JP2013093574A5 - - Google Patents
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- Publication number
- JP2013093574A5 JP2013093574A5 JP2012228503A JP2012228503A JP2013093574A5 JP 2013093574 A5 JP2013093574 A5 JP 2013093574A5 JP 2012228503 A JP2012228503 A JP 2012228503A JP 2012228503 A JP2012228503 A JP 2012228503A JP 2013093574 A5 JP2013093574 A5 JP 2013093574A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polarity
- conductivity
- tvs
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000002019 doping agent Substances 0.000 claims 3
- 239000008393 encapsulating agent Substances 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- 238000005275 alloying Methods 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 230000001052 transient effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/281,638 | 2011-10-26 | ||
| US13/281,638 US8530902B2 (en) | 2011-10-26 | 2011-10-26 | System for transient voltage suppressors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013093574A JP2013093574A (ja) | 2013-05-16 |
| JP2013093574A5 true JP2013093574A5 (enExample) | 2015-11-26 |
Family
ID=47471463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012228503A Pending JP2013093574A (ja) | 2011-10-26 | 2012-10-16 | 過渡電圧抑制器のための方法およびシステム |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8530902B2 (enExample) |
| EP (1) | EP2587543A3 (enExample) |
| JP (1) | JP2013093574A (enExample) |
| CN (1) | CN103077938B (enExample) |
| BR (1) | BR102012025930A2 (enExample) |
| CA (1) | CA2792591A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8835976B2 (en) * | 2012-03-14 | 2014-09-16 | General Electric Company | Method and system for ultra miniaturized packages for transient voltage suppressors |
| US9042072B2 (en) * | 2012-03-30 | 2015-05-26 | General Electric Company | Method and system for lightning protection with distributed transient voltage suppression |
| US8987858B2 (en) * | 2013-03-18 | 2015-03-24 | General Electric Company | Method and system for transient voltage suppression |
| US9111750B2 (en) * | 2013-06-28 | 2015-08-18 | General Electric Company | Over-voltage protection of gallium nitride semiconductor devices |
| US9997507B2 (en) | 2013-07-25 | 2018-06-12 | General Electric Company | Semiconductor assembly and method of manufacture |
| US9508841B2 (en) | 2013-08-01 | 2016-11-29 | General Electric Company | Method and system for a semiconductor device with integrated transient voltage suppression |
| US10103540B2 (en) * | 2014-04-24 | 2018-10-16 | General Electric Company | Method and system for transient voltage suppression devices with active control |
| CN105321876A (zh) * | 2014-07-28 | 2016-02-10 | 哈尔滨工大华生电子有限公司 | 一种集成esd防护功能的高频共模lc滤波设计方法 |
| US9806157B2 (en) * | 2014-10-03 | 2017-10-31 | General Electric Company | Structure and method for transient voltage suppression devices with a two-region base |
| WO2016159962A1 (en) * | 2015-03-31 | 2016-10-06 | Vishay General Semiconductor Llc | Thin bi-directional transient voltage suppressor (tvs) or zener diode |
| CN109616407A (zh) * | 2018-12-12 | 2019-04-12 | 中国人民解放军军事科学院国防工程研究院 | 高功率电磁脉冲防护的SiC-TVS器件的制备方法 |
| US11482851B2 (en) * | 2020-10-14 | 2022-10-25 | Eaton Intelligent Power Limited | Arc flash mitigation device |
| CN115632070B (zh) * | 2022-10-14 | 2025-12-05 | 西安电子科技大学芜湖研究院 | 一种钳位电压可选的多台阶肖特基接触SiC-TVS器件及制备方法 |
| CN115632071B (zh) * | 2022-10-27 | 2025-12-05 | 西安电子科技大学芜湖研究院 | 一种多台阶的钳位电压可选的SiC-TVS器件及制备方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3398334A (en) * | 1964-11-23 | 1968-08-20 | Itt | Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions |
| JPS5772389A (en) * | 1980-10-24 | 1982-05-06 | Hitachi Ltd | Constant-voltage diode |
| JPS58173249U (ja) * | 1982-05-12 | 1983-11-19 | 日本電気株式会社 | 高圧ダイオ−ド |
| JPS6193258A (ja) * | 1984-10-09 | 1986-05-12 | ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン | 航空機用ガスタ−ビンエンジン及びその運転方法 |
