JP2013093574A - 過渡電圧抑制器のための方法およびシステム - Google Patents

過渡電圧抑制器のための方法およびシステム Download PDF

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Publication number
JP2013093574A
JP2013093574A JP2012228503A JP2012228503A JP2013093574A JP 2013093574 A JP2013093574 A JP 2013093574A JP 2012228503 A JP2012228503 A JP 2012228503A JP 2012228503 A JP2012228503 A JP 2012228503A JP 2013093574 A JP2013093574 A JP 2013093574A
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layer
tvs
polarity
assembly
conductivity
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Pending
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JP2012228503A
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English (en)
Japanese (ja)
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JP2013093574A5 (enExample
Inventor
Srikrishnan Kashyap Avinash
アヴィナッシュ・スリクリッシュナン・カッシャプ
David Mulford Shaddock
デビッド・マルフォード・シャドック
Emad Andarawis Andarawis
エマド・アンダラウィス・アンダラウィス
Micar Sandvik Peter
ピーター・ミカー・サンドヴィック
Stephen D Arthur
スティーブン・デイリー・アーサー
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General Electric Co
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General Electric Co
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Publication of JP2013093574A publication Critical patent/JP2013093574A/ja
Publication of JP2013093574A5 publication Critical patent/JP2013093574A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Rectifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP2012228503A 2011-10-26 2012-10-16 過渡電圧抑制器のための方法およびシステム Pending JP2013093574A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/281,638 US8530902B2 (en) 2011-10-26 2011-10-26 System for transient voltage suppressors
US13/281,638 2011-10-26

Publications (2)

Publication Number Publication Date
JP2013093574A true JP2013093574A (ja) 2013-05-16
JP2013093574A5 JP2013093574A5 (enExample) 2015-11-26

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JP2012228503A Pending JP2013093574A (ja) 2011-10-26 2012-10-16 過渡電圧抑制器のための方法およびシステム

Country Status (6)

Country Link
US (2) US8530902B2 (enExample)
EP (1) EP2587543A3 (enExample)
JP (1) JP2013093574A (enExample)
CN (1) CN103077938B (enExample)
BR (1) BR102012025930A2 (enExample)
CA (1) CA2792591A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150002520A (ko) * 2013-06-28 2015-01-07 제네럴 일렉트릭 컴퍼니 반도체 조립체 및 그 제조 방법
JP2015026836A (ja) * 2013-07-25 2015-02-05 ゼネラル・エレクトリック・カンパニイ 半導体アセンブリおよび製造方法
JP2023545965A (ja) * 2020-10-14 2023-11-01 イートン インテリジェント パワー リミテッド アークフラッシュ軽減デバイス

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US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9042072B2 (en) * 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US8987858B2 (en) * 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9508841B2 (en) 2013-08-01 2016-11-29 General Electric Company Method and system for a semiconductor device with integrated transient voltage suppression
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
CN105321876A (zh) * 2014-07-28 2016-02-10 哈尔滨工大华生电子有限公司 一种集成esd防护功能的高频共模lc滤波设计方法
US9806157B2 (en) * 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
US20160293592A1 (en) * 2015-03-31 2016-10-06 Vishay General Semiconductor Llc Thin bi-directional transient voltage suppressor (tvs) or zener diode
CN109616407A (zh) * 2018-12-12 2019-04-12 中国人民解放军军事科学院国防工程研究院 高功率电磁脉冲防护的SiC-TVS器件的制备方法
CN115632070B (zh) * 2022-10-14 2025-12-05 西安电子科技大学芜湖研究院 一种钳位电压可选的多台阶肖特基接触SiC-TVS器件及制备方法
CN115632071B (zh) * 2022-10-27 2025-12-05 西安电子科技大学芜湖研究院 一种多台阶的钳位电压可选的SiC-TVS器件及制备方法

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JPS5772389A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Constant-voltage diode
JPS58173249U (ja) * 1982-05-12 1983-11-19 日本電気株式会社 高圧ダイオ−ド
JPS6193258A (ja) * 1984-10-09 1986-05-12 ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン 航空機用ガスタ−ビンエンジン及びその運転方法
JPH01232762A (ja) * 1988-03-14 1989-09-18 Toshiba Corp メサ型半導体基体
JPH08139051A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法
JPH0922922A (ja) * 1995-07-04 1997-01-21 Mitsubishi Materials Corp ＳｉＣ上のＰｔ電極への配線構造
JPH11509041A (ja) * 1995-06-30 1999-08-03 セムテック・コーポレイション デュアルベース構造を使用する低電圧パンチスルー過渡サプレッサー
JP2000091596A (ja) * 1998-09-17 2000-03-31 Hitachi Ltd 半導体サージ吸収素子並びにそれを用いた電気・電子機器及びパワーモジュール
JP2002535840A (ja) * 1999-01-12 2002-10-22 オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト メサ形縁端部を備えるパワー半導体素子
JP2002373992A (ja) * 2001-06-15 2002-12-26 Hitachi Ltd 双方向定電圧ダイオード又はその製造方法
JP2006002771A (ja) * 2004-06-15 2006-01-05 Woodward Governor Co 高温動作能力を有する固体タービンエンジン点火励起装置

