化合物(a)は、好ましくは式L2aの化合物である。
R1−CO−CO−R2 (L2a)
R3−CHO (L2b)
(NH2−)mR4 (L2c)
MAO3XA−RA1−(S)d−RA2
−MAは、水素あるいはアルカリ金属(好ましくはNaまたはK)である
−XAはPまたはSである
−d=1〜6
−RA1は、C1−C8アルキル基またはヘテロアルキル基、アリール基または複素芳香族基から選ばれる。ヘテロアルキル基は、一個以上のヘテロ原子(N、S、O)と1〜12個の炭素をもつ。脂環式アリール基は、フェニルやナフチルなどの典型的なアリール基である。複素芳香族基はまた、一個以上のN、OまたはS原子と1〜3個の独立したあるいは縮環した環をもつアリール基であることが好ましい。
MAO3S−RA1−SH
MAO3S−RA1−S−S−RA1’−SO3MA
MAO3S−Ar−S−S−Ar−SO3MA
−SPS:ビス−(3−スルホプロピル)−ジスルフィド・二ナトリウム塩
−MPS:3−メルカプト−1−プロパンスルホン酸・ナトリウム塩
単独あるいは混合物中で用いられる促進剤の他の例には、特に限定されないが、MES(2−メルカプトエタンスルホン酸・ナトリウム塩);DPS(N,N−ジメチルジチオカルバミン酸(3−スルホプロピルエステル)、ナトリウム塩);UPS(3−[(アミノ−イミノメチル)−チオ]−1−プロピルスルホン酸);ZPS(3−(2−ベンズチアゾリルチオ)−1−プロパンスルホン酸・ナトリウム塩);3−メルカプト−プロピルスルホン酸−(3−スルホプロピル)エステル;メチル−(コ−スルホプロピル)−ジスルフィド・二ナトリウム塩;メチル−(コ−スルホプロピル)−トリスルフィド・二ナトリウム塩が含まれる。
好ましくは、sは1〜10の整数であり、より好ましくは1〜5、最も好ましくは1〜3の整数である。好ましくは、tは1〜10の整数であり、より好ましくは1〜5、最も好ましくは1〜3の整数である。
HOCH2−(CHOH)V−CH2OH (S3a)
(CHOH)w (S3b)
CHO−(CHOH)X−CH2OH (S4a)
CH2OH−(CHOH)y−CO−(CHOH)z−CH2OH (S4b)
実施例1
レベラーの製造
レベラー1
1molのホルマリンと1molのグリオキサールと1molの氷酢酸を反応容器に入れる。1molの1,4−ブタンジアミン(ヘアドライヤーで溶融、融点:25−28℃)を室温で滴下する(発熱、氷浴冷却)。混合物を一夜、室温で攪拌する。黒褐色混合物をロータリーエバボレータで最高で70℃(1mbar)で蒸発させる(発泡、EtOH/トルエンと共蒸留)。得られる生成物を、さらに精製することなく用いた。必要であれば標準的な方法で精製しても、あるいはアニオン交換にかけてもよい。
比較用レベラー2は、1,4−ブタンジオールジグリシジルエーテルとイミダゾールの反応生成物である。レベラー2は、欧州特許出願EP1619274A2の実施例6に記載のようにして製造した。
比較用レベラー3は、ラシヒ社から購入した市販製品のラルプレートIMEである。ラルプレートIMEは、エピクロロヒドリンとイミダゾールの反応生成物である。
サプレッサ1は、分子量が<13000g/モルで末端ヒドロキシル基をもつEO/POコポリマーである。
サプレッサ2は、分子量が<5000g/モルで末端ヒドロキシル基をもつEO/POコポリマーである。
脱イオン水と40g/lの銅(硫酸銅)、10g/lの硫酸、0.050g/lの塩素イオン(HCl)、0.028g/lのSPS、2.00mL/lの5.3重量%のサプレッサー1の脱イオン水水溶液を混合してめっき浴を調整した。
実施例1で調整した1重量%のポリイミダゾリウム化合物レベラー1の0.3125mL/lの水溶液をめっき浴に加えた以外は、実施例2の方法を繰り返した。
実施例2に記載のめっき浴を調整した。
1重量%のレベラー1の水溶液を0.625mL/lでめっき浴に添加した以外は、実施例2のめっき浴を使用した。
1重量%レベラー3の水溶液を1.25mL/lでめっき浴に添加した以外は、実施例2のめっき浴を使用した。
−5mA/cm2の直流を27秒間印加した以外は実施例6を繰り返した。このようにして得られた電気めっき銅層を切断しその断面をSEMで検査した。
1重量%の比較用レベラー3の水溶液を0.625mL/lでめっき浴に添加した以外は、実施例6を繰り返した。
脱イオン水と40g/lの銅(硫酸銅)、10g/l硫酸、0.050g/l塩素イオン(HCl)、0.028g/lのSPS、0.100g/lのサプレッサ2を混合してめっき浴を調整した。
10重量%の比較用レベラー2の水溶液を0.02mL/lでめっき浴に添加した以外は、実施例9の方法を繰り返した。
Claims (17)
- R1とR2がH原子である請求項1に記載の組成物。
- R3がH原子である請求項1又は2に記載の組成物。
- R4が置換又は非置換のC2〜C20アルカンジイルである請求項1〜3のいずれか一項に記載の組成物。
- R4がヒドロキシル基を含まない請求項4に記載の組成物。
- 前記少なくとも一種の添加物が対イオンYo−(式中oは整数である)を含む請求項1〜5のいずれか一項に記載の組成物。
- 前記対イオンYo−が、クロリド、スルフェートまたはアセテートである請求項6に記載の組成物。
- 前記ポリマーのイミダゾリウム化合物の、ゲル浸透クロマトグラフィーで測定した数平均分子量Mnが500g/molより大きい請求項1〜7のいずれか一項に記載の組成物。
- 前記ポリマーのイミダゾリウム化合物が、80重量%より多い式L1の構造単位を含む請求項1〜8のいずれか一項に記載の組成物。
- 前記添加物が、
α−ジカルボニル化合物R1−CO−CO−R2、
アルデヒドR3−CHO、
少なくとも一種のアミノ化合物(NH2−)mR4、
