WO2011073005A2 - Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung - Google Patents

Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung Download PDF

Info

Publication number
WO2011073005A2
WO2011073005A2 PCT/EP2010/068185 EP2010068185W WO2011073005A2 WO 2011073005 A2 WO2011073005 A2 WO 2011073005A2 EP 2010068185 W EP2010068185 W EP 2010068185W WO 2011073005 A2 WO2011073005 A2 WO 2011073005A2
Authority
WO
WIPO (PCT)
Prior art keywords
indium
indium oxide
composition
layers
alkoxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/068185
Other languages
German (de)
English (en)
French (fr)
Other versions
WO2011073005A3 (de
Inventor
Jürgen STEIGER
Duy Vu Pham
Heiko Thiem
Alexey Merkulov
Arne Hoppe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Operations GmbH
Original Assignee
Evonik Degussa GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa GmbH filed Critical Evonik Degussa GmbH
Priority to JP2012543576A priority Critical patent/JP5864434B2/ja
Priority to US13/516,900 priority patent/US8841164B2/en
Priority to KR1020127015506A priority patent/KR101719853B1/ko
Priority to RU2012130174/02A priority patent/RU2567142C9/ru
Priority to CN201080057750.2A priority patent/CN102652187B/zh
Priority to EP10785038.0A priority patent/EP2513355B1/de
Publication of WO2011073005A2 publication Critical patent/WO2011073005A2/de
Publication of WO2011073005A3 publication Critical patent/WO2011073005A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Indium oxide indium (III) oxide, ln 2 O 3
  • Indium (III) oxide, ln 2 O 3 ) is between 3.6 and 3.75 eV (measured for vapor deposited layers, HS Kim, PD Byrne, A. Facchetti, TJ Marks, J. Am. Chem. 2008, 130, 12580-12581) is a promising and therefore popular semiconductor.
  • thin films of a few hundred nanometers in thickness can provide one have high transparency in the visible spectral range of greater than 90% at 550 nm.
  • charge carrier mobilities of up to 160 cm 2 A s. So far, however, such values can not yet be achieved by solution processing (H. Nakazawa, Y. Ito, E.
  • Composition is converted to an indium oxide-containing layer.
  • a precursor is a thermally decomposable or with electromagnetic radiation compound, with the metal oxide-containing layers can be formed in the presence or absence of oxygen or other oxidizing agents to understand.
  • the particle concept has two significant disadvantages compared to the use of precursors: Firstly, the particle dispersions have a colloidal instability, which makes the application of (in relation to the later layer properties disadvantageous) dispersing additives required, on the other hand form many of the usable particles (eg due to passivation layers) only incomplete layers due to sintering, so that in the layers partially particulate structures occur. At the particle boundary there is a considerable particle-particle resistance, which reduces the mobility of the charge carriers and increases the general sheet resistance.
  • Alkali metal alkoxide can be produced.
  • a corresponding method also describes JP 02-145459 A.
  • JP 09-157855 A describes a sol-gel process for the preparation of a metal oxide layer in which a metal oxide sol prepared by hydrolysis from a metal alkoxide or a metal salt (eg an indium alkoxide or salt) is applied to the surface of a substrate, optionally at a temperature at which the gel does not crystallize, is dried and irradiated with UV radiation of less than 360 nm.
  • a metal oxide sol prepared by hydrolysis from a metal alkoxide or a metal salt eg an indium alkoxide or salt
  • JP 2007-042689 A describes metal alkoxide solutions which may contain indium alkoxides, and also processes for the production of semiconductor components which use these metal alkoxide solutions.
  • the metal alkoxide films are thermally treated and converted to the oxide layer.
  • Alkoxyalkyl radical R selected from -CH 3 , -CH 2 CH 3 , -CH 2 CH 2 OCH 3 , -CH (CH 3 ) 2 or -C (CH 3 ) 3 .
  • indium-halogen-alkoxides which have the same alkyl or alkoxyalkyl radical R are preferably used for the process according to the invention.
  • the inventive method is suitable - in the case that only indium-containing compound
  • the composition further comprises at least one solvent or dispersion medium.
  • the composition may also comprise two or more solvents or dispersion media.
  • only one solvent or dispersion medium should be present in the composition.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemically Coating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
PCT/EP2010/068185 2009-12-18 2010-11-25 Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung Ceased WO2011073005A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012543576A JP5864434B2 (ja) 2009-12-18 2010-11-25 酸化インジウム含有層の形成方法、この方法により形成された酸化インジウム含有層および該酸化インジウム含有層の使用
US13/516,900 US8841164B2 (en) 2009-12-18 2010-11-25 Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof
KR1020127015506A KR101719853B1 (ko) 2009-12-18 2010-11-25 산화인듐 함유 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 함유 층 및 그의 용도
RU2012130174/02A RU2567142C9 (ru) 2009-12-18 2010-11-25 Способ получения слоев, содержащих оксид индия, полученные этим способом слои, содержащие оксид индия, и их применение
CN201080057750.2A CN102652187B (zh) 2009-12-18 2010-11-25 生产含氧化铟的层的方法，通过该方法生产的含氧化铟的层及其用途
EP10785038.0A EP2513355B1 (de) 2009-12-18 2010-11-25 Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009054997.8 2009-12-18
DE102009054997A DE102009054997B3 (de) 2009-12-18 2009-12-18 Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung

