JP2013110680A - スイッチング回路及び包絡線信号増幅器 - Google Patents
スイッチング回路及び包絡線信号増幅器 Download PDFInfo
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- JP2013110680A JP2013110680A JP2011256130A JP2011256130A JP2013110680A JP 2013110680 A JP2013110680 A JP 2013110680A JP 2011256130 A JP2011256130 A JP 2011256130A JP 2011256130 A JP2011256130 A JP 2011256130A JP 2013110680 A JP2013110680 A JP 2013110680A
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- signal
- switching
- switching circuit
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- modulation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/54—Amplifiers using transit-time effect in tubes or semiconductor devices
- H03F3/55—Amplifiers using transit-time effect in tubes or semiconductor devices with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/351—Pulse width modulation being used in an amplifying circuit
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
【解決手段】本発明の一実施形態のスイッチング回路33は、N個(Nは2以上の整数)のトランジスタM1〜Mnのスイッチングを制御するための各制御端子をN−1個のコイルL1を介して縦続接続する接続回路と、一端が直流電源に電気的に接続されるコイルL2の他端及びトランジスタM1〜Mnの各一端の間に各別に接続されたコイルL3とを備え、接続回路の入力端子に入力されるPWM信号にて、スイッチング素子M1〜Mnを順次スイッチングさせるようにしてある。また、スイッチング回路33は、コイルL2の一端側又は他端側に縦続接続されるように挿入されたトランジスタM0を更に備える。
【選択図】図3
Description
(実施の形態1)
(実施の形態2)
(実施の形態3)
3 包絡線信号増幅器
33、33a、33b スイッチング回路
333 駆動回路
L1 コイル(第1インダクタンス素子)
L2 コイル(第2インダクタンス素子)
L3 コイル(第3インダクタンス素子)
Rs 終端抵抗
M1、M2、・・Mn 電界効果トランジスタ(MOSFET)
D1、D2、・・Dn ドレイン(スイッチング素子の一端)
G1、G2、・・Gn ゲート(スイッチング素子の制御端子)
M0 電界効果トランジスタ(MOSFET)(補助スイッチング素子)
D ダイオード
Vdd 電源(直流電源)
Claims (9)
- N個(Nは2以上の整数)のスイッチング素子のスイッチングを制御するための各制御端子をN−1個の第1インダクタンス素子を介して縦続接続する接続回路と、一端が直流電源に電気的に接続される第2インダクタンス素子の他端及び前記スイッチング素子の各一端の間に各別に接続された第3インダクタンス素子とを備えるスイッチング回路であって、
前記接続回路の入力端子に入力されるPWM信号にて、前記N個のスイッチング素子を順次スイッチングさせるようにしてあり、
前記第2インダクタンス素子の一端側又は他端側に縦続接続されるように挿入された補助スイッチング素子を更に備える、
ことを特徴とするスイッチング回路。 - 前記補助スイッチング素子は、前記第2インダクタンス素子が磁気飽和する時定数の逆数よりも高い周波数で駆動されることを特徴とする請求項1に記載のスイッチング回路。
- 前記補助スイッチング素子を駆動するための駆動信号であって、前記PWM信号からその周波数を低下させることによって当該駆動信号を生成する駆動回路を更に備えることを特徴とする請求項2に記載のスイッチング回路。
- 前記N個のスイッチング素子それぞれは、第1導電型のトランジスタであり、
前記補助スイッチング素子は、前記第1導電型とは異なる第2導電型のトランジスタである、
ことを特徴とする請求項1〜3の何れか1項に記載のスイッチング回路。 - 前記スイッチング素子の一端及び前記第2インダクタンス素子の他端の間を電気的に接続する接続部材を、前記第3インダクタンス素子に置き換えることを特徴とする請求項1〜4の何れか1項に記載のスイッチング回路。
- Nは8以上であることを特徴とする請求項1〜5の何れか1項に記載のスイッチング回路。
- 前記スイッチング素子と、前記第1、第2及び第3インダクタンス素子とが、モノリシック集積回路の半導体基板に形成されていることを特徴とする請求項1〜6の何れか1項に記載のスイッチング回路。
- 前記スイッチング素子は、縦型のMOSFETであることを特徴とする請求項1〜7の何れか1項に記載のスイッチング回路。
- アナログの信号をパルス幅変調する変調回路と、
請求項1〜8の何れか1項に記載のスイッチング回路とを備え、
前記変調回路が変調信号の包絡線信号をパルス幅変調して得られたPWM信号にて前記スイッチング回路をスイッチングさせるようにしてあること
を特徴とする包絡線信号増幅器。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011256130A JP5706298B2 (ja) | 2011-11-24 | 2011-11-24 | スイッチング回路及び包絡線信号増幅器 |
CN201280052674.5A CN103891136B (zh) | 2011-11-24 | 2012-10-11 | 开关电路以及包络信号放大器 |
EP20120851806 EP2784933A4 (en) | 2011-11-24 | 2012-10-11 | CIRCUIT AND HOSE SIGNAL AMPLIFIERS |
PCT/JP2012/076347 WO2013077104A1 (ja) | 2011-11-24 | 2012-10-11 | スイッチング回路及び包絡線信号増幅器 |
US13/662,083 US8917142B2 (en) | 2011-11-24 | 2012-10-26 | Switching circuit and envelope signal amplifier |
TW101140408A TW201325071A (zh) | 2011-11-24 | 2012-10-31 | 開關電路及包絡線信號放大器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011256130A JP5706298B2 (ja) | 2011-11-24 | 2011-11-24 | スイッチング回路及び包絡線信号増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013110680A true JP2013110680A (ja) | 2013-06-06 |
