JP5868457B2 - 半導体アセンブリおよび製造方法 - Google Patents
半導体アセンブリおよび製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 152
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 90
- 229910002601 GaN Inorganic materials 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 36
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 30
- 230000001052 transient effect Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 230000005669 field effect Effects 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 13
- 239000002800 charge carrier Substances 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
110 基板
120 GaN半導体デバイス
121 バッファ層
122 GaN層
123 AlGaN層
124 キャッピング層
125 ゲート端子
126 ソース端子
127 ドレイン端子
130 TVS構造
131 第1の半導体領域
132 第2の半導体領域
133 第3の半導体領域
140 電気的な接触
Claims (14)
- 炭化ケイ素(SiC)を含む基板と、
前記基板上に製作された窒化ガリウム(GaN)半導体デバイスと、
前記基板内に製作された少なくとも1つの過渡電圧サプレッサ(TVS)構造と、
を備え、
前記GaN半導体デバイスが、高電子移動度トランジスタ(HEMT)、接合ゲート型電界効果トランジスタ(JFET)、または金属−酸化膜−半導体電界効果型トランジスタ(MOSFET)であり、
前記TVS構造が、
第1の導電型を有する第1の半導体領域と、
第2の導電型を有し、かつ前記第1の半導体領域と電気的に接触する第2の半導体領域と、
第1の導電型を有し、かつ前記第2の半導体領域と電気的に接触する第3の半導体領域と、
を備え、
前記TVS構造は、前記GaN半導体デバイスの両端に印加される電圧がしきい値電圧よりも大きいときに、パンチスルーモードで動作するように構成される、
モノリシック集積型半導体アセンブリ。 - 前記TVS構造が、炭化ケイ素、窒化ガリウム、ダイアモンド、窒化アルミニウム、窒化ホウ素、またはこれらの組合せのうちの少なくとも1つを含む、請求項1に記載のモノリシック集積型半導体アセンブリ。
- 前記TVS構造が、横方向に構成される、請求項1または2に記載のモノリシック集積型半導体アセンブリ。
- 前記TVS構造が、縦方向に構成される、請求項1または2に記載のモノリシック集積型半導体アセンブリ。
- 前記第1の導電型が、n+型であり、前記第2の導電型がp型である、請求項1から4のいずれかに記載のモノリシック集積型半導体アセンブリ。
- 前記TVS構造が、ゲート−ソース端子、ドレイン−ソース端子、ゲート−ドレイン端子、またはこれらの組合せを介して前記GaN半導体デバイスと電気的に接触する、請求項1から5のいずれかに記載のモノリシック集積型半導体アセンブリ。
- 炭化ケイ素(SiC)を含む基板と、
前記基板上に製作された、高電子移動度トランジスタ(HEMT)からなる窒化ガリウム(GaN)半導体デバイスと、
前記基板内に製作された炭化ケイ素(SiC)を含む少なくとも1つの過渡電圧サプレッサ(TVS)構造と、
を備え、
前記TVS構造が、
第1の導電型を有する第1の半導体領域と、
第2の導電型を有し、かつ前記第1の半導体領域と電気的に接触する第2の半導体領域と、
第1の導電型を有し、かつ前記第2の半導体領域と電気的に接触する第3の半導体領域と、
を備え、
前記TVS構造が、前記GaN半導体デバイスと電気的に接触し、
前記TVS構造は、前記GaN半導体デバイスの両端に印加される電圧がしきい値電圧よりも大きいときに、パンチスルーモードで動作するように構成される、
モノリシック集積型半導体アセンブリ。 - 前記アセンブリが、摂氏150度よりも高い温度で動作するように構成される、請求項7に記載のモノリシック集積型ア半導体センブリ。
- 前記アセンブリが、破壊電圧の90%において1μA/cm2未満のリーク電流を有するように構成される、請求項7または8に記載のモノリシック集積型アセンブリ。
- 前記アセンブリが、150A/cm2よりも大きい動作電流密度を有するように構成される、請求項7から9のいずれかに記載のモノリシック集積型アセンブリ。
- モノリシック集積型半導体アセンブリを作る方法であって、
(a)炭化ケイ素(SiC)を含む基板を用意するステップと、
(b)前記基板上に窒化ガリウム(GaN)半導体デバイスを製作するステップと、
(c)前記基板内に少なくとも1つの過渡電圧サプレッサ(TVS)構造を製作するステップと、
(d)前記TVS構造を前記GaN半導体デバイスと電気的にカップリングさせるステップと、
を含み、
前記GaN半導体デバイスが、高電子移動度トランジスタ(HEMT)、接合ゲート型電界効果トランジスタ(JFET)、または金属−酸化膜−半導体電界効果型トランジスタ(MOSFET)であり、
前記TVS構造が、
第1の導電型を有する第1の半導体領域と、
第2の導電型を有し、かつ前記第1の半導体領域と電気的に接触する第2の半導体領域と、
第1の導電型を有し、かつ前記第2の半導体領域と電気的に接触する第3の半導体領域と、
を備え、
前記TVS構造は、前記GaN半導体デバイスの両端に印加される電圧がしきい値電圧よりも大きいときに、パンチスルーモードで動作するように構成される、
方法。 - 前記第1の導電型が、n+型であり、前記第2の導電型がp型である、請求項11に記載の方法。
- 前記ステップ(c)が、イオン注入によって前記SiC基板内に前記第1の半導体領域、前記第2の半導体領域、および前記第3の半導体領域を形成するサブステップを含む、請求項11または12に記載の方法。
- 前記ステップ(d)が、ゲート−ソース端子、ドレイン−ソース端子、ゲート−ドレイン端子、またはこれらの組合せを介して前記TVS構造を前記GaN半導体デバイスと電気的にカップリングさせるサブステップを含む、請求項11から13のいずれかに記載の方法。
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