JP6302166B2 - 分散型過渡電圧抑制を用いる避雷のための方法およびシステム - Google Patents
分散型過渡電圧抑制を用いる避雷のための方法およびシステム Download PDFInfo
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
- H01B7/28—Protection against damage caused by moisture, corrosion, chemical attack or weather
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Emergency Protection Circuit Devices (AREA)
Description
102 TVSデバイス
104 PN接合
106 基板
108 層
110 層
112 層
114 電気的コンタクト
115 コンタクト表面
116 層
118 層
120 電気的コンタクト
122 サブレイヤ
124 サブレイヤ
200 TVSアセンブリ
202 構成部品
204 電気部品
206 電気部品
208 電気コンジット
210 TVSデバイス
212 端子
214 端子
216 グランド接続部
300 TVSアセンブリ
302 ケーブル
304 コネクタ
306 コネクタ
400 TVSアセンブリ
402 ワイアリングハーネス
404 ワイア
406 ケーブル
408 コネクタ
410 コネクタ
412 コネクタ
414 コネクタ
416 電気コンジット
418 シース
420 TVSデバイス
422 TVSデバイス
424 TVSデバイス
500 TVSアセンブリ
502 構成部品
504 コネクタピン
506 コネクタ挿入部
508 コネクタフリーシェル
510 カップリングナット
514 絶縁されていない部分
516 ワイア
518 ケーブル
520 バックシェル
522 ケーブルクランプアセンブリ
600 TVSシステム
602 制御システム
604 接続部
606 TVSアセンブリ
608 バックシェル
610 コネクタソケット
612 ケーブル
614 領域
616 構成部品
618 ケーブルまたはケーブルハーネス
620 接続端部
622 構成部品
Claims (10)
- 複数の分散型電気部品(602、616、622)であって、前記複数の分散型電気部品のうちの少なくとも一部が前記複数の分散型電気部品のうちの他のものから離れて配置され、前記複数の分散型電気部品のうちの少なくとも一部が前記複数の分散型電気部品の他のものに複数の電気コンジット(208)を備えるそれぞれの接続部品を介して電気的に結合される、複数の分散型電気部品と、
ワイドバンドギャップ半導体材料を含み、その端子が前記電気コンジットおよび前記分散型電気部品のうちの少なくとも一方に電気的に結合された複数の過渡電圧抑制(TVS)デバイス(606)を備えた分散型保護システム(600)であって、前記TVSデバイスが、前記接続部品内で、前記電気コンジットおよび前記分散型電気部品のうちの前記少なくとも一方に近接して配置されて、前記電気コンジットおよびTVSデバイスを介して各分散型電気部品に複数の電気的消散経路を提供する、分散型保護システムと、
を備え、
前記TVSデバイスがパンチスルー状態のときに、大量の電流が前記TVSデバイスを通って流れることが可能であり、
前記TVSデバイスが、可能性のある過渡電圧源の点の近接した場所に分散された、電気システム。 - 前記電気システムが、航空機機体電気システム、航空機エンジン電気システム、無人輸送手段電気システム、風力タービン電気システム、発電電気システム、ならびに配電および送電電気システムのうちの少なくとも1つを備える、請求項1に記載のシステム。
- 前記分散型電気部品が、コネクタ(610)、エンジン制御システム、フルオーソリティディジタルエンジン制御(FADEC)、遠隔インタロゲーションユニット(RIU)、スマートセンサ、アクチュエータ、および端部電気ノードのうちの少なくとも1つを備える、請求項1または2に記載のシステム。
- 前記複数のTVSデバイスのうちの少なくとも1つが、低温ガスの流れ、高速ガスの流れのうちの少なくとも一方の内部に、および近接して、ならびに前記少なくとも1つよりも大きな熱質量を有する物体と接触しながら、のうちの少なくとも1つで配置される、請求項1乃至3のいずれかに記載のシステム。
- 前記電気システムが、航空機電気システムであり、
前記複数のTVSデバイスのうちの少なくとも一部は、前記電気的保護の冗長性が前記複数の分散型電気部品に与えられるように前記航空機電気システムの内部で電気的に結合され、前記複数の電気的消散経路が、物理的に分散される、請求項1乃至4のいずれかに記載のシステム。 - 前記複数の過渡電圧抑制(TVS)デバイス(606)の第2の端子が、グランド接続部に電気的に結合される、請求項1乃至5のいずれかに記載のシステム。
- 前記電気コンジットが、ケーブル(302)を備え、前記ケーブルが、
前記複数の電気部品の第1の電気部品(204)と噛み合うように構成された第1の電気的コネクタ(304)と、
前記複数の電気部品の第2の電気部品(206)と噛み合うように構成された第2の電気的コネクタ(306)と、
前記第1の電気的コネクタと前記第2の電気的コネクタとの間に延伸する前記ケーブルの1つまたは複数の電気ワイア(208)であって、前記1つまたは複数の電気ワイアが前記1つまたは複数の電気ワイアの長さに沿ってシース(308)によって少なくとも部分的に囲まれ、前記過渡電圧抑制装置デバイス(210)が前記シースの内部に配置される、1つまたは複数の電気ワイアと、
を含む、請求項1乃至6のいずれかに記載のシステム。 - 前記電気コンジットが、第1のケーブル端部、第2のケーブル端部、およびこれらの間に延伸する1つまたは複数の電気ワイアを含むケーブルを備え、前記1つまたは複数の電気コンジットが前記1つまたは複数の電気ワイアの長さに沿ってシースによって少なくとも部分的に囲まれ、前記TVSデバイスが前記シースの内部に配置される、請求項1乃至7のいずれかに記載のシステム。
- 前記電気コンジットが、複数のワイア(404)および複数のケーブル(406)のうちの少なくとも一方を含むワイアリングハーネス(402)を備え、前記複数のワイアおよび複数のケーブルの各々が第1の終端部および第2の終端部を備え、前記複数のワイアおよび複数のケーブルがそれぞれの長さに沿って一緒に束ねられ、前記TVSデバイス(424)が前記複数のワイアおよび複数のケーブルのうちの1つまたは複数の長さに沿って配置される、請求項1乃至8のいずれかに記載のシステム。
