JP2013115128A - 薄膜太陽電池モジュール及びその製造方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 69
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 69
- 239000010408 film Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000005275 alloying Methods 0.000 claims abstract description 16
- 230000031700 light absorption Effects 0.000 claims description 83
- 239000011734 sodium Substances 0.000 claims description 66
- 239000011669 selenium Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 13
- 229910052711 selenium Inorganic materials 0.000 claims description 13
- 229910052717 sulfur Inorganic materials 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 12
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 10
- 239000011593 sulfur Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052798 chalcogen Inorganic materials 0.000 claims description 3
- 150000001787 chalcogens Chemical class 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- -1 sodium (Na) (see Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H01L31/02—Details
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Abstract
【解決手段】基板11上に裏面電極層12を成膜する裏面電極層成膜工程と、裏面電極層12にアルカリ金属を添加するアルカリ金属添加工程と、裏面電極層12上に光吸収層13を成膜する光吸収層成膜工程と、光吸収層13を分割する分割溝13xを形成し、分割溝13x内に裏面電極層12の表面を露出させる分割溝形成工程と、分割溝13x内に露出した裏面電極層12の表面において、裏面電極層12と前記アルカリ金属とを合金化する合金化工程と、光吸収層13上及び分割溝13x内に透明導電膜を成膜する透明導電膜成膜工程と、を有する。
【選択図】図7
Description
まず、本実施の形態に係るCIS系薄膜太陽電池モジュールの構造について説明する。図1は、本実施の形態に係るCIS系薄膜太陽電池モジュールを例示する平面図である。図2は、図1のA−A線に沿う部分断面図である。図3は、図1のB−B線に沿う断面図である。
次に、本実施の形態に係るCIS系薄膜太陽電池モジュールの製造方法について説明する。図4〜図9は、本実施の形態に係るCIS系薄膜太陽電池モジュールの製造工程を例示する図である。なお、図4〜図9は、図2のA−A断面に対応する部分断面図である。
実施例として、分割溝13xを形成する条件を変えた場合の、それぞれのCIS系薄膜太陽電池モジュールの性能を比較した。
11 基板
11a 第1のエッジスペース
11b 第2のエッジスペース
12 裏面電極層
12x、13x、14x 分割溝
13 光吸収層
14 透明導電膜
19 セル
Claims (16)
- 基板上に裏面電極層を成膜する裏面電極層成膜工程と、
前記裏面電極層にアルカリ金属を添加するアルカリ金属添加工程と、
前記裏面電極層上に光吸収層を成膜する光吸収層成膜工程と、
前記光吸収層を分割する分割溝を形成し、前記分割溝内に前記裏面電極層の表面を露出させる分割溝形成工程と、
前記分割溝内に露出した前記裏面電極層の表面において、前記裏面電極層と前記アルカリ金属とを合金化する合金化工程と、
前記光吸収層上及び前記分割溝内に透明導電膜を成膜する透明導電膜成膜工程と、を有する薄膜太陽電池モジュールの製造方法。 - 前記アルカリ金属添加工程では、前記アルカリ金属としてナトリウム(Na)を添加する請求項1記載の薄膜太陽電池モジュールの製造方法。
- 前記分割溝形成工程と前記合金化工程とは同一工程であり、
前記光吸収層にレーザ光を照射して前記分割溝を形成するとともに、前記レーザ光により前記裏面電極層と前記アルカリ金属とを合金化する請求項1又は2記載の薄膜太陽電池モジュールの製造方法。 - 前記レーザ光の波長は1064nmであり、かつ、前記レーザ光のパルス幅は12nsec以上である請求項3記載の薄膜太陽電池モジュールの製造方法。
- 前記基板は前記アルカリ金属を含むガラス基板であり、
