JP2013514246A5 - - Google Patents
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- Publication number
- JP2013514246A5 JP2013514246A5 JP2012543576A JP2012543576A JP2013514246A5 JP 2013514246 A5 JP2013514246 A5 JP 2013514246A5 JP 2012543576 A JP2012543576 A JP 2012543576A JP 2012543576 A JP2012543576 A JP 2012543576A JP 2013514246 A5 JP2013514246 A5 JP 2013514246A5
- Authority
- JP
- Japan
- Prior art keywords
- indium
- alkoxide
- halogen
- composition
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021617 Indium monochloride Inorganic materials 0.000 claims description 10
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000004703 alkoxides Chemical class 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 26
- 239000000203 mixture Substances 0.000 claims 10
- 229910003437 indium oxide Inorganic materials 0.000 claims 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 5
- 239000002612 dispersion medium Substances 0.000 claims 4
- 238000007641 inkjet printing Methods 0.000 claims 4
- 239000002904 solvent Substances 0.000 claims 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims 3
- 230000005670 electromagnetic radiation Effects 0.000 claims 3
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 2
- 239000007791 liquid phase Substances 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000003586 protic polar solvent Substances 0.000 claims 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims 1
- 150000001298 alcohols Chemical class 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 238000007766 curtain coating Methods 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 239000002609 medium Substances 0.000 claims 1
- 230000005499 meniscus Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 150000003141 primary amines Chemical class 0.000 claims 1
- 238000007639 printing Methods 0.000 claims 1
- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000007764 slot die coating Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- -1 indium alkoxide Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009054997.8 | 2009-12-18 | ||
| DE102009054997A DE102009054997B3 (de) | 2009-12-18 | 2009-12-18 | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
| PCT/EP2010/068185 WO2011073005A2 (de) | 2009-12-18 | 2010-11-25 | Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013514246A JP2013514246A (ja) | 2013-04-25 |
| JP2013514246A5 true JP2013514246A5 (OSRAM) | 2014-10-30 |
| JP5864434B2 JP5864434B2 (ja) | 2016-02-17 |
Family
ID=43927323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012543576A Expired - Fee Related JP5864434B2 (ja) | 2009-12-18 | 2010-11-25 | 酸化インジウム含有層の形成方法、この方法により形成された酸化インジウム含有層および該酸化インジウム含有層の使用 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8841164B2 (OSRAM) |
| EP (1) | EP2513355B1 (OSRAM) |
| JP (1) | JP5864434B2 (OSRAM) |
| KR (1) | KR101719853B1 (OSRAM) |
| CN (1) | CN102652187B (OSRAM) |
| DE (1) | DE102009054997B3 (OSRAM) |
| RU (1) | RU2567142C9 (OSRAM) |
| TW (1) | TWI509102B (OSRAM) |
| WO (1) | WO2011073005A2 (OSRAM) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007018431A1 (de) * | 2007-04-19 | 2008-10-30 | Evonik Degussa Gmbh | Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor |
| DE102008058040A1 (de) * | 2008-11-18 | 2010-05-27 | Evonik Degussa Gmbh | Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten |
| DE102009028801B3 (de) | 2009-08-21 | 2011-04-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung |
| DE102009028802B3 (de) | 2009-08-21 | 2011-03-24 | Evonik Degussa Gmbh | Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung |
| DE102010031895A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
| DE102010031592A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
| DE102010043668B4 (de) * | 2010-11-10 | 2012-06-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
| JP5871263B2 (ja) * | 2011-06-14 | 2016-03-01 | 富士フイルム株式会社 | 非晶質酸化物薄膜の製造方法 |
| DE102011084145A1 (de) | 2011-10-07 | 2013-04-11 | Evonik Degussa Gmbh | Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung |
| US9698386B2 (en) | 2012-04-13 | 2017-07-04 | Oti Lumionics Inc. | Functionalization of a substrate |
| US8853070B2 (en) * | 2012-04-13 | 2014-10-07 | Oti Lumionics Inc. | Functionalization of a substrate |
| US9881791B2 (en) | 2012-04-16 | 2018-01-30 | Korea Electronics Technology Institute | Method for producing an oxide film using a low temperature process, an oxide film and an electronic device thereof |
| DE102012209918A1 (de) | 2012-06-13 | 2013-12-19 | Evonik Industries Ag | Verfahren zur Herstellung Indiumoxid-haltiger Schichten |
