JP2013125884A5 - - Google Patents
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- Publication number
- JP2013125884A5 JP2013125884A5 JP2011274196A JP2011274196A JP2013125884A5 JP 2013125884 A5 JP2013125884 A5 JP 2013125884A5 JP 2011274196 A JP2011274196 A JP 2011274196A JP 2011274196 A JP2011274196 A JP 2011274196A JP 2013125884 A5 JP2013125884 A5 JP 2013125884A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type
- silicon substrate
- type conductivity
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 10
- 229910052710 silicon Inorganic materials 0.000 claims 10
- 239000010703 silicon Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- 229910052786 argon Inorganic materials 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011274196A JP2013125884A (ja) | 2011-12-15 | 2011-12-15 | 光電変換装置の作製方法および光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011274196A JP2013125884A (ja) | 2011-12-15 | 2011-12-15 | 光電変換装置の作製方法および光電変換装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016057800A Division JP6139731B2 (ja) | 2016-03-23 | 2016-03-23 | 光電変換装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013125884A JP2013125884A (ja) | 2013-06-24 |
| JP2013125884A5 true JP2013125884A5 (enExample) | 2015-01-22 |
Family
ID=48776958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011274196A Withdrawn JP2013125884A (ja) | 2011-12-15 | 2011-12-15 | 光電変換装置の作製方法および光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013125884A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016084299A1 (ja) * | 2014-11-28 | 2016-06-02 | パナソニックIpマネジメント株式会社 | 太陽電池セル及び太陽電池モジュール |
| JP6139731B2 (ja) * | 2016-03-23 | 2017-05-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226643A (en) * | 1979-07-16 | 1980-10-07 | Rca Corporation | Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film |
| JP2590305B2 (ja) * | 1985-05-07 | 1997-03-12 | 株式会社 半導体エネルギー研究所 | 半導体装置作成方法 |
| JPH02263429A (ja) * | 1989-04-03 | 1990-10-26 | Sumitomo Metal Ind Ltd | 薄膜の形成方法 |
| JPH04253376A (ja) * | 1991-01-29 | 1992-09-09 | Sharp Corp | 非晶質半導体素子 |
| EP1643564B1 (en) * | 2004-09-29 | 2019-01-16 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaic device |
| JP2007294830A (ja) * | 2005-06-16 | 2007-11-08 | Sanyo Electric Co Ltd | 太陽電池モジュールの製造方法 |
| US20090293948A1 (en) * | 2008-05-28 | 2009-12-03 | Stichting Energieonderzoek Centrum Nederland | Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell |
| JP2011077454A (ja) * | 2009-10-01 | 2011-04-14 | Kaneka Corp | 結晶シリコン系太陽電池とその製造方法 |
-
2011
- 2011-12-15 JP JP2011274196A patent/JP2013125884A/ja not_active Withdrawn
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