FR2815472B1 - Diac planar - Google Patents
Diac planarInfo
- Publication number
- FR2815472B1 FR2815472B1 FR0013180A FR0013180A FR2815472B1 FR 2815472 B1 FR2815472 B1 FR 2815472B1 FR 0013180 A FR0013180 A FR 0013180A FR 0013180 A FR0013180 A FR 0013180A FR 2815472 B1 FR2815472 B1 FR 2815472B1
- Authority
- FR
- France
- Prior art keywords
- diac
- planar
- diac planar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013180A FR2815472B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar |
CNB018172679A CN1220275C (zh) | 2000-10-13 | 2001-10-12 | 平面双端开关 |
EP01976431A EP1328980A1 (fr) | 2000-10-13 | 2001-10-12 | Diac planar |
PCT/FR2001/003179 WO2002031889A1 (fr) | 2000-10-13 | 2001-10-12 | Diac planar |
US10/398,419 US7321138B2 (en) | 2000-10-13 | 2001-10-12 | Planar diac |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013180A FR2815472B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2815472A1 FR2815472A1 (fr) | 2002-04-19 |
FR2815472B1 true FR2815472B1 (fr) | 2003-03-21 |
Family
ID=8855350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0013180A Expired - Fee Related FR2815472B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar |
Country Status (5)
Country | Link |
---|---|
US (1) | US7321138B2 (fr) |
EP (1) | EP1328980A1 (fr) |
CN (1) | CN1220275C (fr) |
FR (1) | FR2815472B1 (fr) |
WO (1) | WO2002031889A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7037814B1 (en) * | 2003-10-10 | 2006-05-02 | National Semiconductor Corporation | Single mask control of doping levels |
US20080315260A1 (en) * | 2005-03-22 | 2008-12-25 | Russell Duane | Diode Structure |
JP2008172165A (ja) * | 2007-01-15 | 2008-07-24 | Toshiba Corp | 半導体装置 |
US8399995B2 (en) * | 2009-01-16 | 2013-03-19 | Infineon Technologies Ag | Semiconductor device including single circuit element for soldering |
US8753156B2 (en) * | 2009-02-12 | 2014-06-17 | Hobie Cat Company | Remote drive |
FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
CN102244079B (zh) * | 2011-07-28 | 2013-08-21 | 江苏捷捷微电子股份有限公司 | 台面工艺功率晶体管芯片结构和实施方法 |
US8530902B2 (en) * | 2011-10-26 | 2013-09-10 | General Electric Company | System for transient voltage suppressors |
CN109599332A (zh) * | 2018-12-27 | 2019-04-09 | 朝阳无线电元件有限责任公司 | 一种低伏电压调整二极管制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615929A (en) * | 1965-07-08 | 1971-10-26 | Texas Instruments Inc | Method of forming epitaxial region of predetermined thickness and article of manufacture |
DE2625710A1 (de) * | 1976-06-09 | 1977-12-15 | Standard Elektrik Lorenz Ag | Diodenmatrix |
US4267527A (en) * | 1979-05-11 | 1981-05-12 | Rca Corporation | Relaxation oscillator |
JPS5691478A (en) * | 1979-12-26 | 1981-07-24 | Hitachi Ltd | Manufacture of punch-through type diode |
JPH07120788B2 (ja) * | 1986-07-16 | 1995-12-20 | 関西日本電気株式会社 | プレ−ナ型半導体装置 |
US4847671A (en) * | 1987-05-19 | 1989-07-11 | General Electric Company | Monolithically integrated insulated gate semiconductor device |
US4967256A (en) * | 1988-07-08 | 1990-10-30 | Texas Instruments Incorporated | Overvoltage protector |
GB9417393D0 (en) * | 1994-08-30 | 1994-10-19 | Texas Instruments Ltd | A four-region (pnpn) semiconductor device |
US5880511A (en) * | 1995-06-30 | 1999-03-09 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
JP3564898B2 (ja) * | 1996-10-25 | 2004-09-15 | 株式会社デンソー | 半導体装置 |
DE69842052D1 (de) * | 1997-10-30 | 2011-01-27 | Sumitomo Electric Industries | Gan einkristall-substrat und herstellungsmethode |
-
2000
- 2000-10-13 FR FR0013180A patent/FR2815472B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-12 EP EP01976431A patent/EP1328980A1/fr not_active Withdrawn
- 2001-10-12 WO PCT/FR2001/003179 patent/WO2002031889A1/fr active Application Filing
- 2001-10-12 CN CNB018172679A patent/CN1220275C/zh not_active Expired - Fee Related
- 2001-10-12 US US10/398,419 patent/US7321138B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7321138B2 (en) | 2008-01-22 |
FR2815472A1 (fr) | 2002-04-19 |
CN1220275C (zh) | 2005-09-21 |
EP1328980A1 (fr) | 2003-07-23 |
US20040012034A1 (en) | 2004-01-22 |
CN1470077A (zh) | 2004-01-21 |
WO2002031889A1 (fr) | 2002-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20070629 |