プロトン酸(H+)oYo−、
(式中、R1、R2、R3、R4、Y及びoは上記の意味を持つ)を反応させることにより製造可能である請求項1〜9のいずれか一項に記載の組成物。 - 前記アミノ化合物が、脂肪族または芳香族のジアミン、トリアミン、マルチアミン、またはこれらの混合物である請求項10に記載の組成物。
- さらに一種以上の加速剤を含む請求項1〜11のいずれか一項に記載の組成物。
- さらに一種以上の抑制剤を含む請求項1〜12のいずれか一項に記載の組成物。
- 請求項1〜13のいずれか一項に定義された添加物の金属含有層析出用の浴での使用。
- a)請求項1〜13のいずれか一項に記載の組成物を含む金属メッキ浴を基材と接触させ、
b)前記基材上に金属層を析出させるのに充分な時間、前記基材に電流密度を印加することにより基材上に金属層を析出させる方法。 - 前記基材が、マイクロメータまたはサブマイクロメータのサイズの形状構造を含み、マイクロメータまたはサブマイクロメータのサイズの形状構造の充填のために前記析出が行われる請求項15に記載の方法。
- 前記マイクロメータまたはサブマイクロメータサイズの形状構造の大きさが1〜1000nmである及び/又はアスペクト比が4以上である請求項15に記載の方法。
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JP2017036500A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | イミダゾールとビスエポキシド化合物との反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
JP2017053031A (ja) * | 2015-09-09 | 2017-03-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 酸性銅電気めっき浴ならびに低内部応力及び良好な延性の銅析出物を電気めっきするための方法 |
KR20200110674A (ko) * | 2018-01-16 | 2020-09-24 | 아토테크더치랜드게엠베하 | 금속 또는 금속 합금 침착 조성물 및 도금 화합물 |
JP2021511439A (ja) * | 2018-01-16 | 2021-05-06 | アトテック ドイチェランド ゲーエムベーハー | 金属又は金属合金の析出組成物及びめっき化合物 |
JP7021370B2 (ja) | 2018-01-16 | 2022-02-16 | アトテック ドイチェランド ゲーエムベーハー | 金属又は金属合金の析出組成物及びめっき化合物 |
KR102661578B1 (ko) | 2018-01-16 | 2024-04-29 | 아토테크 도이칠란트 게엠베하 운트 콤파니 카게 | 금속 또는 금속 합금 침착 조성물 및 도금 화합물 |
JP2019127652A (ja) * | 2018-01-24 | 2019-08-01 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ビス−アリールアンモニウム化合物を含むメッキ用平坦剤及びこれを用いた銅メッキ方法 |
JP7131759B2 (ja) | 2018-01-24 | 2022-09-06 | サムソン エレクトロ-メカニックス カンパニーリミテッド. | ビス-アリールアンモニウム化合物を含むメッキ用平坦剤及びこれを用いた銅メッキ方法 |
Also Published As
Publication number | Publication date |
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MY164464A (en) | 2017-12-15 |
SG185736A1 (en) | 2012-12-28 |
KR101955869B1 (ko) | 2019-03-07 |
EP2576696A4 (en) | 2014-07-16 |
CN102939339B (zh) | 2016-02-17 |
US20130068626A1 (en) | 2013-03-21 |
TWI539036B (zh) | 2016-06-21 |
CN102939339A (zh) | 2013-02-20 |
RU2012157535A (ru) | 2014-07-20 |
KR20180017244A (ko) | 2018-02-20 |
TW201211321A (en) | 2012-03-16 |
SG10201504251WA (en) | 2015-07-30 |
WO2011151785A1 (en) | 2011-12-08 |
US9683302B2 (en) | 2017-06-20 |
IL223183A0 (en) | 2013-02-03 |
EP2576696B1 (en) | 2017-10-04 |
EP2576696A1 (en) | 2013-04-10 |
KR20130112018A (ko) | 2013-10-11 |
KR101891473B1 (ko) | 2018-08-27 |
KR101829866B1 (ko) | 2018-02-20 |
RU2603675C2 (ru) | 2016-11-27 |
IL223183B (en) | 2018-03-29 |
JP5933532B2 (ja) | 2016-06-15 |
KR20180094140A (ko) | 2018-08-22 |
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