JP2013236365A - アイソレータ回路及び半導体装置 - Google Patents
アイソレータ回路及び半導体装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- General Physics & Mathematics (AREA)
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Abstract
【解決手段】例えば、外部にデータ保持部を別途設けることなくアイソレータ回路内にデータ保持部を設け、出力する側の論理回路に入力されるデータを該データ保持部に記憶する。該データ保持部は、例えば、オフ電流が小さいトランジスタとバッファにより形成されればよい。該バッファは、例えば、インバータ回路とクロックドインバータ回路を用いて形成することができる。
【選択図】図1
Description
本実施の形態では、本発明の一態様であるアイソレータ回路について、図1乃至図5を参照して説明する。
本実施の形態では、本発明の一態様である半導体装置の構造の一例について説明する。
102 第1の端子
104 第2の端子
106 第1のトランジスタ
108 第1のバッファ
110 第2のバッファ
112 第2のトランジスタ
114 端子
116 端子
118 端子
120 端子
150 第1の論理回路
152 第2の論理回路
200 回路
202 第1の端子
204 第2の端子
206 第1のトランスミッションゲート
208 第1のトランジスタ
210 第2のトランジスタ
212 第2のトランスミッションゲート
214 第1の制御端子
216 第2の制御端子
218 端子
220 端子
222 端子
224 端子
226 第1の制御端子
228 第2の制御端子
250 回路
252 第1の端子
254 第2の端子
256 第1の論理積回路
258 第2の論理積回路
260 端子
262 端子
300 回路
302 第1の端子
304 第2の端子
306 第1のトランジスタ
308 第2のトランジスタ
310 第3の端子
312 論理否定回路
314 第3のトランジスタ
316 第4のトランジスタ
318 第5のトランジスタ
320 第6のトランジスタ
400 半導体装置
402 第1の論理回路
404 第1のアイソレータ回路
406 第2の論理回路
408 第2のアイソレータ回路
410 第3の論理回路
412 第3のアイソレータ回路
414 信号線
500 信号線
502 第1の端子
504 第2の端子
600 素子被形成層
602 絶縁層
604 半導体層
606a 領域
606b 領域
608 チャネル形成領域
610 絶縁層
612 導電層
614a 絶縁層
614b 絶縁層
616 絶縁層
618a 導電層
618b 導電層
620 絶縁層
650 素子被形成層
652 導電層
654 絶縁層
656 絶縁層
658 半導体層
660a 導電層
660b 導電層
662a 導電層
662b 導電層
664 絶縁層
700 トランジスタ
702 トランジスタ
704 基板
706 絶縁層
708 単結晶シリコン層
710 導電層
712 絶縁層
714 絶縁層
716 絶縁層
718 導電層
720 絶縁層
Claims (5)
- 第1及び第2の端子と、第1及び第2のトランジスタと、第1及び第2のバッファと、を有し、
前記第1の端子は、前記第1のトランジスタのソース及びドレインの一方と、前記第2のバッファの出力端子に電気的に接続され、
前記第1のトランジスタのソース及びドレインの他方は、前記第1のバッファの入力端子に電気的に接続され、
前記第2のバッファの入力端子は、前記第2のトランジスタのソース及びドレインの一方に電気的に接続され、
前記第2の端子は、前記第1のバッファの出力端子と、前記第2のトランジスタのソース及びドレインの他方に電気的に接続され、
前記第1及び第2のトランジスタのオフ電流は、チャネル幅1μmあたり1×10−17A以下であることを特徴とするアイソレータ回路。 - 請求項1において、
前記第1及び第2のバッファ回路にはインバータ及びクロックドインバータが設けられていることを特徴とするアイソレータ回路。 - 請求項1または請求項2において、
前記第1及び第2のトランジスタは、チャネルが酸化物半導体層により形成されることを特徴とするアイソレータ回路。 - 論理回路と信号線が、請求項1乃至請求項3のいずれか一に記載のアイソレータ回路を介して電気的に接続されていることを特徴とする半導体装置。
- 請求項1乃至請求項3のいずれか一に記載のアイソレータ回路と、論理回路と、をそれぞれ複数有し、
前記論理回路の一は、前記アイソレータ回路の一を介して信号線に電気的に接続されていることを特徴とする半導体装置。
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JP2013081959A JP6214904B2 (ja) | 2012-04-13 | 2013-04-10 | アイソレータ回路及び半導体装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016212107A (ja) * | 2015-05-11 | 2016-12-15 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法、ならびにタイヤおよび移動体 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6396671B2 (ja) | 2013-04-26 | 2018-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6106024B2 (ja) * | 2013-05-21 | 2017-03-29 | 株式会社ジャパンディスプレイ | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
US9627275B1 (en) * | 2015-10-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Hybrid semiconductor structure on a common substrate |
CN109478883A (zh) | 2016-07-19 | 2019-03-15 | 株式会社半导体能源研究所 | 半导体装置 |
US10120470B2 (en) | 2016-07-22 | 2018-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device |
WO2018122658A1 (en) | 2016-12-27 | 2018-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11538804B2 (en) * | 2019-01-09 | 2022-12-27 | Intel Corporation | Stacked integration of III-N transistors and thin-film transistors |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59225422A (ja) * | 1983-06-03 | 1984-12-18 | Toshiba Corp | 双方向性バス・バツフア |
JPH08106345A (ja) * | 1994-10-05 | 1996-04-23 | Fujitsu Ltd | 異電圧素子間インタフェース装置 |
US20050093577A1 (en) * | 2003-11-04 | 2005-05-05 | Liem Nguyen | Multiplexer circuits |