Publications (2)

Publication Number Publication Date
WO2011073005A2 true WO2011073005A2 (de) 2011-06-23
WO2011073005A3 WO2011073005A3 (de) 2011-09-01

Family

ID=43927323

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/068185 Ceased WO2011073005A2 (de) 2009-12-18 2010-11-25 Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung

Country Status (9)

Country Link
US (1) US8841164B2 (OSRAM)
EP (1) EP2513355B1 (OSRAM)
JP (1) JP5864434B2 (OSRAM)
KR (1) KR101719853B1 (OSRAM)
CN (1) CN102652187B (OSRAM)
DE (1) DE102009054997B3 (OSRAM)
RU (1) RU2567142C9 (OSRAM)
TW (1) TWI509102B (OSRAM)
WO (1) WO2011073005A2 (OSRAM)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546594B2 (en) 2010-07-21 2013-10-01 Evonik Degussa Gmbh Indium oxoalkoxides for producing coatings containing indium oxide
WO2013186082A2 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur herstellung indiumoxid-haltiger schichten
US8859332B2 (en) 2010-11-10 2014-10-14 Evonik Degussa Gmbh Process for producing indium oxide-containing layers
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung
US9309595B2 (en) 2009-08-21 2016-04-12 Evonik Degussa Gmbh Method for the production of metal oxide-containing layers
US9315901B2 (en) 2009-08-21 2016-04-19 Evonik Degussa Gmbh Method for the production of layers containing indium oxide
US9650396B2 (en) 2010-07-21 2017-05-16 Evonik Degussa Gmbh Indium oxoalkoxides for producing coatings containing indium oxide

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007018431A1 (de) * 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008058040A1 (de) * 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
JP5871263B2 (ja) * 2011-06-14 2016-03-01 富士フイルム株式会社 非晶質酸化物薄膜の製造方法
DE102011084145A1 (de) 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
US9698386B2 (en) 2012-04-13 2017-07-04 Oti Lumionics Inc. Functionalization of a substrate
US8853070B2 (en) * 2012-04-13 2014-10-07 Oti Lumionics Inc. Functionalization of a substrate
US9881791B2 (en) 2012-04-16 2018-01-30 Korea Electronics Technology Institute Method for producing an oxide film using a low temperature process, an oxide film and an electronic device thereof
DE102013212018A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung
EP3009402A1 (de) * 2014-10-15 2016-04-20 Justus-Liebig-Universität Gießen Verfahren zur Herstellung von gemischten Metallhalogenid-Alkoxiden und Metalloxid-Nanopartikeln
WO2017046023A1 (en) 2015-09-14 2017-03-23 University College Cork Semi-metal rectifying junction
JP6828293B2 (ja) 2015-09-15 2021-02-10 株式会社リコー ｎ型酸化物半導体膜形成用塗布液、ｎ型酸化物半導体膜の製造方法、及び電界効果型トランジスタの製造方法
CN105836792B (zh) * 2016-05-27 2017-08-25 洛阳瑞德材料技术服务有限公司 一种纳米氧化铟的生产方法
JP2019057698A (ja) * 2017-09-22 2019-04-11 株式会社Ｓｃｒｅｅｎホールディングス 薄膜形成方法および薄膜形成装置