| JPH0756895B2 (ja) * | 1988-03-14 | 1995-06-14 | 株式会社東芝 | メサ型半導体基体 |
| US5245412A (en) * | 1992-02-18 | 1993-09-14 | Square D Company | Low capacitance silicon transient suppressor with monolithic structure |
| JP3315541B2 (ja) * | 1994-11-04 | 2002-08-19 | 新日本無線株式会社 | ＳｉＣへの電極の形成方法 |
| US5880511A (en) * | 1995-06-30 | 1999-03-09 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
| USRE38608E1 (en) | 1995-06-30 | 2004-10-05 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
| JPH0922922A (ja) * | 1995-07-04 | 1997-01-21 | Mitsubishi Materials Corp | ＳｉＣ上のＰｔ電極への配線構造 |
| JP3955396B2 (ja) * | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
| JP2002535840A (ja) * | 1999-01-12 | 2002-10-22 | オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト | メサ形縁端部を備えるパワー半導体素子 |
| FR2815472B1 (fr) * | 2000-10-13 | 2003-03-21 | St Microelectronics Sa | Diac planar |
| US6633063B2 (en) * | 2001-05-04 | 2003-10-14 | Semiconductor Components Industries Llc | Low voltage transient voltage suppressor and method of making |
| US6489660B1 (en) * | 2001-05-22 | 2002-12-03 | General Semiconductor, Inc. | Low-voltage punch-through bi-directional transient-voltage suppression devices |
| JP2002373992A (ja) * | 2001-06-15 | 2002-12-26 | Hitachi Ltd | 双方向定電圧ダイオード又はその製造方法 |
| JP3891092B2 (ja) | 2001-10-23 | 2007-03-07 | ヤマハ株式会社 | ステアリングホイール |
| US6689669B2 (en) | 2001-11-03 | 2004-02-10 | Kulite Semiconductor Products, Inc. | High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane |
| EP1456926B1 (en) | 2001-12-14 | 2013-03-27 | STMicroelectronics Asia Pacific Pte Ltd. | Transient voltage clamping circuit |
| US6867436B1 (en) | 2003-08-05 | 2005-03-15 | Protek Devices, Lp | Transient voltage suppression device |
| US7355300B2 (en) * | 2004-06-15 | 2008-04-08 | Woodward Governor Company | Solid state turbine engine ignition exciter having elevated temperature operational capability |
| US7391057B2 (en) | 2005-05-18 | 2008-06-24 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
| US7586156B2 (en) * | 2006-07-26 | 2009-09-08 | Fairchild Semiconductor Corporation | Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device |
| US7668295B2 (en) | 2007-05-14 | 2010-02-23 | General Electric Co. | System and method for high voltage transient suppression and spit protection in an x-ray tube |
| US20090015978A1 (en) | 2007-07-12 | 2009-01-15 | Clark O Melville | Non-inductive silicon transient voltage suppressor |
| US20090115018A1 (en) | 2007-11-01 | 2009-05-07 | Alpha & Omega Semiconductor, Ltd | Transient voltage suppressor manufactured in silicon on oxide (SOI) layer |
| US8093133B2 (en) | 2008-04-04 | 2012-01-10 | Semiconductor Components Industries, Llc | Transient voltage suppressor and methods |
| JP2009267032A (ja) * | 2008-04-24 | 2009-11-12 | Toyota Motor Corp | 半導体装置とその製造方法 |
| US8445917B2 (en) | 2009-03-20 | 2013-05-21 | Cree, Inc. | Bidirectional silicon carbide transient voltage suppression devices |
| US8288839B2 (en) * | 2009-04-30 | 2012-10-16 | Alpha & Omega Semiconductor, Inc. | Transient voltage suppressor having symmetrical breakdown voltages |
| US8164876B2 (en) | 2009-09-04 | 2012-04-24 | Osram Sylvania Inc. | Transient voltage protection circuit and system incorporating the same |
-
2011
- 2011-10-26 US US13/281,638 patent/US8530902B2/en active Active
-
2012
- 2012-10-10 BR BR102012025930-3A patent/BR102012025930A2/pt not_active IP Right Cessation
- 2012-10-16 JP JP2012228503A patent/JP2013093574A/ja active Pending
- 2012-10-18 CA CA2792591A patent/CA2792591A1/en not_active Abandoned
- 2012-10-25 EP EP12189922.3A patent/EP2587543A3/en not_active Withdrawn
- 2012-10-26 CN CN201210416034.XA patent/CN103077938B/zh active Active
-
2013
- 2013-08-15 US US13/967,886 patent/US8765524B2/en active Active
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