US20130270326A1 - Alloy formation control of transient liquid phase bonding - Google Patents
Alloy formation control of transient liquid phase bonding Download PDFInfo
- Publication number
- US20130270326A1 US20130270326A1 US13/448,632 US201213448632A US2013270326A1 US 20130270326 A1 US20130270326 A1 US 20130270326A1 US 201213448632 A US201213448632 A US 201213448632A US 2013270326 A1 US2013270326 A1 US 2013270326A1
- Authority
- US
- United States
- Prior art keywords
- liquid phase
- transient liquid
- phase bonding
- bonding method
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000956 alloy Substances 0.000 title claims description 47
- 229910045601 alloy Inorganic materials 0.000 title claims description 45
- 239000007791 liquid phase Substances 0.000 title claims description 30
- 230000001052 transient effect Effects 0.000 title claims description 30
- 230000015572 biosynthetic process Effects 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims description 118
- 230000008569 process Effects 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 239000011135 tin Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 230000002045 lasting effect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 22
- 239000000758 substrate Substances 0.000 abstract description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 15
- 229910018082 Cu3Sn Inorganic materials 0.000 description 13
- 229910018471 Cu6Sn5 Inorganic materials 0.000 description 13
- 229910017755 Cu-Sn Inorganic materials 0.000 description 10
- 229910017927 Cu—Sn Inorganic materials 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 201000003373 familial cold autoinflammatory syndrome 3 Diseases 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/83825—Solid-liquid interdiffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/8383—Solid-solid interdiffusion
Definitions
- the present disclosure relates to alloy formation, and more particularly, to alloy formation using transient liquid phase bonding in power electronics.
- Welding has been used in the automotive industries for years. Welding is the joining together of materials (typically metals or thermoplastics), usually by a fusion process. Design of complex components is often based on the concept of the “weakest link” limiting structural performance. The “ideal joint” would exhibit all of the characteristics of the bulk material comprising the structures being joined. Such a joint is by no means simple to produce.
- the above needs are successfully met via the disclosed system and method.
- the present disclosure is generally directed to control of alloy formation via transient liquid phase bonding in power electronics.
- a technology to improve bonding quality and fabrication reliability of bonding technologies for electronic devices is disclosed. This method is especially useful for bonding technologies generating multiple compounds (or alloys).
- This disclosure describes a new bonding technique enabling fast and reliable fabrication of a substantially homogeneous bondline with reduced dependency of a thickness limitation.
- a substantially homogeneous bondline made of substantially a single alloy without a thickness limitation and excessive bonding time can be achieved using the techniques disclosed herein.
- a (more) suitable bondline providing better and targeted performance for power electronics may also be achieved.
- This system is highly adaptable as various structures and fabrication options may be implemented. This enables a diverse selection of fabrication techniques and creates less dependency on outside conditions. This process can be used over a wide field of applications. Moreover, for instance, this process can be used on any application associated with power electronics. For instance, this system is at least applicable to wafer-to-wafer, die-to-wafer, die-to-substrate, or die-to-die bonding. Moreover, this system is compatible with conventional fabrication techniques.
- FIG. 1 depicts an exemplary embodiment of transient liquid phase bonding
- FIG. 2 depicts a phase diagram of Cu—Sn TLP bonding
- FIG. 3 depicts an example of Cu—Sn TLP bonding with non-homogeneous bondlines
- FIG. 4A illustrates an exemplary embodiment of TLP bonding without altering the surface properties of the materials
- FIG. 4B illustrates an exemplary embodiment of TLP bonding comprising altered surface properties of at least one of the materials
- FIG. 5 illustrates an exemplary embodiment of a modified bondline
- FIGS. 6A-6F illustrate exemplary embodiments of two dimensional altered surface features of at least one of the materials
- FIGS. 7A-7C illustrate exemplary embodiments of three dimensional variations associated with the altered surface features
- FIGS. 8A-8C illustrate a reflow of one material into another material with surface features altered
- FIG. 9A illustrates an exemplary embodiment of a material deposition method
- FIG. 9B illustrates an exemplary embodiment of a pattern transfer deposition method
- FIG. 9C illustrates an exemplary embodiment of a growth via catalyst method.
- TLP bonding produces joints that have microstructural and hence mechanical properties similar to those properties of the base materials.
- TLP bonding differs from diffusion bonding in which diffusion occurs when a melting point depressant element from an interlayer moves into lattice and grain boundaries of the substrates at the bonding temperature.
- Solid state diffusional processes lead to a change of composition at the bond interface and the dissimilar interlayer melts at a lower temperature than the parent materials.
- a thin layer of liquid spreads along the interface to form a joint at a lower temperature than the melting point of either of the parent materials.
- a reduction in bonding temperature leads to solidification of the melt, and this phase can subsequently be diffused away into the parent materials by holding at bonding temperature.
- a system and method 100 to improve bonding quality and fabrication reliability of bonding technologies for electronic devices is disclosed. This method 100 is especially useful for bonding technologies generating multiple compounds (or alloys).
- the present method 100 utilizes transient liquid phase (TLP) bonding for electronics packaging.
- TLP bonding may be effective for high power semiconductor devices as during this process the remelting temperature (i.e., sustainable temperature) is significantly larger than the bonding temperature.
- TLP may be useful in may electronic devices, especially by high temperature power electronic devices, such as those made of silicon, SiC, GaN, etc.
- FIG. 1 An overview of TLP is illustrated in FIG. 1 .
- two (or multiple) materials are involved with TLP bonding.
- material A 50 that has high melting temperature
- material B 75 that has low melting temperature with respect to the melting temperature of material A 50 .
- both material A 50 and material B 75 need not be pure in composition.
- the material B 75 begins to melt and diffuse into the material A 50 , as shown at step 2 of FIG. 1 .
- the diffused materials may sequentially react with the material B 75 and form an alloy via isothermal solidification. The solidification may continue until the bondline becomes a complete set of A+B alloy, such as depicted in step 4 of FIG. 1 (e.g., homogeneous bondline).
- Mechanical pressure (such as the range of several kPa to several MPa, such as from 3 kPa to 1 MPa) may applied during the TLP bonding process.
- multiple A+B alloys may generate multiple compounds such as depicted in step 5 of FIG. 1 leading to the non-homogeneous bondline.
- This non-homogenous bondline is often considered to be non-ideal because of its non-uniformity, inconsistency, uncontrollability, and unpredictable quality, which may present problems for production.
- copper-tin (Cu—Sn) are TLP materials that may generate multiple Cu—Sn compounds (or alloys).
- the methods 100 of this disclosure are configured to minimize the non-homogeneous bondline generation.
- a particular alloy of the multiple available alloys may be more suitable for power electronics applications, due to the high power usage and high temperature generation of the power electronics, such as a conductive bondline.
- the Cu 3 Sn alloy has higher electrical conductivity as compared to Cu 6 Sn 5 , even though both alloys are generated during Cu—Sn TLP bonding process (Cu 3 Sn corresponds to alloy B+ and Cu 6 Sn 5 corresponds to alloy A+).
- a target may be to utilize a process to create a homogeneous bondline made of the preferred material (e.g., Cu 3 Sn alloy instead of Cu 6 Sn 5 ).
- Copper-tin (Cu—Sn) TLP bonding has a complicated phase diagram (shown in FIG. 2 ) and may generate multiple composite formations.
