JP2013128267A - 圧電薄膜共振子及び圧電薄膜の製造方法 - Google Patents
圧電薄膜共振子及び圧電薄膜の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 156
- 238000009826 distribution Methods 0.000 claims abstract description 36
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
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- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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Abstract
【解決手段】厚み方向において、Sc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウムからなる圧電薄膜6と、圧電薄膜6を挟んで対向するように第1及び第2電極5,7が設けられており、圧電薄膜6と第1及び第2の電極5,7とからなる圧電振動部を支持している基板2がさらに備えられている、圧電薄膜共振子1。
【選択図】図1
Description
2…基板
3…絶縁膜
4…保護膜
5…第1の電極
6…圧電薄膜
6A…圧電薄膜
6B…圧電薄膜
6C…圧電薄膜
6D…圧電薄膜
6a…窒化アルミニウム膜
6b…Sc含有窒化アルミニウム膜
6c…窒化アルミニウム膜
6d,6f…Sc含有窒化アルミニウム膜
6e…窒化アルミニウム膜
6g…Sc含有窒化アルミニウム膜
6h…窒化アルミニウム膜
7…第2の電極
8…保護膜
9,10…電極パッド
11…フィルタ装置
12…入力端子
13…出力端子
21…スパッタリング装置
22…素子
23…第1のターゲット
24…第2のターゲット
51…圧電薄膜共振子
52…酸化ケイ素膜
61…圧電薄膜共振子
62…音響反射層
62a,62c…高い音響インピーダンス層
62b,62d…低い音響インピーダンス層
71…複合ターゲット
71A…複合ターゲット
72…ターゲット本体
72a…凹部
72b…貫通部
73…Scターゲット
74…ターゲット本体
74a…開口
74b…上面
74c…凹部
74d…下面
P1,P2…並列腕共振子
S1〜S3…直列腕共振子
Claims (12)
- 厚み方向においてSc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウムからなる圧電薄膜と、
前記圧電薄膜を挟んで対向するように設けられた第1及び第2の電極と、
前記圧電薄膜と、前記第1及び第2の電極とからなる圧電振動部を支持している基板とを備えている、圧電薄膜共振子。 - 前記Sc含有窒化アルミニウム膜が、Sc含有濃度が異なる複数の膜を積層してなる積層膜からなる、請求項1に記載の圧電薄膜共振子。
- 前記複数の膜が、Scを含有していない窒化アルミニウム膜と、Scを含有しているSc含有窒化アルミニウム膜とを有する、請求項2に記載の圧電薄膜共振子。
- 前記Sc含有窒化アルミニウム膜において、Sc濃度が厚み方向において連続的に変化している、請求項1に記載の圧電薄膜共振子。
- 前記Sc含有窒化アルミニウム膜において、前記第1及び第2の電極に接する側に比べ、前記Sc含有窒化アルミニウム膜の厚み方向中央において、Sc濃度が高くなっている、請求項1〜4のいずれか1項に記載の圧電薄膜共振子。
- 前記第1の電極が下部電極であり、第2の電極が上部電極であり、前記圧電薄膜の前記上部電極に接する表面部分がScを含有していない窒化アルミニウムからなる、請求項5に記載の圧電薄膜共振子。
- 前記Sc含有窒化アルミニウム膜において、前記第1及び第2の電極に接する側に比べ、前記圧電薄膜の厚み方向中央において、Sc濃度が低くなっている、請求項1〜4のいずれか1項に記載の圧電薄膜共振子。
- 前記複数の膜において、前記第1の電極に接する膜及び前記第2の電極に接する膜が、Sc含有窒化アルミニウム膜からなり、前記圧電薄膜の厚み方向中央にScを含有していない窒化アルミニウム膜が配置されている、請求項3に記載の圧電薄膜共振子。
- 前記Sc含有窒化アルミニウム膜のSc含有濃度が0.5〜24原子%の範囲にある、請求項1〜8のいずれか1項に記載の圧電薄膜共振子。
- Alからなる第1のターゲットと、ScNからなる第2のターゲットとを用い、厚み方向においてSc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウム膜を2元スパッタリング法により成膜する、圧電薄膜の製造方法。
- 少なくとも窒素ガスを含む雰囲気下において、表面に複数の凹部が設けられている、Alからなるターゲット本体と、該Alからなるターゲット本体の前記凹部に埋め込まれており、ScからなるScターゲット部とを有する複合ターゲットを用い、スパッタリング法により厚み方向においてSc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウム膜を成膜する、圧電薄膜の製造方法。
- 少なくとも窒素ガスを含む雰囲気下において、貫通部が設けられているAlからなるターゲット本体と、該Alからなるターゲット本体の前記貫通部に埋め込まれているScとを有する複合ターゲットを用い、スパッタリング法により厚み方向においてSc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウム膜を成膜する、圧電薄膜の製造方法。
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US13/677,347 US9246079B2 (en) | 2011-11-18 | 2012-11-15 | Piezoelectric thin-film resonator and method for producing piezoelectric thin film |
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JP2016507939A (ja) * | 2012-12-21 | 2016-03-10 | エプコス アクチエンゲゼルシャフトEpcos Ag | 窒化アルミニウム及びスカンジウムを有したmems部品、及びmems部品の製造方法 |
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