JP2013251406A - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000002344 surface layer Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 description 20
- 230000004888 barrier function Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】炭化珪素基板基体の表面層には、p型領域3、p-型領域4およびp+型領域5が選択的に設けられている。p型領域3とp-型領域4は、活性領域を囲む耐圧構造部に設けられる。p+型領域5は、活性領域に設けられ、JBS構造を構成する。p-型領域4は、p型領域3を囲み接合終端(JTE)構造を構成する。ショットキー電極7は、n型炭化珪素エピタキシャル層2とショットキー接合を形成する。ショットキー電極7は、p型領域3の一部を覆う層間絶縁膜6上に張り出しており、この張り出した部分はフィールドプレートとして機能する。p+型領域5は所定以上のアクセプタ濃度を有し、順方向サージ電流を大きくできる。
【選択図】図1
Description
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態においては、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いて作製された炭化珪素半導体装置について、接合障壁ショットキー(JBS:Junction Barrier Schottky)構造のダイオードを例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構成を示す断面図である。図1に示すように、実施の形態にかかる炭化珪素半導体装置は、n+型炭化珪素基板(ワイドバンドギャップ半導体基板)1の主面上にn型炭化珪素エピタキシャル層(ワイドバンドギャップ半導体堆積層)2が堆積されている。
この場合、正バイアスVFの増加により、順方向電流IFも増加し、発熱する。最終的には、自己発熱により、ショットキー接合での反応、例えば、Ti+SiC→TiC+Siなどで合金化してショットキー障壁高さ(φB)が低くなる。これにより、順方向電流IFが増加し、自己発熱し、順方向電流IFが増加する正のフィードバックが生じ破壊に至る。この際の特性は、図2中、0→Q→R→Aの軌跡で表される。
ある逆バイアス電圧VKにて、ショットキー電極7とp+型領域5との逆バイアスに印加されているショットキー界面において、アバランシェ降伏により正孔がp+型領域5に流れる。この正孔がp+型領域5からn型炭化珪素エピタキシャル層2に注入され、伝導度変調により、正バイアスVFが低減する。このため、以降は、順方向電流IFの増加により図中RからSに至るように正バイアスVFが低減し、R−S−Bの軌跡となる。このときの発熱量は、P=V1I1=V2I2により、一定となる。そして、I2=(V1/V2)I1>I1となるため、順方向(サージ)電流IF,SMは向上する。
図3は、p+型領域のアクセプタ濃度と逆バイアス電圧との関係を示す図表である。上記2.において、逆バイアス電圧VK<V1となることが重要である。p+型領域5のアクセプタ濃度(NA)に依存する。NAが大であるほど、逆バイアス電圧VKは減少する。逆バイアス電圧VK=V1=5Vとしたとき、図3に基づき、逆バイアス電圧VKとアクセプタ濃度NAの関係を導出する。図5において、逆バイアス電圧VKを5V以下とするために、NA>8×1017(cm-3)すればよい。ここで、エッジのp型領域3は、p-型の領域であってもよい。
図4は、活性領域周辺部(エッジ部)に設けられる活性領域を囲む耐圧構造部のp+型領域43を示す断面図である。図4に示すように、エッジにp+型領域43、p型領域44、p-型領域45を設けることにより、逆バイアス電圧VK<V1で正孔がp+型領域43に流入する。エッジ部にp+型領域43を設けない場合、活性領域に正孔が注入されるが、ショットキー電極7の終端にp+型領域43を設けると、隣接するエッジ部のp型領域44、p-型領域45に正孔が流れて、n型炭化珪素エピタキシャル層2への正孔注入領域が活性部とエッジ部の両方となる。これにより、伝導度変調効果がより大きな面積で得られるようになり、より低抵抗化できるようになる。この構成によれば、図2に示す0→Q→R−S−Cの軌跡の特性が得られる。そして、I3=(V2/V3)I2>I2となり、さらに順方向サージ電流IF,SMを増加できる。
2 n型炭化珪素エピタキシャル層
3 p型領域
4 p-型領域
5 p+型領域
6 層間絶縁膜
7 ショットキー電極
8 電極パッド
9 保護膜
10 裏面電極
Claims (3)
- 第1導電型ワイドバンドギャップ半導体基板と、
前記第1導電型ワイドバンドギャップ半導体基板の表面に堆積された、前記第1導電型ワイドバンドギャップ半導体基板よりも不純物濃度の低い第1導電型ワイドバンドギャップ半導体堆積層と、
前記第1導電型ワイドバンドギャップ半導体堆積層の、前記第1導電型ワイドバンドギャップ半導体基板側に対して反対側の表面層に選択的に設けられた第1の第2導電型半導体領域と、
前記第1導電型ワイドバンドギャップ半導体堆積層とショットキー接合を形成する金属膜と、前記第1の第2導電型半導体領域とで構成された素子構造と、
前記第1導電型ワイドバンドギャップ半導体堆積層の、前記第1導電型ワイドバンドギャップ半導体基板側に対して反対側の表面層に選択的に設けられ、前記素子構造の周辺部を囲む第2の第2導電型半導体領域と、
前記第2の第2導電型半導体領域の周辺部を囲み接合終端構造を構成する、第3の第2導電型半導体領域と、
を備え、
前記第1または第2の第2導電型半導体領域は、所定以上のアクセプタ濃度を有することを特徴とする炭化珪素半導体装置。 - 前記第1または第2の第2導電型半導体領域の前記アクセプタ濃度は、8×1017(cm-3)より大きいことを特徴とする請求項1に記載の炭化珪素半導体装置。
- 第1導電型ワイドバンドギャップ半導体基板の表面に、前記第1導電型ワイドバンドギャップ半導体基板よりも不純物濃度の低い第1導電型ワイドバンドギャップ半導体堆積層を堆積する工程と、
前記第1導電型ワイドバンドギャップ半導体堆積層の、前記第1導電型ワイドバンドギャップ半導体基板側に対して反対側の表面層に、第1の第2導電型半導体領域を選択的に形成する工程と、
前記第1導電型ワイドバンドギャップ半導体堆積層とショットキー接合を形成する金属膜と、前記第1の第2導電型半導体領域とで素子構造を形成する工程と、
前記第1導電型ワイドバンドギャップ半導体堆積層の表面層に、前記第1の第2導電型半導体領域の周辺部を囲むように、第2の第2導電型半導体領域を選択的に形成する工程と、
前記第1導電型ワイドバンドギャップ半導体堆積層の表面層に、前記第2の第2導電型半導体領域の周辺部を囲み接合終端構造を構成する、前記第2の第2導電型半導体領域よりも不純物濃度の低い第3の第2導電型半導体領域を選択的に形成する工程と、
を含み、
前記第1または第2の第2導電型半導体領域は、所定以上のアクセプタ濃度を有することを特徴とする炭化珪素半導体装置の製造方法。
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JP2012125254A JP6206862B2 (ja) | 2012-05-31 | 2012-05-31 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US14/404,827 US10090417B2 (en) | 2012-05-31 | 2013-03-18 | Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device |
PCT/JP2013/057747 WO2013179728A1 (ja) | 2012-05-31 | 2013-03-18 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
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JP2018129537A (ja) * | 2018-04-16 | 2018-08-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
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JP2015213110A (ja) * | 2014-05-01 | 2015-11-26 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
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