- Cu—Sn composites (or alloys) in the figure Cu 3 Sn and Cu 6 Sn 5 are the most frequently observed in power electronics applications.
- the two Cu—Sn alloys may co-exist in a bondline of die attachment of power electronics, (one example such bondline is shown in FIG. 3 ).
- the bondline shown in FIG. 3 is non-homogeneous (i.e., made of multiple materials) with an ambiguous shape.
- the Cu 3 Sn alloy may be surrounded by the Cu 6 Sn 5 alloy ( FIG. 3 ) or sandwiched by the alloy Cu 6 Sn 5 .
- Bondline quality is hard to control.
- Several methods to produce only a Cu 3 Sn bondline have been attempted. One is reducing the thickness of Sn and the other is extending bonding time. However, both methods have problems.
- the first method is able to fabricate only a thin bondline, such as 1-5 ⁇ m, which experience more stress when exposed to high temperature compared to thick bondline.
- the present method may produce a bondline not limited in size, such as from 1-30 ⁇ m, or from 5 ⁇ m to 50 ⁇ m.
- the high temperature-induced stress which is a general challenge in power electronics, increases the chance of damage at the bondline and thus thinning Sn is a limited approach.
- the second method can achieve a thicker bondline but requires long process time, which is inadequate for mass production.
- These approaches and problems are not limited to Cu—Sn, which is used as an example herein, and can be observed in materials that have a complex phase diagram and generate multiple alloys.
- table 1 below illustrates a non-exhaustive list of additional conventional bonding materials.
- the present system 100 may be utilized to achieve a homogeneous bondline made of a single alloy.
- a single alloy may be achieved based on attributes targeted to power electronics applications.
- One example alloy is Cu 3 Sn which is more suitable in power electronics compared to other alloys, such as Cu 6 Sn 5 .
- the present system 100 may be configured to fabricate a thick bondline, which is advantageous in reducing bondline stress induced by high temperature. Also, aiding in mass production, the present system does not require long bonding time and is less depend on fabrication conditions. For instance, the bonding process of the present system 100 is between about 30 minutes to about 2 hours.
- the present system 100 provides excellent contact and good electrical and thermal conductivity to bonded devices, and therefore, improves device performance as well as bonding quality over prior techniques.
- this system and method 100 may be applied to wafer-to-wafer, die-to-wafer, die-to-substrate, or die-to-die bonding. Also, the presently disclosed technology 100 is compatible with conventional fabrication techniques.
- TLP may employ bonding two materials: material A 50 having a high melting temperature and material B 75 having a comparatively low melting temperature.
- the system 100 is configured to leverage the results of increasing the contact area between the two materials.
- the “wavy” surface (shown in FIG. 4B ) increases the contact area more than 40% compared to the flat surface (shown in FIG. 4A ).
- the altered surface properties, such as the wavy surface may achieved using the processes and techniques recited herein. (See for example FIGS. 8-9 ).
- a system 100 using a Cu—Sn is disclosed; however, an analogous method 100 can be used in other two-material TLP bonding that generates multiple alloys (such as those disclosed in table 1).
- the first material, material A 50 and the second material, material B 75 may comprise any of copper, tin, silver, indium, gold, nickel, and/or boron.
- the two most common alloys of Cu—Sn (Cu 3 Sn and Cu 6 Sn 5 ) may be formed in following ways. First, Cu (material A 50 ) reacts with Sn (material B 75 ) and produces the first Cu—Sn alloy, Cu 6 Sn 5 . This Cu 6 Sn 5 may react with left-over Cu 50 and form Cu 3 Sn.
- the Cu 6 Sn 5 is configured to have increased contact with Cu 50 , which expedites the reaction between the two materials and forms Cu 3 Sn more rapidly.
- a resultant uniform bondline of substantially only Cu 3 Sn may be achieved in shorter time compared to the flat surface ( FIG. 4A ).
- This method 100 has another advantage other than fabricating a homogeneous bondline at relatively short time.
- a bondline proving high electrical conductivity is beneficial.
- Cu 3 Sn has higher electrical conductivity than Cu 6 Sn 5 and thus is generally better suited for power electronics.
- the techniques disclosed herein create a bondline made of substantially only Cu 3 Sn without Cu 6 Sn 5 which is well suited for power electronics applications.
- FIG. 5 illustrates the transition from the multiple-alloy bondline to a single alloy bondline with high suitability for power electronics.
- the methods 100 disclosed herein are at least applicable to automotive, watercraft aerospace, nuclear, and/or electronics industries. Additionally, the methods 100 disclosed herein are at least applicable to hybrid, plug-in hybrid, and/or electrical vehicles.
- FIG. 4B depicts 2D cross-section views of the variations.
- the wavy surface can be series of several structures including rectangular pillars or cylinders ( FIG. 6A ), pyramids or chopped channels, similar to axe marks ( FIG. 6B ), or round bumps ( FIGS. 6C and 6D ). It is also possible to make a Velcro like structure ( FIGS. 6E and 6F ) to enhance the interface strength between material A 50 and B 75 (and/or between material A 50 and alloy of material B 75 after the alloy formation).
- FIG. 7 illustrates such arrangement variations of the rectangular pillars shown in FIG. 6A .
- the arrangement includes array of slits ( FIG. 7A ), grid/plaid pattern ( FIG. 7B ), or array of pillars ( FIG. 7C ).
- FIG. 7A illustrates such arrangement variations of the rectangular pillars shown in FIG. 6A .
- the arrangement includes array of slits ( FIG. 7A ), grid/plaid pattern ( FIG. 7B ), or array of pillars ( FIG. 7C ).
- FIG. 7 also have the arrangement variations.
- a random pattern or a combination of patterns such as a combination of FIGS. 7A-7C , and/or a combination of a random pattern and one of the regular patterns such as FIGS. 7A-7C .
- material B 75 may be sandwiched between two sections. These two sections may both be material A 50 or be made of material A and another material having altered surface features.
- material A 50 and/or material B 75 may have altered surface features. For instance, applying a surface feature such as a pattern to material A 50 (having a high melting temperature) without applying a surface feature, such as a pattern, to material B 75 , may be convenient for fabrication. This is because the material B 75 will be melted during TLP bonding process ( FIG. 1 , step 2 ). Thus, the melted material B 75 (for example Sn) reflows into the valley of the patterned material A (for example Cu). FIG. 8 depicts this process in greater detail.
- the altered surface properties can be fabricated in numerous ways.
- the altered surface properties may be by (1) etching and/or (2) deposition.
- etching is removing unwanted areas and deposition is adding wanted area.
- Etching can be achieved in multiple fashions.
- etching can be achieved by chemical etching (usage of liquid removing material A 50 ), dry etching (usage of gas or plasma removing material A 50 ), mechanical grinding or scribing, or high energy beam etching such as laser etching.
- Deposition can be achieved in multiple fashions.
- deposition can be achieved by depositing additional material A 50 through a mask using electroplating, evaporating, or supporting; pattern transfer such as nano-pattern transfer or selective bonding of material A 50 ; or growth of material A 50 .
- FIG. 9A illustrates the first deposition through a mask.
- FIG. 9B depicts pattern transfer using a mold and pre-filled material A.
- FIG. 9C illustrates a patterned catalyst for material A 50 and growth of material A 50 (or capture of material A 50 ).
