JP2013509349A - Cnt浸出セラミック繊維材料及びそのプロセス - Google Patents
Cnt浸出セラミック繊維材料及びそのプロセス Download PDFInfo
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- JP2013509349A JP2013509349A JP2012536852A JP2012536852A JP2013509349A JP 2013509349 A JP2013509349 A JP 2013509349A JP 2012536852 A JP2012536852 A JP 2012536852A JP 2012536852 A JP2012536852 A JP 2012536852A JP 2013509349 A JP2013509349 A JP 2013509349A
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- ceramic fiber
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- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
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- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06M—TREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
- D06M11/00—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising
- D06M11/73—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising with carbon or compounds thereof
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Abstract
【選択図】図1
Description
本願は、2007年1月3日出願の米国特許出願第11/619,327号の一部継続出願である。本願は、2009年4月10日出願の米国仮出願第61/168,516号、2009年4月14日出願の米国仮出願第61/169,055号、2009年2月27日出願の米国仮出願第61/155,935号、2009年3月3日出願の米国仮出願第61/157,096号、及び2009年5月29日出願の米国仮出願第61/182,153号に基づいて優先権を主張するものであり、全体を参照することにより全内容が本明細書に組み込まれる。
工程402:セラミック繊維材料へCNT形成触媒を適用すること。
工程404:カーボンナノチューブの合成に十分な温度までセラミック繊維材料を加熱すること。
工程406:触媒を含むセラミック繊維上においてCVDを介してCNT成長を促進すること。
当該技術分野で既知の標準的なCNT合成反応器は横断面が円形である。この理由には、例えば、歴史的理由(研究所では円筒状の反応器がよく用いられる)及び利便性(流体力学は円筒状の反応器にモデル化すると容易になり、また、加熱器システムは円管チューブ(石英など)に容易に対応する)、並びに製造の容易性などの多くの理由がある。本発明は、従来の円筒形状を変えて、矩形横断面を有するCNT合成反応器を提供する。変更の理由は以下の通りである。1)反応器により処理可能な多くのセラミック繊維材料は相対的に平面的(例えば、形状が薄いテープやシート状など)であるので、円形横断面では反応器の体積を効率的に使用していない。この非効率な使用は、円筒状のCNT合成反応器にとって、例えば、以下のa)ないしc)に挙げるような、いくつかの欠点となる。a)十分なシステムパージの維持;反応器の体積が増大すれば、同レベルのガスパージを維持するためにガス流量の増大が必要になる。これは、開放環境におけるカーボンナノチューブの大量生産には非効率なシステムとなる。b)炭素原料ガス流量の増大;前記a)のように、不活性ガス流量を相対的に増大させると、炭素含有原料ガス流量を増大させる必要がある。12Kのセラミック繊維ロービングの体積が、矩形横断面を有する合成反応器の全体積に対して2000分の1であることを考慮されたい。同等の円筒状成長反応器(すなわち、矩形横断面の反応器と同じ平坦化されたセラミック繊維材料を収容できるだけの幅を有する円筒状の反応器)では、セラミック繊維材料の体積は、チャンバーの体積の17,500分の1である。例えば、CVDなどのガス蒸着プロセス(gas deposition processes)は、通常、圧力及び温度だけで制御されるが、体積は蒸着の効率に顕著な影響を与え得る。