CN103077938B - 用于瞬时电压抑制器的方法和系统 - Google Patents

用于瞬时电压抑制器的方法和系统 Download PDF

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Publication number
CN103077938B
CN103077938B CN201210416034.XA CN201210416034A CN103077938B CN 103077938 B CN103077938 B CN 103077938B CN 201210416034 A CN201210416034 A CN 201210416034A CN 103077938 B CN103077938 B CN 103077938B
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layer
polarity
transient voltage
electric conductivity
tvs
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Chinese (zh)
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CN103077938A (zh
Inventor
A.S.卡什亚普
D.M.谢多克
E.A.安达拉维斯
P.M.桑维克
S.D.阿瑟
V.逖尔卡
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General Electric Co
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General Electric Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Rectifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CN201210416034.XA 2011-10-26 2012-10-26 用于瞬时电压抑制器的方法和系统 Active CN103077938B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/281,638 US8530902B2 (en) 2011-10-26 2011-10-26 System for transient voltage suppressors
US13/281638 2011-10-26

Publications (2)

Publication Number Publication Date
CN103077938A CN103077938A (zh) 2013-05-01
CN103077938B true CN103077938B (zh) 2017-12-08

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Country Status (6)

Country Link
US (2) US8530902B2 (enExample)
EP (1) EP2587543A3 (enExample)
JP (1) JP2013093574A (enExample)
CN (1) CN103077938B (enExample)
BR (1) BR102012025930A2 (enExample)
CA (1) CA2792591A1 (enExample)

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US9042072B2 (en) * 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US8987858B2 (en) * 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9111750B2 (en) * 2013-06-28 2015-08-18 General Electric Company Over-voltage protection of gallium nitride semiconductor devices
US9997507B2 (en) * 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
US9508841B2 (en) 2013-08-01 2016-11-29 General Electric Company Method and system for a semiconductor device with integrated transient voltage suppression
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
CN105321876A (zh) * 2014-07-28 2016-02-10 哈尔滨工大华生电子有限公司 一种集成esd防护功能的高频共模lc滤波设计方法
US9806157B2 (en) * 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
US20160293592A1 (en) * 2015-03-31 2016-10-06 Vishay General Semiconductor Llc Thin bi-directional transient voltage suppressor (tvs) or zener diode
CN109616407A (zh) * 2018-12-12 2019-04-12 中国人民解放军军事科学院国防工程研究院 高功率电磁脉冲防护的SiC-TVS器件的制备方法
US11482851B2 (en) * 2020-10-14 2022-10-25 Eaton Intelligent Power Limited Arc flash mitigation device
CN115632070B (zh) * 2022-10-14 2025-12-05 西安电子科技大学芜湖研究院 一种钳位电压可选的多台阶肖特基接触SiC-TVS器件及制备方法
CN115632071B (zh) * 2022-10-27 2025-12-05 西安电子科技大学芜湖研究院 一种多台阶的钳位电压可选的SiC-TVS器件及制备方法

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JPS58173249U (ja) * 1982-05-12 1983-11-19 日本電気株式会社 高圧ダイオ−ド
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JPH0756895B2 (ja) * 1988-03-14 1995-06-14 株式会社東芝 メサ型半導体基体
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Publication number Publication date
US20130328064A1 (en) 2013-12-12
BR102012025930A2 (pt) 2014-03-18
EP2587543A3 (en) 2014-04-09
US8530902B2 (en) 2013-09-10
US20130105816A1 (en) 2013-05-02
CA2792591A1 (en) 2013-04-26
EP2587543A2 (en) 2013-05-01
JP2013093574A (ja) 2013-05-16
CN103077938A (zh) 2013-05-01
US8765524B2 (en) 2014-07-01

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