TW200605406A - Semiconductor light-emitting device and its manufacturing method - Google Patents
Semiconductor light-emitting device and its manufacturing methodInfo
- Publication number
- TW200605406A TW200605406A TW094114742A TW94114742A TW200605406A TW 200605406 A TW200605406 A TW 200605406A TW 094114742 A TW094114742 A TW 094114742A TW 94114742 A TW94114742 A TW 94114742A TW 200605406 A TW200605406 A TW 200605406A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- side electrode
- emitting device
- light
- semiconductor light
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The subject of the present invention is to provide a semiconductor light-emitting device comprising an n-side electrode with a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer, and to provide a nitride semiconductor light-emitting device wherein an ohmic contact with a nitride semiconductor layer can be obtained through a simple manufacturing process, and on the surface of which is formed an n-side electrode having an Au layer facilitating wire bonding, and a manufacturing method thereof. On the surface of a sapphire (Al2O3 single crystal) substrate (1), for example, semiconductor layers (2 to 8) constituting a light-emitting layer are arranged in layers and a p-side electrode (10) is formed on the surface thereof via a light-transmitting conductive layer (9). An n-side electrode (11) is formed on an n-type layer (4), which is exposed by removing a part of the semiconductor layers (4 to 8) through the use of etching. A side of the n-side electrode in contact with the n-type layer is composed of an Al layer (11a). The n-side electrode of an actual LED further comprises one Au layer (11c), which is formed on the surface of the Al layer via a barrier metal layer (11b).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004140995 | 2004-05-11 | ||
| JP2005130570A JP2005354040A (en) | 2004-05-11 | 2005-04-27 | Semiconductor light-emitting device and method for fabricating same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200605406A true TW200605406A (en) | 2006-02-01 |
Family
ID=35320485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094114742A TW200605406A (en) | 2004-05-11 | 2005-05-06 | Semiconductor light-emitting device and its manufacturing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2005354040A (en) |
| TW (1) | TW200605406A (en) |
| WO (1) | WO2005109530A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070029555A1 (en) * | 2005-08-04 | 2007-02-08 | Lester Steven D | Edge-emitting LED light source |
| JP5354622B2 (en) * | 2009-02-18 | 2013-11-27 | 独立行政法人産業技術総合研究所 | Semiconductor light emitting diode |
| JP2014239082A (en) * | 2011-09-28 | 2014-12-18 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of the same |
| JP5732140B2 (en) | 2011-09-30 | 2015-06-10 | 創光科学株式会社 | Nitride semiconductor device and manufacturing method thereof |
| KR20140001332A (en) * | 2012-06-26 | 2014-01-07 | 엘지이노텍 주식회사 | Light emitting device |
| JP2014165337A (en) | 2013-02-25 | 2014-09-08 | Rohm Co Ltd | Light-emitting element, light-emitting element package, and method of manufacturing light-emitting element |
| JP6323782B2 (en) * | 2013-08-26 | 2018-05-16 | パナソニックＩｐマネジメント株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08274372A (en) * | 1995-03-31 | 1996-10-18 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light emitting element |
| JP3354358B2 (en) * | 1995-08-10 | 2002-12-09 | 三洋電機株式会社 | Semiconductor laser device and submount substrate thereof |
-
2005
- 2005-04-27 JP JP2005130570A patent/JP2005354040A/en active Pending
- 2005-05-06 TW TW094114742A patent/TW200605406A/en unknown
- 2005-05-10 WO PCT/JP2005/008510 patent/WO2005109530A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005354040A (en) | 2005-12-22 |
| WO2005109530A1 (en) | 2005-11-17 |
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