JP2013201211A5 - - Google Patents

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Publication number
JP2013201211A5
JP2013201211A5 JP2012067662A JP2012067662A JP2013201211A5 JP 2013201211 A5 JP2013201211 A5 JP 2013201211A5 JP 2012067662 A JP2012067662 A JP 2012067662A JP 2012067662 A JP2012067662 A JP 2012067662A JP 2013201211 A5 JP2013201211 A5 JP 2013201211A5
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JP
Japan
Prior art keywords
film
crystallization
electrode
oxygen pressure
drain electrode
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Pending
Application number
JP2012067662A
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English (en)
Japanese (ja)
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JP2013201211A (ja
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Publication date
Application filed filed Critical
Priority to JP2012067662A priority Critical patent/JP2013201211A/ja
Priority claimed from JP2012067662A external-priority patent/JP2013201211A/ja
Priority to TW102105887A priority patent/TWI500165B/zh
Priority to KR1020130027981A priority patent/KR20130108133A/ko
Priority to CN2013100846434A priority patent/CN103325817A/zh
Priority to US13/835,405 priority patent/US8957416B2/en
Publication of JP2013201211A publication Critical patent/JP2013201211A/ja
Publication of JP2013201211A5 publication Critical patent/JP2013201211A5/ja
Pending legal-status Critical Current

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JP2012067662A 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器 Pending JP2013201211A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012067662A JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器
TW102105887A TWI500165B (zh) 2012-03-23 2013-02-20 薄膜電晶體、其製造方法及電子設備
KR1020130027981A KR20130108133A (ko) 2012-03-23 2013-03-15 박막 트랜지스터, 그 제조 방법 및 전자 기기
CN2013100846434A CN103325817A (zh) 2012-03-23 2013-03-15 薄膜晶体管、薄膜晶体管制造方法及电子设备
US13/835,405 US8957416B2 (en) 2012-03-23 2013-03-15 Thin film transistor, manufacturing method of the same and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012067662A JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器

Publications (2)

Publication Number Publication Date
JP2013201211A JP2013201211A (ja) 2013-10-03
JP2013201211A5 true JP2013201211A5 (OSRAM) 2015-04-02

Family

ID=49194473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012067662A Pending JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器

Country Status (5)

Country Link
US (1) US8957416B2 (OSRAM)
JP (1) JP2013201211A (OSRAM)
KR (1) KR20130108133A (OSRAM)
CN (1) CN103325817A (OSRAM)
TW (1) TWI500165B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10109707B2 (en) * 2014-03-31 2018-10-23 Flosfia Inc. Crystalline multilayer oxide thin films structure in semiconductor device
EP2933825B1 (en) 2014-03-31 2017-07-05 Flosfia Inc. Crystalline multilayer structure and semiconductor device
US9634097B2 (en) * 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
TWI611587B (zh) * 2016-08-31 2018-01-11 明新科技大學 氧化物薄膜電晶體
WO2018111247A1 (en) 2016-12-13 2018-06-21 Intel Corporation Passivation dielectrics for oxide semiconductor thin film transistors
KR102304800B1 (ko) * 2019-12-17 2021-09-24 한양대학교 산학협력단 Igo 채널층 기반의 메모리 장치 및 그 제조방법
JP7326795B2 (ja) * 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP7180492B2 (ja) * 2019-03-26 2022-11-30 Tdk株式会社 誘電体膜および電子部品
US11616057B2 (en) 2019-03-27 2023-03-28 Intel Corporation IC including back-end-of-line (BEOL) transistors with crystalline channel material
JPWO2023063352A1 (OSRAM) * 2021-10-14 2023-04-20
JPWO2024042997A1 (OSRAM) * 2022-08-25 2024-02-29

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3913756B2 (ja) * 2002-05-22 2007-05-09 雅司 川崎 半導体装置およびそれを用いる表示装置
CN101309864B (zh) * 2005-11-18 2012-06-27 出光兴产株式会社 半导体薄膜及其制造方法以及薄膜晶体管
KR101612130B1 (ko) * 2007-03-20 2016-04-12 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 산화물 반도체막 및 반도체 디바이스
JP5242083B2 (ja) 2007-06-13 2013-07-24 出光興産株式会社 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
US8039405B2 (en) * 2008-02-01 2011-10-18 Ricoh Company, Ltd. Conductive oxide-deposited substrate and method for producing the same, and MIS laminated structure and method for producing the same
JP5747401B2 (ja) * 2009-09-04 2015-07-15 住友化学株式会社 半導体基板、電界効果トランジスタ、集積回路、及び半導体基板の製造方法
JP2011066070A (ja) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd 多結晶薄膜、その成膜方法、及び薄膜トランジスタ
KR101945171B1 (ko) 2009-12-08 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2011159697A (ja) * 2010-01-29 2011-08-18 Dainippon Printing Co Ltd 薄膜トランジスタ搭載基板、その製造方法及び画像表示装置
WO2011129456A1 (en) * 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing semiconductor device
KR102143469B1 (ko) * 2010-07-27 2020-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2012169344A (ja) * 2011-02-10 2012-09-06 Sony Corp 薄膜トランジスタならびに表示装置および電子機器

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