矩形反応器の場合、それでもなお過剰な体積が存在し、この過剰体積は無用の反応を促進するが、円筒状反応器はその体積が約8倍もある。このように競合する反応が発生する機会が増加するため、所望の反応が有効に生じるには、円筒状反応器チャンバーでは一層遅くなってしまう。このようなCNT成長の速度低下は連続プロセスの進行にとって問題となる。矩形反応器構成の別の利点は、矩形反応器チャンバーの高さが低いことを利用して反応器の体積を低減し、これにより体積比が改善され反応が更に効率的になるという点である。本発明のある実施形態において、矩形合成反応器の全体積は、合成反応器を通過中のセラミック繊維材料の全体積に対して僅か約3000倍にしかすぎない。更なる実施形態の中には、矩形合成反応器の全体積が、合成反応器を通過中のセラミック繊維材料の全体積に対して僅か約4000倍にしかすぎないものもある。また更なる実施形態の中には、矩形合成反応器の全体積が、合成反応器を通過中のセラミック繊維材料の全体積に対して約10,000倍未満のものがある。加えて、円筒状反応器を使用した場合、矩形横断面を有する反応器と比較すると、同じ流量比を提供するためには、より大量の炭素原料ガスが必要である点に注目されたい。当然のことながら、他の実施形態の中には、矩形ではないが比較的類似し、かつ、円形横断面を有する反応器に対して反応器体積を同様に低減する多角形状で表される横断面を有する合成反応器もある。c)問題のある温度分布;相対的に小径の反応器を用いた場合、チャンバー中心からその壁面までの温度勾配はごく僅かである。しかし、例えば、工業規模の製造に用いられるなど、サイズの増大に伴い、温度勾配は増加する。このような温度勾配は、セラミック繊維材料基材の全域で製品品質がばらつく(すなわち、製品品質が半径位置に応じて変化する)原因となる。この問題は、矩形横断面を有する反応器を用いた場合に殆ど回避される。特に、平面的な基材が用いられる場合、基材のサイズが大きくなったときに、反応器の高さを一定に維持することができる。反応器の頂部と底部との間の温度勾配は基本的にごく僅かであり、結果的に、生じる熱的な問題や製品品質のばらつきは回避される。2)ガス導入:当該技術分野では、通常、管状炉が使用されているので、一般的なCNT合成反応器は、ガスを一端に導入し、それを反応器に通して他端から引き出している。本明細書に開示される実施形態の中には、ガスが、反応器の両側板、又は反応器の頂板及び底板のいずれかを通して対称的に、反応器の中心又は対象とする成長ゾーン内に導入されるものがある。これにより、流入する原料ガスがシステムの最も高温な場所(CNTの成長が最も活発な場所)に連続的に供給されるので、全体的なCNT成長速度が向上する。このような一定のガス供給は、矩形のCNT反応器により示される成長速度の向上にとって重要な側面である。
比較的低温のパージゾーンを提供するチャンバーが矩形合成反応器の両端に従属する。出願人は、仮に高温ガスが外部環境(すなわち、反応器の外部)と接触(mix)すると、繊維材料の劣化(degradation)が増加することを究明している。低温パージゾーンは、内部システムと外部環境間の緩衝を提供する。当該技術分野で既知の標準的なCNT合成反応器の構成では、通常、基材を慎重に(かつ緩やかに)冷却することが求められる。本願の矩形CNT成長反応器の出口における低温パージゾーンは、連続的なインライン処理に必要とされるような短時間の冷却を実現する。
ある実施形態において、ホットウォール型(hot-walled)反応器は金属製であり、特にステンレス鋼が用いられる。金属、特にステンレス鋼は炭素の付着(すなわち、すす及び副生成物の形成)を受けやすいために、これは常識に反するように考えられるかもしれない。したがって、大部分のCNT反応器の構成には、付着する炭素が殆どなく、また、石英が洗浄しやすく試料の観察を容易にするため、石英反応器を使用する。しかしながら、出願人は、ステンレス鋼上におけるすす及び炭素付着物が増加することにより、より着実、より効率的、より高速、かつ、より安定的にCNTが成長すること、を見出した。理論に拘束されるものではないが、反応器内で起こるCVDプロセスでは、大気圧運転(atmospheric operation)と連動して拡散が制限されることが示されている。すなわち、触媒に「過度に供給される(overfed)」、つまり、過量の炭素が、(反応器が不完全真空下で運転している場合よりも)その相対的に高い分圧に起因して反応器システム内で得られる。結果として、開放システム(特に清浄な(clean)もの)では、過量の炭素が触媒粒子に付着して、CNTsの合成能力を低下させる。ある実施形態において、矩形反応器に「汚れが付いて(dirty)」いる、すなわち、金属製反応器壁にすすが付着している状態の場合に、矩形反応器を意図的に運転する。炭素が反応器壁上の単分子層に付着すると、炭素は、それ自体を覆って付着しやすくなる。得られる炭素の中には、この機構により「回収される(withdrawn)」ものがあるので、ラジカルの形で残っている炭素原料が、触媒を被毒させない速度でこの触媒と反応する。既存のシステムでは「清浄に(cleanly)」運転するが、連続処理のために開放状態であれば、減速した成長速度で、はるかに低い収率でしかCNTsを生成できない。