- This disclosure describes a new bonding system 100 enabling fast and reliable fabrication of a homogeneous bondline with reduced dependency of thickness limitation.
- This system 100 is highly adaptable as various structures and fabrication options may be implemented. This enables less dependency on fabrication conditions.
- This process can be used over a wide field of applications. For instance, this process 100 can be used on any application associated with power electronics. For instance, this system 100 is applicable to wafer-to-wafer, die-to-wafer, die-to-substrate, or die-to-die bonding. Moreover, this system 100 is compatible with conventional fabrication techniques.
- a software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
- An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium.
- the storage medium may be integral to the processor.
- the processor and the storage medium may reside in an Application Specific Integrated Circuit (ASIC).
- ASIC Application Specific Integrated Circuit
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
- The present disclosure relates to alloy formation, and more particularly, to alloy formation using transient liquid phase bonding in power electronics.
- Various processes may be used to join materials together. Welding has been used in the automotive industries for years. Welding is the joining together of materials (typically metals or thermoplastics), usually by a fusion process. Design of complex components is often based on the concept of the “weakest link” limiting structural performance. The “ideal joint” would exhibit all of the characteristics of the bulk material comprising the structures being joined. Such a joint is by no means simple to produce.
- The automobile fabrication process, and the elements and subsystems within, require highly reliable couplings available in relatively short production windows. Waiting hours for a bond to occur is not an option. An emphasis on the electrical properties of welds and the characteristics of the any alloys in the bond has not been a primary focus in the industry.
- The above needs are successfully met via the disclosed system and method. The present disclosure is generally directed to control of alloy formation via transient liquid phase bonding in power electronics. In various embodiments, a technology to improve bonding quality and fabrication reliability of bonding technologies for electronic devices is disclosed. This method is especially useful for bonding technologies generating multiple compounds (or alloys).
- This disclosure describes a new bonding technique enabling fast and reliable fabrication of a substantially homogeneous bondline with reduced dependency of a thickness limitation. Stated another way, a substantially homogeneous bondline made of substantially a single alloy without a thickness limitation and excessive bonding time can be achieved using the techniques disclosed herein. A (more) suitable bondline providing better and targeted performance for power electronics may also be achieved. This system is highly adaptable as various structures and fabrication options may be implemented. This enables a diverse selection of fabrication techniques and creates less dependency on outside conditions. This process can be used over a wide field of applications. Moreover, for instance, this process can be used on any application associated with power electronics. For instance, this system is at least applicable to wafer-to-wafer, die-to-wafer, die-to-substrate, or die-to-die bonding. Moreover, this system is compatible with conventional fabrication techniques.
- The features and advantages of the embodiments of the present disclosure will become more apparent from the detailed description set forth below when taken in conjunction with the drawings. Naturally, the drawings and their associated descriptions illustrate example arrangements within the scope of the claims and do not limit the scope of the claims. Reference numbers are reused throughout the drawings to indicate correspondence between referenced elements.
-
FIG. 1 depicts an exemplary embodiment of transient liquid phase bonding; -
FIG. 2 depicts a phase diagram of Cu—Sn TLP bonding; -
FIG. 3 depicts an example of Cu—Sn TLP bonding with non-homogeneous bondlines; -
FIG. 4A illustrates an exemplary embodiment of TLP bonding without altering the surface properties of the materials; -
FIG. 4B illustrates an exemplary embodiment of TLP bonding comprising altered surface properties of at least one of the materials; -
FIG. 5 illustrates an exemplary embodiment of a modified bondline; -
FIGS. 6A-6F illustrate exemplary embodiments of two dimensional altered surface features of at least one of the materials; -
FIGS. 7A-7C illustrate exemplary embodiments of three dimensional variations associated with the altered surface features; -
FIGS. 8A-8C illustrate a reflow of one material into another material with surface features altered; -
FIG. 9A illustrates an exemplary embodiment of a material deposition method; -
FIG. 9B illustrates an exemplary embodiment of a pattern transfer deposition method; and -
FIG. 9C illustrates an exemplary embodiment of a growth via catalyst method. - In the following detailed description, numerous specific details are set forth to provide a understanding of the present disclosure. It will be apparent, however, to one ordinarily skilled in the art that elements of the present disclosure may be practiced without some of these specific details. In other instances, well-known structures and techniques have not been shown in detail to avoid unnecessarily obscuring the present disclosure.
- The present disclosure is generally directed to control of alloy formation via transient liquid phase bonding in power electronics. Transient liquid phase (TLP) bonding produces joints that have microstructural and hence mechanical properties similar to those properties of the base materials. TLP bonding differs from diffusion bonding in which diffusion occurs when a melting point depressant element from an interlayer moves into lattice and grain boundaries of the substrates at the bonding temperature. Solid state diffusional processes lead to a change of composition at the bond interface and the dissimilar interlayer melts at a lower temperature than the parent materials. Thus, a thin layer of liquid spreads along the interface to form a joint at a lower temperature than the melting point of either of the parent materials. A reduction in bonding temperature leads to solidification of the melt, and this phase can subsequently be diffused away into the parent materials by holding at bonding temperature.
- In various embodiments, a system and
method 100 to improve bonding quality and fabrication reliability of bonding technologies for electronic devices is disclosed. Thismethod 100 is especially useful for bonding technologies generating multiple compounds (or alloys). - With reference to
FIG. 1 according to various embodiments, thepresent method 100 utilizes transient liquid phase (TLP) bonding for electronics packaging. TLP bonding may be effective for high power semiconductor devices as during this process the remelting temperature (i.e., sustainable temperature) is significantly larger than the bonding temperature. TLP may be useful in may electronic devices, especially by high temperature power electronic devices, such as those made of silicon, SiC, GaN, etc. - An overview of TLP is illustrated in