JP5706298B2 JP5706298B2 (ja) | 2015-04-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011256130A Expired - Fee Related JP5706298B2 (ja) | 2011-11-24 | 2011-11-24 | スイッチング回路及び包絡線信号増幅器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8917142B2 (ja) |
EP (1) | EP2784933A4 (ja) |
JP (1) | JP5706298B2 (ja) |
CN (1) | CN103891136B (ja) |
TW (1) | TW201325071A (ja) |
WO (1) | WO2013077104A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9973148B2 (en) * | 2016-08-08 | 2018-05-15 | Skyworks Solutions, Inc. | Radio frequency system with switch to receive envelope |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08340240A (ja) * | 1995-06-13 | 1996-12-24 | Nippon Telegr & Teleph Corp <Ntt> | 分布増幅型リタイミング再生回路 |
JP2005168106A (ja) * | 2003-11-28 | 2005-06-23 | Toshiba Corp | 電源装置 |
JP2011135357A (ja) * | 2009-12-24 | 2011-07-07 | Toyohashi Univ Of Technology | スイッチング回路、分布定数型のスイッチング回路、及び包絡線信号増幅器 |
WO2011148710A1 (ja) * | 2010-05-25 | 2011-12-01 | 住友電気工業株式会社 | スイッチング回路及び包絡線信号増幅器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03117013A (ja) * | 1989-09-29 | 1991-05-17 | Anritsu Corp | 分布型増幅器 |
JPH06273191A (ja) * | 1993-03-18 | 1994-09-30 | Mitsutoyo Corp | 変位検出装置 |
JP2002033627A (ja) | 2000-07-19 | 2002-01-31 | Fujitsu Ltd | 分布増幅器 |
US6342815B1 (en) * | 2000-10-04 | 2002-01-29 | Trw Inc. | Manufacturable HBT power distributed amplifier for wideband telecommunications |
US6737973B2 (en) * | 2001-10-15 | 2004-05-18 | 3M Innovative Properties Company | Amplifier modulation |
GB0522477D0 (en) * | 2005-11-03 | 2005-12-14 | Analog Devices Inc | Modulator |
JP2008124715A (ja) * | 2006-11-10 | 2008-05-29 | Nec Corp | 高周波電力増幅器 |
US7923974B2 (en) * | 2008-01-04 | 2011-04-12 | Chil Semiconductor Corporation | Modification of switch activation order in a power supply |
-
2011
- 2011-11-24 JP JP2011256130A patent/JP5706298B2/ja not_active Expired - Fee Related
-
2012
- 2012-10-11 EP EP20120851806 patent/EP2784933A4/en not_active Withdrawn
- 2012-10-11 WO PCT/JP2012/076347 patent/WO2013077104A1/ja active Application Filing
- 2012-10-11 CN CN201280052674.5A patent/CN103891136B/zh not_active Expired - Fee Related
- 2012-10-26 US US13/662,083 patent/US8917142B2/en not_active Expired - Fee Related
- 2012-10-31 TW TW101140408A patent/TW201325071A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08340240A (ja) * | 1995-06-13 | 1996-12-24 | Nippon Telegr & Teleph Corp <Ntt> | 分布増幅型リタイミング再生回路 |
JP2005168106A (ja) * | 2003-11-28 | 2005-06-23 | Toshiba Corp | 電源装置 |
JP2011135357A (ja) * | 2009-12-24 | 2011-07-07 | Toyohashi Univ Of Technology | スイッチング回路、分布定数型のスイッチング回路、及び包絡線信号増幅器 |
WO2011148710A1 (ja) * | 2010-05-25 | 2011-12-01 | 住友電気工業株式会社 | スイッチング回路及び包絡線信号増幅器 |
JP2011250011A (ja) * | 2010-05-25 | 2011-12-08 | Toyohashi Univ Of Technology | スイッチング回路及び包絡線信号増幅器 |
Also Published As
Publication number | Publication date |
---|---|
CN103891136B (zh) | 2016-09-07 |
US20130135046A1 (en) | 2013-05-30 |
TW201325071A (zh) | 2013-06-16 |
EP2784933A1 (en) | 2014-10-01 |
WO2013077104A1 (ja) | 2013-05-30 |
JP5706298B2 (ja) | 2015-04-22 |
US8917142B2 (en) | 2014-12-23 |
CN103891136A (zh) | 2014-06-25 |
EP2784933A4 (en) | 2015-04-29 |
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