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198607A (ja) 1983-04-27 1984-11-10 三菱マテリアル株式会社 保護膜を備えた透明導電膜
JPS59198606A (ja) 1983-04-27 1984-11-10 三菱マテリアル株式会社 透明導電膜形成用組成物
US4681959A (en) 1985-04-22 1987-07-21 Stauffer Chemical Company Preparation of insoluble metal alkoxides
JPH01115010A (ja) 1987-10-28 1989-05-08 Central Glass Co Ltd 透明導電性膜用組成物およびその膜の形成方法
JPH02113033A (ja) 1988-10-21 1990-04-25 Central Glass Co Ltd 静電防止処理を施された非金属材料およびこれらの処理方法
JPH02145459A (ja) 1988-11-28 1990-06-04 Central Glass Co Ltd 複写機用ガラスおよびその製造法
US5237081A (en) 1990-03-16 1993-08-17 Eastman Kodak Company Preparation of indium alkoxides soluble in organic solvents
JPH09157855A (ja) 1995-12-06 1997-06-17 Kansai Shin Gijutsu Kenkyusho:Kk 金属酸化物薄膜の形成方法
JPH11106935A (ja) 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
JP2000016812A (ja) 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
US6426425B2 (en) 2000-03-17 2002-07-30 Kabushikikaisha Kojundokagaku Kenkyusho Process for purifying gallium alkoxide
JP2007042689A (ja) 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス
WO2008083310A1 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Method of curing metal alkoxide-containing films
US20090112012A1 (en) 2007-10-27 2009-04-30 Multivalent Limited Synthesis of gallium and indium alkoxides

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2118402C1 (ru) * 1994-05-17 1998-08-27 Виктор Васильевич Дроботенко Способ получения металлооксидных покрытий (его варианты)
JP4264145B2 (ja) * 1998-07-08 2009-05-13 株式会社Ｋｒｉ Ｉｎ２Ｏ３−ＳｎＯ２前駆体塗布液の製造方法
JP4030243B2 (ja) * 1999-12-20 2008-01-09 日本電気株式会社 強誘電体薄膜形成用溶液及び強誘電体薄膜形成方法
JP2005272189A (ja) * 2004-03-24 2005-10-06 Japan Science & Technology Agency 紫外光照射による酸化物半導体薄膜の作製法
JP2008500151A (ja) 2004-05-28 2008-01-10 独立行政法人科学技術振興機構 パターン膜形成方法、装置と材料および製品
DE102007013181B4 (de) * 2007-03-20 2017-11-09 Evonik Degussa Gmbh Transparente, elektrisch leitfähige Schicht
DE102007018431A1 (de) 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008058040A1 (de) 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009009337A1 (de) 2009-02-17 2010-08-19 Evonik Degussa Gmbh Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009050703B3 (de) 2009-10-26 2011-04-21 Evonik Goldschmidt Gmbh Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198607A (ja) 1983-04-27 1984-11-10 三菱マテリアル株式会社 保護膜を備えた透明導電膜
JPS59198606A (ja) 1983-04-27 1984-11-10 三菱マテリアル株式会社 透明導電膜形成用組成物
US4681959A (en) 1985-04-22 1987-07-21 Stauffer Chemical Company Preparation of insoluble metal alkoxides
JPH01115010A (ja) 1987-10-28 1989-05-08 Central Glass Co Ltd 透明導電性膜用組成物およびその膜の形成方法
JPH02113033A (ja) 1988-10-21 1990-04-25 Central Glass Co Ltd 静電防止処理を施された非金属材料およびこれらの処理方法
JPH02145459A (ja) 1988-11-28 1990-06-04 Central Glass Co Ltd 複写機用ガラスおよびその製造法
US5237081A (en) 1990-03-16 1993-08-17 Eastman Kodak Company Preparation of indium alkoxides soluble in organic solvents
JPH09157855A (ja) 1995-12-06 1997-06-17 Kansai Shin Gijutsu Kenkyusho:Kk 金属酸化物薄膜の形成方法
JPH11106935A (ja) 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
JP2000016812A (ja) 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
US6426425B2 (en) 2000-03-17 2002-07-30 Kabushikikaisha Kojundokagaku Kenkyusho Process for purifying gallium alkoxide
JP2007042689A (ja) 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス
WO2008083310A1 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Method of curing metal alkoxide-containing films
US20090112012A1 (en) 2007-10-27 2009-04-30 Multivalent Limited Synthesis of gallium and indium alkoxides

