JP2013067541A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 98
- 239000010432 diamond Substances 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 15
- 239000011574 phosphorus Substances 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】実施の形態の半導体装置は、(100)面から<011>±10度方向に10度以上40度以下の範囲で傾斜する面を備えるダイヤモンド基板と、上記面上に形成され、リン(P)を含有するn型ダイヤモンド半導体層と、を備える。実施の形態の半導体装置の製造方法は、(100)面から<011>±10度方向に10度以上40度以下の範囲で傾斜する面を備えるダイヤモンド基板を準備し、上記面上に、エピタキシャル成長により、リン(P)を含有するn型ダイヤモンド半導体層を形成する。
【選択図】図1
Description
12 p+型ダイヤモンド半導体層
14 p型ダイヤモンド半導体層
16 n型ダイヤモンド半導体層
18 ショットキー電極
20 オーミック電極
100 pnダイオード
Claims (5)
- (100)面から<011>±10度方向に10度以上40度以下の範囲で傾斜する面を備えるダイヤモンド基板と、
前記面上に形成され、リン(P)を含有するn型ダイヤモンド半導体層と、
を備えること特徴とする半導体装置。 - 前記n型ダイヤモンド半導体層のリン(P)濃度が、1×1015cm−3以上であることを特徴とする請求項1記載の半導体装置。
- 前記ダイヤモンド基板と、前記n型ダイヤモンド基板との間に、さらに、p型ダイヤモンド半導体層を有することを特徴とする請求項1または請求項2記載の半導体装置。
- (100)面から<011>±10度方向に10度以上40度以下の範囲で傾斜する面を備えるダイヤモンド基板を準備し、
前記面上に、エピタキシャル成長により、リン(P)を含有するn型ダイヤモンド半導体層を形成することを特徴とする半導体装置の製造方法。 - 前記n型ダイヤモンド半導体層のリン(P)濃度が、1×1015cm−3以上であることを特徴とする請求項4記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011208851A JP5537525B2 (ja) | 2011-09-26 | 2011-09-26 | 半導体装置および半導体装置の製造方法 |
US13/555,430 US8878190B2 (en) | 2011-09-26 | 2012-07-23 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011208851A JP5537525B2 (ja) | 2011-09-26 | 2011-09-26 | 半導体装置および半導体装置の製造方法 |
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Publication Number | Publication Date |
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JP2013067541A true JP2013067541A (ja) | 2013-04-18 |
JP5537525B2 JP5537525B2 (ja) | 2014-07-02 |
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JP2011208851A Active JP5537525B2 (ja) | 2011-09-26 | 2011-09-26 | 半導体装置および半導体装置の製造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019196007A (ja) * | 2018-05-10 | 2019-11-14 | ロッキード マーティン コーポレイションLockheed Martin Corporation | ダイヤモンド半導体の直接付加合成 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6104575B2 (ja) | 2012-11-28 | 2017-03-29 | 株式会社東芝 | 半導体装置 |
US9922791B2 (en) | 2016-05-05 | 2018-03-20 | Arizona Board Of Regents On Behalf Of Arizona State University | Phosphorus doped diamond electrode with tunable low work function for emitter and collector applications |
US10121657B2 (en) | 2016-05-10 | 2018-11-06 | Arizona Board Of Regents On Behalf Of Arizona State University | Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation |
US10704160B2 (en) | 2016-05-10 | 2020-07-07 | Arizona Board Of Regents On Behalf Of Arizona State University | Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures |
US10418475B2 (en) | 2016-11-28 | 2019-09-17 | Arizona Board Of Regents On Behalf Of Arizona State University | Diamond based current aperture vertical transistor and methods of making and using the same |
US10497817B1 (en) * | 2018-07-09 | 2019-12-03 | Wisconsin Alumni Research Foundation | P-n diodes and p-n-p heterojunction bipolar transistors with diamond collectors and current tunneling layers |
CN113130697B (zh) * | 2019-12-31 | 2024-01-23 | 西安电子科技大学 | 一种赝竖式氢氧终端金刚石核探测器及其制备方法 |
CN112382670B (zh) * | 2020-10-10 | 2022-05-24 | 西安电子科技大学 | 一种基于高纯本征单晶金刚石的雪崩二极管及制备方法 |
CN112967923B (zh) * | 2021-02-05 | 2022-06-10 | 中国电子科技集团公司第十三研究所 | 大尺寸晶圆上制备金刚石衬底太赫兹二极管的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003007717A1 (fr) * | 2001-07-11 | 2003-01-30 | Sumitomo Chemical Company, Limited | Procede relatif a la lutte contre les insectes nuisibles dans l'agriculture |
JP2006240983A (ja) * | 2005-02-03 | 2006-09-14 | National Institute Of Advanced Industrial & Technology | リン原子がドープされたn型(100)面方位ダイヤモンド半導体単結晶膜及びその製造方法 |
JP2007019057A (ja) * | 2005-07-05 | 2007-01-25 | Showa Denko Kk | 発光ダイオード |
JP2007109909A (ja) * | 2005-10-14 | 2007-04-26 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
JP2007194538A (ja) * | 2006-01-23 | 2007-08-02 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3079653B2 (ja) | 1991-07-16 | 2000-08-21 | 住友電気工業株式会社 | ダイヤモンド及び閃亜鉛鉱型化合物の合成方法 |
TW200414309A (en) * | 2002-06-18 | 2004-08-01 | Sumitomo Electric Industries | N-type semiconductor diamond producing method and semiconductor diamond |
CN101218687B (zh) * | 2005-07-05 | 2012-07-04 | 昭和电工株式会社 | 发光二极管及其制造方法 |
-
2011
- 2011-09-26 JP JP2011208851A patent/JP5537525B2/ja active Active
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2012
- 2012-07-23 US US13/555,430 patent/US8878190B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003007717A1 (fr) * | 2001-07-11 | 2003-01-30 | Sumitomo Chemical Company, Limited | Procede relatif a la lutte contre les insectes nuisibles dans l'agriculture |
JP2006240983A (ja) * | 2005-02-03 | 2006-09-14 | National Institute Of Advanced Industrial & Technology | リン原子がドープされたn型(100)面方位ダイヤモンド半導体単結晶膜及びその製造方法 |
JP2007019057A (ja) * | 2005-07-05 | 2007-01-25 | Showa Denko Kk | 発光ダイオード |
JP2007109909A (ja) * | 2005-10-14 | 2007-04-26 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
JP2007194538A (ja) * | 2006-01-23 | 2007-08-02 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
JPN6013064478; Osamu Maida, et al.: 'Characterization of substrate off-angle effects for high-quality homoepitaxial CVD diamond films' Diamond and Related Materials vol.17, 20080111, pp.435-439, ELSEVIER * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019196007A (ja) * | 2018-05-10 | 2019-11-14 | ロッキード マーティン コーポレイションLockheed Martin Corporation | ダイヤモンド半導体の直接付加合成 |
JP7130594B2 (ja) | 2018-05-10 | 2022-09-05 | ロッキード マーティン コーポレイション | ダイヤモンド半導体の直接付加合成 |
JP2022172207A (ja) * | 2018-05-10 | 2022-11-15 | ロッキード マーティン コーポレイション | ダイヤモンド半導体の直接付加合成 |
US11557475B2 (en) | 2018-05-10 | 2023-01-17 | Lockheed Martin Corporation | Direct additive synthesis of diamond semiconductor |
JP7408744B2 (ja) | 2018-05-10 | 2024-01-05 | ロッキード マーティン コーポレーション | ダイヤモンド半導体の直接付加合成 |
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Publication number | Publication date |
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JP5537525B2 (ja) | 2014-07-02 |
US8878190B2 (en) | 2014-11-04 |
US20130075757A1 (en) | 2013-03-28 |
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