FIG. 1 . In general, two (or multiple) materials are involved with TLP bonding. As depicted, two materials denoted as material A 50 (that has high melting temperature) and material B 75 (that has low melting temperature with respect to the melting temperature of material A 50). It should be appreciated that bothmaterial A 50 andmaterial B 75 need not be pure in composition. As bonding temperature increases, thematerial B 75 begins to melt and diffuse into thematerial A 50, as shown atstep 2 ofFIG. 1 . The diffused materials may sequentially react with thematerial B 75 and form an alloy via isothermal solidification. The solidification may continue until the bondline becomes a complete set of A+B alloy, such as depicted instep 4 ofFIG. 1 (e.g., homogeneous bondline). Mechanical pressure (such as the range of several kPa to several MPa, such as from 3 kPa to 1 MPa) may applied during the TLP bonding process. - In some TLP materials, multiple A+B alloys may generate multiple compounds such as depicted in
step 5 ofFIG. 1 leading to the non-homogeneous bondline. This non-homogenous bondline is often considered to be non-ideal because of its non-uniformity, inconsistency, uncontrollability, and unpredictable quality, which may present problems for production. For example, copper-tin (Cu—Sn) are TLP materials that may generate multiple Cu—Sn compounds (or alloys). As both copper and tin are widely employed in power electronics materials, in various embodiments, themethods 100 of this disclosure are configured to minimize the non-homogeneous bondline generation. - In general, a particular alloy of the multiple available alloys may be more suitable for power electronics applications, due to the high power usage and high temperature generation of the power electronics, such as a conductive bondline. For example, the Cu3Sn alloy has higher electrical conductivity as compared to Cu6Sn5, even though both alloys are generated during Cu—Sn TLP bonding process (Cu3Sn corresponds to alloy B+ and Cu6Sn5 corresponds to alloy A+). Thus, for power electronics, a target may be to utilize a process to create a homogeneous bondline made of the preferred material (e.g., Cu3Sn alloy instead of Cu6Sn5). The above disclosed needs are successfully met via the disclosed system and
method 100. - Copper-tin (Cu—Sn) TLP bonding has a complicated phase diagram (shown in
FIG. 2 ) and may generate multiple composite formations. Among Cu—Sn composites (or alloys) in the figure, Cu3Sn and Cu6Sn5 are the most frequently observed in power electronics applications. Using previous methods, the two Cu—Sn alloys may co-exist in a bondline of die attachment of power electronics, (one example such bondline is shown inFIG. 3 ). The bondline shown inFIG. 3 is non-homogeneous (i.e., made of multiple materials) with an ambiguous shape. The Cu3Sn alloy may be surrounded by the Cu6Sn5 alloy (FIG. 3 ) or sandwiched by the alloy Cu6Sn5. Bondline quality is hard to control. Several methods to produce only a Cu3Sn bondline have been attempted. One is reducing the thickness of Sn and the other is extending bonding time. However, both methods have problems. The first method (thinner Sn layer) is able to fabricate only a thin bondline, such as 1-5 μm, which experience more stress when exposed to high temperature compared to thick bondline. The present method may produce a bondline not limited in size, such as from 1-30 μm, or from 5 μm to 50 μm. The high temperature-induced stress, which is a general challenge in power electronics, increases the chance of damage at the bondline and thus thinning Sn is a limited approach. The second method (longer bonding time) can achieve a thicker bondline but requires long process time, which is inadequate for mass production. These approaches and problems are not limited to Cu—Sn, which is used as an example herein, and can be observed in materials that have a complex phase diagram and generate multiple alloys. For example, table 1 below illustrates a non-exhaustive list of additional conventional bonding materials. -
TABLE 1 Material System Bonding Process Remelt Temp. Copper - Tin 4 min at 280° C. >415° C. Silver - Tin 60 min at 250° C. >600° C. Silver - Indium 120 min at 175° C. >880° C. Gold - Tin 15 min at 260° C. >278° C. Gold - Indium 0.5 min at 200° C. >495° C. Nickel - Tin 6 min at 300° C. >400° C. - In various embodiments the
present system 100 may be utilized to achieve a homogeneous bondline made of a single alloy. For instance, a single alloy may be achieved based on attributes targeted to power electronics applications. One example alloy is Cu3Sn which is more suitable in power electronics compared to other alloys, such as Cu6Sn5. Thepresent system 100 may be configured to fabricate a thick bondline, which is advantageous in reducing bondline stress induced by high temperature. Also, aiding in mass production, the present system does not require long bonding time and is less depend on fabrication conditions. For instance, the bonding process of thepresent system 100 is between about 30 minutes to about 2 hours. Thepresent system 100 provides excellent contact and good electrical and thermal conductivity to bonded devices, and therefore, improves device performance as well as bonding quality over prior techniques. - Multiple structures and fabrication options are proposed. Various materials may be used. Also, a pre-treatment of a material surface may be performed. This variety enables a flexible design and fabrication process and easy translation of this technology to many applications. For instance, this system and
method 100 may be applied to wafer-to-wafer, die-to-wafer, die-to-substrate, or die-to-die bonding. Also, the presently disclosedtechnology 100 is compatible with conventional fabrication techniques. - With reference to
FIGS. 4A and 4B , a conceptual view of an exemplary embodiment of the presently disclosed technology is depicted. As previously discussed, TLP may employ bonding two materials:material A 50 having a high melting temperature andmaterial B 75 having a comparatively low melting temperature. Thesystem 100 is configured to leverage the results of increasing the contact area between the two materials. The “wavy” surface (shown inFIG. 4B ) increases the contact area more than 40% compared to the flat surface (shown inFIG. 4A ). The altered surface properties, such as the wavy surface, may achieved using the processes and techniques recited herein. (See for exampleFIGS. 8-9 ). - A
system 100 using a Cu—Sn is disclosed; however, ananalogous method 100 can be used in other two-material TLP bonding that generates multiple alloys (such as those disclosed in table 1). For example the first material,material A 50 and the second material,material B 75, may comprise any of copper, tin, silver, indium, gold, nickel, and/or boron. The two most common alloys of Cu—Sn (Cu3Sn and Cu6Sn5) may be formed in following ways. First, Cu (material A 50) reacts with Sn (material B 75) and produces the first Cu—Sn alloy, Cu6Sn5. This Cu6Sn5 may react with left-overCu 50 and form Cu3Sn. Therefore, in various embodiments the Cu6Sn5 is configured to have increased contact withCu 50, which expedites the reaction between the two materials and forms Cu3Sn more rapidly. Thus, a resultant uniform bondline of substantially only Cu3Sn may be achieved in shorter time compared to the flat surface (FIG. 4A ). - This