前記アルカリ金属添加工程では、前記ガラス基板中の前記アルカリ金属を前記裏面電極層に拡散する請求項1乃至4の何れか一項記載の薄膜太陽電池モジュールの製造方法。 - 前記光吸収層成膜工程では、前記アルカリ金属が添加された光吸収層を成膜し、
前記アルカリ金属添加工程では、前記光吸収層に添加された前記アルカリ金属を前記裏面電極層に拡散する請求項1乃至4の何れか一項記載の薄膜太陽電池モジュールの製造方法。 - 前記アルカリ金属添加工程では、前記裏面電極層に直接前記アルカリ金属を添加する請求項1乃至4の何れか一項記載の薄膜太陽電池モジュールの製造方法。
- 前記裏面電極層を分割する第2の分割溝を形成し、前記第2の分割溝内に前記基板の表面を露出させる工程と、
前記光吸収層及び前記透明導電膜を分割する第3の分割溝を形成し、前記第3の分割溝内に前記裏面電極層の表面を露出させ、前記分割溝、前記第2の分割溝、及び前記第3の分割溝で分割された複数のセルが直列接続された構造を形成する工程と、を更に有する請求項1乃至7の何れか一項記載の薄膜太陽電池モジュールの製造方法。 - 前記裏面電極層は、モリブデン(Mo)を含有する請求項1乃至8の何れか一項記載の薄膜太陽電池モジュールの製造方法。
- 前記光吸収層は、少なくとも銅(Cu)、インジウム(In)、及びセレン(Se)を含有する請求項1乃至9の何れか一項記載の薄膜太陽電池モジュールの製造方法。
- 前記光吸収層は、少なくとも銅(Cu)、亜鉛(Zn)、錫(Sn)、及びカルコゲン元素(セレン(Se)又は硫黄(S))を含有する請求項1乃至9の何れか一項記載の薄膜太陽電池モジュールの製造方法。
- 基板と、
前記基板上に成膜された裏面電極層と、
前記裏面電極層上に成膜された光吸収層と、
前記光吸収層を分割し、前記裏面電極層の表面を露出させる分割溝と、
前記光吸収層上及び前記分割溝内に成膜された透明導電膜と、を有し、
前記裏面電極層にはアルカリ金属が添加されており、
前記分割溝内に露出した前記裏面電極層の表面において、前記裏面電極層と前記アルカリ金属との合金が形成されている薄膜太陽電池モジュール。 - 前記アルカリ金属はナトリウム(Na)である請求項12記載の薄膜太陽電池モジュール。
- 前記裏面電極層は、モリブデン(Mo)を含有する請求項12又は13記載の薄膜太陽電池モジュール。
- 前記光吸収層は、少なくとも銅(Cu)、インジウム(In)、及びセレン(Se)を含有する請求項12乃至14の何れか一項記載の薄膜太陽電池モジュール。
- 前記光吸収層は、少なくとも銅(Cu)、亜鉛(Zn)、錫(Sn)、及びカルコゲン元素(セレン(Se)又は硫黄(S))を含有する請求項12乃至14の何れか一項記載の薄膜太陽電池モジュール。
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US14/359,616 US9634157B2 (en) | 2011-11-25 | 2012-11-22 | Thin-film solar cell module and method for manufacturing the same |
CN201280057822.2A CN103946989B (zh) | 2011-11-25 | 2012-11-22 | 薄膜太阳电池模组及其制造方法 |
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KR20200115740A (ko) * | 2019-03-25 | 2020-10-08 | 재단법인대구경북과학기술원 | 박막태양전지의 제조방법 및 그 제조방법에 의해 제조된 박막태양전지 |
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JP2014037556A (ja) * | 2012-08-10 | 2014-02-27 | Mitsubishi Materials Corp | スパッタリングターゲット及びその製造方法 |
JP6311912B2 (ja) | 2012-10-17 | 2018-04-18 | 三菱マテリアル株式会社 | Cu−Ga二元系スパッタリングターゲット及びその製造方法 |
JP6365922B2 (ja) | 2013-04-15 | 2018-08-01 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
KR20150057807A (ko) * | 2013-11-20 | 2015-05-28 | 삼성에스디아이 주식회사 | 태양 전지 및 그 제조 방법 |
EP2887405A1 (de) * | 2013-12-23 | 2015-06-24 | Saint-Gobain Glass France | Schichtsystem für Dünnschichtsolarzellen |
CN108807600A (zh) * | 2018-07-10 | 2018-11-13 | 成都先锋材料有限公司 | 太阳能电池制作方法 |
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US20140332070A1 (en) | 2014-11-13 |
CN103946989A (zh) | 2014-07-23 |
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