- 前記電気コンジットが、電気的コネクタを備え、前記電気的コネクタが、
プラグコンタクト(504)およびソケットコンタクト(504)のうちの少なくとも一方を受けるように構成されたグロメット(506)と、
前記グロメットを少なくとも部分的に囲むシェル(520)と、
前記シェルの内部に配置され、前記プラグコンタクトおよび前記ソケットコンタクトのうちの少なくとも一方に電気的に結合されたTVSデバイス(210)と、
を含む、請求項1乃至9のいずれかに記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/436,060 US9042072B2 (en) | 2012-03-30 | 2012-03-30 | Method and system for lightning protection with distributed transient voltage suppression |
US13/436,060 | 2012-03-30 |
Publications (3)
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JP2013215090A JP2013215090A (ja) | 2013-10-17 |
JP2013215090A5 JP2013215090A5 (ja) | 2016-05-19 |
JP6302166B2 true JP6302166B2 (ja) | 2018-03-28 |
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Country Status (6)
Country | Link |
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US (1) | US9042072B2 (ja) |
EP (1) | EP2645377B1 (ja) |
JP (1) | JP6302166B2 (ja) |
CN (1) | CN103368159A (ja) |
BR (1) | BR102013007061A2 (ja) |
CA (1) | CA2810063C (ja) |
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US9112343B1 (en) * | 2012-09-04 | 2015-08-18 | The Boeing Company | Power feeder shielding for electromagnetic protection |
US9520705B2 (en) * | 2012-09-04 | 2016-12-13 | The Boeing Company | Lightning protection for spaced electrical bundles |
US9383405B2 (en) * | 2013-04-10 | 2016-07-05 | Hamilton Sundstrand Corporation | Transient voltage suppression protection circuit including built in testing |
US9111750B2 (en) * | 2013-06-28 | 2015-08-18 | General Electric Company | Over-voltage protection of gallium nitride semiconductor devices |
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US10103540B2 (en) * | 2014-04-24 | 2018-10-16 | General Electric Company | Method and system for transient voltage suppression devices with active control |
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-
2012
- 2012-03-30 US US13/436,060 patent/US9042072B2/en active Active
-
2013
- 2013-03-21 CA CA2810063A patent/CA2810063C/en not_active Expired - Fee Related
- 2013-03-25 EP EP13160926.5A patent/EP2645377B1/en active Active
- 2013-03-26 BR BRBR102013007061-0A patent/BR102013007061A2/pt not_active Application Discontinuation
- 2013-03-28 CN CN2013101036345A patent/CN103368159A/zh active Pending
- 2013-03-29 JP JP2013070796A patent/JP6302166B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN103368159A (zh) | 2013-10-23 |
EP2645377B1 (en) | 2019-05-22 |
CA2810063C (en) | 2020-05-19 |
EP2645377A2 (en) | 2013-10-02 |
BR102013007061A2 (pt) | 2015-07-07 |
US9042072B2 (en) | 2015-05-26 |
CA2810063A1 (en) | 2013-09-30 |
EP2645377A3 (en) | 2017-01-04 |
US20130258541A1 (en) | 2013-10-03 |
JP2013215090A (ja) | 2013-10-17 |
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