method 100 has another advantage other than fabricating a homogeneous bondline at relatively short time. In power electronics, a bondline proving high electrical conductivity is beneficial. Cu3Sn has higher electrical conductivity than Cu6Sn5 and thus is generally better suited for power electronics. Stated another way, the techniques disclosed herein create a bondline made of substantially only Cu3Sn without Cu6Sn5 which is well suited for power electronics applications.FIG. 5 illustrates the transition from the multiple-alloy bondline to a single alloy bondline with high suitability for power electronics. Themethods 100 disclosed herein are at least applicable to automotive, watercraft aerospace, nuclear, and/or electronics industries. Additionally, themethods 100 disclosed herein are at least applicable to hybrid, plug-in hybrid, and/or electrical vehicles. - As previously disclosed, the wavy surface approach of
FIG. 4B is just one permutation of the available altered surface properties. Altered surface properties may be any shape. For instance, altered surface properties could follow a geometric or non-geometric pattern and/or combinations thereof. The altered surface properties may be a regular or an inconsistent pattern. For instance, a non-exhaustive listing of variations is shown inFIGS. 6 and 7 .FIG. 6 depicts 2D cross-section views of the variations. The wavy surface can be series of several structures including rectangular pillars or cylinders (FIG. 6A ), pyramids or chopped channels, similar to axe marks (FIG. 6B ), or round bumps (FIGS. 6C and 6D ). It is also possible to make a Velcro like structure (FIGS. 6E and 6F ) to enhance the interface strength betweenmaterial A 50 and B 75 (and/or betweenmaterial A 50 and alloy ofmaterial B 75 after the alloy formation). - The arrangement of the structures may also be varied. For instance,
FIG. 7 illustrates such arrangement variations of the rectangular pillars shown inFIG. 6A . The arrangement includes array of slits (FIG. 7A ), grid/plaid pattern (FIG. 7B ), or array of pillars (FIG. 7C ). Of course, other variations shown inFIG. 7 also have the arrangement variations. For instance, a random pattern or a combination of patterns such as a combination ofFIGS. 7A-7C , and/or a combination of a random pattern and one of the regular patterns such asFIGS. 7A-7C . - In various embodiments,
material B 75 may be sandwiched between two sections. These two sections may both bematerial A 50 or be made of material A and another material having altered surface features. - In various embodiments,
material A 50 and/ormaterial B 75 may have altered surface features. For instance, applying a surface feature such as a pattern to material A 50 (having a high melting temperature) without applying a surface feature, such as a pattern, tomaterial B 75, may be convenient for fabrication. This is because thematerial B 75 will be melted during TLP bonding process (FIG. 1 , step 2). Thus, the melted material B 75 (for example Sn) reflows into the valley of the patterned material A (for example Cu).FIG. 8 depicts this process in greater detail. - For example, during assembly (
FIG. 8A ,step 1 inFIG. 1 ), onlymaterial A 50 has altered surface features such as a pattern, whereasmaterial B 75 does not have an substantially altered surface feature. In response to the bonding process starting, the material B melts and reflows into the holes or valleys of material A 50 (FIG. 8B , step 2). As the bonding proceeds, the reflowedmaterial B 75 forms the large contact structure with material A 50 (FIG. 8C , step 3). - The altered surface properties, e.g., wavy surface and/or pattern, can be fabricated in numerous ways. For instance, the altered surface properties may be by (1) etching and/or (2) deposition. In general, etching is removing unwanted areas and deposition is adding wanted area. Etching can be achieved in multiple fashions. For instance, etching can be achieved by chemical etching (usage of liquid removing material A 50), dry etching (usage of gas or plasma removing material A 50), mechanical grinding or scribing, or high energy beam etching such as laser etching. Deposition can be achieved in multiple fashions. For example, deposition can be achieved by depositing
additional material A 50 through a mask using electroplating, evaporating, or supporting; pattern transfer such as nano-pattern transfer or selective bonding ofmaterial A 50; or growth ofmaterial A 50.FIGS. 9A-9C depict these deposition methods.FIG. 9A illustrates the first deposition through a mask.FIG. 9B depicts pattern transfer using a mold and pre-filled material A.FIG. 9C illustrates a patterned catalyst formaterial A 50 and growth of material A 50 (or capture of material A 50). - This disclosure describes a
new bonding system 100 enabling fast and reliable fabrication of a homogeneous bondline with reduced dependency of thickness limitation. Thissystem 100 is highly adaptable as various structures and fabrication options may be implemented. This enables less dependency on fabrication conditions. This process can be used over a wide field of applications. For instance, thisprocess 100 can be used on any application associated with power electronics. For instance, thissystem 100 is applicable to wafer-to-wafer, die-to-wafer, die-to-substrate, or die-to-die bonding. Moreover, thissystem 100 is compatible with conventional fabrication techniques. - Those of ordinary skill will appreciate that the various illustrative logical blocks and process steps described in connection with the examples disclosed herein may be implemented as electronic hardware, computer software, or combinations of both. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Ordinarily skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the disclosed apparatus and methods.
- The steps of a method or algorithm described in connection with the examples disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium may be integral to the processor. The processor and the storage medium may reside in an Application Specific Integrated Circuit (ASIC).
- The foregoing description of the disclosed example embodiments is provided to enable any person of ordinary skill in the art to make or use the present invention. Various modifications to these examples will be readily apparent to those of ordinary skill in the art, and the principles disclosed herein may be applied to other examples without departing from the spirit or scope of the present invention. The described embodiments are to be considered in all respects only as illustrative and not restrictive and the scope of the invention is, therefore, indicated by the following claims rather than by the foregoing description. All changes which come within the meaning and range of equivalency of the claims are to be embraced within their scope.
Claims (20)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/448,632 US10058951B2 (en) | 2012-04-17 | 2012-04-17 | Alloy formation control of transient liquid phase bonding |
US13/723,055 US8814030B2 (en) | 2012-04-17 | 2012-12-20 | Improvements of long term bondline reliability of power electronics operating at high temperatures |
JP2013062083A JP5676670B2 (en) | 2012-04-17 | 2013-03-25 | Control of alloy formation in liquid phase diffusion bonding |
US13/957,320 US9044822B2 (en) | 2012-04-17 | 2013-08-01 | Transient liquid phase bonding process for double sided power modules |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/448,632 US10058951B2 (en) | 2012-04-17 | 2012-04-17 | Alloy formation control of transient liquid phase bonding |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/723,055 Continuation-In-Part US8814030B2 (en) | 2012-04-17 | 2012-12-20 | Improvements of long term bondline reliability of power electronics operating at high temperatures |
Publications (2)
Publication Number | Publication Date |
---|---|
US20130270326A1 true US20130270326A1 (en) | 2013-10-17 |
US10058951B2 US10058951B2 (en) | 2018-08-28 |
Family