US7287171B1 (en) * | 2004-03-08 | 2007-10-23 | Altera Corporation | Systems and methods for reducing static and total power consumption in programmable logic device architectures |
WO2008111406A1 (ja) * | 2007-03-09 | 2008-09-18 | Nec Corporation | コンフィギュラブル回路およびコンフィギュレーション方法 |
US20100079166A1 (en) * | 2008-09-26 | 2010-04-01 | Chan Andrew Ka Lab | Programmable Signal Routing Systems Having Low Static Leakage |
JP2011129896A (ja) * | 2009-11-20 | 2011-06-30 | Semiconductor Energy Lab Co Ltd | 不揮発性のラッチ回路及び論理回路並びにそれを用いた半導体装置 |
JP2011171723A (ja) * | 2010-01-20 | 2011-09-01 | Semiconductor Energy Lab Co Ltd | 信号処理回路、及び信号処理回路の駆動方法 |
Family Cites Families (107)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
EP1618712A2 (en) * | 2003-04-30 | 2006-01-25 | Analog Devices, Inc. | Signal isolators using micro-transformers |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
EP2453480A2 (en) | 2004-11-10 | 2012-05-16 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
RU2358354C2 (ru) | 2004-11-10 | 2009-06-10 | Кэнон Кабусики Кайся | Светоизлучающее устройство |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
KR100911698B1 (ko) | 2004-11-10 | 2009-08-10 | 캐논 가부시끼가이샤 | 비정질 산화물을 사용한 전계 효과 트랜지스터 |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI481024B (zh) | 2005-01-28 | 2015-04-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI472037B (zh) | 2005-01-28 | 2015-02-01 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
EP1998374A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
CN101667544B (zh) | 2005-11-15 | 2012-09-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
KR101316788B1 (ko) | 2007-01-08 | 2013-10-11 | 삼성전자주식회사 | 반도체 집적 회로 장치 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
US8446171B2 (en) | 2011-04-29 | 2013-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing unit |
TWI591611B (zh) | 2011-11-30 | 2017-07-11 | 半導體能源研究所股份有限公司 | 半導體顯示裝置 |
WO2013111757A1 (en) | 2012-01-23 | 2013-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8995218B2 (en) | 2012-03-07 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9372694B2 (en) | 2012-03-29 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Reducing data backup and recovery periods in processors |
-
2013
- 2013-04-05 US US13/857,185 patent/US9030232B2/en active Active
- 2013-04-10 JP JP2013081959A patent/JP6214904B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59225422A (ja) * | 1983-06-03 | 1984-12-18 | Toshiba Corp | 双方向性バス・バツフア |
JPH08106345A (ja) * | 1994-10-05 | 1996-04-23 | Fujitsu Ltd | 異電圧素子間インタフェース装置 |
US20050093577A1 (en) * | 2003-11-04 | 2005-05-05 | Liem Nguyen | Multiplexer circuits |
US7287171B1 (en) * | 2004-03-08 | 2007-10-23 | Altera Corporation | Systems and methods for reducing static and total power consumption in programmable logic device architectures |
WO2008111406A1 (ja) * | 2007-03-09 | 2008-09-18 | Nec Corporation | コンフィギュラブル回路およびコンフィギュレーション方法 |
US20100079166A1 (en) * | 2008-09-26 | 2010-04-01 | Chan Andrew Ka Lab | Programmable Signal Routing Systems Having Low Static Leakage |
JP2011129896A (ja) * | 2009-11-20 | 2011-06-30 | Semiconductor Energy Lab Co Ltd | 不揮発性のラッチ回路及び論理回路並びにそれを用いた半導体装置 |
JP2011171723A (ja) * | 2010-01-20 | 2011-09-01 | Semiconductor Energy Lab Co Ltd | 信号処理回路、及び信号処理回路の駆動方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016212107A (ja) * | 2015-05-11 | 2016-12-15 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法、ならびにタイヤおよび移動体 |
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