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
A. GUPTA; H. CAO, PAREKH; K.K.V. RAO; A.R. RAJU; U.V. WAGHMARE, J. APPL. PHYS., vol. 101, 2007, pages 09N513
CARMALT ET AL., COORD. CHEM REV., vol. 250, 2006, pages 682 - 709
D.C. BRADLEY; H. CHUDZYNSKA; D.M. FRIGO; M.E. HAMMOND; M.B. HURSTHOUSE; M.A. MAZID, POLYHEDRON, vol. 9, 1990, pages 719
H. NAKAZAWA; Y. ITO; E. MATSUMOTO; K. ADACHI; N. AOKI; Y. OCHIAI, J. APPL. PHYS., vol. 100, 2006, pages 093706
H.S. KIM; P.D. BYRNE; A. FACCHETTI; T.J. MARKS, J. AM. CHEM. SOC., vol. 130, 2008, pages 12580 - 12581
S. CHATTERJEE; S. R. BINDAL; R.C. MEHROTRA, J. INDIAN CHEM. SOC., vol. 53, 1976, pages 867
VON SEIGI SUH ET AL., J. AM. CHEM. SOC., vol. 122, 2000, pages 9396 - 9404

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9309595B2 (en) 2009-08-21 2016-04-12 Evonik Degussa Gmbh Method for the production of metal oxide-containing layers
US9315901B2 (en) 2009-08-21 2016-04-19 Evonik Degussa Gmbh Method for the production of layers containing indium oxide
US8546594B2 (en) 2010-07-21 2013-10-01 Evonik Degussa Gmbh Indium oxoalkoxides for producing coatings containing indium oxide
US9650396B2 (en) 2010-07-21 2017-05-16 Evonik Degussa Gmbh Indium oxoalkoxides for producing coatings containing indium oxide
US8859332B2 (en) 2010-11-10 2014-10-14 Evonik Degussa Gmbh Process for producing indium oxide-containing layers
WO2013186082A2 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur herstellung indiumoxid-haltiger schichten
DE102012209918A1 (de) 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur Herstellung Indiumoxid-haltiger Schichten
JP2015522509A (ja) * 2012-06-13 2015-08-06 エボニック インダストリーズ アクチエンゲゼルシャフトＥｖｏｎｉｋ Ｉｎｄｕｓｔｒｉｅｓ ＡＧ 酸化インジウム含有層の製造法
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung

Also Published As

Publication number Publication date
KR20120095422A (ko) 2012-08-28
US8841164B2 (en) 2014-09-23
RU2012130174A (ru) 2014-01-27
RU2567142C2 (ru) 2015-11-10
EP2513355A2 (de) 2012-10-24
TW201137170A (en) 2011-11-01
CN102652187A (zh) 2012-08-29
WO2011073005A3 (de) 2011-09-01
JP2013514246A (ja) 2013-04-25
RU2567142C9 (ru) 2016-10-27
DE102009054997B3 (de) 2011-06-01
US20130122647A1 (en) 2013-05-16
JP5864434B2 (ja) 2016-02-17
EP2513355B1 (de) 2017-08-23
TWI509102B (zh) 2015-11-21
CN102652187B (zh) 2016-03-30
KR101719853B1 (ko) 2017-04-04

Similar Documents

Publication Publication Date Title
EP2513355B1 (de) Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung
DE102010043668B4 (de) Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
EP2467513B1 (de) Verfahren zur herstellung metalloxid-haltiger schichten
EP2398934B1 (de) Verfahren zur herstellung halbleitender indiumoxid-schichten, nach dem verfahren hergestellte indiumoxid-schichten und deren verwendung
EP2467514B1 (de) Verfahren zur herstellung indiumoxid-haltiger schichten
EP2595999B1 (de) Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten
EP2595998B1 (de) Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten
EP2513120B1 (de) Verfahren zur herstellung von indiumchlordialkoxiden
EP2398935A1 (de) Indiumalkoxid-haltige zusammensetzungen, verfahren zu ihrer herstellung und ihre verwendung
EP2861782B1 (de) Verfahren zur herstellung indiumoxid-haltiger schichten
EP3013837B1 (de) Formulierungen zur herstellung indiumoxid-haltiger schichten, verfahren zu ihrer herstellung und ihre verwendung
EP3013838B1 (de) Verfahren zur herstellung von indiumalkoxid-verbindungen, die nach dem verfahren herstellbaren indiumalkoxid-verbindungen und ihre verwendung

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080057750.2

Country of ref document: CN

REEP Request for entry into the european phase

Ref document number: 2010785038

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2010785038

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20127015506

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2012543576

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2012130174

Country of ref document: RU

WWE Wipo information: entry into national phase

Ref document number: 13516900

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10785038

Country of ref document: EP

Kind code of ref document: A2