JP2016504870A - 積層された2種の異なる圧電材料を備えるbaw部品、当該baw部品用の積層体、及び当該baw部品の製造方法 - Google Patents
積層された2種の異なる圧電材料を備えるbaw部品、当該baw部品用の積層体、及び当該baw部品の製造方法 Download PDFInfo
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 16
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
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- 229910052700 potassium Inorganic materials 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
- H01H2057/006—Micromechanical piezoelectric relay
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/00—Metal working
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
下部電極を用意する工程と、
前記下部電極の上または上方に、第1圧電材料を配置する工程と、
前記第1圧電材料の上または上方に、前記第1圧電材料とは異なる第2圧電材料を配置する工程と、
前記第2圧電材料の上または上方に、上部電極を配置する工程と
を備える。
下部電極を用意する工程と、
前記下部電極の上または上方に、第1圧電材料を配置する工程と
の2つの工程を、第2BAW共振子の形成にも利用することができる。
前記上部電極を配置する前に、予め特定した領域にある第2圧電材料を除去する工程を更に備え、
前記予め特定した領域にある前記第1圧電材料の上または上方、及び前記予め特定した領域に近接する領域における第2圧電材料の上または上方に、前記上部電極を配置する。
BAWC BAW部品
BAWR1 第1BAW共振子
BAWR2 第2BAW共振子
BE 下部電極
CS 支持基板
L 積層体
PM1 第1圧電材料
PM2 第2圧電材料
RES レジスト膜
SW1 スイッチ
SW2 スイッチ
TE 上部電極
Claims (12)
- 下部電極(BE)、上部電極(TE)、及び前記下部電極(BE)と前記上部電極(TE)との間に設けられた積層体(L)を有する第1BAW共振子(BAWR1)を備え、
前記積層体(L)は、第1圧電材料(PM1)を有する第1層、及び第2圧電材料(PM2)を有する第2層を備え、
前記第1圧電材料(PM1)は、前記第2圧電材料(PM2)と異なる
ことを特徴とするBAW部品。 - 支持基板(CS)及び第2BAW共振子(BAWR2)を更に備え、
前記第1BAW共振子(BAWR1)及び前記第2BAW共振子(BAWR2)は、前記支持基板(CS)に配設される
ことを特徴とする請求項1に記載のBAW部品。 - 前記第1BAW共振子(BAWR1)の前記積層体(L)は第1の厚みを有し、
前記第2BAW共振子(BAWR2)は、前記第1の厚みとは異なる第2の厚みを有した圧電材料層を備える
ことを特徴とする請求項2に記載のBAW部品。 - 前記第1圧電材料(PM1)と前記第2圧電材料(PM2)とは、同じエッチング剤に対して異なるエッチング選択比を有することを特徴とする請求項1〜3のいずれかに記載のBAW部品。
- 前記エッチング剤は、ウエットエッチング用のエッチング剤であることを特徴とする請求項4に記載のBAW部品。
- 前記エッチング剤は、湿潤剤に混合された2.36%の水酸化テトラメチルアンモニウムを含むことを特徴とする請求項5に記載のBAW部品。
- 前記エッチング剤は、ドライエッチング用のエッチング剤であることを特徴とする請求項1〜4のいずれかに記載のBAW部品。
- 前記第1圧電材料(PM1)は、スカンジウムドープ窒化アルミニウムであり、前記第2圧電材料(PM2)は、窒化アルミニウムであることを特徴とする請求項1〜7のいずれかに記載のBAW部品。
- 前記BAW部品(BAWC)は、デュプレクサであり、
前記第1BAW共振子(BAWR1)は、前記デュプレクサにおけるTXフィルタの共振子である
ことを特徴とする請求項1〜8のいずれかに記載のBAW部品。 - BAW部品用の積層体であって、
スカンジウムドープ窒化アルミニウムを有する第1層と、
窒化アルミニウムを有する第2層と
を備えることを特徴とする積層体。 - BAW部品(BAWC)の製造方法であって、
下部電極(BE)を用意する工程と、
前記下部電極(BE)の上または上方に、第1圧電材料(PM1)を配置する工程と、
前記第1圧電材料(PM1)の上または上方に、前記第1圧電材料(PM1)とは異なる第2圧電材料(PM2)を配置する工程と、
前記第2圧電材料(PM2)の上または上方に、上部電極(TE)を配置する工程と
を備えることを特徴とする製造方法。 - 前記上部電極(TE)を配置する前に、予め特定した領域にある前記第2圧電材料(PM2)を除去する工程を更に備え、
前記予め特定した領域にある前記第1圧電材料(PM1)の上または上方、及び前記予め特定した領域に隣接する領域にある前記第2圧電材料(PM2)の上または上方に、前記上部電極(TE)を配置する