ID=49324184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/448,632 Active 2033-08-18 US10058951B2 (en) | 2012-04-17 | 2012-04-17 | Alloy formation control of transient liquid phase bonding |
Country Status (2)
Country | Link |
---|---|
US (1) | US10058951B2 (en) |
JP (1) | JP5676670B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150008253A1 (en) * | 2012-04-17 | 2015-01-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Transient liquid phase bonding process for double sided power modules |
US20160136761A1 (en) * | 2014-11-18 | 2016-05-19 | Baker Hughes Incorporated | Methods and compositions for brazing, and earth-boring tools formed from such methods and compositions |
US20160136762A1 (en) * | 2014-11-18 | 2016-05-19 | Baker Hughes Incorporated | Methods and compositions for brazing |
DE102016224068A1 (en) * | 2015-12-21 | 2018-06-07 | Mitsubishi Electric Corporation | Power semiconductor device and method of manufacturing the same |
CN116352244A (en) * | 2023-04-12 | 2023-06-30 | 汕尾市栢林电子封装材料有限公司 | Preparation method for presetting gold-tin soldering lug by utilizing transient liquid phase diffusion soldering |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10541152B2 (en) | 2014-07-31 | 2020-01-21 | Skyworks Solutions, Inc. | Transient liquid phase material bonding and sealing structures and methods of forming same |
TWI661494B (en) | 2014-07-31 | 2019-06-01 | 美商西凱渥資訊處理科技公司 | Multilayered transient liquid phase bonding |
WO2017086324A1 (en) * | 2015-11-16 | 2017-05-26 | 株式会社豊田中央研究所 | Joining structure and method for manufacturing same |
JP2018110381A (en) | 2016-12-02 | 2018-07-12 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | Manufacturing method of electronic device to prevent water ingress during manufacturing |
EP3753049B1 (en) * | 2019-05-07 | 2022-09-21 | Light-Med (USA), Inc. | Silver-indium transient liquid phase method of bonding semiconductor device and heat-spreading mount and semiconductor structure having silver-indium transient liquid phase bonding joint |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2490548A (en) * | 1945-07-07 | 1949-12-06 | Gen Motors Corp | Method of making composite articles |
US5372298A (en) * | 1992-01-07 | 1994-12-13 | The Regents Of The University Of California | Transient liquid phase ceramic bonding |
US6547124B2 (en) * | 2001-06-14 | 2003-04-15 | Bae Systems Information And Electronic Systems Integration Inc. | Method for forming a micro column grid array (CGA) |
US20060283921A1 (en) * | 2005-06-15 | 2006-12-21 | Siemens Westinghouse Power Corporation | Method of diffusion bonding of nickel based superalloy substrates |
US20100072555A1 (en) * | 2008-09-24 | 2010-03-25 | Evigia Systems, Inc. | Wafer bonding method and wafer stack formed thereby |
US20110192024A1 (en) * | 2010-02-05 | 2011-08-11 | Allen David B | Sprayed Skin Turbine Component |
Family Cites Families (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4551904A (en) | 1982-02-09 | 1985-11-12 | Trw Inc. | Opposed gate-source transistor |
US6330164B1 (en) | 1985-10-18 | 2001-12-11 | Formfactor, Inc. | Interconnect assemblies and methods including ancillary electronic component connected in immediate proximity of semiconductor device |
WO1991013533A1 (en) | 1990-03-01 | 1991-09-05 | Motorola, Inc. | Selectively releasing conductive runner and substrate assembly |
DE4007566C2 (en) | 1990-03-09 | 1998-07-16 | Siemens Ag | Power amplifier for feeding an inductance with switched transistors |
US5166774A (en) | 1990-10-05 | 1992-11-24 | Motorola, Inc. | Selectively releasing conductive runner and substrate assembly having non-planar areas |
JPH04362147A (en) | 1991-03-07 | 1992-12-15 | Rockwell Internatl Corp | Method of forming metal matrix composite by transition liquid phase strengthening |
US5225633A (en) | 1991-10-04 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Air Force | Bridge chip interconnect system |
US5152695A (en) | 1991-10-10 | 1992-10-06 | Amp Incorporated | Surface mount electrical connector |
US5234152A (en) | 1992-01-07 | 1993-08-10 | Regents Of The University Of California | Transient liquid phase ceramic bonding |
JP3212382B2 (en) | 1992-10-01 | 2001-09-25 | 日本碍子株式会社 | Precision brazing method |
US5432998A (en) | 1993-07-27 | 1995-07-18 | International Business Machines, Corporation | Method of solder bonding processor package |
US5381944A (en) | 1993-11-04 | 1995-01-17 | The Regents Of The University Of California | Low temperature reactive bonding |
US5772451A (en) | 1993-11-16 | 1998-06-30 | Form Factor, Inc. | Sockets for electronic components and methods of connecting to electronic components |
US7064566B2 (en) | 1993-11-16 | 2006-06-20 | Formfactor, Inc. | Probe card assembly and kit |
US5416429A (en) | 1994-05-23 | 1995-05-16 | Wentworth Laboratories, Inc. | Probe assembly for testing integrated circuits |
US5688716A (en) | 1994-07-07 | 1997-11-18 | Tessera, Inc. | Fan-out semiconductor chip assembly |
US5542602A (en) * | 1994-12-30 | 1996-08-06 | International Business Machines Corporation | Stabilization of conductive adhesive by metallurgical bonding |
US5613861A (en) | 1995-06-07 | 1997-03-25 | Xerox Corporation | Photolithographically patterned spring contact |
US6483328B1 (en) | 1995-11-09 | 2002-11-19 | Formfactor, Inc. | Probe card for probing wafers with raised contact elements |
JP2908747B2 (en) | 1996-01-10 | 1999-06-21 | 三菱電機株式会社 | IC socket |
US5830289A (en) | 1996-02-01 | 1998-11-03 | Boeing North American, Inc. | Process for enhancing the bond strength of resistance welded joints between titanium alloy articles |
US5910341A (en) | 1996-10-31 | 1999-06-08 | International Business Machines Corporation | Method of controlling the spread of an adhesive on a circuitized organic substrate |
US5821827A (en) | 1996-12-18 | 1998-10-13 | Endgate Corporation | Coplanar oscillator circuit structures |
US5836075A (en) | 1996-12-31 | 1998-11-17 | Westinghouse Electric Corporation | Process for forming combustion turbine components by transient liquid phase bonding |
US5997708A (en) | 1997-04-30 | 1999-12-07 | Hewlett-Packard Company | Multilayer integrated assembly having specialized intermediary substrate |
US5935430A (en) | 1997-04-30 | 1999-08-10 | Hewlett-Packard Company | Structure for capturing express transient liquid phase during diffusion bonding of planar devices |
GB9709167D0 (en) | 1997-05-06 | 1997-06-25 | Univ Cambridge Tech | Metal bonding |
US6098871A (en) | 1997-07-22 | 2000-08-08 | United Technologies Corporation | Process for bonding metallic members using localized rapid heating |
US6087021A (en) | 1998-05-28 | 2000-07-11 | International Business Machines Corporation | Polymer with transient liquid phase bondable particles |
US7247035B2 (en) | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
US7382142B2 (en) | 2000-05-23 | 2008-06-03 | Nanonexus, Inc. | High density interconnect system having rapid fabrication cycle |
US7126220B2 (en) | 2002-03-18 | 2006-10-24 | Nanonexus, Inc. | Miniaturized contact spring |
US6917525B2 (en) | 2001-11-27 | 2005-07-12 | Nanonexus, Inc. | Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs |
US6303992B1 (en) | 1999-07-06 | 2001-10-16 | Visteon Global Technologies, Inc. | Interposer for mounting semiconductor dice on substrates |
US6888362B2 (en) | 2000-11-09 | 2005-05-03 | Formfactor, Inc. | Test head assembly for electronic components with plurality of contoured microelectronic spring contacts |
US7335965B2 (en) | 1999-08-25 | 2008-02-26 | Micron Technology, Inc. | Packaging of electronic chips with air-bridge structures |
JP3752943B2 (en) | 2000-01-31 | 2006-03-08 | 株式会社日立製作所 | Semiconductor device driving apparatus and control method thereof |