本明細書に開示されるCNT合成反応器において、触媒還元及びCNT成長のいずれもが反応器内で起こる。還元工程が個別の工程として実施されると、連続プロセスに用いるものとして十分タイムリーに行えなくなるため、このことは重要である。当該技術分野において既知の標準的なプロセスにおいて、還元工程の実施には、通常1〜12時間かかる。本発明によれば、両工程は1つの反応器内で生じるが、これは、少なくとも1つには、炭素原料ガスを導入するのが、円筒状反応器を用いる当該技術分野では標準的となっている反応器の端部ではなく、中心部であることに起因する。還元プロセスは、繊維が加熱ゾーンに入ったときに行われる。この時点までに、ガスには、触媒と反応して酸化還元反応(水素ラジカルの相互作用を介する)を起こす前に反応壁と反応して冷える時間があるということである。還元が起こるのは、この移行領域である。システム内で最も高温の等温ゾーンでCNT成長は起こり、反応器の中心近傍におけるガス入口の近位で最速の成長速度が生じる。
Claims (38)
- 巻き取り可能な寸法のセラミック繊維材料と、
前記セラミック繊維材料に結合するカーボンナノチューブと、
を含むカーボンナノチューブ浸出セラミック繊維材料を含んで構成され、
前記カーボンナノチューブの長さ、及び前記カーボンナノチューブの分布が均一であることを特徴とする組成物。 - 前記セラミック繊維材料への結合は、前記セラミック繊維材料に対する前記カーボンナノチューブの直接的な結合、前記カーボンナノチューブと前記セラミック繊維材料との間に配置された遷移金属ナノ粒子触媒を介した間接的な結合、及びこれらを混合したもの、から選択される結合モチーフを含んで構成されることを特徴とする請求項1に記載の組成物。
- 前記カーボンナノチューブは、約1ミクロンから約500ミクロンの長さを有することを特徴とする請求項1に記載の組成物。
- 前記カーボンナノチューブは、約1ミクロンから約10ミクロンの長さを有することを特徴とする請求項1に記載の組成物。
- 前記カーボンナノチューブは、約20ミクロンから約100ミクロンの長さを有することを特徴とする請求項1に記載の組成物。
- 前記カーボンナノチューブは、約100ミクロンから約500ミクロンの長さを有することを特徴とする請求項1に記載の組成物。
- 前記カーボンナノチューブの分布の均一性は、最大で1平方ミクロン当たり約15,000までのナノチューブの密度により特徴付けられる請求項1に記載の組成物。
- 前記セラミック繊維材料は、セラミックフィラメント、光ファイバー、セラミックトウ、セラミックヤーン、セラミックテープ、一方向セラミックテープ、セラミック繊維編組、セラミックロービング、セラミックロービング織物、不織セラミック繊維マット、セラミック繊維プライ、及び3次元織物構造体から選択されることを特徴とする請求項1に記載の組成物。
- 前記セラミック繊維材料は、酸化物、炭化物、窒化物、及びケイ化物から選択されることを特徴とする請求項1に記載の組成物。
- 前記セラミック繊維材料は、アルミナ又はジルコニアであることを特徴とする請求項1に記載の組成物。
- 前記セラミック繊維材料は、炭化ケイ素又は炭化ホウ素であることを特徴とする請求項1に記載の組成物。
- 前記カーボンナノチューブは、単層カーボンナノチューブ、2層カーボンナノチューブ、多層カーボンナノチューブ、及びこれらを混合したもの、からなる群より選択されることを特徴とする請求項1に記載の組成物。
- 前記カーボンナノチューブは、多層カーボンナノチューブであることを特徴とする請求項1に記載の組成物。
- 界面活性剤、静電気防止剤、潤滑剤、シロキサン、アルコキシシラン、アミノシラン、シラン、シラノール、ポリビニルアルコール、でんぷん、及びこれらを混合したもの、から選択されるサイジング剤を更に含んで構成される請求項1に記載の組成物。
- 前記サイジング剤は、シロキサンであることを特徴とする請求項13に記載の組成物。
- 前記サイジング剤は、シランであることを特徴とする請求項13に記載の組成物。
- エポキシ、ポリエステル、ビニルエステル、ポリエーテルイミド、ポリエーテルケトンケトン、ポリフタルアミド、ポリエーテルケトン、ポリエーテルエーテルケトン、ポリイミド、フェノールホルムアルデヒド、及びビスマレイミドから選択されるマトリックス材を更に含んで構成される請求項1に記載の組成物。
- 前記カーボンナノチューブ浸出セラミック繊維材料の電気抵抗率は、前記セラミック繊維材料の電気抵抗率よりも低いことを特徴とする請求項1に記載の組成物。