ことを特徴とする請求項11に記載の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2012/076714 WO2014094884A1 (en) | 2012-12-21 | 2012-12-21 | Baw component, lamination for a baw component, and method for manufacturing a baw component, said baw component comprising two stacked piezoelectric materials that differ |
Publications (2)
Publication Number | Publication Date |
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JP2016504870A true JP2016504870A (ja) | 2016-02-12 |
JP6212132B2 JP6212132B2 (ja) | 2017-10-11 |
Family
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JP2015548232A Active JP6212132B2 (ja) | 2012-12-21 | 2012-12-21 | 積層された2種の異なる圧電材料を備えるbaw部品、当該baw部品用の積層体、及び当該baw部品の製造方法 |
Country Status (5)
Country | Link |
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US (1) | US9831851B2 (ja) |
JP (1) | JP6212132B2 (ja) |
CN (1) | CN104854793B (ja) |
DE (1) | DE112012007237T5 (ja) |
WO (1) | WO2014094884A1 (ja) |
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WO2018135178A1 (ja) * | 2017-01-19 | 2018-07-26 | 株式会社村田製作所 | 圧電素子、及び圧電素子を用いた共振子 |
JP2020526471A (ja) * | 2017-07-07 | 2020-08-31 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | 弾性波フィルタ改善のための置換窒化アルミニウム |
US12101076B2 (en) | 2021-02-26 | 2024-09-24 | Skyworks Solutions, Inc. | Aluminum nitride dopant scheme for bulk acoustic wave filters |
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US10727809B2 (en) * | 2016-12-15 | 2020-07-28 | Qorvo Us, Inc. | Bulk acoustic wave resonator with multilayer piezoelectric structure |
DE102016125877B4 (de) | 2016-12-29 | 2018-08-23 | Snaptrack, Inc. | BAW-Resonator- und Resonator-Anordnung |
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JP2020526471A (ja) * | 2017-07-07 | 2020-08-31 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | 弾性波フィルタ改善のための置換窒化アルミニウム |
JP7038795B2 (ja) | 2017-07-07 | 2022-03-18 | スカイワークス ソリューションズ,インコーポレイテッド | 圧電材料、弾性波共振器、フィルタ、電子デバイスモジュール及び電子デバイス |
JP2022091780A (ja) * | 2017-07-07 | 2022-06-21 | スカイワークス ソリューションズ,インコーポレイテッド | 弾性波フィルタ改善のための置換窒化アルミニウム |
JP7458431B2 (ja) | 2017-07-07 | 2024-03-29 | スカイワークス ソリューションズ,インコーポレイテッド | 弾性波フィルタ改善のための置換窒化アルミニウム |
US12101076B2 (en) | 2021-02-26 | 2024-09-24 | Skyworks Solutions, Inc. | Aluminum nitride dopant scheme for bulk acoustic wave filters |
Also Published As
Publication number | Publication date |
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US20150333248A1 (en) | 2015-11-19 |
CN104854793A (zh) | 2015-08-19 |
CN104854793B (zh) | 2018-08-21 |
WO2014094884A1 (en) | 2014-06-26 |
US9831851B2 (en) | 2017-11-28 |
DE112012007237T5 (de) | 2015-10-15 |
JP6212132B2 (ja) | 2017-10-11 |
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