JP2013159671A - 硬化性シリコーン組成物、その硬化物、および光半導体装置 - Google Patents

硬化性シリコーン組成物、その硬化物、および光半導体装置 Download PDF

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JP2013159671A
JP2013159671A JP2012021280A JP2012021280A JP2013159671A JP 2013159671 A JP2013159671 A JP 2013159671A JP 2012021280 A JP2012021280 A JP 2012021280A JP 2012021280 A JP2012021280 A JP 2012021280A JP 2013159671 A JP2013159671 A JP 2013159671A
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group
mass
parts
component
sio
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JP2012021280A
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JP2013159671A5 (enExample
Inventor
Makoto Yoshitake
誠 吉武
Ryosuke Yamazaki
亮介 山▲崎▼
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DuPont Toray Specialty Materials KK
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Dow Corning Toray Co Ltd
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Priority to JP2012021280A priority Critical patent/JP2013159671A/ja
Priority to KR1020147023470A priority patent/KR20140130135A/ko
Priority to EP13706078.6A priority patent/EP2809727A1/en
Priority to US14/375,977 priority patent/US9045641B2/en
Priority to PCT/JP2013/052965 priority patent/WO2013115416A1/en
Priority to TW102104073A priority patent/TW201333119A/zh
Priority to CN201380010318.1A priority patent/CN104136545A/zh
Publication of JP2013159671A publication Critical patent/JP2013159671A/ja
Publication of JP2013159671A5 publication Critical patent/JP2013159671A5/ja
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2012021280A 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置 Abandoned JP2013159671A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012021280A JP2013159671A (ja) 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置
KR1020147023470A KR20140130135A (ko) 2012-02-02 2013-02-01 경화성 실리콘 조성물, 이의 경화물, 및 광반도체 장치
EP13706078.6A EP2809727A1 (en) 2012-02-02 2013-02-01 Curable silicone composition, cured product thereof, and optical semiconductor device
US14/375,977 US9045641B2 (en) 2012-02-02 2013-02-01 Curable silicone composition, cured product thereof, and optical semiconductor device
PCT/JP2013/052965 WO2013115416A1 (en) 2012-02-02 2013-02-01 Curable silicone composition, cured product thereof, and optical semiconductor device
TW102104073A TW201333119A (zh) 2012-02-02 2013-02-01 硬化性矽酮組合物、其硬化產品及光半導體裝置
CN201380010318.1A CN104136545A (zh) 2012-02-02 2013-02-01 可固化有机硅组合物、其固化产物及光学半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012021280A JP2013159671A (ja) 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置

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JP2013159671A true JP2013159671A (ja) 2013-08-19
JP2013159671A5 JP2013159671A5 (enExample) 2015-03-05

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JP2012021280A Abandoned JP2013159671A (ja) 2012-02-02 2012-02-02 硬化性シリコーン組成物、その硬化物、および光半導体装置

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US (1) US9045641B2 (enExample)
EP (1) EP2809727A1 (enExample)
JP (1) JP2013159671A (enExample)
KR (1) KR20140130135A (enExample)
CN (1) CN104136545A (enExample)
TW (1) TW201333119A (enExample)
WO (1) WO2013115416A1 (enExample)

