JP4702157B2 - Ic部品実装方法とダイボンディング装置 - Google Patents
Ic部品実装方法とダイボンディング装置 Download PDFInfo
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Description
まず、本発明のIC部品実装方法に係る第1の実施形態について、図1〜図7を参照して説明する。
次に、本発明のIC部品実装方法に係る第2の実施形態について、図8、図9を参照して説明する。
次に、本発明のダイボンディング装置に係る第3の実施形態について、図10、図11を参照して説明する。
次に、本発明の第4の実施形態について、図12〜図14を参照して説明する。なお、本実施形態は上記第2の実施形態のIC部品実装方法に係るもので、IC部品3を搭載するランド4に接着剤6を塗布する前にその周囲の電極5との間の領域4aを撥液面9に処理する工程の他の構成例を示すものである。
2 基板
3 IC部品
4 ランド(搭載領域)
4a ランド4と電極5の間の領域
5 電極
6 接着剤
7 ワイヤ
8 組成液
9 撥液面
10 大気圧プラズマ発生装置
11 プラズマ
23 ガス供給管
24 不活性ガス
25 反応性ガス
30 ダイボンディング装置
31 搬送手段
35 塗布手段
36 部品搭載手段
38 大気圧プラズマ発生手段
39 プラズマ移動手段
50 プラズマ処理手段
51 真空処理室
52 マスク
60 ダイボンディング装置
61 搬送手段
Claims (6)
- IC部品を基板に搭載して接着した後、IC部品の電極と基板の電極をワイヤで接続するIC部品実装方法において、前記ワイヤで接続する前に、基板のIC部品搭載領域と電極との間の領域のみをプラズマ処理し、IC部品を接着する接着剤の組成液に対する撥液性又は親液性を持たせるものであって、
前記プラズマ処理は、プラズマを発生する不活性ガスと、少なくともフッ素系ガス、C及びFを含むガス、C及びHを含むガス、酸素ガスの内の少なくとも1つを含む反応性ガスを用いて基板のIC部品搭載領域と電極との間の領域の表面改質を行い、
プラズマ発生部に前記不活性ガスを供給し、発生したプラズマに前記反応性ガスを混合することを特徴とするIC部品実装方法。 - IC部品を基板に搭載して接着した後、IC部品の電極と基板の電極をワイヤで接続するIC部品実装方法において、前記ワイヤで接続する前に、基板のIC部品搭載領域と電極との間の領域のみをプラズマ処理し、IC部品を接着する接着剤の組成液に対する撥液性又は親液性を持たせるものであって、
前記プラズマ処理は、プラズマを発生する不活性ガスと、少なくともフッ素系ガス、C及びFを含むガス、C及びHを含むガス、酸素ガスの内の少なくとも1つを含むガスを用いて基板のIC部品搭載領域と電極との間の領域上に撥液性又は親液性の膜を成膜し、
プラズマ発生部に前記不活性ガスを供給し、発生したプラズマに前記反応性ガスを混合することを特徴とするIC部品実装方法。 - 前記プラズマ処理は、前記IC部品搭載領域に前記接着剤を塗布する前又は塗布後に、前記IC部品搭載領域と前記電極との間の領域のみに大気圧プラズマを吹き付けて行うことを特徴とする請求項1又は2に記載のIC部品実装方法。
- 基板を搬送して位置決めする搬送手段と、基板のIC部品搭載領域内に接着剤を塗布する塗布手段と、基板上にIC部品を搭載する部品搭載手段と、大気圧プラズマ発生手段と、前記大気圧プラズマ発生手段を基板のIC部品搭載領域と電極との間の領域のみに沿って移動させるプラズマ移動手段とを備え、
前記大気圧プラズマ発生手段は、プラズマ発生部にプラズマを発生する不活性ガスを供給し、発生したプラズマに反応性ガスを混合するように構成されていることを特徴とするダイボンディング装置。 - 前記不活性ガスは、アルゴン、ネオン、キセノン、ヘリウム、窒素ガスから選択された単独ガス又は複数の混合ガスからなることを特徴とする請求項4記載のダイボンディング装置。
- 前記反応性ガスは、フッ素系ガス、C及びFを含むガス、C及びHを含むガス、酸素ガスの内の少なくとも1つを含むことを特徴とする請求項4記載のダイボンディング装置。
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US8803001B2 (en) * | 2011-06-21 | 2014-08-12 | Toyota Motor Engineering & Manufacturing North America, Inc. | Bonding area design for transient liquid phase bonding process |
US10058951B2 (en) | 2012-04-17 | 2018-08-28 | Toyota Motor Engineering & Manufacturing North America, Inc. | Alloy formation control of transient liquid phase bonding |
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JP5891157B2 (ja) * | 2012-09-19 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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JPH08264678A (ja) * | 1995-03-27 | 1996-10-11 | Sharp Corp | 樹脂封止型半導体装置 |
JP2002083831A (ja) * | 2000-09-08 | 2002-03-22 | Matsushita Electric Ind Co Ltd | チップの実装方法及びチップの実装体 |
JP2003092374A (ja) * | 2001-09-18 | 2003-03-28 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2004165186A (ja) * | 2002-11-08 | 2004-06-10 | Matsushita Electric Works Ltd | 樹脂供給方法及び樹脂供給システム |
JP2004186707A (ja) * | 2004-03-16 | 2004-07-02 | Renesas Technology Corp | 半導体装置の製造方法 |
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