JP5979530B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5979530B2
JP5979530B2 JP2011235436A JP2011235436A JP5979530B2 JP 5979530 B2 JP5979530 B2 JP 5979530B2 JP 2011235436 A JP2011235436 A JP 2011235436A JP 2011235436 A JP2011235436 A JP 2011235436A JP 5979530 B2 JP5979530 B2 JP 5979530B2
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layer
bus line
gate
gate bus
semiconductor device
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Japanese (ja)
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JP2013093477A5 (enExample
JP2013093477A (ja
Inventor
清 梶井
清 梶井
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2011235436A priority Critical patent/JP5979530B2/ja
Priority to US13/661,471 priority patent/US9196492B2/en
Publication of JP2013093477A publication Critical patent/JP2013093477A/ja
Publication of JP2013093477A5 publication Critical patent/JP2013093477A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • General Engineering & Computer Science (AREA)
JP2011235436A 2011-10-26 2011-10-26 半導体装置の製造方法 Active JP5979530B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011235436A JP5979530B2 (ja) 2011-10-26 2011-10-26 半導体装置の製造方法
US13/661,471 US9196492B2 (en) 2011-10-26 2012-10-26 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011235436A JP5979530B2 (ja) 2011-10-26 2011-10-26 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013093477A JP2013093477A (ja) 2013-05-16
JP2013093477A5 JP2013093477A5 (enExample) 2014-12-11
JP5979530B2 true JP5979530B2 (ja) 2016-08-24

Family

ID=48172836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011235436A Active JP5979530B2 (ja) 2011-10-26 2011-10-26 半導体装置の製造方法

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US (1) US9196492B2 (enExample)
JP (1) JP5979530B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239349A1 (en) * 2013-02-25 2014-08-28 International Rectifier Corporation Drain Pad Having a Reduced Termination Electric Field
CN104409431B (zh) * 2014-10-24 2017-07-04 苏州能讯高能半导体有限公司 一种半导体器件
JP6067151B2 (ja) * 2014-12-16 2017-01-25 三菱電機株式会社 マルチフィンガトランジスタ及び半導体装置
US12464760B2 (en) 2016-03-17 2025-11-04 Macom Technology Solutions Holdings, Inc. Bypassed gate transistors having improved stability
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
DE102016205079B4 (de) * 2016-03-29 2021-07-01 Robert Bosch Gmbh High-electron-mobility Transistor
CN108417626B (zh) * 2017-02-10 2021-07-30 台达电子工业股份有限公司 半导体装置
JP7155482B2 (ja) * 2018-09-13 2022-10-19 住友電工デバイス・イノベーション株式会社 半導体装置
EP4481813A1 (en) * 2023-06-21 2024-12-25 NXP USA, Inc. Structures for suppressing odd-mode instabilities

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2504503B2 (ja) * 1988-01-12 1996-06-05 富士通株式会社 半導体素子
JPH05275373A (ja) * 1992-03-25 1993-10-22 Sanyo Electric Co Ltd 化合物半導体装置の製造方法
JPH07161659A (ja) * 1993-12-07 1995-06-23 Nec Corp 半導体装置およびその製造方法
JPH08316744A (ja) 1995-05-17 1996-11-29 Oki Electric Ind Co Ltd 電力増幅回路
US5925901A (en) * 1997-03-21 1999-07-20 Nec Corporation Field effect transistor with plated heat sink on a fet chip
US6023086A (en) * 1997-09-02 2000-02-08 Motorola, Inc. Semiconductor transistor with stabilizing gate electrode
JP3515886B2 (ja) 1997-09-29 2004-04-05 三菱電機株式会社 半導体装置およびその製造方法
JP3169124B2 (ja) * 1998-06-29 2001-05-21 日本電気株式会社 電界効果トランジスタおよびその製造方法
US6774449B1 (en) * 1999-09-16 2004-08-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same

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Publication number Publication date
US9196492B2 (en) 2015-11-24
JP2013093477A (ja) 2013-05-16
US20130109168A1 (en) 2013-05-02

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