JP2013220476A - 液相拡散接合の合金形成制御 - Google Patents
液相拡散接合の合金形成制御 Download PDFInfo
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 43
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- 238000000034 method Methods 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims description 118
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- 230000008021 deposition Effects 0.000 claims description 9
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
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- 230000008023 solidification Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000012071 phase Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 23
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- 230000003044 adaptive effect Effects 0.000 abstract 2
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 14
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 12
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- 229910017927 Cu—Sn Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 5
- 229910001128 Sn alloy Inorganic materials 0.000 description 4
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- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 230000002459 sustained effect Effects 0.000 description 1
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- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/83825—Solid-liquid interdiffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/8383—Solid-solid interdiffusion
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
【解決手段】厚さ制限の依存性が低下した実質的に均一な接合ラインを製造するための迅速で信頼できる方法を可能にする接合構造が開示される。また、このシステムは、パワーエレクトロニクスにおける性能を目的とする接合ラインを生成する。このシステムは、種々の構造に高度に適合でき、製造の選択肢を与えることができる。これは、多様な製造の選択を可能にし、外部条件への依存を少なくする。開示されるシステムは、少なくともウェハ対ウェハ、鋳型対ウェハ、鋳型対基板、又は鋳型対鋳型の接合に適用可能である。
【選択図】図1
Description
Claims (20)
- 合金形成の制御のための液相拡散接合法であって、
第2材料よりも高い溶融温度を有する第1材料の表面の特徴を変更して、第1材料の表面積を増加させる工程、
第1材料の変更された表面の特徴が第2材料の表面と接触するように第1材料と第2材料を配置する工程、
温度を第2材料の接合温度まで上げて部分的な液体の拡散を引き起こす工程、
部分的に拡散した材料を第2材料と反応させ、等温凝固により合金を形成する工程、及び
合金の実質的に均一な接合ラインを生成する工程
を含む、液相拡散接合法。 - 第1の第1材料部分と第2の第1材料部分の間に第2材料を挟み込んで配置する工程をさらに含む、請求項1に記載の液相拡散接合法。
- 第1の材料部分と第3の材料部分の間に第2材料を挟み込んで配置する工程をさらに含む、請求項1に記載の液相拡散接合法。
- 第1材料と第2材料に約3kPa〜約1MPaの圧縮力を加える工程をさらに含む、請求項1に記載の液相拡散接合法。
- 接合ラインが約5μm〜約50μmである、請求項1に記載の液相拡散接合法。
- 表面の特徴の変更が、第1材料及び第2材料の少なくとも一方をエッチングすることを含む、請求項1に記載の液相拡散接合法。
- エッチングが、化学エッチング、ドライエッチング、機械的研磨、機械的スクライビング、及び高エネルギービームエッチングのうち少なくとも1つによって達成される、請求項6に記載の液相拡散接合法。
- 表面の特徴の変更が、第1材料又は第2材料の少なくとも一方に堆積を行うことを含む、請求項1に記載の液相拡散接合法。
- 堆積が、材料の堆積、パターン転写、及び材料の成長の少なくとも1つによって達成される、請求項8に記載の液相拡散接合法。
- 表面の特徴の変更が、第1材料又は第2材料の少なくとも一方に堆積を行うことを含む、請求項1に記載の液相拡散接合法。
- 第1材料の表面の特徴の変更を実質的に鏡のように反映するように、第2材料の表面の特徴を変更する工程をさらに含む、請求項1に記載の液相拡散接合法。
- 表面の特徴の変更が、ランダムなパターン、規則的なパターン、又は規則的なパターンとランダムなパターンの組み合わせのうち少なくとも1つにおいて表面の特徴を変更することを含む、請求項1に記載の液相拡散接合法。
- 第2材料と接触している第1材料の面全体の表面の特徴の種類を変更する工程をさらに含む、請求項1に記載の液相拡散接合法。
- 第1材料と第2材料の少なくとも一方が、銅、スズ、銀、インジウム、金、ニッケル、及びホウ素である、請求項1に記載の液相拡散接合法。
- 合金の形成が、他の可能性のある合金の導電性と比較した合金の導電性に基づいて選択される、請求項1に記載の液相拡散接合法。
- 接合プロセスが約30分〜約2時間である、請求項1に記載の液相拡散接合法。
- パワーエレクトロニクスの作成のために使用される、請求項1に記載の液相拡散接合法。
- ハイブリッド自動車、プラグインハイブリッド自動車、及び電気自動車の少なくとも1つのために使用される、請求項1に記載の液相拡散接合法。
- 第2材料よりも高い溶融温度を有する第1材料の表面の特徴を変更して、第1材料の表面積を増加させる工程、
液相拡散接合のために、第1材料の変更された表面の特徴が第2材料の表面と接触するように、第1材料の第1部分と第1材料の第2部分の間に第2材料を挟み込んで配置する工程、及び
液相拡散接合により合金材料の実質的に均一な接合ラインを生成する工程
を含む、方法。 - 液相拡散接合により合金材料の実質的に均一な接合ラインを生成するためのシステムであって、
第1材料の第1部分と第1材料の第2部分の間に第2材料を挟み込んで配置する工程であって、別の材料に接触している第1材料及び第2材料の少なくとも一方の表面の特徴を変更して表面積を増加させる工程、及び
液相拡散接合により合金の実質的に均一な接合ラインを生成する工程であって、選択される合金が合金の導電性に基づく工程
を含む、システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/448,632 | 2012-04-17 | ||
US13/448,632 US10058951B2 (en) | 2012-04-17 | 2012-04-17 | Alloy formation control of transient liquid phase bonding |
Publications (2)
Publication Number | Publication Date |
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JP2013220476A true JP2013220476A (ja) | 2013-10-28 |
JP5676670B2 JP5676670B2 (ja) | 2015-02-25 |
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JP2013062083A Active JP5676670B2 (ja) | 2012-04-17 | 2013-03-25 | 液相拡散接合の合金形成制御 |
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JP (1) | JP5676670B2 (ja) |
Cited By (2)
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DE102016224068A1 (de) | 2015-12-21 | 2018-06-07 | Mitsubishi Electric Corporation | Leistungshalbleiteranordnung und Verfahren zum Herstellen derselben |
JP2021526727A (ja) * | 2019-05-07 | 2021-10-07 | ライトメッド (ユーエスエー) インク | 半導体デバイスと熱拡散マウントとの銀−インジウム過渡液相接合方法および銀−インジウム過渡液相接合ジョイントを有する半導体構造 |
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US10541152B2 (en) | 2014-07-31 | 2020-01-21 | Skyworks Solutions, Inc. | Transient liquid phase material bonding and sealing structures and methods of forming same |
US10568213B2 (en) | 2014-07-31 | 2020-02-18 | Skyworks Solutions, Inc. | Multilayered transient liquid phase bonding |
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