JP2013093477A5 - - Google Patents
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- JP2013093477A5 JP2013093477A5 JP2011235436A JP2011235436A JP2013093477A5 JP 2013093477 A5 JP2013093477 A5 JP 2013093477A5 JP 2011235436 A JP2011235436 A JP 2011235436A JP 2011235436 A JP2011235436 A JP 2011235436A JP 2013093477 A5 JP2013093477 A5 JP 2013093477A5
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- Japan
- Prior art keywords
- bus line
- gate bus
- gate
- layer
- semiconductor device
- Prior art date
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011235436A JP5979530B2 (ja) | 2011-10-26 | 2011-10-26 | 半導体装置の製造方法 |
| US13/661,471 US9196492B2 (en) | 2011-10-26 | 2012-10-26 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011235436A JP5979530B2 (ja) | 2011-10-26 | 2011-10-26 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013093477A JP2013093477A (ja) | 2013-05-16 |
| JP2013093477A5 true JP2013093477A5 (enExample) | 2014-12-11 |
| JP5979530B2 JP5979530B2 (ja) | 2016-08-24 |
Family
ID=48172836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011235436A Active JP5979530B2 (ja) | 2011-10-26 | 2011-10-26 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9196492B2 (enExample) |
| JP (1) | JP5979530B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140239349A1 (en) * | 2013-02-25 | 2014-08-28 | International Rectifier Corporation | Drain Pad Having a Reduced Termination Electric Field |
| CN104409431B (zh) * | 2014-10-24 | 2017-07-04 | 苏州能讯高能半导体有限公司 | 一种半导体器件 |
| JP6067151B2 (ja) * | 2014-12-16 | 2017-01-25 | 三菱電機株式会社 | マルチフィンガトランジスタ及び半導体装置 |
| US12464760B2 (en) | 2016-03-17 | 2025-11-04 | Macom Technology Solutions Holdings, Inc. | Bypassed gate transistors having improved stability |
| US10128365B2 (en) | 2016-03-17 | 2018-11-13 | Cree, Inc. | Bypassed gate transistors having improved stability |
| DE102016205079B4 (de) * | 2016-03-29 | 2021-07-01 | Robert Bosch Gmbh | High-electron-mobility Transistor |
| CN108417626B (zh) * | 2017-02-10 | 2021-07-30 | 台达电子工业股份有限公司 | 半导体装置 |
| JP7155482B2 (ja) * | 2018-09-13 | 2022-10-19 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
| EP4481813A1 (en) * | 2023-06-21 | 2024-12-25 | NXP USA, Inc. | Structures for suppressing odd-mode instabilities |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2504503B2 (ja) * | 1988-01-12 | 1996-06-05 | 富士通株式会社 | 半導体素子 |
| JPH05275373A (ja) * | 1992-03-25 | 1993-10-22 | Sanyo Electric Co Ltd | 化合物半導体装置の製造方法 |
| JPH07161659A (ja) * | 1993-12-07 | 1995-06-23 | Nec Corp | 半導体装置およびその製造方法 |
| JPH08316744A (ja) | 1995-05-17 | 1996-11-29 | Oki Electric Ind Co Ltd | 電力増幅回路 |
| US5925901A (en) * | 1997-03-21 | 1999-07-20 | Nec Corporation | Field effect transistor with plated heat sink on a fet chip |
| US6023086A (en) * | 1997-09-02 | 2000-02-08 | Motorola, Inc. | Semiconductor transistor with stabilizing gate electrode |
| JP3515886B2 (ja) | 1997-09-29 | 2004-04-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP3169124B2 (ja) * | 1998-06-29 | 2001-05-21 | 日本電気株式会社 | 電界効果トランジスタおよびその製造方法 |
| US6774449B1 (en) * | 1999-09-16 | 2004-08-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
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2011
- 2011-10-26 JP JP2011235436A patent/JP5979530B2/ja active Active
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2012
- 2012-10-26 US US13/661,471 patent/US9196492B2/en active Active