JP2013093482A - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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JP2013093482A
JP2013093482A JP2011235617A JP2011235617A JP2013093482A JP 2013093482 A JP2013093482 A JP 2013093482A JP 2011235617 A JP2011235617 A JP 2011235617A JP 2011235617 A JP2011235617 A JP 2011235617A JP 2013093482 A JP2013093482 A JP 2013093482A
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insulating layer
drift region
region
field plate
semiconductor device
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JP2011235617A
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Japanese (ja)
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JP2013093482A5 (enExample
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Yutaka Takeda
裕 竹田
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Renesas Electronics Corp
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Renesas Electronics Corp
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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2011235617A 2011-10-27 2011-10-27 半導体装置および半導体装置の製造方法 Pending JP2013093482A (ja)

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JP2013093482A true JP2013093482A (ja) 2013-05-16
JP2013093482A5 JP2013093482A5 (enExample) 2014-09-18

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9461122B2 (en) 2014-03-19 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method for the same
US9722067B2 (en) 2015-09-10 2017-08-01 Kabushiki Kaisha Toshiba Semiconductor device
US10026804B2 (en) 2014-03-19 2018-07-17 Kabushiki Kaisha Toshiba Semiconductor device
US10332997B2 (en) 2017-11-10 2019-06-25 Hitachi, Ltd. Semiconductor device and method of manufacturing semiconductor device
CN113316837A (zh) * 2019-01-21 2021-08-27 株式会社电装 半导体装置的制造方法
KR20220100492A (ko) * 2021-01-08 2022-07-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 메모리 윈도우를 확대하기 위한 분극 강화 구조물

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS61180483A (ja) * 1985-02-05 1986-08-13 Matsushita Electric Ind Co Ltd 高耐圧ｍｏｓ型半導体装置
JPH07211917A (ja) * 1994-01-19 1995-08-11 Nippon Telegr & Teleph Corp <Ntt> 横形ｍｏｓ電界効果トランジスタ
JPH11224945A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp 半導体装置
JPH11261066A (ja) * 1997-12-17 1999-09-24 Korea Electronics Telecommun 二重フィールド板構造を有する電力素子
JP2002353444A (ja) * 2001-05-28 2002-12-06 Fuji Electric Co Ltd 半導体装置
JP2004502306A (ja) * 2000-06-23 2004-01-22 シリコン・ワイヤレス・コーポレイション 速度飽和モードでの動作時に線形伝達特性を持つｍｏｓｆｅｔデバイスとその製造方法及び動作方法
JP2004335990A (ja) * 2003-03-10 2004-11-25 Fuji Electric Device Technology Co Ltd Ｍｉｓ型半導体装置
US20040238854A1 (en) * 2003-03-11 2004-12-02 Infineon Technologies Ag Field effect transistor
JP2006344957A (ja) * 2005-06-08 2006-12-21 Samsung Electronics Co Ltd 厚いエッジゲート絶縁膜パターンを有するｍｏｓ電界効果トランジスタ及びその製造方法
JP2008135700A (ja) * 2006-11-01 2008-06-12 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物膜の製造方法及びｉｉｉ族窒化物半導体素子
JP2008277640A (ja) * 2007-05-02 2008-11-13 Toshiba Corp 窒化物半導体素子
JP2008311392A (ja) * 2007-06-14 2008-12-25 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ
JP2009515332A (ja) * 2005-11-02 2009-04-09 エヌエックスピー ビー ヴィ 半導体デバイスの製造方法
US20090267145A1 (en) * 2008-04-23 2009-10-29 Ciclon Semiconductor Device Corp. Mosfet device having dual interlevel dielectric thickness and method of making same
US20110079846A1 (en) * 2009-10-02 2011-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage devices, systems, and methods for forming the high voltage devices
JP2011124282A (ja) * 2009-12-08 2011-06-23 Sharp Corp 電界効果トランジスタ
JP2011198837A (ja) * 2010-03-17 2011-10-06 Renesas Electronics Corp 半導体装置およびその製造方法

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS61180483A (ja) * 1985-02-05 1986-08-13 Matsushita Electric Ind Co Ltd 高耐圧ｍｏｓ型半導体装置
JPH07211917A (ja) * 1994-01-19 1995-08-11 Nippon Telegr & Teleph Corp <Ntt> 横形ｍｏｓ電界効果トランジスタ
JPH11261066A (ja) * 1997-12-17 1999-09-24 Korea Electronics Telecommun 二重フィールド板構造を有する電力素子
JPH11224945A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp 半導体装置
JP2004502306A (ja) * 2000-06-23 2004-01-22 シリコン・ワイヤレス・コーポレイション 速度飽和モードでの動作時に線形伝達特性を持つｍｏｓｆｅｔデバイスとその製造方法及び動作方法
JP2002353444A (ja) * 2001-05-28 2002-12-06 Fuji Electric Co Ltd 半導体装置
JP2004335990A (ja) * 2003-03-10 2004-11-25 Fuji Electric Device Technology Co Ltd Ｍｉｓ型半導体装置
US20040238854A1 (en) * 2003-03-11 2004-12-02 Infineon Technologies Ag Field effect transistor
JP2006344957A (ja) * 2005-06-08 2006-12-21 Samsung Electronics Co Ltd 厚いエッジゲート絶縁膜パターンを有するｍｏｓ電界効果トランジスタ及びその製造方法
JP2009515332A (ja) * 2005-11-02 2009-04-09 エヌエックスピー ビー ヴィ 半導体デバイスの製造方法
JP2008135700A (ja) * 2006-11-01 2008-06-12 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物膜の製造方法及びｉｉｉ族窒化物半導体素子
JP2008277640A (ja) * 2007-05-02 2008-11-13 Toshiba Corp 窒化物半導体素子
JP2008311392A (ja) * 2007-06-14 2008-12-25 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ
US20090267145A1 (en) * 2008-04-23 2009-10-29 Ciclon Semiconductor Device Corp. Mosfet device having dual interlevel dielectric thickness and method of making same
US20110079846A1 (en) * 2009-10-02 2011-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage devices, systems, and methods for forming the high voltage devices
JP2011124282A (ja) * 2009-12-08 2011-06-23 Sharp Corp 電界効果トランジスタ
JP2011198837A (ja) * 2010-03-17 2011-10-06 Renesas Electronics Corp 半導体装置およびその製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9461122B2 (en) 2014-03-19 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method for the same
US10026804B2 (en) 2014-03-19 2018-07-17 Kabushiki Kaisha Toshiba Semiconductor device
US10714566B2 (en) 2014-03-19 2020-07-14 Kabushiki Kaisha Toshiba Semiconductor device
US9722067B2 (en) 2015-09-10 2017-08-01 Kabushiki Kaisha Toshiba Semiconductor device
US10332997B2 (en) 2017-11-10 2019-06-25 Hitachi, Ltd. Semiconductor device and method of manufacturing semiconductor device
CN113316837A (zh) * 2019-01-21 2021-08-27 株式会社电装 半导体装置的制造方法
CN113316837B (zh) * 2019-01-21 2023-12-05 株式会社电装 半导体装置的制造方法
KR20220100492A (ko) * 2021-01-08 2022-07-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 메모리 윈도우를 확대하기 위한 분극 강화 구조물
US11705516B2 (en) 2021-01-08 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Polarization enhancement structure for enlarging memory window
KR102640580B1 (ko) * 2021-01-08 2024-02-23 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 메모리 윈도우를 확대하기 위한 분극 강화 구조물
US12176433B2 (en) 2021-01-08 2024-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Polarization enhancement structure for enlarging memory window

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