- 巻き取り可能な寸法のセラミック繊維材料の表面にカーボンナノチューブ形成触媒を配置することと、
前記セラミック繊維材料上にカーボンナノチューブを合成し、これにより、カーボンナノチューブ浸出セラミック繊維材料を形成することと、
を含んで構成される連続的なカーボンナノチューブ浸出プロセス。 - 前記連続的なカーボンナノチューブ浸出プロセスは、約5秒から約300秒の材料滞留時間を有することを特徴とする請求項19に記載のプロセス。
- 約5秒から約30秒の材料滞留時間により、約1ミクロンから約10ミクロンの長さを有するカーボンナノチューブが生成されることを特徴とする請求項19に記載のプロセス。
- 約30秒から約180秒の材料滞留時間により、約10ミクロンから約100ミクロンの長さを有するカーボンナノチューブが生成されることを特徴とする請求項19に記載のプロセス。
- 約180秒から約300秒の材料滞留時間により、約100ミクロンから約500ミクロンの長さを有するカーボンナノチューブが生成されることを特徴とする請求項19に記載のプロセス。
- 複数の前記セラミック繊維材料が同時に前記プロセスに通されることを特徴とする請求項19に記載のプロセス。
- 前記セラミック繊維材料上に前記触媒を配置する前に、前記セラミック繊維材料からサイジング材料を除去することを更に含んで構成される請求項19に記載のプロセス。
- 前記触媒は、鉄ベースのナノ粒子触媒であることを特徴とする請求項19に記載のプロセス。
- 前記セラミック繊維材料上に前記触媒を配置する工程には、前記セラミック繊維材料上に対する溶液の、スプレー、浸漬コーティング、又は気相蒸着が含まれることを特徴とする請求項19に記載のプロセス。
- 前記カーボンナノチューブを合成する工程がCVD成長を含んで構成されることを特徴とする請求項19に記載のプロセス。
- 前記カーボンナノチューブ浸出セラミック繊維材料にサイジング剤を適用することを更に含んで構成される請求項19に記載のプロセス。
- 前記カーボンナノチューブ浸出セラミック繊維材料にマトリックス材を適用することを更に含んで構成される請求項19に記載のプロセス。
- 前記セラミック繊維材料の少なくとも1つの性質である第1性質を変化させるために選択される第1の量の第1種カーボンナノチューブを前記セラミック繊維材料上に合成することと、
前記セラミック繊維材料の少なくとも1つの性質である第2性質を変化させるために選択される第2の量の第2種カーボンナノチューブを前記セラミック繊維材料上に合成することと、
を更に含んで構成される請求項19に記載のプロセス。 - 前記第1の量は前記第2の量と異なることを特徴とする請求項31に記載のプロセス。
- 前記第1の量は前記第2の量と同一であることを特徴とする請求項31に記載のプロセス。
- 前記第1種カーボンナノチューブは前記第2種カーボンナノチューブと同一であることを特徴とする請求項31に記載のプロセス。
- 前記第1種カーボンナノチューブは前記第2種カーボンナノチューブと異なることを特徴とする請求項31に記載のプロセス。
- 前記第1性質は前記第2性質と同一であることを特徴とする請求項31に記載のプロセス。
- 前記第1性質は前記第2性質と異なることを特徴とする請求項31に記載のプロセス。
- 前記少なくとも1つの性質である第1性質、及び前記少なくとも1つの性質である第2性質は、引張強度、ヤング率、せん断強度、剛性率、靭性、圧縮強度、圧縮係数、密度、EM波吸収率又は反射率、音響透過率、電気伝導度、及び熱伝導度からなる群より独立に選択されることを特徴とする請求項31に記載のプロセス。
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Also Published As
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BR112012010412A2 (pt) | 2016-03-08 |
CA2778413A1 (en) | 2011-05-05 |
EP2496741A1 (en) | 2012-09-12 |
KR20120101418A (ko) | 2012-09-13 |
CN102639771A (zh) | 2012-08-15 |
AU2010313613A1 (en) | 2012-05-17 |
EP2496741A4 (en) | 2013-07-17 |
ZA201203086B (en) | 2013-01-30 |
US20120189846A1 (en) | 2012-07-26 |
WO2011053457A1 (en) | 2011-05-05 |
US20110168083A1 (en) | 2011-07-14 |
CN102639771B (zh) | 2015-06-17 |
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