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JP2014533765A (ja) * 2011-11-25 2014-12-15 エルジー・ケム・リミテッド 硬化性組成物
WO2015186322A1 (ja) * 2014-06-03 2015-12-10 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、および光半導体装置
WO2015194389A1 (ja) * 2014-06-18 2015-12-23 信越化学工業株式会社 基材密着性に優れるシリコーン粘着剤組成物及び粘着性物品
WO2016038836A1 (ja) * 2014-09-10 2016-03-17 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP2018165348A (ja) * 2017-03-29 2018-10-25 信越化学工業株式会社 高耐熱性付加硬化型シリコーン樹脂組成物
JP2019014800A (ja) * 2017-07-05 2019-01-31 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 硬化性ポリオルガノシロキサン組成物
JP2019504918A (ja) * 2016-02-23 2019-02-21 ダウ シリコーンズ コーポレーション 高硬度の硬化性シリコーン組成物及びそれから製造した複合物品
CN109694579A (zh) * 2017-10-20 2019-04-30 信越化学工业株式会社 硅酮组合物、硅酮橡胶固化物、和电力线缆
JP2019524959A (ja) * 2016-08-12 2019-09-05 ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG 硬化性有機ポリシロキサン組成物、封止剤、および半導体デバイス
CN110903695A (zh) * 2019-12-23 2020-03-24 江门市阪桥电子材料有限公司 一种具有高反射性能的硅胶油墨
JP2020524189A (ja) * 2017-06-19 2020-08-13 ダウ シリコーンズ コーポレーション 光学部品を移送成形または射出成形するための液体シリコーン組成物、それから作製される光学部品、およびその方法

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TWI577737B (zh) * 2012-07-27 2017-04-11 Lg化學股份有限公司 可固化組成物
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JP6348446B2 (ja) * 2015-04-15 2018-06-27 信越化学工業株式会社 分岐状オルガノポリシロキサン及びその製造方法
JP6313722B2 (ja) * 2015-04-15 2018-04-18 信越化学工業株式会社 付加硬化型シリコーン組成物および半導体装置
EP3350554A4 (en) * 2015-09-18 2019-06-12 Slantrange, Inc. SYSTEMS AND METHOD FOR DETERMINING STATISTICS OF PLANT STOCKS BASED ON OPTICAL OVERHEAD MEASUREMENTS
EP3473675A1 (en) 2015-12-22 2019-04-24 Shin-Etsu Chemical Co., Ltd. Addition-curable silicone resin composition and a semiconductor device
JP7021049B2 (ja) * 2018-10-30 2022-02-16 信越化学工業株式会社 付加硬化型シリコーン樹脂組成物、その硬化物、及び光半導体装置
CN113614174B (zh) 2019-03-29 2023-04-04 陶氏东丽株式会社 固化性有机硅组合物、其固化物及其制造方法
JP7820893B2 (ja) 2020-03-30 2026-02-26 ダウ・東レ株式会社 硬化性ホットメルトシリコーン組成物、その硬化物、及び前記組成物又は硬化物を含む積層体
US12139634B2 (en) * 2020-04-14 2024-11-12 Shin-Etsu Chemical Co., Ltd. Silylated isocyanurate compound, metal corrosion inhibitor, curable organosilicon resin composition, and semiconductor apparatus
KR102467690B1 (ko) * 2020-08-19 2022-11-17 주식회사 케이씨씨실리콘 광학용 폴리실록산 조성물 및 이를 포함하는 광학 반도체용 반사 재료
CN118995044A (zh) * 2024-08-19 2024-11-22 宁波杭州湾新材料研究院 一种富硅抗反射涂层树脂及其制备方法、富硅抗反射涂层

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014533765A (ja) * 2011-11-25 2014-12-15 エルジー・ケム・リミテッド 硬化性組成物
US10005906B2 (en) 2014-06-03 2018-06-26 Dow Corning Toray Co., Ltd. Curable silicone composition, and optical semiconductor device
WO2015186322A1 (ja) * 2014-06-03 2015-12-10 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、および光半導体装置
JPWO2015186322A1 (ja) * 2014-06-03 2017-04-20 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、および光半導体装置
WO2015194389A1 (ja) * 2014-06-18 2015-12-23 信越化学工業株式会社 基材密着性に優れるシリコーン粘着剤組成物及び粘着性物品
KR102320575B1 (ko) 2014-06-18 2021-11-02 신에쓰 가가꾸 고교 가부시끼가이샤 기재 밀착성이 우수한 실리콘 점착제 조성물 및 점착성 물품
KR20170018803A (ko) * 2014-06-18 2017-02-20 신에쓰 가가꾸 고교 가부시끼가이샤 기재 밀착성이 우수한 실리콘 점착제 조성물 및 점착성 물품
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