JP2013502726A5 - - Google Patents

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Publication number
JP2013502726A5
JP2013502726A5 JP2012525726A JP2012525726A JP2013502726A5 JP 2013502726 A5 JP2013502726 A5 JP 2013502726A5 JP 2012525726 A JP2012525726 A JP 2012525726A JP 2012525726 A JP2012525726 A JP 2012525726A JP 2013502726 A5 JP2013502726 A5 JP 2013502726A5
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Japan
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substrate
particles
resist
array
layer
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JP2012525726A
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Japanese (ja)
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JP2013502726A (ja
JP5716026B2 (ja
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Priority claimed from US12/859,606 external-priority patent/US8912097B2/en
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Publication of JP2013502726A5 publication Critical patent/JP2013502726A5/ja
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JP2012525726A 2009-08-20 2010-08-20 基板のパターニング方法及びそのシステム Expired - Fee Related JP5716026B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23538309P 2009-08-20 2009-08-20
US61/235,383 2009-08-20
US12/859,606 US8912097B2 (en) 2009-08-20 2010-08-19 Method and system for patterning a substrate
US12/859,606 2010-08-19
PCT/US2010/046146 WO2011022635A2 (en) 2009-08-20 2010-08-20 Methods and system for patterning a substrate

Publications (3)

Publication Number Publication Date
JP2013502726A JP2013502726A (ja) 2013-01-24
JP2013502726A5 true JP2013502726A5 (enExample) 2013-08-22
JP5716026B2 JP5716026B2 (ja) 2015-05-13

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JP2012525726A Expired - Fee Related JP5716026B2 (ja) 2009-08-20 2010-08-20 基板のパターニング方法及びそのシステム

Country Status (6)

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US (1) US8912097B2 (enExample)
JP (1) JP5716026B2 (enExample)
KR (1) KR101662028B1 (enExample)
CN (1) CN102498543B (enExample)
TW (1) TW201129882A (enExample)
WO (1) WO2011022635A2 (enExample)

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US9411237B2 (en) * 2013-03-14 2016-08-09 Applied Materials, Inc. Resist hardening and development processes for semiconductor device manufacturing
US9541846B2 (en) * 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
CN104517813A (zh) * 2013-09-29 2015-04-15 中芯国际集成电路制造(上海)有限公司 双重图形的形成方法
US20150187915A1 (en) * 2013-12-26 2015-07-02 Samsung Electronics Co., Ltd. Method for fabricating fin type transistor
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JP2015141929A (ja) 2014-01-27 2015-08-03 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
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US9941125B2 (en) * 2015-08-31 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
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US9984889B2 (en) * 2016-03-08 2018-05-29 Varian Semiconductor Equipment Associates, Inc. Techniques for manipulating patterned features using ions
KR102216380B1 (ko) * 2016-12-08 2021-02-17 주식회사 원익아이피에스 반도체 소자의 패터닝 방법
US10545408B2 (en) 2017-08-18 2020-01-28 Varian Semiconductor Equipment Associates, Inc. Performance improvement of EUV photoresist by ion implantation
US10354874B2 (en) 2017-11-14 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Directional processing to remove a layer or a material formed over a substrate
US10312089B1 (en) * 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US20190198325A1 (en) 2017-12-22 2019-06-27 International Business Machines Corporation Extreme ultraviolet (euv) lithography patterning methods utilizing euv resist hardening
CN110528003B (zh) * 2018-05-25 2020-10-27 北京航空航天大学 一种涂层的复合制备方法
KR102863979B1 (ko) * 2019-04-08 2025-09-23 어플라이드 머티어리얼스, 인코포레이티드 포토레지스트 프로파일들을 개질하고 임계 치수들을 튜닝하기 위한 방법들
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