US6444921B1 (en) | 2000-02-03 | 2002-09-03 | Fujitsu Limited | Reduced stress and zero stress interposers for integrated-circuit chips, multichip substrates, and the like |
US7579848B2 (en) | 2000-05-23 | 2009-08-25 | Nanonexus, Inc. | High density interconnect system for IC packages and interconnect assemblies |
US6379982B1 (en) | 2000-08-17 | 2002-04-30 | Micron Technology, Inc. | Wafer on wafer packaging and method of fabrication for full-wafer burn-in and testing |
US6529022B2 (en) | 2000-12-15 | 2003-03-04 | Eaglestone Pareners I, Llc | Wafer testing interposer for a conventional package |
US20020092895A1 (en) | 2001-01-12 | 2002-07-18 | Edmund Blackshear | Formation of a solder joint having a transient liquid phase by annealing and quenching |
US7396236B2 (en) | 2001-03-16 | 2008-07-08 | Formfactor, Inc. | Wafer level interposer |
US6586684B2 (en) | 2001-06-29 | 2003-07-01 | Intel Corporation | Circuit housing clamp and method of manufacture therefor |
US6624484B2 (en) | 2001-07-31 | 2003-09-23 | Nokia Corporation | IGFET and tuning circuit |
US6602053B2 (en) | 2001-08-02 | 2003-08-05 | Siemens Westinghouse Power Corporation | Cooling structure and method of manufacturing the same |
US7045889B2 (en) | 2001-08-21 | 2006-05-16 | Micron Technology, Inc. | Device for establishing non-permanent electrical connection between an integrated circuit device lead element and a substrate |
US7049693B2 (en) | 2001-08-29 | 2006-05-23 | Micron Technology, Inc. | Electrical contact array for substrate assemblies |
JP3860000B2 (en) | 2001-09-07 | 2006-12-20 | Necエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
US7015457B2 (en) | 2002-03-18 | 2006-03-21 | Honeywell International Inc. | Spectrally tunable detector |
US6750547B2 (en) | 2001-12-26 | 2004-06-15 | Micron Technology, Inc. | Multi-substrate microelectronic packages and methods for manufacture |
US6992520B1 (en) | 2002-01-22 | 2006-01-31 | Edward Herbert | Gate drive method and apparatus for reducing losses in the switching of MOSFETs |
US6853209B1 (en) | 2002-07-16 | 2005-02-08 | Aehr Test Systems | Contactor assembly for testing electrical circuits |
US6867608B2 (en) | 2002-07-16 | 2005-03-15 | Aehr Test Systems | Assembly for electrically connecting a test component to a testing machine for testing electrical circuits on the test component |
US6845901B2 (en) | 2002-08-22 | 2005-01-25 | Micron Technology, Inc. | Apparatus and method for depositing and reflowing solder paste on a microelectronic workpiece |
JP4159828B2 (en) | 2002-08-26 | 2008-10-01 | 独立行政法人物質・材料研究機構 | Diboride single crystal substrate, semiconductor laser diode and semiconductor device using the same, and manufacturing method thereof |
JP3931793B2 (en) | 2002-11-08 | 2007-06-20 | 松下電工株式会社 | Resin supply system |
US7002249B2 (en) | 2002-11-12 | 2006-02-21 | Primarion, Inc. | Microelectronic component with reduced parasitic inductance and method of fabricating |
TWI221333B (en) | 2003-01-14 | 2004-09-21 | Advanced Semiconductor Eng | Bridge connection type of MCM package |
US7758351B2 (en) | 2003-04-11 | 2010-07-20 | Neoconix, Inc. | Method and system for batch manufacturing of spring elements |
US7527090B2 (en) | 2003-06-30 | 2009-05-05 | Intel Corporation | Heat dissipating device with preselected designed interface for thermal interface materials |
US7165712B2 (en) | 2003-10-23 | 2007-01-23 | Siemens Power Generation, Inc. | Transient liquid phase bonding to cold-worked surfaces |
US6958531B2 (en) | 2003-11-14 | 2005-10-25 | The Regents Of The University Of Michigan | Multi-substrate package and method for assembling same |
WO2005118291A2 (en) | 2004-04-19 | 2005-12-15 | Stark David H | Bonded assemblies |
US7451907B2 (en) | 2004-08-06 | 2008-11-18 | General Motors Corporation | Roll bonding of bipolar plates |
JP4718809B2 (en) | 2004-08-11 | 2011-07-06 | ローム株式会社 | Electronic device, semiconductor device using the same, and method for manufacturing semiconductor device |
US7459795B2 (en) | 2004-08-19 | 2008-12-02 | Formfactor, Inc. | Method to build a wirebond probe card in a many at a time fashion |
WO2007001392A2 (en) | 2004-10-01 | 2007-01-04 | The Regents Of The University Of Michigan | Manufacture of shape-memory alloy cellular meterials and structures by transient-liquid reactive joining |
US7565996B2 (en) | 2004-10-04 | 2009-07-28 | United Technologies Corp. | Transient liquid phase bonding using sandwich interlayers |
US7335931B2 (en) | 2004-12-17 | 2008-02-26 | Raytheon Company | Monolithic microwave integrated circuit compatible FET structure |
US7390735B2 (en) | 2005-01-07 | 2008-06-24 | Teledyne Licensing, Llc | High temperature, stable SiC device interconnects and packages having low thermal resistance |
US7259625B2 (en) | 2005-04-05 | 2007-08-21 | International Business Machines Corporation | High Q monolithic inductors for use in differential circuits |
US7628309B1 (en) | 2005-05-03 | 2009-12-08 | Rosemount Aerospace Inc. | Transient liquid phase eutectic bonding |
JP2007032465A (en) | 2005-07-28 | 2007-02-08 | Nippon Steel Corp | Lightweight engine valve superior in heat radiation |
US20070152026A1 (en) | 2005-12-30 | 2007-07-05 | Daewoong Suh | Transient liquid phase bonding method |
JP2007189154A (en) | 2006-01-16 | 2007-07-26 | Fujitsu Ltd | Heat conductive bonding material, and packaging method |
US7495877B2 (en) | 2006-03-26 | 2009-02-24 | Alpha & Omega Semiconductor, Ltd. | Circuit configuration and method to reduce ringing in the semiconductor power switching circuits |
JP4702157B2 (en) | 2006-04-17 | 2011-06-15 | パナソニック株式会社 | IC component mounting method and die bonding apparatus |
US7541681B2 (en) | 2006-05-04 | 2009-06-02 | Infineon Technologies Ag | Interconnection structure, electronic component and method of manufacturing the same |
US7910945B2 (en) | 2006-06-30 | 2011-03-22 | Cree, Inc. | Nickel tin bonding system with barrier layer for semiconductor wafers and devices |
US8643195B2 (en) | 2006-06-30 | 2014-02-04 | Cree, Inc. | Nickel tin bonding system for semiconductor wafers and devices |
US8962151B2 (en) * | 2006-08-15 | 2015-02-24 | Integrated Micro Sensors, Inc. | Method of bonding solid materials |
US7876087B2 (en) | 2006-09-12 | 2011-01-25 | Innoconnex, Inc. | Probe card repair using coupons with spring contacts and separate atachment points |
US20080067502A1 (en) | 2006-09-14 | 2008-03-20 | Nirupama Chakrapani | Electronic packages with fine particle wetting and non-wetting zones |
US7855459B2 (en) | 2006-09-22 | 2010-12-21 | Cree, Inc. | Modified gold-tin system with increased melting temperature for wafer bonding |
US20080156475A1 (en) | 2006-12-28 | 2008-07-03 | Daewoong Suh | Thermal interfaces in electronic systems |
US7674112B2 (en) | 2006-12-28 | 2010-03-09 | Formfactor, Inc. | Resilient contact element and methods of fabrication |
US7583101B2 (en) | 2007-01-18 | 2009-09-01 | Formfactor, Inc. | Probing structure with fine pitch probes |
US7742311B2 (en) | 2007-04-13 | 2010-06-22 | Hewlett-Packard Development Company, L.P. | Damage prevention interposer for electronic package and electronic interconnect structure |
US8049326B2 (en) | 2007-06-07 | 2011-11-01 | The Regents Of The University Of Michigan | Environment-resistant module, micropackage and methods of manufacturing same |
US20090242121A1 (en) | 2008-03-31 | 2009-10-01 | Daewoong Suh | Low stress, low-temperature metal-metal composite flip chip interconnect |
US8138102B2 (en) | 2008-08-21 | 2012-03-20 | International Business Machines Corporation | Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure |
WO2010058516A1 (en) | 2008-11-18 | 2010-05-27 | パナソニック株式会社 | Method for mounting member |
JP2010134082A (en) | 2008-12-03 | 2010-06-17 | Advanced Photonics Inc | Method of mounting component and apparatus manufactured thereby |