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US3398334A (en) * 1964-11-23 1968-08-20 Itt Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
US5245412A (en) * 1992-02-18 1993-09-14 Square D Company Low capacitance silicon transient suppressor with monolithic structure
USRE38608E1 (en) 1995-06-30 2004-10-05 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
FR2815472B1 (fr) * 2000-10-13 2003-03-21 St Microelectronics Sa Diac planar
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US6489660B1 (en) * 2001-05-22 2002-12-03 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices
JP3891092B2 (ja) 2001-10-23 2007-03-07 ヤマハ株式会社 ステアリングホイール
US6689669B2 (en) 2001-11-03 2004-02-10 Kulite Semiconductor Products, Inc. High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane
EP1456926B1 (en) 2001-12-14 2013-03-27 STMicroelectronics Asia Pacific Pte Ltd. Transient voltage clamping circuit
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US7391057B2 (en) 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7586156B2 (en) * 2006-07-26 2009-09-08 Fairchild Semiconductor Corporation Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device
US7668295B2 (en) 2007-05-14 2010-02-23 General Electric Co. System and method for high voltage transient suppression and spit protection in an x-ray tube
US20090015978A1 (en) 2007-07-12 2009-01-15 Clark O Melville Non-inductive silicon transient voltage suppressor
US20090115018A1 (en) 2007-11-01 2009-05-07 Alpha & Omega Semiconductor, Ltd Transient voltage suppressor manufactured in silicon on oxide (SOI) layer
US8093133B2 (en) 2008-04-04 2012-01-10 Semiconductor Components Industries, Llc Transient voltage suppressor and methods
JP2009267032A (ja) * 2008-04-24 2009-11-12 Toyota Motor Corp 半導体装置とその製造方法
US8445917B2 (en) 2009-03-20 2013-05-21 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices
US8288839B2 (en) * 2009-04-30 2012-10-16 Alpha & Omega Semiconductor, Inc. Transient voltage suppressor having symmetrical breakdown voltages
US8164876B2 (en) 2009-09-04 2012-04-24 Osram Sylvania Inc. Transient voltage protection circuit and system incorporating the same

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JPS5772389A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Constant-voltage diode
JPS58173249U (ja) * 1982-05-12 1983-11-19 日本電気株式会社 高圧ダイオ−ド
JPS6193258A (ja) * 1984-10-09 1986-05-12 ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン 航空機用ガスタ−ビンエンジン及びその運転方法
JPH01232762A (ja) * 1988-03-14 1989-09-18 Toshiba Corp メサ型半導体基体
JPH08139051A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法
JPH11509041A (ja) * 1995-06-30 1999-08-03 セムテック・コーポレイション デュアルベース構造を使用する低電圧パンチスルー過渡サプレッサー
JPH0922922A (ja) * 1995-07-04 1997-01-21 Mitsubishi Materials Corp ＳｉＣ上のＰｔ電極への配線構造
JP2000091596A (ja) * 1998-09-17 2000-03-31 Hitachi Ltd 半導体サージ吸収素子並びにそれを用いた電気・電子機器及びパワーモジュール
JP2002535840A (ja) * 1999-01-12 2002-10-22 オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト メサ形縁端部を備えるパワー半導体素子
JP2002373992A (ja) * 2001-06-15 2002-12-26 Hitachi Ltd 双方向定電圧ダイオード又はその製造方法
JP2006002771A (ja) * 2004-06-15 2006-01-05 Woodward Governor Co 高温動作能力を有する固体タービンエンジン点火励起装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150002520A (ko) * 2013-06-28 2015-01-07 제네럴 일렉트릭 컴퍼니 반도체 조립체 및 그 제조 방법
JP2015012297A (ja) * 2013-06-28 2015-01-19 ゼネラル・エレクトリック・カンパニイ 半導体アセンブリおよび製造方法
KR101654975B1 (ko) * 2013-06-28 2016-09-06 제네럴 일렉트릭 컴퍼니 반도체 조립체 및 그 제조 방법
JP2015026836A (ja) * 2013-07-25 2015-02-05 ゼネラル・エレクトリック・カンパニイ 半導体アセンブリおよび製造方法
US9997507B2 (en) 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
JP2023545965A (ja) * 2020-10-14 2023-11-01 イートン インテリジェント パワー リミテッド アークフラッシュ軽減デバイス
JP7699653B2 (ja) 2020-10-14 2025-06-27 イートン インテリジェント パワー リミテッド アークフラッシュ軽減デバイス

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Publication number Publication date
US20130328064A1 (en) 2013-12-12
BR102012025930A2 (pt) 2014-03-18
EP2587543A3 (en) 2014-04-09
US8530902B2 (en) 2013-09-10
US20130105816A1 (en) 2013-05-02
CA2792591A1 (en) 2013-04-26
EP2587543A2 (en) 2013-05-01
CN103077938B (zh) 2017-12-08
CN103077938A (zh) 2013-05-01
US8765524B2 (en) 2014-07-01

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