JP2013125884A - 光電変換装置の作製方法および光電変換装置 - Google Patents

光電変換装置の作製方法および光電変換装置 Download PDF

Info

Publication number
JP2013125884A
JP2013125884A JP2011274196A JP2011274196A JP2013125884A JP 2013125884 A JP2013125884 A JP 2013125884A JP 2011274196 A JP2011274196 A JP 2011274196A JP 2011274196 A JP2011274196 A JP 2011274196A JP 2013125884 A JP2013125884 A JP 2013125884A
Authority
JP
Japan
Prior art keywords
semiconductor layer
oxide
silicon substrate
photoelectric conversion
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011274196A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013125884A5 (enExample
Inventor
Mitsuhiro Ichijo
充弘 一條
Toshiya Endo
俊弥 遠藤
Mai Sugikawa
舞 杉川
Sho Kato
翔 加藤
Hideki Tsuya
英樹 津屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011274196A priority Critical patent/JP2013125884A/ja
Publication of JP2013125884A publication Critical patent/JP2013125884A/ja
Publication of JP2013125884A5 publication Critical patent/JP2013125884A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP2011274196A 2011-12-15 2011-12-15 光電変換装置の作製方法および光電変換装置 Withdrawn JP2013125884A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011274196A JP2013125884A (ja) 2011-12-15 2011-12-15 光電変換装置の作製方法および光電変換装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011274196A JP2013125884A (ja) 2011-12-15 2011-12-15 光電変換装置の作製方法および光電変換装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016057800A Division JP6139731B2 (ja) 2016-03-23 2016-03-23 光電変換装置の作製方法

Publications (2)

Publication Number Publication Date
JP2013125884A true JP2013125884A (ja) 2013-06-24
JP2013125884A5 JP2013125884A5 (enExample) 2015-01-22

Family

ID=48776958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011274196A Withdrawn JP2013125884A (ja) 2011-12-15 2011-12-15 光電変換装置の作製方法および光電変換装置

Country Status (1)

Country Link
JP (1) JP2013125884A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016084299A1 (ja) * 2014-11-28 2016-06-02 パナソニックＩｐマネジメント株式会社 太陽電池セル及び太陽電池モジュール
JP2016106440A (ja) * 2016-03-23 2016-06-16 株式会社半導体エネルギー研究所 光電変換装置の作製方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645083A (en) * 1979-07-16 1981-04-24 Rca Corp Improving amorphous silicon film conductivity
JPS61255016A (ja) * 1985-05-07 1986-11-12 Semiconductor Energy Lab Co Ltd 半導体装置作成方法
JPH02263429A (ja) * 1989-04-03 1990-10-26 Sumitomo Metal Ind Ltd 薄膜の形成方法
JPH04253376A (ja) * 1991-01-29 1992-09-09 Sharp Corp 非晶質半導体素子
JP2007294830A (ja) * 2005-06-16 2007-11-08 Sanyo Electric Co Ltd 太陽電池モジュールの製造方法
US20090293948A1 (en) * 2008-05-28 2009-12-03 Stichting Energieonderzoek Centrum Nederland Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell
JP2010239139A (ja) * 2004-09-29 2010-10-21 Sanyo Electric Co Ltd 光起電力装置
JP2011077454A (ja) * 2009-10-01 2011-04-14 Kaneka Corp 結晶シリコン系太陽電池とその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645083A (en) * 1979-07-16 1981-04-24 Rca Corp Improving amorphous silicon film conductivity
JPS61255016A (ja) * 1985-05-07 1986-11-12 Semiconductor Energy Lab Co Ltd 半導体装置作成方法
JPH02263429A (ja) * 1989-04-03 1990-10-26 Sumitomo Metal Ind Ltd 薄膜の形成方法
JPH04253376A (ja) * 1991-01-29 1992-09-09 Sharp Corp 非晶質半導体素子
JP2010239139A (ja) * 2004-09-29 2010-10-21 Sanyo Electric Co Ltd 光起電力装置
JP2007294830A (ja) * 2005-06-16 2007-11-08 Sanyo Electric Co Ltd 太陽電池モジュールの製造方法
US20090293948A1 (en) * 2008-05-28 2009-12-03 Stichting Energieonderzoek Centrum Nederland Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell
JP2011077454A (ja) * 2009-10-01 2011-04-14 Kaneka Corp 結晶シリコン系太陽電池とその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016084299A1 (ja) * 2014-11-28 2016-06-02 パナソニックＩｐマネジメント株式会社 太陽電池セル及び太陽電池モジュール
CN107004732A (zh) * 2014-11-28 2017-08-01 松下知识产权经营株式会社 太阳能单电池和太阳能电池组件
JPWO2016084299A1 (ja) * 2014-11-28 2017-08-24 パナソニックＩｐマネジメント株式会社 太陽電池セル及び太陽電池モジュール
JP2018201052A (ja) * 2014-11-28 2018-12-20 パナソニックＩｐマネジメント株式会社 太陽電池モジュール
CN107004732B (zh) * 2014-11-28 2020-10-20 松下知识产权经营株式会社 太阳能单电池和太阳能电池组件
JP2016106440A (ja) * 2016-03-23 2016-06-16 株式会社半導体エネルギー研究所 光電変換装置の作製方法

Similar Documents

Publication Publication Date Title
JP5456168B2 (ja) 光電変換装置の製造方法
JP5421701B2 (ja) 結晶シリコン太陽電池及びその製造方法
US9112086B2 (en) Photoelectric conversion device
US20120273036A1 (en) Photoelectric conversion device and manufacturing method thereof
JP5927027B2 (ja) 光電変換装置
JP2009033208A (ja) 積層型光起電力素子の製造方法
JP5948148B2 (ja) 光電変換装置
JP5826094B2 (ja) ｐ型半導体材料、および光電変換装置の作製方法
JP2017005270A (ja) 光電変換装置の作製方法
US9437768B2 (en) Photoelectric conversion device
JP6254348B2 (ja) 光電変換装置
JP6139731B2 (ja) 光電変換装置の作製方法
JP2013125884A (ja) 光電変換装置の作製方法および光電変換装置
JP6990764B2 (ja) 太陽電池およびその製造方法
JP2004119491A (ja) 薄膜太陽電池の製造方法およびその方法で製造された薄膜太陽電池
JP5927028B2 (ja) 光電変換装置
TWI790245B (zh) 光電轉換裝置之製造方法
JP2007287926A (ja) 集積化薄膜光電変換装置の製造方法および、その製造方法で得られうる集積化薄膜光電変換装置。
JP2013074038A (ja) 光電変換装置の製造方法及び光電変換装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141127

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150820

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150825

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150923

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160223

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20160325