US8168490B2 (en) | 2008-12-23 | 2012-05-01 | Intersil Americas, Inc. | Co-packaging approach for power converters based on planar devices, structure and method |
TW201029059A (en) | 2009-01-22 | 2010-08-01 | Univ Nat Central | Tin/silver bonding structure and its method |
DE102009050426B3 (en) | 2009-10-22 | 2011-03-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for aligned application of silicon chips with switching structures on e.g. wafer substrate, involves fixing aligned components on substrate by electrostatic force by applying electrical holding voltage above metallization surfaces |
US8076696B2 (en) | 2009-10-30 | 2011-12-13 | General Electric Company | Power module assembly with reduced inductance |
US8592986B2 (en) * | 2010-11-09 | 2013-11-26 | Rohm Co., Ltd. | High melting point soldering layer alloyed by transient liquid phase and fabrication method for the same, and semiconductor device |
-
2012
- 2012-04-17 US US13/448,632 patent/US10058951B2/en active Active
-
2013
- 2013-03-25 JP JP2013062083A patent/JP5676670B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2490548A (en) * | 1945-07-07 | 1949-12-06 | Gen Motors Corp | Method of making composite articles |
US5372298A (en) * | 1992-01-07 | 1994-12-13 | The Regents Of The University Of California | Transient liquid phase ceramic bonding |
US6547124B2 (en) * | 2001-06-14 | 2003-04-15 | Bae Systems Information And Electronic Systems Integration Inc. | Method for forming a micro column grid array (CGA) |
US20060283921A1 (en) * | 2005-06-15 | 2006-12-21 | Siemens Westinghouse Power Corporation | Method of diffusion bonding of nickel based superalloy substrates |
US20100072555A1 (en) * | 2008-09-24 | 2010-03-25 | Evigia Systems, Inc. | Wafer bonding method and wafer stack formed thereby |
US20110192024A1 (en) * | 2010-02-05 | 2011-08-11 | Allen David B | Sprayed Skin Turbine Component |
Non-Patent Citations (2)
Title |
---|
Li et al ("Interfacial reaction in Cu/Sn/Cu system during the transient liquid phase soldering process", 11/18/10, Acta Materialia 59 (2011), pp.1198-1211). * |
Munding et al., Cu/Sn Solid-Liquid Interdiffusion Bonding, Wafer-Level 3d ICs Process Technology, 2008. * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9044822B2 (en) * | 2012-04-17 | 2015-06-02 | Toyota Motor Engineering & Manufacturing North America, Inc. | Transient liquid phase bonding process for double sided power modules |
US20150008253A1 (en) * | 2012-04-17 | 2015-01-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Transient liquid phase bonding process for double sided power modules |
US10807201B2 (en) | 2014-11-18 | 2020-10-20 | Baker Hughes Holdings Llc | Braze materials and earth-boring tools comprising braze materials |
US20160136761A1 (en) * | 2014-11-18 | 2016-05-19 | Baker Hughes Incorporated | Methods and compositions for brazing, and earth-boring tools formed from such methods and compositions |
US20160136762A1 (en) * | 2014-11-18 | 2016-05-19 | Baker Hughes Incorporated | Methods and compositions for brazing |
US9687940B2 (en) * | 2014-11-18 | 2017-06-27 | Baker Hughes Incorporated | Methods and compositions for brazing, and earth-boring tools formed from such methods and compositions |
US9731384B2 (en) * | 2014-11-18 | 2017-08-15 | Baker Hughes Incorporated | Methods and compositions for brazing |
US10160063B2 (en) | 2014-11-18 | 2018-12-25 | Baker Hughes Incorporated | Braze materials and earth-boring tools comprising braze materials |
DE102016224068A1 (en) * | 2015-12-21 | 2018-06-07 | Mitsubishi Electric Corporation | Power semiconductor device and method of manufacturing the same |
US10475721B2 (en) | 2015-12-21 | 2019-11-12 | Mitsubishi Electric Corporation | Power semiconductor device and method for manufacturing same |
US10283430B2 (en) | 2015-12-21 | 2019-05-07 | Mitsubishi Electric Corporation | Power semiconductor device and method for manufacturing same |
DE102016224068B4 (en) | 2015-12-21 | 2023-06-22 | Mitsubishi Electric Corporation | Power semiconductor device and method for manufacturing the same |
CN116352244A (en) * | 2023-04-12 | 2023-06-30 | 汕尾市栢林电子封装材料有限公司 | Preparation method for presetting gold-tin soldering lug by utilizing transient liquid phase diffusion soldering |
Also Published As
Publication number | Publication date |
---|---|
US10058951B2 (en) | 2018-08-28 |
JP5676670B2 (en) | 2015-02-25 |
JP2013220476A (en) | 2013-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10058951B2 (en) | Alloy formation control of transient liquid phase bonding | |
US8814030B2 (en) | Improvements of long term bondline reliability of power electronics operating at high temperatures | |
US9044822B2 (en) | Transient liquid phase bonding process for double sided power modules | |
Zhang et al. | Materials, processing and reliability of low temperature bonding in 3D chip stacking | |
KR102049011B1 (en) | Thermoelectric module and method for manufacturing the same | |
JP5930604B2 (en) | Method for manufacturing anisotropic heat conduction element | |
US10734352B2 (en) | Metallic interconnect, a method of manufacturing a metallic interconnect, a semiconductor arrangement and a method of manufacturing a semiconductor arrangement | |
US10008394B2 (en) | Method for mounting an electrical component, wherein a hood is used, and hood suitable for use in said method | |
JP5672324B2 (en) | Manufacturing method of joined body and manufacturing method of power module substrate | |
US9362242B2 (en) | Bonding structure including metal nano particle | |
US20110114705A1 (en) | Method for creating thermal bonds while minimizing heating of parts | |
KR102330134B1 (en) | Process for producing united object and process for producing substrate for power module | |
CN104103749A (en) | Multilayer thermoelectric module and method for manufacturing same | |
US10418504B2 (en) | Bonding using conductive particles in conducting adhesives | |
JP6374240B2 (en) | Liquid phase diffusion bonding process for double-sided power modules | |
TW201836097A (en) | Methods for ultrasonically bonding semiconductor elements | |
JP2015155108A (en) | Metal conjugate, waveguide for antenna, and semiconductor device | |
TW200830439A (en) | Method of bonding solder ball and base plate and method of manufacturing pakaging structur of using the same | |
JP2019008952A (en) | Method of manufacturing terminal plate | |
Sha et al. | 40 μm silver flip-chip interconnect technology with solid-state bonding | |
KR102039791B1 (en) | Mounting method of semiconductor chip and semiconductor chip package | |
RU2530203C2 (en) | Method of creating interconnections in semiconductor lasers | |
CN113385805B (en) | Welding method of 65% silicon carbide particle reinforced aluminum matrix composite material with pure Al as intermediate material layer | |
US20230045136A1 (en) | Structured assembly and interconnect for photovoltaic systems | |
Morinaga et al. | Study of low temperature and high heat-resistant fluxless bonding via nanoscale thin film control toward wafer-level multiple chip stacking for 3D LSI |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AME Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YOON, SANG WON;SHIOZAKI, KOJI;SIGNING DATES FROM 20120403 TO 20120404;REEL/FRAME:028058/0303 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TOYOTA MOTOR ENGINEERING MANUFACTURING NORTH AMERICA, INC.;REEL/FRAME:046701/0846 Effective date: 20180820 |
|
AS | Assignment |
Owner name: DENSO CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TOYOTA JIDOSHA KABUSHIKI KAISHA;REEL/FRAME:052512/0248 Effective date: 20191224 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |