JP3931793B2 - Resin supply system - Google Patents

Resin supply system Download PDF

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Publication number
JP3931793B2
JP3931793B2 JP2002325683A JP2002325683A JP3931793B2 JP 3931793 B2 JP3931793 B2 JP 3931793B2 JP 2002325683 A JP2002325683 A JP 2002325683A JP 2002325683 A JP2002325683 A JP 2002325683A JP 3931793 B2 JP3931793 B2 JP 3931793B2
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JP
Japan
Prior art keywords
resin
plasma
surface
processing apparatus
plasma processing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2002325683A
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Japanese (ja)
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JP2004165186A (en
Inventor
圭一 山崎
哲司 柴田
康志 澤田
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松下電工株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743Apparatus for manufacturing layer connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743Apparatus for manufacturing layer connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin supply method and a system in which the resin is not easily supplied to the area where the resin is not required and close contact and bond-ability between the area in which resin is required and the resin can be enhanced. <P>SOLUTION: The resin supply system is configured with a reaction chamber 2 with the single side released as a blowing port 1 and a plurality of electrodes 3, 4. Plasma 5 is formed through generation of discharge within the reaction chamber 2 under the condition evacuated to about atmospheric condition by applying voltage across the electrodes 3 and 4. The plasma 5 is supplied to the surface of an processing object 6 to process the surface of processing object 6 to the condition having affinity with the resin 7 by blowing the plasma 5 generated in the reaction chamber 2 from the blowing port 1. The resin 7 is supplied to the surface of the processing object 6 under the condition having affinity to the resin 7. The resin 7 does not flow and diffuses into the area where the resin is not required. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention is used when bonding or sealing an electronic component such as a semiconductor chip or an optical module to a holding member such as a circuit board.TreeIt relates to a fat supply system.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, electronic parts such as semiconductor chips mounted on a circuit board have been sealed with a liquid resin, and a potting device provided with a tubular container (syringe) for applying a liquid resin for sealing Is used (see, for example, Patent Document 1). Also, when applying conductive resin such as conductive paste to circuit boards, etc., or supplying adhesive to attach and fix optical components such as optical pickups (optical modules) to circuit boards, holding members, etc. Also, the same potting apparatus as described above is used.
[0003]
[Patent Document 1]
JP 2000-114288 A (Claims etc.)
[0004]
[Problems to be solved by the invention]
As described above, when supplying a resin such as a liquid resin, a conductive resin, or an adhesive, it is important that the resin is supplied only to a necessary portion and not to be supplied to other unnecessary portions. It is. That is, for example, in a circuit board on which an electronic component or an optical component is mounted, if a resin such as a liquid resin for sealing or a resin such as an adhesive flows and is supplied to an unnecessary part, the resin enters between the circuits and poor conduction. Or an opaque liquid resin for sealing may adhere to the optical component and deteriorate optical characteristics, and if the conductive resin flows and is supplied to an unnecessary part, the resin May enter between circuits and cause insulation failure. Therefore, measures are taken to adjust the viscosity by changing the resin composition etc. to prevent the resin from flowing and being supplied to unnecessary parts, but by changing the resin composition, the resin adhesion There was a risk that the adhesiveness would deteriorate.
[0005]
The present invention has been made in view of the above points, and it is difficult for the resin to be supplied to a portion where the resin is not required, and the adhesion and adhesion between the portion where the resin is required and the resin can be improved. An object of the present invention is to provide a resin supply method and a resin supply system.
[0006]
[Means for Solving the Problems]
  The resin supply system according to claim 1 of the present invention includes a reaction vessel 2 opened on one side as a blow-out port 1 and a plurality of electrodes 3 and 4, and applies a voltage between the electrodes 3 and 4. As a result, a discharge is generated in the reaction vessel 2 under a pressure close to atmospheric pressure to generate plasma 5, and the plasma 5 generated in the reaction vessel 2 is blown out from the blow-out port 1, whereby the surface of the workpiece 6 is The surface of the workpiece 6 is surface-treated so as to have an affinity for the resin 7 by supplying plasma 5After the surface treatment of the plasma processing apparatus 8 and the surface of the object to be processed 6 in a state compatible with the resin 7, the resin is applied to the surface of the object to be processed 6 in which the state of affinity with the resin 7 is maintained. And a resin supply device 9 for supplying 7, the plasma processing device 8 is formed so as to be movable in the vertical and horizontal directions, and the plasma processing device 8 is moved so as to be partially on the surface of the workpiece 6. When supplying the plasma 5, the plasma processing apparatus 8 is moved in the substantially vertical direction to move the plasma processing apparatus 8.It is characterized by this.
[0015]
  Claims of the invention2The resin supply system according to claim1In addition, as the plasma processing apparatus 8, a plurality of electrodes 3, 4 are provided outside the reaction vessel 2 formed of an insulating material, and a space between the electrodes 3, 4 in the reaction vessel 2 is formed as a discharge space 13. By supplying a plasma generating gas to the discharge space 13 and applying a voltage between the electrodes 3 and 4, a discharge is generated in the discharge space 13 under a pressure near atmospheric pressure, and the plasma 5 generated by this discharge is generated. It is characterized by using what blows out from the discharge space 13.
[0016]
  Claims of the invention3In addition to the first or second aspect, the resin supply system according to the present invention supplies the plasma 5 to the surface of the workpiece 6 by moving the plasma processing apparatus 8, and causes the plasma processing apparatus 8 to follow the resin supply apparatus 9. The resin 7 is supplied to the surface-treated portion of the workpiece 6 by moving.
[0018]
  Claims of the invention4The resin supply system according to claim1Thru3In either of the above, when the plasma 5 is partially supplied to the surface of the workpiece 6 by moving the plasma processing apparatus 8, the plasma processing apparatus 8 is controlled while controlling the discharge state and the discharge stop state of the plasma processing apparatus 8. 8 is moved.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0020]
As shown in FIG. 1, the resin supply system of the present invention includes a plasma processing apparatus 8, a resin supply apparatus 9, support arms 30, 31, a control unit 32, a transfer apparatus 33, a detector 34, and the like. .
[0021]
FIG. 2 shows an example of the plasma processing apparatus 8 described above. The plasma processing apparatus 8 is formed by arranging a plurality (a pair) of plasma generating electrodes 3 and 4 in contact with the outer periphery of the reaction vessel 2 and arranging the electrodes 3 and 4 so as to face each other vertically. In the reaction vessel 2, a space between the electrodes 3 and 4 is formed as a discharge space 13.
[0022]
The reaction vessel 2 is formed of a high melting point insulating material (dielectric material) in a straight, substantially cylindrical shape (circular tube), and its upper end surface is opened as a gas inlet 10 and the reaction vessel 2. Is opened as a substantially circular outlet 1. Examples of the insulating material forming the reaction vessel 2 include glassy materials such as quartz, alumina, and yttria partially stabilized zirconium, and ceramic materials. In the present invention, the average inner diameter s of the reaction vessel 2 is formed to be 0.1 to 20 mm. Since the reaction vessel 2 is formed of the insulating material as described above, it is difficult to form the reaction vessel 2 with an average inner diameter s of less than 0.1 mm. Even if it can be formed, the degree of uniformity of the opening size of the blowout port 1 is lowered, and there is a possibility that uniform plasma processing cannot be performed. Further, when the average inner diameter s of the reaction vessel 2 is larger than 20 mm, it may be difficult to turn on the plasma even when the after-mentioned starting assisting means 15 is used, and the volume of the discharge space 13 becomes too large and the discharge space 13 is increased. Therefore, there is a risk that uniform and stable plasma cannot be generated and uniform plasma processing cannot be performed. Therefore, the average inner diameter s of the reaction vessel 2 is formed to be 0.1 to 20 mm so that the plasma can be reliably lit and the uniform surface treatment can be performed spotwise (locally or partially). It is. 1 and 2, since the reaction vessel 2 is formed in a straight cylindrical shape, the outlet 1 of the reaction vessel 2 is formed with the above average inner diameter s.
[0023]
The plasma generating electrodes 3 and 4 can be formed of a conductive metal material such as copper, aluminum, brass, or stainless steel having high corrosion resistance (such as SUS304). The electrodes 3 and 4 are formed in an annular shape (ring shape), and are inserted so as to surround the reaction vessel 2 with the inner circumferential surface thereof in contact with the outer circumferential surface of the reaction vessel 2. One electrode 3 disposed on the upper side of the pair of electrodes 3 and 4 is connected to a power source 11 that generates a high-frequency voltage via an impedance matching unit 12, and a high voltage is applied to the electrode 3. It is formed as a high voltage electrode. The other electrode 4 disposed on the lower side is formed as a ground electrode that is grounded and has a low voltage. The distance between the electrodes 3 and 4 is preferably set to 3 to 20 mm in order to stably generate plasma.
[0024]
The power source 11 is for applying a voltage between the electrodes 3 and 4, and can thereby apply an electric field to the discharge space 13. The waveform of the voltage applied between the electrodes 3 and 4 can be an alternating voltage waveform without a downtime, a pulsed waveform, or a combination of these. An alternating voltage waveform has a voltage waveform (for example, a sine wave) with little or no pause time (time when the voltage is zero and in a steady state), and a pulsed voltage waveform is a voltage waveform with a pause time. It is what has. The power source 11 is controlled by the control unit 32 so as to switch between a state in which a voltage is applied between the electrodes 3 and 4 and a state in which no voltage is applied, whereby the discharge state in the discharge space 13 of the plasma processing apparatus 8 is changed. The discharge stop state can be controlled.
[0025]
The plasma processing apparatus 8 includes a start assisting means 15 as an assisting means when starting the discharge in the discharge space 13 to turn on the plasma at the time of starting. In FIG. 2, a high voltage pulse generator 45 and a lighting electrode 46 are provided outside the reaction vessel 2 as the starting auxiliary means 15. The high-voltage pulse generator 45 is for generating a high-voltage pulse voltage. For example, the high-voltage pulse generator 45 has a circuit called a blocking oscillator or a one-stone inverter to generate a pulse voltage. The lighting electrode 46 is formed of a metal rod having a sharp tip, and can be formed of the same metal material as the electrodes 3 and 4. The lighting electrode 46 is connected to a high voltage pulse generator 45, and a pulse voltage generated by the high voltage pulse generator 45 is supplied to the lighting electrode 46. The lighting electrode 46 is disposed so that the tip thereof is located downstream (downward) of the outlet 1 of the reaction vessel 2.
[0026]
And when performing surface treatment using the plasma processing apparatus 8, it carries out as follows. First, a gas for generating plasma is introduced from the gas introduction port 10 into the reaction vessel 2 from the top to the bottom, and the voltage is supplied from the power source 11 to the electrode 3 through the impedance matching unit 12 to supply the electrode 3. A voltage such as a high-frequency voltage is applied between the electrodes 4, thereby generating an electric field in the discharge space 13 in the reaction vessel 2. At this time, the voltage applied between the electrodes 3 and 4 is a voltage necessary for continuously generating plasma in the discharge space 13 after the plasma is turned on, and is, for example, 0.5 to 1 kV.
[0027]
Next, a high voltage pulse generator 45 generates a pulse voltage, and the pulse voltage is discharged from the lighting electrode 46 to the grounded electrode 4 through the discharge space 13. The magnitude of the pulse voltage at this time is preferably at least three times the voltage applied between the electrodes 3 and 4, that is, the voltage necessary for continuously generating plasma.
[0028]
When a high voltage pulse voltage is applied to the discharge space 13 in this manner, preionized plasma is generated in the discharge space 13. Thereafter, the preionized plasma is amplified by a voltage applied between the electrodes 3 and 4 (originally, a low voltage that cannot cause dielectric breakdown in the reaction vessel 2), and then is discharged into the discharge space 13 in the reaction vessel 2. Plasma is generated. Thereafter, a dielectric barrier discharge which is a glow-like discharge in the discharge space 13 under a pressure close to atmospheric pressure (93.3 to 106.7 kPa (700 to 800 Torr)) by a high frequency voltage applied between the electrodes 3 and 4. Is generated, and plasma 5 containing plasma active species is continuously generated by converting the plasma generating gas into plasma by dielectric barrier discharge. Then, the plasma 5 generated in this way is jetted (continuously) downward from the blowout port 1 so that the plasma 5 is blown onto the surface of the workpiece 6 disposed below the blowout port 1. To. In this way, the surface of the object to be processed 6 can be surface-treated in a state having affinity with the resin 7. Here, “surface treatment of the surface of the object to be treated 6 in a state having an affinity with the resin 7” means that the organic matter adhering to the surface of the object to be treated 6 is removed and cleaned or the object to be treated is removed. For example, a functional group capable of binding to the resin 7 is formed on the surface of the resin 6. The surface treatment improves adhesion and adhesion between the resin 7 and the surface of the object 6 to be processed. Further, the surface treatment of the workpiece 6 is performed only partially or locally on the portion where the resin 7 needs to be supplied, and the plasma 5 is not supplied to the portion where the resin 7 does not need to be supplied. The surface treatment is not performed.
[0029]
In order to generate the plasma 5 continuously and stably during the above surface treatment, the voltage applied between the electrodes 3 and 4 is a high frequency having a frequency (frequency of the electric field applied to the discharge space 13) of 1 kHz to 200 MHz. It is preferable to use a voltage. Moreover, in order to generate the plasma 5 continuously and stably, the density of the applied power supplied to the discharge space 13 is 20 to 3500 W / cm.3It is preferable to set to.
[0030]
Examples of the plasma generating gas used during the surface treatment include simple gases such as argon, nitrogen, helium, oxygen, air, and carbon dioxide, or mixed gases obtained by mixing a plurality of these gases. Furthermore, in order to improve the adhesion with the resin 7, an appropriate amount of a reactive gas such as ammonia, hydrogen or water vapor can be added to the single gas or mixed gas.
[0031]
In addition, as the functional group formed on the surface of the workpiece 6 by the above surface treatment, when the portion of the workpiece 6 to be surface-treated is a metal, for example, M-O, M- OH (M is a metal or an inorganic element on the surface of the object 6 to be processed, specifically, Cu, Al, Si, Cr, etc.) is selected from one or more kinds, and the object 6 to be processed In the case where the portion subjected to the surface treatment is an organic substance, it is one or more selected from —OCOO—, —COO—, —C═O, and —C—O—.
[0032]
As the resin supply device 9 used in the present invention, for example, a device capable of discharging the resin 7 by a constant amount and for a predetermined time by air pressure can be used, but the resin 7 is discharged by a predetermined amount and a predetermined time by other methods. What can be used may be used. The resin supply device 9 shown in FIG. 3 supplies air to the barrel (syringe) 41 by the controller 40, and the pressure and supply time of the air supplied to the barrel 41 are adjusted by the controller 40. Thereby, the resin 7 can be discharged for a certain amount and for a certain time. The upper surface opening of the barrel 41 is sealed with a cap 42 and an adapter 43 is attached to the upper end of the barrel 41, and the adapter 43 and the controller 40 are connected by a connecting pipe 44. Further, a nozzle (needle) 45 is provided at the lower surface opening of the barrel 41. Further, the barrel 41 is filled with the resin 7 and the barrel 41 is provided with a plunger 46. Reference numeral 51 denotes a cap used when closing the lower surface opening of the barrel 41. Also, the resin 7 is a sealing material for sealing an electronic component such as a semiconductor chip or an optical component such as an optical pickup, an adhesive for bonding the electronic component or the optical component, or a conductive resin such as a conductive paste. In addition, a conventionally known one can be used.
[0033]
When the resin supply device 9 supplies the resin 7 to the surface of the workpiece 6, air is pumped from the controller 40 into the barrel 41 through the connection pipe 44, the adapter 43, and the cap 42. Then, the plunger 46 in the barrel 41 is pushed down to press the resin 7 from above, and by this pressing, the resin 7 is discharged from the tip of the nozzle 45 and supplied to the surface of the workpiece 6.
[0034]
FIG. 4 shows another example of the resin supply device 9. The resin supply device 9 supplies air to the cartridge 47 filled with the resin 7 by the controller 40, and the pressure of the air supplied to the cartridge 47 is adjusted by the controller 40. The cartridge 47 is held by a holder 48 and the upper surface opening of the cartridge 47 is sealed with a cap 42. An adapter 43 is attached to the upper ends of the cartridge 47 and the holder 48, and the adapter 43 and the controller 40 are connected by a connecting pipe 44. In addition, a nozzle (needle) 45 is provided through a needle adapter 50 in the lower surface opening of the cartridge 47 protruding from the lower end of the holder 48. Further, a plunger 46 is provided in the cartridge 47.
[0035]
When the resin supply device 9 supplies the resin 7 to the surface of the workpiece 6, air is pumped from the controller 40 into the cartridge 47 through the connection pipe 44, the adapter 43, and the cap 42. The plunger 46 in the cartridge 47 is pushed down to press the resin 7 from the upper side. By this pressing, the resin 7 is precisely controlled and discharged from the tip of the nozzle 45 and applied to the surface of the object 6 to be supplied. It is what is done.
[0036]
Here, the air pressure supplied from the controller 40 to the barrel 41 and the cartridge 47 varies depending on the type of the resin 7 and the like, but can be set to 10 to 1000 kPa, for example. The air supply time (resin 7 discharge time) varies depending on the type of resin 7 and the amount of resin 7 supplied, but is set to 0.01 to 60 seconds, preferably 0.1 to 10 seconds, for example. be able to.
[0037]
The resin supply system of the present invention is provided with a pair of support arms 30 and 31. These support arms 30, 31 are attached to a support column 71 that is formed long in a substantially vertical direction, a rear support piece 52 that is attached to the support column 71 so as to be vertically movable and rotatable in a horizontal plane, and a rear support piece 52. On the other hand, the front support piece 53 is mounted so as to be able to move in and out in a substantially horizontal direction, and a grip portion 54 is attached to the front end of the front support piece 53. The support arms 30 and 31 are provided with a driving machine such as a motor. By controlling the operation of the driving machine by the control unit 32, the rear support piece 52 is driven in the vertical direction, the rotational drive, and the front support piece 53. Can be driven.
[0038]
Then, the reaction vessel 2 of the plasma processing apparatus 8 is held by the holding portion 54 of one support arm 30, so that the reaction vessel 2 of the plasma processing apparatus 8 is supported by one support arm 30 and the other support is supported. By holding the holder 48 holding the barrel 41 or the cartridge 47 of the resin supply device 9 on the holding portion 54 of the arm 31, the barrel 41 or the cartridge 47 of the resin supply device 9 is supported by the other support arm 31. I have to. Accordingly, the reaction vessel 2 of the plasma processing apparatus 8 and the barrel 41 or the cartridge 47 of the resin supply apparatus 9 are movable in the vertical direction and the horizontal direction by the vertical drive and rotational drive of the rear support piece 52 and the drive of the front support piece 53. That is, the reaction vessel 2 and the barrel 41 or the cartridge 47 are formed to be movable under the control of the control unit 32.
[0039]
The control unit 32 is a computer such as a microcomputer, a microprocessor, a CPU, or a personal computer, and includes a program for controlling the power supply 11, a program for controlling the support arms 30 and 31, a program for controlling the transport device 33, and the like. Is formed.
[0040]
The conveyance device 33 can be formed by a belt conveyor that can carry the object 6 to be processed and can be formed by a horizontally movable table or the like. In the transport device 33, the transport speed of the workpiece 6 is controlled by the control unit 32. The detector 34 is formed by a camera or the like, and is disposed above the transport device 33, and recognizes an alignment marker or the like provided on the workpiece 6 and supplies a plasma supply portion of the workpiece 6 And the resin supply part. The detection result by the detector 34 is sent to the control unit 32, and the control of the support arms 30 and 31 is performed by the control unit 32 based on the detection result.
[0041]
And when supplying the resin 7 to the to-be-processed object 6 using the resin supply system of this invention, it carries out as follows. First, the workpiece 6 is transported by the transport device 33 and the workpiece 6 is disposed below the plasma processing device 8. Next, the plasma 5 is generated by the plasma processing apparatus 8 as described above, and the plasma 5 is blown out from the blow-out port 1 of the reaction vessel 2 and sprayed onto the surface of the process-target 6, whereby the surface of the process-target 6. At this time, the control unit 32 controls the support arm 30 that supports the reaction vessel 2 to move the reaction vessel 2, or the control unit 32 controls the power source 11 to change the discharge state in the discharge space 13. By changing the discharge stop state, the surface treatment is performed by spraying the plasma 5 only on the portion of the workpiece 6 that requires the surface treatment. Further, when the reaction vessel 2 is moved by the support arm 30, it is preferable that the reaction vessel 2 is moved up in a substantially vertical direction, so that the reaction vessel 2 passes above a portion where surface treatment is unnecessary. In this case, the distance between the outlet 1 of the reaction vessel 2 and the surface of the workpiece 6 is increased, and the spraying pressure of the plasma 5 is lowered. As a result, the effect of the plasma 5 is necessary ( Only the portion that requires surface treatment) and unnecessary portions are not subjected to surface treatment.
[0042]
Next, the resin 7 is discharged and supplied from the resin supply device 9 to the portion where the surface treatment of the object 6 is performed. At this time, the control unit 32 controls the support arm 31 that supports the barrel 41 or the cartridge 47 to move the barrel 41 or the cartridge 47, or the controller 40 controls the discharge amount of the resin 7 from the nozzle 45. Thus, the resin 7 is supplied only to the portion of the workpiece 6 that has been subjected to the surface treatment. Further, the surface of the object to be processed having an affinity for the resin 7 as described above is that the surface of the object to be processed 6 is cleaned (cleaned) with the plasma 5 or bonded to the surface of the object 6 to be processed. However, when the surface treatment target 6 is kept in the air for a long time, organic matter floating in the air adheres to the surface of the treatment target 6 and is contaminated. Or the functional groups formed on the surface of the object to be processed 6 decrease with time, and as a result, the effect is reduced by the surface treatment, and the adhesion and adhesion between the object to be processed 6 and the resin 7 are reduced. May decrease. Although such a phenomenon depends on the workpiece 6, the effect of the surface treatment deteriorates on the order of minutes if it is fast.
[0043]
Therefore, it is preferable to supply the resin 7 to the surface of the workpiece 6 while maintaining the surface of the workpiece 6 after the surface treatment in a state having an affinity with the resin 7. The timing for supplying the resin 7 to the surface of the treated product 6 is set immediately after the surface treatment, preferably within 1 minute, more preferably within 30 seconds. And in order to supply the resin 7 to the surface of the workpiece 6 immediately after the surface treatment in this way, the barrel 41 or the cartridge 47 of the resin supply device 9 is made to follow the movement of the reaction vessel 2 of the plasma processing device 8. Preferably, the support arms 30 and 31 are controlled by the control unit 32 so that the reaction vessel 2 and the barrel 41 or the cartridge 47 are moved in this manner.
[0044]
The object 6 to which the resin 7 is supplied as described above is transferred to the next process by the transfer device 33. Along with this, the untreated workpiece 6 is disposed below the plasma processing apparatus 8 and the same surface treatment as described above is started. In this way, the object 6 can be continuously surface-treated and the resin 7 can be supplied to the object 6.
[0045]
And in this invention, after supplying the plasma 5 only to the part which needs to supply the resin 7 of the to-be-processed object 6 and surface-treating the surface of the to-be-processed object 6 in a state with affinity with resin, Since the resin 7 is supplied only to the treated part, the resin 7 does not flow or wrap around the unnecessary part, and the resin 7 can be made difficult to be supplied to the unnecessary part. is there. That is, since the wettability of the resin 7 is poor in the portion that is not subjected to the surface treatment with the plasma 5, the flowability of the resin 7 is different between the portion that is not the surface-treated portion, and this is necessary to provide contrast. The resin 7 can be applied only to the portion. Moreover, since the surface-treated portion is cleaned or a functional group is formed, the adhesion and adhesion between the portion requiring the resin 7 and the resin 7 can be improved.
[0046]
【Example】
Example 1
The resin supply system shown in FIG. 1 was used. The reaction vessel 2 of the plasma processing apparatus 8 has an outer diameter of 5 mm and an inner diameter of 3 mm and is made of quartz. On the outer surface of the reaction vessel 2, electrodes 3 and 4 are arranged above and below the outlet 1, and one electrode 3 is connected to a power source 11 and a high voltage is applied to the other electrode 4. Is formed as a ground electrode to be grounded. As the power source 11 for generating a high frequency, a power source that oscillates a sinusoidal voltage having a frequency of 180 kHz was used. In addition, the position of the reaction vessel 2 is controlled by the control unit 32 and is transported through a preprogrammed location. In the resin supply device 9, the air pressure and the resin supply time are controlled by the controller 40, and the position of the barrel 41 or the cartridge 47 is controlled by the control unit 32. Resin 7 is supplied. Then, argon was introduced into the reaction vessel 2 at 1.5 liters / minute and oxygen was introduced at 0.02 liters / minute, and plasma 5 was generated at a power of 200 W.
[0047]
As shown in FIG. 5, the workpiece 6 is a substrate 62 on which a semiconductor chip (IC) 60 and an optical component (light receiving element) 61 are mounted. Surface treatment was performed by spraying plasma 5 every second. Next, immediately after applying this surface treatment to the surface-treated portion, the resin supply device 9 that discharges the resin 7 for a certain period of time using air pressure is used to apply 100 kPa to each surface-treated portion of black epoxy resin (sealing material) for 1 second. And applied. As a result, only the portion on which the semiconductor chip 60 was mounted was sealed with the above-described sealing material. The amount of resin 7 applied was 500 mg on each semiconductor chip 60.
[0048]
Next, the surface treatment was performed by spraying plasma 5 on the portions (four locations) on which the optical components were mounted for 1 second. Next, using the same resin supply apparatus 9 as described above, a transparent epoxy resin (transparent sealing material) was applied to each surface-treated portion for 1 second at 100 kPa. As a result, only the portion on which the optical component 61 was mounted was sealed with the transparent sealing material. The coating amount was 300 mg for each optical component 61.
[0049]
Moreover, any sealing material was not apply | coated to the part which is not surface-treated.
(Example 2)
The voltage applied between the electrodes 3 and 4 was a pulse voltage having a rise and fall time of 10 μsec and a repetition frequency of 200 kHz, and the electric field strength between the voltages 3 and 4 was 50 kV / cm. Also, nitrogen was introduced into the reaction vessel 2 at 1.5 liter / min and oxygen at 0.02 liter / min, and plasma 5 was generated with a power of 200 W. Except for these, the treatment was performed in the same manner as in Example 1.
[0050]
The workpiece 6 is a case 65 which is a relay part as shown in FIG. 6A, and the reaction vessel 2 of the plasma processing apparatus 8 is moved as shown by an arrow in FIG. The inner peripheral surface of the case 65 was surface-treated by blowing the plasma 5 through the opening on the upper surface. The processing time was 1 second. Next, the main body 66 provided with the relay terminals 67 and the like is inserted into the case 65, and then a one-component epoxy adhesive is injected into the case 65 by the resin supply device 9 at 80 kPa for 1 second and applied. did. The coating amount was 100 mg. Thereafter, the above-described adhesive was heated and cured to form a relay 68 as shown in FIG.
[0051]
The presence or absence of bubbles was observed by immersing the above relay 68 in Sumitomo 3M Fluorinert (70 ° C., 3 minutes). When there was no surface treatment, bubbles were generated instantly, but when the case-treated case 65 was used, no bubbles were observed even when immersed for 3 minutes. In addition, as a result of cutting the relay 68 and observing the cross section, when the surface-treated case 65 was used, the adhesive spilled into the gap between the case 65 and the main body 66, but the untreated case 65 was used. In some cases, the gap did not sufficiently wrap around the gap and contained bubbles.
[0052]
【The invention's effect】
  As described above, the invention of claim 1 of the present invention comprises a reaction vessel having one side opened as an outlet and a plurality of electrodes, and a pressure in the vicinity of atmospheric pressure by applying a voltage between the electrodes. A plasma is generated by generating an electric discharge in the reaction vessel below, and the plasma generated in the reaction vessel is blown out from the outlet, thereby supplying the plasma to the surface of the object to be treated and resin the surface of the object to be treated. Surface treatment with affinityFor supplying a resin to the surface of the object to be processed that has been maintained in a state compatible with the resin after the surface of the object to be processed is surface-treated in a state compatible with the resin. The plasma processing apparatus is formed so as to be movable in the vertical and horizontal directions, and when the plasma processing apparatus is moved to supply plasma partially to the surface of the workpiece, Move the plasma processing device by raising it in a substantially vertical direction.Therefore, after supplying a plasma to a portion of the object to be processed that needs to be supplied with resin to surface-treat the surface of the object to be processed in a state compatible with the resin, the resin is supplied to the surface-treated part. Therefore, the resin does not flow or wrap around the unnecessary portion, and the resin can be made difficult to be supplied to the unnecessary portion, and the surface-treated portion is cleaned. Since a functional group is formed, the adhesiveness and adhesiveness between the resin-required portion and the resin can be improved.Further, when plasma is partially supplied to the surface of the object to be processed by moving the plasma processing apparatus, the plasma processing apparatus is moved in a substantially vertical direction so that the surface processing is unnecessary. When the plasma processing apparatus passes through the plasma processing apparatus, the distance between the plasma processing apparatus and the surface of the object to be processed is increased, and the plasma spraying pressure is reduced. As a result, the plasma processing effect is required. In addition, the unnecessary portion can be prevented from being surface-treated.
[0061]
  Further, the claims of the present invention2As a plasma processing apparatus, a plurality of electrodes are provided outside a reaction vessel formed of an insulating material as a plasma processing apparatus, a space between the electrodes in the reaction vessel is formed as a discharge space, and a plasma generating gas is supplied to the discharge space. In addition, by applying a voltage between the electrodes, a discharge is generated in the discharge space under a pressure near atmospheric pressure, and a plasma generated by the discharge is blown out of the discharge space. In this case, the surface treatment can be performed under a pressure in the vicinity of the atmospheric pressure, and the surface treatment can be easily performed as compared with the case of reducing the pressure.
[0062]
  Further, the claims of the present invention3According to the present invention, the plasma is supplied to the surface of the object to be processed by moving the plasma processing apparatus, and the resin is supplied to the surface-treated portion of the object to be processed by moving the resin supply apparatus following the plasma processing apparatus. Since it supplies, resin can be supplied before the effect by surface treatment deteriorates, and the adhesiveness and adhesiveness of resin with respect to the surface of a to-be-processed object can be improved further.
[0064]
  Further, the claims of the present invention4According to the invention, when the plasma is partially supplied to the surface of the workpiece by moving the plasma processing apparatus, the plasma processing apparatus is moved while controlling the discharge state and the discharge stop state of the plasma processing apparatus. The surface of the object to be processed can be partially or locally surface-treated, and plasma can be prevented from being supplied to a portion that does not require surface treatment.
[Brief description of the drawings]
FIG. 1 is a schematic view showing an example of an embodiment of the present invention.
FIG. 2 is a schematic view showing an example of the above plasma processing apparatus.
FIG. 3 is a partially broken schematic view showing an example of the above-described resin supply apparatus.
FIG. 4 is a schematic diagram of a part of the example of another resin supply apparatus according to the present invention, in which a part thereof is broken.
FIG. 5 is a plan view showing an example of the object to be processed.
6A and 6B show examples of other objects to be processed, wherein FIG. 6A is an exploded perspective view, FIG. 6B is a plan view, and FIG. 6C is a perspective view.
[Explanation of symbols]
1 Outlet
2 reaction vessels
3 electrodes
4 electrodes
5 Plasma
6 Workpiece
7 Resin
8 Plasma processing equipment
9 Resin feeder
13 Discharge space

Claims (4)

  1. Consists of a reaction vessel open on one side as a blowout port and multiple electrodes. By applying a voltage between the electrodes, a discharge is generated in the reaction vessel under a pressure near atmospheric pressure to generate plasma. and, by blowing the plasma generated in the reaction vessel from the outlet, the plasma treatment for the surface treatment of the surface of the object to be treated by supplying the plasma to the surface of the object in a state where a resin affinity An apparatus and a resin supply device for supplying the resin to the surface of the object to be processed in which the state of affinity to the resin is maintained after the surface of the object to be processed is subjected to a surface treatment with the resin. The plasma processing apparatus is formed so as to be movable in the vertical and horizontal directions, and when the plasma processing apparatus is moved, plasma is partially supplied to the surface of the object to be processed. Resin supply system characterized by moving the plasma processing apparatus substantially increased in the vertical direction.
  2. As a plasma processing apparatus, a plurality of electrodes are provided outside a reaction vessel formed of an insulating material, a space between the electrodes in the reaction vessel is formed as a discharge space, a plasma generating gas is supplied to the discharge space, and between the electrodes 2. The method according to claim 1, wherein a voltage is applied to the discharge space to cause discharge in the discharge space under a pressure near atmospheric pressure, and a plasma generated by the discharge is blown out of the discharge space. Resin supply system.
  3. Plasma is supplied to the surface of the object to be processed by moving the plasma processing apparatus, and resin is supplied to the surface-treated part of the object to be processed by moving the resin supply apparatus following the plasma processing apparatus. The resin supply system according to claim 1 or 2, characterized by the above.
  4. The plasma processing apparatus is moved while controlling a discharge state and a discharge stop state of the plasma processing apparatus when the plasma is partially supplied to the surface of the workpiece by moving the plasma processing apparatus. Item 4. The resin supply system according to any one of Items 1 to 3.
JP2002325683A 2002-11-08 2002-11-08 Resin supply system Expired - Fee Related JP3931793B2 (en)

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JP2002325683A JP3931793B2 (en) 2002-11-08 2002-11-08 Resin supply system

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JP2007184163A (en) * 2006-01-06 2007-07-19 Seiko Epson Corp Plasma processing apparatus
JP4702157B2 (en) * 2006-04-17 2011-06-15 パナソニック株式会社 IC component mounting method and die bonding apparatus
US8803001B2 (en) * 2011-06-21 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process
JP5543410B2 (en) * 2011-07-12 2014-07-09 有限会社フェザークラフト Arrow processing device, arrow processing system, and arrow processing method
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding
US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules

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