CA2792591A1 - Method and system for transient voltage suppressors - Google Patents

Method and system for transient voltage suppressors Download PDF

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Publication number
CA2792591A1
CA2792591A1 CA2792591A CA2792591A CA2792591A1 CA 2792591 A1 CA2792591 A1 CA 2792591A1 CA 2792591 A CA2792591 A CA 2792591A CA 2792591 A CA2792591 A CA 2792591A CA 2792591 A1 CA2792591 A1 CA 2792591A1
Authority
CA
Canada
Prior art keywords
layer
polarity
conductivity
tvs
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2792591A
Other languages
English (en)
French (fr)
Inventor
Avinash Srikrishnan Kashyap
David Mulford Shaddock
Emad Andarawis Andarawis
Peter Micah Sandvik
Stephen Daley Arthur
Vinayak Tilak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of CA2792591A1 publication Critical patent/CA2792591A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Rectifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CA2792591A 2011-10-26 2012-10-18 Method and system for transient voltage suppressors Abandoned CA2792591A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/281,638 US8530902B2 (en) 2011-10-26 2011-10-26 System for transient voltage suppressors
US13/281,638 2011-10-26

Publications (1)

Publication Number Publication Date
CA2792591A1 true CA2792591A1 (en) 2013-04-26

Family

ID=47471463

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2792591A Abandoned CA2792591A1 (en) 2011-10-26 2012-10-18 Method and system for transient voltage suppressors

Country Status (6)

Country Link
US (2) US8530902B2 (enExample)
EP (1) EP2587543A3 (enExample)
JP (1) JP2013093574A (enExample)
CN (1) CN103077938B (enExample)
BR (1) BR102012025930A2 (enExample)
CA (1) CA2792591A1 (enExample)

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US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9042072B2 (en) * 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US8987858B2 (en) * 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9111750B2 (en) * 2013-06-28 2015-08-18 General Electric Company Over-voltage protection of gallium nitride semiconductor devices
US9997507B2 (en) * 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
US9508841B2 (en) 2013-08-01 2016-11-29 General Electric Company Method and system for a semiconductor device with integrated transient voltage suppression
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
CN105321876A (zh) * 2014-07-28 2016-02-10 哈尔滨工大华生电子有限公司 一种集成esd防护功能的高频共模lc滤波设计方法
US9806157B2 (en) * 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
US20160293592A1 (en) * 2015-03-31 2016-10-06 Vishay General Semiconductor Llc Thin bi-directional transient voltage suppressor (tvs) or zener diode
CN109616407A (zh) * 2018-12-12 2019-04-12 中国人民解放军军事科学院国防工程研究院 高功率电磁脉冲防护的SiC-TVS器件的制备方法
US11482851B2 (en) * 2020-10-14 2022-10-25 Eaton Intelligent Power Limited Arc flash mitigation device
CN115632070B (zh) * 2022-10-14 2025-12-05 西安电子科技大学芜湖研究院 一种钳位电压可选的多台阶肖特基接触SiC-TVS器件及制备方法
CN115632071B (zh) * 2022-10-27 2025-12-05 西安电子科技大学芜湖研究院 一种多台阶的钳位电压可选的SiC-TVS器件及制备方法

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US3398334A (en) * 1964-11-23 1968-08-20 Itt Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
JPS5772389A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Constant-voltage diode
JPS58173249U (ja) * 1982-05-12 1983-11-19 日本電気株式会社 高圧ダイオ−ド
JPS6193258A (ja) * 1984-10-09 1986-05-12 ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン 航空機用ガスタ−ビンエンジン及びその運転方法
JPH0756895B2 (ja) * 1988-03-14 1995-06-14 株式会社東芝 メサ型半導体基体
US5245412A (en) * 1992-02-18 1993-09-14 Square D Company Low capacitance silicon transient suppressor with monolithic structure
JP3315541B2 (ja) * 1994-11-04 2002-08-19 新日本無線株式会社 ＳｉＣへの電極の形成方法
USRE38608E1 (en) 1995-06-30 2004-10-05 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
US5880511A (en) * 1995-06-30 1999-03-09 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
JPH0922922A (ja) * 1995-07-04 1997-01-21 Mitsubishi Materials Corp ＳｉＣ上のＰｔ電極への配線構造
JP3955396B2 (ja) * 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
JP2002535840A (ja) * 1999-01-12 2002-10-22 オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト メサ形縁端部を備えるパワー半導体素子
FR2815472B1 (fr) * 2000-10-13 2003-03-21 St Microelectronics Sa Diac planar
US6633063B2 (en) * 2001-05-04 2003-10-14 Semiconductor Components Industries Llc Low voltage transient voltage suppressor and method of making
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Also Published As

Publication number Publication date
US20130328064A1 (en) 2013-12-12
BR102012025930A2 (pt) 2014-03-18
EP2587543A3 (en) 2014-04-09
US8530902B2 (en) 2013-09-10
US20130105816A1 (en) 2013-05-02
EP2587543A2 (en) 2013-05-01
JP2013093574A (ja) 2013-05-16
CN103077938B (zh) 2017-12-08
CN103077938A (zh) 2013-05-01
US8765524B2 (en) 2014-07-01

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Legal Events

Date Code Title Description
EEER Examination request

Effective date: 20170816

FZDE Discontinued

Effective date: 20181018