JP2016507939A - 窒化アルミニウム及びスカンジウムを有したmems部品、及びmems部品の製造方法 - Google Patents
窒化アルミニウム及びスカンジウムを有したmems部品、及びmems部品の製造方法 Download PDFInfo
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- JP2016507939A JP2016507939A JP2015548233A JP2015548233A JP2016507939A JP 2016507939 A JP2016507939 A JP 2016507939A JP 2015548233 A JP2015548233 A JP 2015548233A JP 2015548233 A JP2015548233 A JP 2015548233A JP 2016507939 A JP2016507939 A JP 2016507939A
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- piezoelectric layer
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- mems component
- lower electrode
- aluminum nitride
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 41
- 229910052706 scandium Inorganic materials 0.000 title claims abstract description 8
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 81
- 238000010586 diagram Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical group [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/589—Acoustic mirrors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Abstract
Description
支持基板を用意する工程と、
前記支持基板の上または上方に、下部電極を積層する工程と、
前記下部電極の上または上方に、Sc(スカンジウム)ドープAlN(窒化アルミニウム)を有した第1圧電層を積層する工程と、
前記第1圧電層を加工処理する工程と、
前記第1圧電層の上または上方に、上部電極を積層する工程と
を備える。
AM 音響ミラー
APL 付加的圧電層
BAWC BAW部品
BAWR1 第1BAW共振子
BAWR2 第2BAW共振子
CS 支持基板
LE 下部電極
LS1 第1積層体
LS2 第2積層体
MC MEMS部品
PL1 第1圧電層
PL2 第2圧電層
RES レジスト層
SW1 スイッチ
SW2 スイッチ
UE 上部電極
Claims (10)
- 下部電極(LE)と、
前記下部電極(LE)の上方に設けられた上部電極(UE)と、
前記下部電極(LE)と前記上部電極(UE)との間に設けられた第1圧電層(PL1)とを備え、
前記第1圧電層(PL1)は、窒化アルミニウムとスカンジウムとからなる第1圧電材料を有する
ことを特徴とするMEMS部品。 - 前記MEMS部品は、BAW共振子であって、
前記第1圧電材料は、スカンジウムドープ窒化アルミニウムである
ことを特徴とする請求項1に記載のMEMS部品。 - 前記下部電極(LE)と、前記第1圧電層(PL1)と、前記上部電極(UE)とが第1BAW共振子(BAWR1)を形成し、
第2BAW共振子(BAWR2)を更に備え、
前記第2BAW共振子(BAWR2)は、
下部電極(LE)及び上部電極(UE)を備えると共に、前記第2BAW共振子(BAWR2)の下部電極(LE)と前記第2BAW共振子(BAWR2)の上部電極(UE)との間に設けられた第2圧電層(PL2)に第2圧電材料を有し、
前記第2圧電材料は、窒化アルミニウムまたはそれ以外の圧電材料からなる
ことを特徴とする請求項2に記載のMEMS部品。 - 前記第2圧電材料は、リン酸溶液に対し、スカンジウムドープ窒化アルミニウムとは異なるエッチング速度を有することを特徴とする請求項3に記載のMEMS部品。
- 前記第2圧電材料は、スカンジウムドープ窒化アルミニウムであることを特徴とする請求項3に記載のMEMS部品。
- 前記第1圧電層(PL1)の厚みは、前記第2圧電層(PL2)の厚みより薄いことを特徴とする請求項3または4に記載のMEMS部品。
- MEMS部品(MC)の製造方法であって、
支持基板(CS)を用意する工程と、
前記支持基板(CS)の上または上方に、下部電極(LE)を積層する工程と、
前記下部電極(LE)の上または上方に、スカンジウムドープ窒化アルミニウムを有した第1圧電層(PL1)を積層する工程と、
前記第1圧電層(PL1)を加工処理する工程と、
前記第1圧電層(PL1)の上または上方に、上部電極(UE)を積層する工程とを備え、
前記下部電極(LE)と、前記第1圧電層(PL1)と、前記上部電極(UE)とにより、第1積層体(LS1)を形成する
ことを特徴とする製造方法。 - 第2圧電層(PL2)を有した第2積層体(LS2)が、前記第1積層体(LS1)に隣接して配置され、
前記第1圧電層(PL1)を加工処理する際には、前記第2圧電層(PL2)の加工処理を行わないことを特徴とする請求項7に記載の製造方法。 - 前記第2圧電層(PL2)は、窒化アルミニウムからなることを特徴とする請求項8に記載の製造方法。
- 前記第1圧電層(PL1)の加工処理に、リン酸溶液を用いることを特徴とする請求項7〜9のいずれかに記載の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2012/076723 WO2014094887A1 (en) | 2012-12-21 | 2012-12-21 | Mems component comprising aln and sc and method for manufacturing a mems component |
Publications (2)
Publication Number | Publication Date |
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JP2016507939A true JP2016507939A (ja) | 2016-03-10 |
JP6105084B2 JP6105084B2 (ja) | 2017-03-29 |
Family
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JP2015548233A Active JP6105084B2 (ja) | 2012-12-21 | 2012-12-21 | 窒化アルミニウム及びスカンジウムを有したmems部品の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10097152B2 (ja) |
EP (1) | EP2936680B1 (ja) |
JP (1) | JP6105084B2 (ja) |
WO (1) | WO2014094887A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022212317A1 (en) * | 2021-04-01 | 2022-10-06 | Applied Materials, Inc. | Method of manufacturing aluminum nitride films |
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DE102014112372B3 (de) * | 2014-08-28 | 2016-02-25 | Epcos Ag | Filterchip und Verfahren zur Herstellung eines Filterchips |
US20170263847A1 (en) * | 2016-03-09 | 2017-09-14 | Teledyne Dalsa Semiconductor, Inc. | Piezoelectric Alloy Films |
US10038422B2 (en) * | 2016-08-25 | 2018-07-31 | Qualcomm Incorporated | Single-chip multi-frequency film bulk acoustic-wave resonators |
KR102313290B1 (ko) * | 2017-03-08 | 2021-10-18 | 삼성전기주식회사 | 박막 벌크 음향 공진기 및 그의 제조 방법 |
CN111262548B (zh) * | 2019-12-31 | 2021-06-22 | 诺思(天津)微系统有限责任公司 | 体声波谐振器组、滤波器、电子设备、机电耦合系数调整方法 |
CN111092606A (zh) * | 2019-12-31 | 2020-05-01 | 诺思(天津)微系统有限责任公司 | 温补层结构、体声波谐振器及制造方法,滤波器、电子设备 |
IT202000010264A1 (it) * | 2020-05-07 | 2021-11-07 | St Microelectronics Srl | Attuatore piezoelettrico avente un sensore di deformazione e relativo procedimento di fabbricazione |
IT202000010261A1 (it) | 2020-05-07 | 2021-11-07 | St Microelectronics Srl | Attuatore piezoelettrico dotato di una struttura deformabile avente migliorate proprieta' meccaniche e relativo procedimento di fabbricazione |
US20220069797A1 (en) * | 2020-08-31 | 2022-03-03 | Qualcomm Incorporated | Substrate comprising acoustic resonators configured as at least one acoustic filter |
CN117981060A (zh) * | 2021-09-02 | 2024-05-03 | 应用材料公司 | 钪掺杂的氮化铝的选择性蚀刻 |
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- 2012-12-21 US US14/653,829 patent/US10097152B2/en active Active
- 2012-12-21 EP EP12818510.5A patent/EP2936680B1/en active Active
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US20150333727A1 (en) | 2015-11-19 |
EP2936680B1 (en) | 2020-11-04 |
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