GB1447763A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1447763A
GB1447763A GB5065572A GB5065572A GB1447763A GB 1447763 A GB1447763 A GB 1447763A GB 5065572 A GB5065572 A GB 5065572A GB 5065572 A GB5065572 A GB 5065572A GB 1447763 A GB1447763 A GB 1447763A
Authority
GB
United Kingdom
Prior art keywords
nov
gold
semi
region
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5065572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB5065572A priority Critical patent/GB1447763A/en
Publication of GB1447763A publication Critical patent/GB1447763A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1447763 Semi-conductor devices WESTING- HOUSE BRAKE & SIGNAL CO Ltd 1 Nov 1973 [2 Nov 1972] 50655/72 Heading H1K A semi-conductor device includes a region modified to retain mobile carriers and subsequently release them for removal by an electric field. The device comprises a silicon wafer doped with gallium to form two PN junctions 17, 18, and with gold which forms trapping centres in the central N region. The device behaves as a symmetrical voltage clipping device. The device may alternatively be a P+NN+ device in which the gold is diffused at above 870‹ C. for one hour.
GB5065572A 1972-11-02 1972-11-02 Semiconductor device Expired GB1447763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5065572A GB1447763A (en) 1972-11-02 1972-11-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5065572A GB1447763A (en) 1972-11-02 1972-11-02 Semiconductor device

Publications (1)

Publication Number Publication Date
GB1447763A true GB1447763A (en) 1976-09-02

Family

ID=10456825

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5065572A Expired GB1447763A (en) 1972-11-02 1972-11-02 Semiconductor device

Country Status (1)

Country Link
GB (1) GB1447763A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0088179A2 (en) * 1982-03-09 1983-09-14 Semitron Industries Limited Transient absorption semiconductor device
US4551744A (en) * 1981-07-31 1985-11-05 Hitachi, Ltd. High switching speed semiconductor device containing graded killer impurity
EP0456825A1 (en) * 1989-11-24 1991-11-21 ZOTOV, Vladislav Dmitrievich Semiconductive structures, methods for controlling their conductivity and sensitive elements based on those semiconductive structures
EP0537843A1 (en) * 1991-10-16 1993-04-21 Philips Electronics Uk Limited A two terminal semiconductor device
US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9042072B2 (en) 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551744A (en) * 1981-07-31 1985-11-05 Hitachi, Ltd. High switching speed semiconductor device containing graded killer impurity
EP0088179A2 (en) * 1982-03-09 1983-09-14 Semitron Industries Limited Transient absorption semiconductor device
GB2116774A (en) * 1982-03-09 1983-09-28 Semitron Cricklade Ltd Transient absorption semiconductor device for voltage surge protection
EP0088179A3 (en) * 1982-03-09 1984-08-22 Semitron Cricklade Ltd. Transient absorption semiconductor device
EP0456825A1 (en) * 1989-11-24 1991-11-21 ZOTOV, Vladislav Dmitrievich Semiconductive structures, methods for controlling their conductivity and sensitive elements based on those semiconductive structures
EP0456825A4 (en) * 1989-11-24 1994-08-03 Institut Problem Upravlenia Akademii Nauk Sssr
EP0537843A1 (en) * 1991-10-16 1993-04-21 Philips Electronics Uk Limited A two terminal semiconductor device
US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9130365B2 (en) 2012-03-14 2015-09-08 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9042072B2 (en) 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9379189B2 (en) 2013-03-18 2016-06-28 General Electric Company Method and system for transient voltage suppression

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Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee