JP2013258408A - トレンチ及びビアの断面形状を変形させる方法及び装置 - Google Patents
トレンチ及びビアの断面形状を変形させる方法及び装置 Download PDFInfo
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Abstract
【解決手段】トレンチ及びビアの断面形状を、トレンチ及びビアへの充填を行なう前に変形させる方法及び装置に関するもので、トレンチ構造22をエッチャント26に曝すことにより、犠牲層25を形成してトレンチ構造の上部開口部24を閉塞する。一実施形態では、エッチャントは、第1材料23と反応して犠牲層を形成する副生成物を生成することにより、第1材料を除去するように調製される。
【選択図】図2
Description
NF3+3NH3→NH4F+NH4F・HF+N2
6NH4F+SiO2→(NH4)2SiF6+2H2O+4NH3
(NH4)2SiF6+熱→2NH3+2HF+SiF4
Claims (15)
- 基板を処理する方法であって、
側壁に第1材料を含むトレンチ構造を前記基板に形成する工程、
前記トレンチ構造の上部開口部を広げる工程であって、
前記基板をエッチャントに曝すことにより、犠牲層を形成して前記トレンチ構造の前記上部開口部を閉塞することであって、前記犠牲層が、前記エッチャントと前記第1材料との反応副生成物を含むことと、
前記基板を前記エッチャントに曝し続けることにより、前記エッチャントを前記第1材料と更に反応させることと、
前記犠牲層を前記基板から除去することと
を含む、上部開口部広げる工程
を含む方法。 - 前記エッチャントが、第1材料と反応して前記副生成物を生成することにより前記第1材料を除去するように調製される、請求項1に記載の方法。
- 前記犠牲層を形成することが、前記エッチャントから発生したプラズマに前記基板を曝すことを含む、請求項1に記載の方法。
- 第2材料を堆積させて、拡幅開口部を有する前記トレンチ構造に充填する工程を更に含む、請求項1に記載の方法。
- 前記犠牲層を形成することが、
前記副生成物で前記上部開口部を閉塞することができる前記エッチャントの第1流量を決定することと、
前記エッチャントを前記第1流量で流して、前記上部開口部を閉塞することと
を含む、請求項4に記載の方法。 - 前記上部開口部を広げる工程が、更に、前記第1流量を増やして拡幅量を大きくすることを含む、請求項5に記載の方法。
- 前記第1材料が、窒化シリコン、酸化シリコン、及びこれらの材料の組み合わせのうちの1つを含み、前記エッチャントが、フッ素、窒素、及び水素を含むソースガスを含む、請求項5に記載の方法。
- 前記エッチャントが、三フッ化窒素(NF3)及びアンモニア(NH3)の混合物、三フッ化窒素(NF3)及び水素(H2)の混合物、三フッ化窒素(NF3)、水素(H2)、及び窒素(N2)の混合物、三フッ化窒素(NF3)及びフッ化水素(HF)の混合物、他の同様のフッ素、窒素、及び水素を含むソースガスのうちの1つを含む、請求項7に記載の方法。
- 前記第2材料が、配線用導電材料、相変化メモリセルに充填されるゲルマニウム−セレン−テルル(GST)、及び金属ゲートに充填されるゲート金属のうちの1つを含む、請求項7に記載の方法。
- 前記犠牲層を除去することが、前記基板をアニールすることを含む、請求項7に記載の方法。
- 前記トレンチ構造を形成する工程が、
トレンチを前記基板に形成することと、
前記第1材料を含むライナー層を、前記基板を覆うように堆積させることと
を含む、請求項1に記載の方法。 - 基板を処理する方法であって、
トレンチ構造を有する前記基板を処理チャンバ内に配置する工程であって、前記トレンチ構造の側壁が第1材料を含む工程と、
第1処理ガスを前記処理チャンバに流すことにより、犠牲層を形成して前記トレンチ構造の上部開口部を閉塞する工程と、
前記上部開口部を閉塞した後、前記第1処理ガスを流し続ける工程と、
前記基板をアニールして前記犠牲層を前記トレンチ構造から除去する工程と
を含む方法。 - 副生成物で前記トレンチ構造の前記上部開口部を閉塞できる前記第1処理ガスの第1流量を決定する工程であって、前記第1処理ガスが、前記第1材料と反応して前記副生成物を生成することにより前記第1材料を除去するように調製される工程を更に含む、請求項12に記載の方法。
- 前記第1流量を決定する工程が、
前記犠牲層を除去した後に、前記第1流量を増やして上部開口部の幅を広げることと、
前記犠牲層を除去した後に、前記第1流量を減らして上部開口部の幅を狭めることと
を含む、請求項13に記載の方法。 - 前記第1処理ガスが、三フッ化窒素(NF3)及びアンモニア(NH3)の混合物、三フッ化窒素(NF3)及び水素(H2)の混合物、三フッ化窒素(NF3)、水素(H2)、及び窒素(N2)の混合物、三フッ化窒素(NF3)及びフッ化水素(HF)の混合物、他の同様のフッ素、窒素、及び水素を含むソースガスのうちの1つを含む、請求項14に記載の方法。
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