| DE102013212018A1 (de) | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung |
| DE102013212017A1 (de) | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung |
| DE102013212019A1 (de) | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung |
| DE102014202718A1 (de) | 2014-02-14 | 2015-08-20 | Evonik Degussa Gmbh | Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung |
| EP3009402A1 (de) * | 2014-10-15 | 2016-04-20 | Justus-Liebig-Universität Gießen | Verfahren zur Herstellung von gemischten Metallhalogenid-Alkoxiden und Metalloxid-Nanopartikeln |
| WO2017046023A1 (en) | 2015-09-14 | 2017-03-23 | University College Cork | Semi-metal rectifying junction |
| JP6828293B2 (ja) | 2015-09-15 | 2021-02-10 | 株式会社リコー | ｎ型酸化物半導体膜形成用塗布液、ｎ型酸化物半導体膜の製造方法、及び電界効果型トランジスタの製造方法 |
| CN105836792B (zh) * | 2016-05-27 | 2017-08-25 | 洛阳瑞德材料技术服务有限公司 | 一种纳米氧化铟的生产方法 |
| JP2019057698A (ja) * | 2017-09-22 | 2019-04-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 薄膜形成方法および薄膜形成装置 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59198606A (ja) | 1983-04-27 | 1984-11-10 | 三菱マテリアル株式会社 | 透明導電膜形成用組成物 |
| JPS59198607A (ja) * | 1983-04-27 | 1984-11-10 | 三菱マテリアル株式会社 | 保護膜を備えた透明導電膜 |
| US4681959A (en) | 1985-04-22 | 1987-07-21 | Stauffer Chemical Company | Preparation of insoluble metal alkoxides |
| JPH01115010A (ja) * | 1987-10-28 | 1989-05-08 | Central Glass Co Ltd | 透明導電性膜用組成物およびその膜の形成方法 |
| JPH02113033A (ja) | 1988-10-21 | 1990-04-25 | Central Glass Co Ltd | 静電防止処理を施された非金属材料およびこれらの処理方法 |
| JPH02145459A (ja) | 1988-11-28 | 1990-06-04 | Central Glass Co Ltd | 複写機用ガラスおよびその製造法 |
| FR2659649B1 (fr) * | 1990-03-16 | 1992-06-12 | Kodak Pathe | Preparation d'alkoxydes d'indium solubles dans les solvants organiques. |
| RU2118402C1 (ru) * | 1994-05-17 | 1998-08-27 | Виктор Васильевич Дроботенко | Способ получения металлооксидных покрытий (его варианты) |
| JPH09157855A (ja) * | 1995-12-06 | 1997-06-17 | Kansai Shin Gijutsu Kenkyusho:Kk | 金属酸化物薄膜の形成方法 |
| JPH11106935A (ja) * | 1997-09-30 | 1999-04-20 | Fuji Photo Film Co Ltd | 金属酸化物薄膜の製造方法及び金属酸化物薄膜 |
| JP2000016812A (ja) | 1998-07-02 | 2000-01-18 | Kansai Shingijutsu Kenkyusho:Kk | 金属酸化物膜の製造方法 |
| JP4264145B2 (ja) * | 1998-07-08 | 2009-05-13 | 株式会社Ｋｒｉ | Ｉｎ２Ｏ３−ＳｎＯ２前駆体塗布液の製造方法 |
| JP4030243B2 (ja) * | 1999-12-20 | 2008-01-09 | 日本電気株式会社 | 強誘電体薄膜形成用溶液及び強誘電体薄膜形成方法 |
| JP4073146B2 (ja) | 2000-03-17 | 2008-04-09 | 株式会社高純度化学研究所 | ガリウムアルコキシドの精製方法 |
| JP2005272189A (ja) * | 2004-03-24 | 2005-10-06 | Japan Science & Technology Agency | 紫外光照射による酸化物半導体薄膜の作製法 |
| JP2008500151A (ja) | 2004-05-28 | 2008-01-10 | 独立行政法人科学技術振興機構 | パターン膜形成方法、装置と材料および製品 |
| JP4767616B2 (ja) * | 2005-07-29 | 2011-09-07 | 富士フイルム株式会社 | 半導体デバイスの製造方法及び半導体デバイス |
| JP5249240B2 (ja) | 2006-12-29 | 2013-07-31 | スリーエム イノベイティブ プロパティズ カンパニー | 金属アルコキシド含有フィルムの硬化方法 |
| DE102007013181B4 (de) * | 2007-03-20 | 2017-11-09 | Evonik Degussa Gmbh | Transparente, elektrisch leitfähige Schicht |
| DE102007018431A1 (de) | 2007-04-19 | 2008-10-30 | Evonik Degussa Gmbh | Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor |
| GB2454019B (en) | 2007-10-27 | 2011-11-09 | Multivalent Ltd | Improvements in or relating to synthesis of gallium and indium alkoxides |
| DE102008058040A1 (de) | 2008-11-18 | 2010-05-27 | Evonik Degussa Gmbh | Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten |
| DE102009009337A1 (de) | 2009-02-17 | 2010-08-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung |
| DE102009009338A1 (de) | 2009-02-17 | 2010-08-26 | Evonik Degussa Gmbh | Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
| DE102009050703B3 (de) | 2009-10-26 | 2011-04-21 | Evonik Goldschmidt Gmbh | Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis |
-
2009
- 2009-12-18 DE DE102009054997A patent/DE102009054997B3/de not_active Expired - Fee Related
-
2010
- 2010-11-25 WO PCT/EP2010/068185 patent/WO2011073005A2/de not_active Ceased
- 2010-11-25 CN CN201080057750.2A patent/CN102652187B/zh not_active Expired - Fee Related
- 2010-11-25 US US13/516,900 patent/US8841164B2/en active Active
- 2010-11-25 KR KR1020127015506A patent/KR101719853B1/ko not_active Expired - Fee Related
- 2010-11-25 JP JP2012543576A patent/JP5864434B2/ja not_active Expired - Fee Related
- 2010-11-25 RU RU2012130174/02A patent/RU2567142C9/ru not_active IP Right Cessation
- 2010-11-25 EP EP10785038.0A patent/EP2513355B1/de not_active Not-in-force
- 2010-12-15 TW TW099143972A patent/TWI509102B/zh not_active IP Right Cessation
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